公开(公告)号：US4877173A

公开(公告)日：1989-10-31

申请号：US275604

申请日：1988-11-23

申请人： Hitoshi Fujimoto ,  Hisao Masuda

发明人： Hitoshi Fujimoto ,  Hisao Masuda

IPC分类号： H01L21/607 ,  B23K20/00 ,  B23K20/10 ,  H01L21/60

CPC分类号： H01L24/85 ,  B23K20/007 ,  B23K20/10 ,  H01L24/78 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/78301 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01039 ,  H01L2924/01082 ,  H01L2924/14

摘要： A wire bonding apparatus which bonds electrodes and external leads of a semiconductor integrated circuit element, a bonding head, a heat block having a lead frame which supports the semiconductor integrated circuit element in a bonding position, and an ultrasonic horn fixed to the bonding head and generating ultrasonic waves to bond the electrodes and the external leads of the circuit element when the circuit element is in the bonding position, the ultrasonic horn being formed of a metallic material having a thermal expansion coefficent of not more than about 5.times.10.sup.-6 /.degree.C. so as to limit locational errors of the ultrasonic horn due to thermal expansion to a specified value.

摘要翻译： 一种将半导体集成电路元件的电极和外部引线接合的引线接合装置，接合头，具有支撑半导体集成电路元件的接合位置的引线框架的加热块和固定到接合头的超声波喇叭， 当所述电路元件处于所述接合位置时，产生超声波以将所述电极和所述电路元件的外部引线接合，所述超声波喇叭由具有不大于约5×10 -6 /℃的热膨胀系数的金属材料形成 以便将由于热膨胀引起的超声波喇叭的定位误差限制在规定值。

公开(公告)号：US5087590A

公开(公告)日：1992-02-11

申请号：US426004

申请日：1989-10-24

申请人： Hitoshi Fujimoto ,  Hisao Masuda ,  Shuichi Osaka ,  Noriaki Uwagawa

发明人： Hitoshi Fujimoto ,  Hisao Masuda ,  Shuichi Osaka ,  Noriaki Uwagawa

IPC分类号： H01L21/52 ,  H01L21/00 ,  H01L21/48 ,  H01L21/50 ,  H01L23/495

CPC分类号： H01L24/85 ,  H01L21/4825 ,  H01L23/49513 ,  H01L23/49582 ,  H01L24/32 ,  H01L24/78 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48647 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85075 ,  H01L2224/85439 ,  H01L2224/85447 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  Y10S148/017 ,  Y10T29/49121 ,  Y10T428/12528

摘要： With a method of and an apparatus for manufacturing semiconductor devices using copper-type lead frames with no silver plating, semiconductor devices are continuously manufactured in the following steps: first, a semiconductor pellet having electrodes on its surface is bonded, through a resin material, to a die pad on a copper-alloy lead frame which is not silver-plated. The resin material used for the bonding is then cured by heating it for 120 seconds or less in a non-oxidizing-gas atmosphere having an oxygen density of 1000 ppm or less. Then, the thickness of the oxide film which is formed on the surface of the lead frame while curing the resin material is reduced to 20 .ANG. or less by keeping the lead frame in a deoxidizing-gas atmosphere having an oxygen density of 500 ppm or less. Afterwards, wire-bonding is effected between the electrodes of the semiconductor pellet and the inner leads of the lead frame in 12 seconds or less in a deoxidizing-gas atmosphere while keeping the oxygen density around the surface of the lead frame at 3000 ppm or less.

摘要翻译： 利用不使用镀银的铜型引线框架制造半导体器件的方法和装置，半导体器件按以下步骤连续制造：首先，通过树脂材料将表面上具有电极的半导体芯片接合， 到未镀银的铜合金引线框架上的芯片焊盘。 然后，在氧密度为1000ppm以下的非氧化性气体气氛中，通过将其加热120秒以下来固化用于接合的树脂材料。 然后，通过将引线框架保持在氧浓度为500ppm以下的脱氧气体气氛中，使树脂材料固化时在引线框架的表面上形成的氧化膜的厚度减小到20以下 。 然后，在脱氧气体气氛中，在半导体芯片的电极与引线框架的内引线之间进行12d以内的引线接合，同时将引线框架的表面周围的氧气密度保持在3000ppm以下 。

