公开(公告)号：US5300185A

公开(公告)日：1994-04-05

申请号：US858690

申请日：1992-03-27

申请人： Hisao Hori ,  Yoshito Kawakyu ,  Hironori Ishikawa ,  Masao Mashita

发明人： Hisao Hori ,  Yoshito Kawakyu ,  Hironori Ishikawa ,  Masao Mashita

IPC分类号： C23C16/30 ,  C30B25/02

CPC分类号： C30B25/02 ,  C23C16/301 ,  C30B29/40

摘要： Disclosed is a method of efficiently manufacturing a III-V group compound semiconductor that carbon mixing is reduced, wherein a compound represented by the formula (1) or (2) is used as a V group source: ##STR1## wherein X represents a V group element, n represents integer of 1 to 3, and Y represents electron-releasing group bonded to a position selected from 2-, 4-, and 6-positions, ##STR2## wherein X represents a V group element, m represents an integer of 1 or 2, and Y represents electron-releasing group bonded to a position selected from 2- and 4-positions.

摘要翻译： 公开了一种有效地制造碳组合化合物的III-V族化合物半导体的方法，其中使用由式（1）或（2）表示的化合物作为V族源：1式（1）（* CHEMICAL 结构*）（1）其中X表示V族元素，n表示1〜3的整数，Y表示与选自2-，4-和6-位的1种式（2）所示的释放电子基团 ）（*化学结构*）（2）其中X表示V族元素，m表示1或2的整数，Y表示键合在选自2-和4-位的位置的释放电子基团。

公开(公告)号：US5213654A

公开(公告)日：1993-05-25

申请号：US701865

申请日：1991-05-17

申请人： Masahiro Sasaki ,  Yoshito Kawakyu ,  Hironori Ishikawa ,  Masao Mashita

发明人： Masahiro Sasaki ,  Yoshito Kawakyu ,  Hironori Ishikawa ,  Masao Mashita

IPC分类号： C30B25/10 ,  C30B25/14

CPC分类号： C30B29/40 ,  C30B25/105 ,  C30B25/14

摘要： A vapor-phase epitaxial growth method for group III-V compound semiconductor crystal layers by which alternating layers of (InAs)1 and (GaAs)1 are grown on an InP substrate by means of vapor-phase epitaxy while different material gases are supplied alternately. The substrate is irradiated with excimer laser light when a specific layer of the crystal layers is grown, thereby controlling the thickness of the specific crystal layer on a monoatomic scale.

摘要翻译： 对于III-V族化合物半导体晶体层的气相外延生长方法，通过交替层（InAs）1和（GaAs）1在InP衬底上通过气相外延生长，同时交替地供给不同的材料气体 。 当生长特定层的晶体层时，用准分子激光照射衬底，从而以单原子尺度控制特定晶体层的厚度。

公开(公告)号：US5229319A

公开(公告)日：1993-07-20

申请号：US618928

申请日：1990-11-28

申请人： Yoshito Kawakyu ,  Hironori Ishikawa ,  Masahiro Sasaki ,  Masao Mashita

发明人： Yoshito Kawakyu ,  Hironori Ishikawa ,  Masahiro Sasaki ,  Masao Mashita

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  H01L21/20 ,  H01L21/32

CPC分类号： C23C16/45525 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/32 ,  Y10S148/056 ,  Y10S148/065 ,  Y10S438/935

摘要： Disclosed is a method of selective chemical vapor deposition for selectively forming thin films of a semiconductor, dielectric or metal on a semiconductor by providing a mask of SiO.sub.2 having a plurality of openings in various forms on the substrate, wherein a trimethyl gallium (TMG) gas as a Group III material, 10% hydrogen-based arsine (AsH.sub.3) gas as a Group V material, and 500 ppm hydrogen-based disilane (Si.sub.2 H.sub.6) gas as an n-type impurity material are alternately supplied onto the substrate, and each supply amount of the material gases is controlled at a value to obtain a film growth rate for forming the corresponding monoatomic layer or monomolecular layer to each material at each opening. Also disclosed is an apparatus for performing the above-disclosed method of chemical vapor deposition, wherein four reaction chambers are included, and the material gases are supplied to the respective reaction chambers in accordance with the following gas supply sequences: Chamber 1: TMG+H.sub.2 /H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement); Chamber 2: H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement)/TMG+H.sub.2 ; Chamber 3: AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement)/TMG+H.sub.2 /H.sub.2 (for gas replacement); Chamber 4: H.sub.2 (for gas replacement)/TMG+H.sub.2 /H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2.

