公开(公告)号：US20090075460A1

公开(公告)日：2009-03-19

申请号：US12269294

申请日：2008-11-12

申请人： Hisashi OHTANI ,  Takeshi FUKUNAGA ,  Akiharu MIYANAGA

发明人： Hisashi OHTANI ,  Takeshi FUKUNAGA ,  Akiharu MIYANAGA

IPC分类号： H01L21/20

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L29/66757

摘要： A process for fabricating a semiconductor device comprising the steps of introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：向非晶硅膜引入加速非晶硅膜结晶的金属元素; 对非晶硅膜进行热处理以获得结晶硅膜; 向结晶硅膜照射激光束或强光; 并对用激光束或强光照射的结晶硅膜进行热处理。

公开(公告)号：US20120034766A1

公开(公告)日：2012-02-09

申请号：US13209861

申请日：2011-08-15

申请人： Hisashi OHTANI ,  Akiharu MIYANAGA ,  Takeshi FUKUNAGA ,  Hongyong ZHANG

发明人： Hisashi OHTANI ,  Akiharu MIYANAGA ,  Takeshi FUKUNAGA ,  Hongyong ZHANG

IPC分类号： H01L21/20

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

摘要翻译： 一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够加速非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶 电影。

公开(公告)号：US20100295046A1

公开(公告)日：2010-11-25

申请号：US12849964

申请日：2010-08-04

申请人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Toru MITSUKI ,  Akiharu MIYANAGA ,  Yasushi OGATA

发明人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Toru MITSUKI ,  Akiharu MIYANAGA ,  Yasushi OGATA

IPC分类号： H01L29/786

CPC分类号： H01L29/78675 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/3221 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78654 ,  Y10S438/973

摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.

摘要翻译： 在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。 得到的晶体半导体薄膜显示{110}取向。 由于单个晶粒具有大致相等的取向，所以晶体半导体薄膜基本上不具有晶界，并且具有被认为是单晶的结晶度或者被认为是如此。

公开(公告)号：US20080258147A1

公开(公告)日：2008-10-23

申请号：US12143035

申请日：2008-06-20

申请人： Hongyong ZHANG ,  Toru TAKAYAMA ,  Yasuhiko TAKEMURA ,  Akiharu MIYANAGA ,  Hisashi OHTANI

发明人： Hongyong ZHANG ,  Toru TAKAYAMA ,  Yasuhiko TAKEMURA ,  Akiharu MIYANAGA ,  Hisashi OHTANI

IPC分类号： H01L29/04

CPC分类号： H01L29/045 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757

摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

摘要翻译： 在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。 该膜在低于玻璃基板的应变点的温度下结晶。 此外，形成栅极绝缘膜和栅电极。 杂质通过自对准过程引入。 然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。 另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。 首先，将该催化元件与非晶硅膜的表面接触。 将膜在450至650℃加热以产生晶核。 将膜进一步在较高温度下加热以生长晶粒。 以这种方式，形成具有改善的结晶度的晶体硅膜。

公开(公告)号：US20080286950A1

公开(公告)日：2008-11-20

申请号：US12175481

申请日：2008-07-18

申请人： Akiharu MIYANAGA ,  Hisashi OHTANI ,  Yasuhiko TAKEMURA

发明人： Akiharu MIYANAGA ,  Hisashi OHTANI ,  Yasuhiko TAKEMURA

IPC分类号： H01L21/20

CPC分类号： H01L21/02672 ,  A61B18/20 ,  A61B2018/20359 ,  B23K26/08 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, following which the crystallized film is further exposed to a laser light for improving the crystallinity. The concentration of the catalyst metal in the semiconductor film and the location of the region to be added with the catalyst metal are so selected in order that a desired crystallinity and a desired crystal structure such as a vertical crystal growth or lateral crystal growth can be obtained. Further, active elements and driver elements of a circuit substrate for an active matrix type liquid crystal device are formed by such semiconductor devices having a desired crystallinity and crystal structure respectively.