公开(公告)号：US4982728A

公开(公告)日：1991-01-08

申请号：US461070

申请日：1990-01-04

申请人： Hisao Masuda ,  Hitoshi Fujimoto ,  Shuichi Osaka

发明人： Hisao Masuda ,  Hitoshi Fujimoto ,  Shuichi Osaka

IPC分类号： H01L21/50 ,  H01L21/00

CPC分类号： H01L21/67144 ,  H01L2924/0002

摘要： An apparatus for assembling semiconductor devices includes a transportation line for transporting partially fabricated articles such as lead frames with a semiconductor chip mounted thereon; a working unit disposed in the transportation line for processing the partially fabricated articles by wire bonding or die bonding; an inspection unit disposed separately from the transportation line; a delivery unit for extracting a processed article from the transportation line, moving the extracted worked article to an inspection section and returning the processed article to the transportation line after checking; and a stock unit for stocking the processed articles. In the inspection section, one of the processed articles selected for sampling inspection is placed on a support and is checked with a microscope. During checking, the support and the microscope can be moved relative to each other to enable observation of the whole of the selected article.

摘要翻译： 一种用于组装半导体器件的装置包括用于传输部分制造的制品如具有安装在其上的半导体芯片的引线框架的输送线; 设置在运输线路中的工作单元，用于通过引线接合或芯片接合来处理部分制造的制品; 与输送线分离设置的检查单元; 用于从运输线路提取加工物品的运送单元，将提取的加工物品移动到检查部分，并且在检查后将处理物品返回到运送线路; 以及用于放置经处理的物品的库存单元。 在检查部中，将用于取样检查的被处理物之一置于支架上，并用显微镜检查。 在检查期间，支撑和显微镜可以相对于彼此移动，以便观察整个所选择的物品。

公开(公告)号：US5260604A

公开(公告)日：1993-11-09

申请号：US508507

申请日：1990-04-12

申请人： Shigeru Harada ,  Hisao Masuda ,  Reiji Tamaki

发明人： Shigeru Harada ,  Hisao Masuda ,  Reiji Tamaki

IPC分类号： H01L23/532 ,  H02L23/48

CPC分类号： H01L23/53219 ,  H01L23/532 ,  H01L2924/0002

摘要： In a semiconductor device, an impurity diffused layer serving as an active region is formed in a predetermined region of the surface of a semiconductor substrate of silicon, an underlayer insulating film is formed on the semiconductor substrate for the purpose of protecting and stabilizing the surface of the semiconductor substrate, and an interconnection electrically connected to the impurity diffused layer through a contact hole and formed on an Al-Si-Sn alloy, an Al-Si-Sb alloy or alloys having Ti added to the respective alloys, so that occurrence of an alloy pit and a silicon nodule is prevented. In addition, a completed protective film is formed on the interconnection and the underlayer insulating film and an aperture in a bonding pad region is formed in a predetermined region of the completed protective film, so that the interconnection and the bonding pad are electrically connected to each other. The proportion of silicon and other materials in the alloy are controlled to simultaneously avoid alloy pit and silicon nodule defects both at the contact hole and throughout the alloy conductor.

摘要翻译： 在半导体器件中，在硅的半导体衬底的表面的预定区域中形成用作有源区的杂质扩散层，为了保护和稳定表面的目的，在半导体衬底上形成下层绝缘膜 半导体衬底以及通过接触孔与杂质扩散层电连接并且在Al-Si-Sn合金，Al-Si-Sb合金或其合金上添加有Ti的合金形成的互连，从而发生 防止了合金凹坑和硅结节。 此外，在互连和下层绝缘膜上形成完整的保护膜，并且在完成的保护膜的预定区域中形成焊盘区域中的孔，使得互连和焊盘与每个 其他。 控制合金中硅和其他材料的比例，以同时避免接触孔和整个合金导体中的合金凹坑和硅结节缺陷。