摘要翻译： 公开了一种选择性化学气相沉积的方法，通过在衬底上提供具有各种形式的多个开口的SiO 2掩模，在半导体上选择性地形成半导体，电介质或金属的薄膜，其中三甲基镓（TMG）气体 作为III族材料，作为第V族材料的10％氢基胂（AsH 3）气体和作为n型杂质材料的500ppm氢基乙硅烷（Si 2 H 6）气体交替供给到基板上， 将材料气体的量控制在一个值以获得用于在每个开口处形成每个材料的相应单原子层或单分子层的膜生长速率。 还公开了一种用于执行上述化学气相沉积方法的装置，其中包括四个反应室，并且根据以下气体供应顺序将材料气体供应到各个反应室：腔室1：TMG + H2 / H2（用于更换气体）/ AsH3 + H2 / H2（用于更换气体）; 室2：H2（用于气体置换）/ AsH3 + H2 / H2（用于气体置换）/ TMG + H2; 室3：AsH3 + H2 / H2（用于气体置换）/ TMG + H2 / H2（用于气体替换）; 室4：H2（用于更换气体）/ TMG + H2 / H2（用于气体置换）/ AsH3 + H2。

公开(公告)号：US5895938A

公开(公告)日：1999-04-20

申请号：US798102

申请日：1997-02-12

申请人： Miyoko Watanabe ,  Koichi Mizushima ,  Satoshi Itoh ,  Masao Mashita

发明人： Miyoko Watanabe ,  Koichi Mizushima ,  Satoshi Itoh ,  Masao Mashita

IPC分类号： H01L29/73 ,  C23C16/36 ,  H01L21/331 ,  H01L21/338 ,  H01L29/12 ,  H01L29/26 ,  H01L29/737 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/04 ,  H01L31/068 ,  H01L31/07 ,  H01L31/108 ,  H01L33/06 ,  H01L33/10 ,  H01L33/26 ,  H01L33/40 ,  H01L33/62 ,  H01S5/00 ,  H01S5/32 ,  H01L31/0312

CPC分类号： H01L33/26 ,  C23C16/36 ,  H01L29/26 ,  H01L31/022425 ,  H01L31/032 ,  H01L31/068 ,  H01L31/07 ,  H01L31/108 ,  H01S5/32 ,  Y02E10/547

摘要： Disclosed is a semiconductor device comprising a semiconductor BCN compound layer and a metallic BCN compound layer and/or an insulating BCN compound layer, wherein the semiconductor BCN compound layer and the metallic BCN compound layer and/or insulating BCN compound layer are stacked one upon the other.

摘要翻译： 公开了一种半导体器件，其包括半导体BCN化合物层和金属BCN化合物层和/或绝缘BCN化合物层，其中将半导体BCN化合物层和金属BCN化合物层和/或绝缘BCN化合物层堆叠在 其他。

公开(公告)号：US5425811A

公开(公告)日：1995-06-20

申请号：US969358

申请日：1992-10-30

申请人： Masao Mashita

发明人： Masao Mashita

IPC分类号： H01L21/203 ,  C23C14/22 ,  C30B23/02 ,  H01L21/31 ,  H01L21/318 ,  H01L21/365 ,  H01L33/28 ,  H01L33/30 ,  C23C16/50

CPC分类号： C23C14/22 ,  C30B23/02 ,  C30B29/48

摘要： An apparatus for forming a II-VI Group compound thin film containing nitrogen as an impurity, on a substrate, comprises a container for holding a substrate, a vapor source for supplying Zn vapor on a surface of the substrate, a vapor source for supplying Se vapor on the surface of the substrate, and a discharge tube into which a nitrogen gas is introduced, having three-divided internal portions, a high-pressure portion, a middle-pressure portion, and a low-pressure portion from the gas introduction side, and supplying excitation species derived from discharge plasma generated in the low-pressure portion onto the surface of the substrate. Zn vapor and Se vapor are alternately supplied, and supply of nitrogen excitation species is performed in synchronous with supply of Zn vapor.

摘要翻译： 一种用于在基板上形成含氮杂质的II-VI族化合物薄膜的装置，包括用于保持基板的容器，用于在基板的表面上供给Zn蒸气的蒸气源，供给Se的蒸气源 在基板表面上形成蒸气，以及从导入气体导入侧的高压部，中压部和低压部分分别导入有氮气的放电管，具有三分分隔的内部 并且将从低压部分中产生的放电等离子体产生的激发物质提供到衬底的表面上。 交替地供给Zn蒸气和Se蒸气，与Zn蒸气的供给同时进行氮气的供给。

公开(公告)号：US4433340A

公开(公告)日：1984-02-21

申请号：US360665

申请日：1982-03-22

申请人： Masao Mashita ,  Nobuaki Yasuda ,  Tomoyuki Ishibshi, deceased ,  Satoshi Ishibashi, legal representative

发明人： Masao Mashita ,  Nobuaki Yasuda ,  Tomoyuki Ishibshi, deceased ,  Satoshi Ishibashi, legal representative

IPC分类号： G11C17/00 ,  B41M5/26 ,  G11B7/24 ,  G11B7/243 ,  G01D15/34

CPC分类号： G11B7/258 ,  G11B7/00451 ,  G11B7/2403 ,  G11B7/24053 ,  G11B7/243 ,  G11B2007/24316 ,  G11B2007/24328 ,  G11B2007/25706 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/2542 ,  G11B7/2578 ,  Y10S430/146 ,  Y10S430/165

摘要： Disclosed is an optical recording medium. This optical recording medium has a substrate made of a transparent material such as an acrylic resin; and a recording layer for receiving an energy beam such as a laser beam whose intensity is changed in response to quantized information and for receiving desired information by melt-deforming in response to the intensity of the energy beam. The recording layer contains tellurium as a base material and carbon at a predetermined content of 40 atomic percent.