摘要翻译： 制造使用结晶半导体膜的半导体器件。 通过向催化剂金属提供非晶硅膜以促进其结晶，然后加热进行热结晶，形成结晶半导体膜，随后将结晶膜进一步暴露于激光以提高结晶度。 选择半导体膜中的催化剂金属的浓度和添加有催化剂金属的区域的位置，以便可以获得期望的结晶度和期望的晶体结构，例如垂直晶体生长或横向晶体生长 。 此外，用于有源矩阵型液晶装置的电路基板的有源元件和驱动元件分别由具有期望的结晶度和晶体结构的这种半导体器件形成。

公开(公告)号：US20120061663A1

公开(公告)日：2012-03-15

申请号：US13226713

申请日：2011-09-07

申请人： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

发明人： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

IPC分类号： H01L29/12 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

摘要翻译： 本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。 通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（ 使用第一材料膜作为核的结晶氧化物半导体膜）。 作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

公开(公告)号：US20110318875A1

公开(公告)日：2011-12-29

申请号：US13230905

申请日：2011-09-13

申请人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

发明人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC分类号： H01L21/34

CPC分类号： H01L29/66772 ,  H01L29/6675 ,  H01L29/78618 ,  H01L29/7869

摘要： An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

摘要翻译： 一个实施例是包括交错（顶栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间 层。 有意地在源极和漏极电极层与半导体层之间提供具有比半导体层高的载流子浓度的缓冲层，从而形成欧姆接触。

公开(公告)号：US20110062436A1

公开(公告)日：2011-03-17

申请号：US12880343

申请日：2010-09-13

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

摘要翻译： 提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。 晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。 使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。 有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。 通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。 此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

公开(公告)号：US20110031105A1

公开(公告)日：2011-02-10

申请号：US12846000

申请日：2010-07-29

申请人： Akiharu MIYANAGA

发明人： Akiharu MIYANAGA

IPC分类号： B01J19/08

CPC分类号： C01B25/37 ,  B01J19/126 ,  B01J2219/00141 ,  C01B25/372 ,  C01B25/375 ,  C01B25/45 ,  H01M4/5825 ,  Y02E60/122 ,  Y02P70/54

摘要： It is an object to provide a manufacturing method for a large amount of positive electrode active material with few variations, having a highly uniform surface condition, micro-size, and high performance. An aqueous solution of a compound, which becomes the source material for the positive electrode active material, is put in an airtight container and irradiated with microwaves, thus heating while water in the airtight container is evaporated and a high pressure is formed in the air tight container. A large amount of micro-sized positive electrode active material having a highly uniform surface condition can be formed. A compound, which becomes the source material for the positive electrode active material, is put in an airtight container and irradiated with microwaves, thus heating while water in the airtight container is evaporated and a high pressure is formed in the air tight container.

摘要翻译： 本发明的目的是提供一种具有很小变化的大量正极活性材料的制造方法，具有高度均匀的表面状态，微尺寸和高性能。 将成为正极活性物质的原料的化合物的水溶液放入密闭容器中并用微波照射，从而在气密容器中的水蒸发并且在气密中形成高压的同时进行加热 容器。 可以形成具有高度均匀的表面状态的大量的微尺寸的正极活性物质。 将成为正极活性物质的原料的化合物放入气密容器中并照射微波，从而在气密容器中的水蒸发并且在气密容器中形成高压的同时进行加热。

公开(公告)号：US20110014745A1

公开(公告)日：2011-01-20

申请号：US12835115

申请日：2010-07-13

申请人： Akiharu MIYANAGA

发明人： Akiharu MIYANAGA

IPC分类号： H01L21/36

CPC分类号： H01L29/04 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a method for manufacturing a highly reliable semiconductor device including a transistor with stable electric characteristics. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; irradiating the oxide semiconductor film with an electromagnetic wave such as a microwave or a high frequency; forming a source electrode and a drain electrode over the oxide semiconductor film irradiated with the electromagnetic wave; and forming an oxide insulating film, which is in contact with part of the oxide semiconductor film, over the gate insulating film, the oxide semiconductor film, the source electrode, and the drain electrode.

摘要翻译： 本发明的目的是提供一种制造具有稳定电特性的晶体管的高可靠性半导体器件的方法。 一种制造半导体器件的方法包括以下步骤：在具有绝缘表面的衬底上形成栅电极; 在栅电极上形成栅极绝缘膜; 在所述栅极绝缘膜上形成氧化物半导体膜; 用微波或高频等电磁波照射氧化物半导体膜; 在用电磁波照射的氧化物半导体膜上形成源电极和漏电极; 以及在栅极绝缘膜，氧化物半导体膜，源电极和漏电极上形成与氧化物半导体膜的一部分接触的氧化物绝缘膜。