公开(公告)号：US4916397A

公开(公告)日：1990-04-10

申请号：US227833

申请日：1988-08-03

申请人： Hisao Masuda ,  Syuichi Osaka

发明人： Hisao Masuda ,  Syuichi Osaka

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485 ,  H01L23/532

CPC分类号： H01L24/05 ,  H01L23/53223 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941

摘要： A semiconductor device having a bonding pad for connecting lead wires comprises a semiconductor substrate, a metal silicide film, a silicon dioxide film, a metal nitride film and an aluminum film. The silicon dioxide film has an opening in a portion corresponding to the bonding pad. The metal silicide film is formed in the portion corresponding to the bonding pad on the semiconductor substrate. The metal nitride film is formed on the metal silicide film and adhered to the metal silicide film. The aluminum film is provided as a bonding pad and formed on the metal nitride film.In a method for manufacturing the above described semiconductor device, the metal silicide film is formed on the semiconductor substrate and patterned. The silicon dioxide film is formed thereon. The opening is formed in the position corresponding to the bonding pad on the silicon dioxide film. The metal nitride film is formed in the opening. The aluminum film is formed on the metal nitride film.

摘要翻译： 具有用于连接引线的接合焊盘的半导体器件包括半导体衬底，金属硅化物膜，二氧化硅膜，金属氮化物膜和铝膜。 二氧化硅膜在与焊盘对应的部分具有开口。 金属硅化物膜形成在对应于半导体衬底上的焊盘的部分中。 在金属硅化物膜上形成金属氮化物膜并粘附到金属硅化物膜上。 铝膜设置为焊盘并形成在金属氮化物膜上。 在制造上述半导体器件的方法中，在半导体衬底上形成金属硅化物膜并进行图案化。 在其上形成二氧化硅膜。 开口形成在与二氧化硅膜上的接合焊盘相对应的位置。 金属氮化物膜形成在开口中。 铝膜形成在金属氮化物膜上。

公开(公告)号：US5481137A

公开(公告)日：1996-01-02

申请号：US246375

申请日：1994-05-18

申请人： Shigeru Harada ,  Hisao Masuda ,  Reiji Tamaki

发明人： Shigeru Harada ,  Hisao Masuda ,  Reiji Tamaki

IPC分类号： H01L23/532 ,  H01L23/48 ,  H01L29/34 ,  H01L29/46 ,  H01L29/62

CPC分类号： H01L23/53219 ,  H01L23/532 ,  H01L2924/0002

摘要： In a semiconductor device, an impurity diffused layer serving as an active region is formed in a predetermined region of the surface of a semiconductor substrate of silicon, an underlayer insulating film is formed on the semiconductor substrate for the purpose of protecting and stabilizing the surface of the semiconductor substrate, and an interconnection electrically connected to the impurity diffused layer through a contact hole and formed on an Al-Si-Sn alloy, an Al-Si-Sb alloy or alloys having Ti added to the respective alloys, so that occurrence of an alloy pit and a silicon nodule is prevented. In addition, a completed protective film is formed on the interconnection and the underlayer insulating film and an aperture in a bonding pad region is formed in a predetermined region of the completed protective film, so that the interconnection and the bonding pad are electrically connected to each other. The proportion of silicon and other materials in the alloy are controlled to simultaneously avoid alloy pit and silicon nodule defects both at the contact hole and throughout the alloy conductor.

摘要翻译： 在半导体器件中，在硅的半导体衬底的表面的预定区域中形成用作有源区的杂质扩散层，为了保护和稳定表面的目的，在半导体衬底上形成下层绝缘膜 半导体衬底以及通过接触孔与杂质扩散层电连接并且在Al-Si-Sn合金，Al-Si-Sb合金或其合金上添加有Ti的合金形成的互连，从而发生 防止了合金凹坑和硅结节。 此外，在互连和下层绝缘膜上形成完整的保护膜，并且在完成的保护膜的预定区域中形成焊盘区域中的孔，使得互连和焊盘与每个 其他。 控制合金中硅和其他材料的比例，以同时避免接触孔和整个合金导体中的合金凹坑和硅结节缺陷。