摘要翻译： 公开了一种光记录介质。 该光记录介质具有由诸如丙烯酸树脂之类的透明材料制成的基片; 以及用于接收诸如激光束的能量束的记录层，所述能量束的强度响应于量化信息而改变，并且通过响应于能量束的强度而通过熔融变形来接收期望的信息。 记录层含有碲作为基础材料，碳含有40原子百分比的预定含量。

公开(公告)号：US06333516B1

公开(公告)日：2001-12-25

申请号：US08764275

申请日：1996-12-12

申请人： Riichi Katoh ,  Tetsufumi Tanamoto ,  Francis Minoru Saba ,  Yujiro Naruse ,  Shigeki Takahashi ,  Masao Mashita

发明人： Riichi Katoh ,  Tetsufumi Tanamoto ,  Francis Minoru Saba ,  Yujiro Naruse ,  Shigeki Takahashi ,  Masao Mashita

IPC分类号： H01L2906

CPC分类号： B82Y10/00 ,  H01L29/127 ,  H01L29/7613

摘要： An inverter comprising four quantum dot cells. When the quantum dot cells are arranged in 9 o'clock direction, 12 o'clock direction and 3 o'clock direction, the quantum dot cell is arranged in 6 o'clock direction.

摘要翻译： 一种包括四个量子点单元的逆变器。 当量子点单元被布置在9点钟方向，12点方向和3点钟方向时，量子点单元被布置在6点方向。

公开(公告)号：US4065734A

公开(公告)日：1977-12-27

申请号：US705177

申请日：1976-07-14

申请人： Shouzo Takeno ,  Masao Mashita ,  Toshihiro Onodera

发明人： Shouzo Takeno ,  Masao Mashita ,  Toshihiro Onodera

IPC分类号： H03H9/00 ,  H03H9/02 ,  H03H9/145 ,  H03H9/04 ,  H01L41/18 ,  H03H9/26 ,  H03H9/30

CPC分类号： H03H9/02834 ,  H03H9/02574

摘要： The elastic surface wave device comprises a piezoelectric substrate having a dielectric constant of .epsilon..sub.2, a dielectric film having a dielectric constant of .epsilon..sub.1 and a thickness of h, and deposited on the piezoelectric substrate, and an inter-digital type input-ouput transducer formed on the dielectric film. The ratio of the dielectric constants .epsilon..sub.1 /.epsilon..sub.2, and a function 2.pi./.lambda..multidot.h proportioned to the thickness of the dielectric film are selected to satisfy a condition established in a frustum shaped region bounded by coordinate points P (.epsilon..sub.1 /.epsilon..sub.2 = 1/5,(2.pi./.lambda.).multidot.h = 0.1), Q(.epsilon..sub.1 /.epsilon..sub.2 = 1/5,(2.pi./.lambda.).multidot.h = 0.00016), R(.epsilon..sub.1 /.epsilon..sub.2 = 1/500,(2.pi./.lambda.).multidot.h = 0.0004), and S(.epsilon..sub.1 /.epsilon..sub.2 = 1/500, (2.pi./.lambda.).multidot.h = 0.006) on a graph wherein the ratio .epsilon..sub.1 /.epsilon..sub.2 is represented on the ordinate and the function (2.pi./80 ).multidot.h on the abscissa, where .lambda. represents the wavelength of the elastic surface wave. As a result, the energy of the elastic surface waves is propagated from the input transducer to the output transducer with a sufficiently large power.

摘要翻译： 弹性表面波装置包括介电常数为ε2的压电基片，介电常数ε为1且厚度为h的电介质膜，并沉积在压电基片上，以及数字型输入输出传感器 形成在电介质膜上。 选择介电常数ε1 /ε2与与电介质膜的厚度成比例的函数2π/λ×h的比率以满足在由坐标点P（ε1 /ε 2 = 1/5，（2π/λ）×h = 0.1），Q（ε1 /ε2 = 1/5，（2π/λ）×h = 0.00016），R（ε1 /ε2 = 500，（2π/λ）xh = 0.0004）和S（ε1 /ε2 = 1/500，（2 pi /λ）xh = 0.006），其中ε1 / 纵坐标和横坐标上的函数（2 pi / 80）xh，其中λ表示弹性表面波的波长。 结果，弹性表面波的能量以足够大的功率从输入传感器传播到输出换能器。