Method of manufacturing III-V group compound semiconductor
    1.
    发明授权
    Method of manufacturing III-V group compound semiconductor 失效
    制备III-V族化合物半导体的方法

    公开(公告)号:US5300185A

    公开(公告)日:1994-04-05

    申请号:US858690

    申请日:1992-03-27

    IPC分类号: C23C16/30 C30B25/02

    摘要: Disclosed is a method of efficiently manufacturing a III-V group compound semiconductor that carbon mixing is reduced, wherein a compound represented by the formula (1) or (2) is used as a V group source: ##STR1## wherein X represents a V group element, n represents integer of 1 to 3, and Y represents electron-releasing group bonded to a position selected from 2-, 4-, and 6-positions, ##STR2## wherein X represents a V group element, m represents an integer of 1 or 2, and Y represents electron-releasing group bonded to a position selected from 2- and 4-positions.

    摘要翻译: 公开了一种有效地制造碳组合化合物的III-V族化合物半导体的方法,其中使用由式(1)或(2)表示的化合物作为V族源:1式(1)(* CHEMICAL 结构*)(1)其中X表示V族元素,n表示1〜3的整数,Y表示与选自2-,4-和6-位的1种式(2)所示的释放电子基团 )(*化学结构*)(2)其中X表示V族元素,m表示1或2的整数,Y表示键合在选自2-和4-位的位置的释放电子基团。

    Method for producing compound semiconductors and apparatus therefor
    2.
    发明授权
    Method for producing compound semiconductors and apparatus therefor 失效
    生产化合物半导体的方法及其设备

    公开(公告)号:US5229319A

    公开(公告)日:1993-07-20

    申请号:US618928

    申请日:1990-11-28

    摘要: Disclosed is a method of selective chemical vapor deposition for selectively forming thin films of a semiconductor, dielectric or metal on a semiconductor by providing a mask of SiO.sub.2 having a plurality of openings in various forms on the substrate, wherein a trimethyl gallium (TMG) gas as a Group III material, 10% hydrogen-based arsine (AsH.sub.3) gas as a Group V material, and 500 ppm hydrogen-based disilane (Si.sub.2 H.sub.6) gas as an n-type impurity material are alternately supplied onto the substrate, and each supply amount of the material gases is controlled at a value to obtain a film growth rate for forming the corresponding monoatomic layer or monomolecular layer to each material at each opening. Also disclosed is an apparatus for performing the above-disclosed method of chemical vapor deposition, wherein four reaction chambers are included, and the material gases are supplied to the respective reaction chambers in accordance with the following gas supply sequences: Chamber 1: TMG+H.sub.2 /H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement); Chamber 2: H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement)/TMG+H.sub.2 ; Chamber 3: AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement)/TMG+H.sub.2 /H.sub.2 (for gas replacement); Chamber 4: H.sub.2 (for gas replacement)/TMG+H.sub.2 /H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2.

    摘要翻译: 公开了一种选择性化学气相沉积的方法,通过在衬底上提供具有各种形式的多个开口的SiO 2掩模,在半导体上选择性地形成半导体,电介质或金属的薄膜,其中三甲基镓(TMG)气体 作为III族材料,作为第V族材料的10%氢基胂(AsH 3)气体和作为n型杂质材料的500ppm氢基乙硅烷(Si 2 H 6)气体交替供给到基板上, 将材料气体的量控制在一个值以获得用于在每个开口处形成每个材料的相应单原子层或单分子层的膜生长速率。 还公开了一种用于执行上述化学气相沉积方法的装置,其中包括四个反应室,并且根据以下气体供应顺序将材料气体供应到各个反应室:腔室1:TMG + H2 / H2(用于更换气体)/ AsH3 + H2 / H2(用于更换气体); 室2:H2(用于气体置换)/ AsH3 + H2 / H2(用于气体置换)/ TMG + H2; 室3:AsH3 + H2 / H2(用于气体置换)/ TMG + H2 / H2(用于气体替换); 室4:H2(用于更换气体)/ TMG + H2 / H2(用于气体置换)/ AsH3 + H2。

    Vapor-phase epitaxial growth method for semiconductor crystal layers
    3.
    发明授权
    Vapor-phase epitaxial growth method for semiconductor crystal layers 失效
    半导体晶体层的气相外延生长方法

    公开(公告)号:US5213654A

    公开(公告)日:1993-05-25

    申请号:US701865

    申请日:1991-05-17

    IPC分类号: C30B25/10 C30B25/14

    摘要: A vapor-phase epitaxial growth method for group III-V compound semiconductor crystal layers by which alternating layers of (InAs)1 and (GaAs)1 are grown on an InP substrate by means of vapor-phase epitaxy while different material gases are supplied alternately. The substrate is irradiated with excimer laser light when a specific layer of the crystal layers is grown, thereby controlling the thickness of the specific crystal layer on a monoatomic scale.

    摘要翻译: 对于III-V族化合物半导体晶体层的气相外延生长方法,通过交替层(InAs)1和(GaAs)1在InP衬底上通过气相外延生长,同时交替地供给不同的材料气体 。 当生长特定层的晶体层时,用准分子激光照射衬底,从而以单原子尺度控制特定晶体层的厚度。

    Deployable reflector
    4.
    发明授权
    Deployable reflector 失效
    可部署的反射器

    公开(公告)号:US07216995B2

    公开(公告)日:2007-05-15

    申请号:US10541524

    申请日:2004-09-09

    IPC分类号: G02B5/08 H01Q15/20

    摘要: A deployable reflector of the invention includes connection members that bridge plural extendable structures constituting a deployable truss structure and connect portions corresponding to nodes of a buckling mode occurring in the extendable structures when a surface cable system is given tension, with portions corresponding to antinodes thereof. The surface cable system includes an internal surface cable system and a circumferential surface cable system connected to the outer circumference thereof. A cable used for the internal surface cable system is high in stiffness and small in ratio of length variation to tension variation. A cable used for the circumferential surface cable system is lower in stiffness and smaller in ratio of the tension variation to the length variation than that used for the internal surface cable system. Given tension by the deployable truss structure via the circumferential surface cable system, the internal surface cable system forms predetermined surface shape.

    摘要翻译: 本发明的可部署的反射器包括连接构件,其连接构成可展开的桁架结构的多个可延伸结构,并且当表面电缆系统被施加张力时,连接对应于在可延伸结构中发生的屈曲模式的节点的部分,其中对应于其波腹的部分。 表面电缆系统包括内表面电缆系统和连接到其外圆周的圆周表面电缆系统。 用于内表面电缆系统的电缆的刚度高,长度变化与张力变化的比例小。 用于圆周表面电缆系统的电缆的刚度较低,并且张力变化与长度变化的比值比内表面电缆系统使用的电缆的频率更小。 通过可展开的桁架结构经由周面电缆系统给予张力,内表面电缆系统形成预定的表面形状。

    MOBILE COMMUNICATION TERMINAL
    5.
    发明申请
    MOBILE COMMUNICATION TERMINAL 审中-公开
    移动通信终端

    公开(公告)号:US20080014967A1

    公开(公告)日:2008-01-17

    申请号:US11775084

    申请日:2007-07-09

    IPC分类号: H04Q7/20

    CPC分类号: G08B21/24 H04W8/22

    摘要: A mobile communication terminal, which can be found promptly when lost, misplaced or stolen, is provided. A mobile communication terminal comprises a short-range wireless communication portion which transmits a request for transmission of ID information to a key terminal on regular basis and receives ID information which is transmitted from the key terminal in response to the request for transmission, a terminal function restriction portion which restricts the function of the mobile communication terminal when the ID information is no longer received by the short-range wireless communication portion, a GPS positioning portion which acquires the location information of the mobile communication terminal by using a GPS system when the ID information is no longer received by the short-range wireless communication portion, and a data communication portion which transmits the location information of the mobile communication terminal, which is acquired by the GPS positioning portion, to a location registration apparatus when the ID information is no longer received by the short-range wireless communication portion.

    摘要翻译: 提供移动通信终端,其可以在丢失,错放或被盗时及时找到。 移动通信终端包括:定期向密钥终端发送ID信息发送请求的短程无线通信部,响应于发送请求,接收从密钥终端发送的ID信息,终端功能 限制部分,当所述短距离无线通信部分不再接收到所述ID信息时,限制所述移动通信终端的功能; GPS定位部分,当所述ID定位部分的ID 信息不再被短距离无线通信部分接收,以及数据通信部分,当ID信息为no时,将由GPS定位部分获取的移动通信终端的位置信息发送到位置登记装置 较短时间内接收到的短距离无线网络 通风部分。

    Mobile communication terminal
    6.
    发明申请
    Mobile communication terminal 审中-公开
    移动通信终端

    公开(公告)号:US20050250446A1

    公开(公告)日:2005-11-10

    申请号:US11109707

    申请日:2005-04-20

    CPC分类号: G08B21/24 H04W8/22

    摘要: A mobile communication terminal, which can be found promptly when lost, misplaced or stolen, is provided. A mobile communication terminal comprises a short-range wireless communication portion which transmits a request for transmission of ID information to a key terminal on regular basis and receives ID information which is transmitted from the key terminal in response to the request for transmission, a terminal function restriction portion which restricts the function of the mobile communication terminal when the ID information is no longer received by the short-range wireless communication portion, a GPS positioning portion which acquires the location information of the mobile communication terminal by using a GPS system when the ID information is no longer received by the short-range wireless communication portion, and a data communication portion which transmits the location information of the mobile communication terminal, which is acquired by the GPS positioning portion, to a location registration apparatus when the ID information is no longer received by the short-range wireless communication portion.

    摘要翻译: 提供移动通信终端,其可以在丢失,错放或被盗时及时找到。 移动通信终端包括:定期向密钥终端发送ID信息发送请求的短程无线通信部,响应于发送请求,接收从密钥终端发送的ID信息,终端功能 限制部分,当所述短距离无线通信部分不再接收到所述ID信息时,限制所述移动通信终端的功能; GPS定位部分,当所述ID定位部分的ID 信息不再被短距离无线通信部分接收,以及数据通信部分,当ID信息为no时,将由GPS定位部分获取的移动通信终端的位置信息发送到位置登记装置 较短时间内接收到的短距离无线网络 通风部分。

    Expansion-type reflection mirror
    9.
    发明申请
    Expansion-type reflection mirror 失效
    膨胀型反射镜

    公开(公告)号:US20060181788A1

    公开(公告)日:2006-08-17

    申请号:US10541524

    申请日:2004-09-09

    IPC分类号: G02B5/08

    摘要: A deployable reflector of the invention includes connection members that bridge plural extendable structures constituting a deployable truss structure and connect portions corresponding to nodes of a buckling mode occurring in the extendable structures when a surface cable system is given tension, with portions corresponding to antinodes thereof. The surface cable system includes an internal surface cable system and a circumferential surface cable system connected to the outer circumference thereof. A cable used for the internal surface cable system is high in stiffness and small in ratio of length variation to tension variation. A cable used for the circumferential surface cable system is lower in stiffness and smaller in ratio of the tension variation to the length variation than that used for the internal surface cable system. Given tension by the deployable truss structure via the circumferential surface cable system, the internal surface cable system forms predetermined surface shape.

    摘要翻译: 本发明的可部署的反射器包括连接构件,其连接构成可展开的桁架结构的多个可延伸结构,并且当表面电缆系统被施加张力时,连接对应于在可延伸结构中发生的屈曲模式的节点的部分,其中对应于其波腹的部分。 表面电缆系统包括内表面电缆系统和连接到其外圆周的圆周表面电缆系统。 用于内表面电缆系统的电缆的刚度高,长度变化与张力变化的比例小。 用于圆周表面电缆系统的电缆的刚度较低,并且张力变化与长度变化的比值比内表面电缆系统使用的电缆的频率更小。 通过可展开的桁架结构经由周面电缆系统给予张力,内表面电缆系统形成预定的表面形状。