公开(公告)号：US20170200689A1

公开(公告)日：2017-07-13

申请号：US15107421

申请日：2015-07-22

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

发明人： Takashi YAMADA ,  Daizo ODA ,  Teruo HAIBARA ,  Ryo OISHI ,  Kazuyuki SAITO ,  Tomohiro UNO

IPC分类号： H01L23/00 ,  C22C9/04 ,  C22C9/06 ,  B23K35/02 ,  B23K35/30

CPC分类号： B23K35/0227 ,  B23K35/3013 ,  B23K35/302 ,  B23K2101/40 ,  B32B15/00 ,  B32B15/01 ,  B32B15/018 ,  C22C5/04 ,  C22C9/00 ,  C22C9/04 ,  C22C9/06 ,  C23C30/00 ,  C23C30/005 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/4382 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45118 ,  H01L2224/4512 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45178 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48824 ,  H01L2224/78 ,  H01L2224/78251 ,  H01L2224/85 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/0665 ,  H01L2924/0705 ,  H01L2924/10253 ,  H01L2924/186 ,  Y10T428/12868 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/265 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01045 ,  H01L2924/01049 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01031 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01083 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/00015 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/20105 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01027 ,  H01L2924/01047 ,  H01L2924/01013

摘要： A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 μm or more and 1.3 μm or less.

公开(公告)号：US09331049B2

公开(公告)日：2016-05-03

申请号：US12866797

申请日：2009-07-10

申请人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

发明人： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

IPC分类号： H01L23/48 ,  H01L23/00

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/4382 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48486 ,  H01L2224/48499 ,  H01L2224/48507 ,  H01L2224/48511 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48764 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85986 ,  H01L2225/06562 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/3025 ,  H01L2924/351 ,  Y10T428/12222 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00015 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20652 ,  H01L2924/20655 ,  H01L2924/20645 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/01049

摘要： The invention is aimed at providing a bonding structure of a copper-based bonding wire, realizing low material cost, high productivity in a continuous bonding in reverse bonding for wedge bonding on bumps, as well as excellent reliability in high-temperature heating, thermal cycle test, reflow test, HAST test or the like. The bonding structure is for connecting the bonding wire onto a ball bump formed on an electrode of a semiconductor device, the bonding wire and the ball bump respectively containing copper as a major component thereof. The bonding structure comprises a concentrated layer A provided at an interface of a bonding part of the ball bump and the bonding wire, wherein the concentration of a metal R other than copper in the concentrated layer A is not less than ten times the average concentration of the metal R in the ball bump; and a concentrated layer B provided at an interface of a bonding part of the ball bump and the electrode, wherein the concentration of the metal R in the concentrated layer B is not less than ten times the average concentration of the metal R in the ball bump.

摘要翻译： 本发明的目的在于提供铜基接合线的接合结构，实现低材料成本，在反向接合中的连续接合中的高生产率，用于凸块上的楔形接合，以及在高温加热，热循环中具有优异的可靠性 测试，回流测试，HAST测试等。 接合结构用于将接合线连接到形成在半导体器件的电极上的球凸点，接合线和分别包含铜作为其主要成分的球凸块。 接合结构包括设置在球凸块的接合部分和接合线的界面处的浓缩层A，其中浓缩层A中的铜以外的金属R的浓度不小于铜的平均浓度的十倍 球碰撞中的金属R; 以及集中层B，设置在所述球凸块的接合部的界面和所述电极之间，所述浓缩层B中的所述金属R的浓度不小于所述球凸块中的金属R的平均浓度的十倍 。

公开(公告)号：US08742258B2

公开(公告)日：2014-06-03

申请号：US13384819

申请日：2010-07-16

申请人： Shinichi Terashima ,  Tomohiro Uno ,  Takashi Yamada ,  Daizo Oda

发明人： Shinichi Terashima ,  Tomohiro Uno ,  Takashi Yamada ,  Daizo Oda

IPC分类号： H01B5/00

CPC分类号： C22C5/04 ,  C22C5/02 ,  C22C5/06 ,  C22C9/00 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/4516 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48764 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/85564 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/01034 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0102 ,  H01L2924/01013 ,  H01L2924/00014 ,  H01L2224/45144 ,  H01L2924/01204 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/01001 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01007 ,  H01L2224/45669 ,  H01L2924/2076 ,  H01L2924/01018 ,  H01L2224/48465 ,  H01L2924/20654 ,  H01L2924/20652 ,  H01L2924/20655 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01004 ,  H01L2924/01033

摘要： A bonding wire for semiconductor includes: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer. The alloy layer contains a noble metal and palladium and having a thickness of 1 to 80 nm. The noble metal is either gold or silver, and a concentration of the noble metal in the alloy layer is not less than 10% and not more than 75% by volume.

摘要翻译： 用于半导体的接合线包括：铜或铜合金的芯线; 含有钯的涂层，其厚度为10〜200nm; 以及形成在所述涂层的表面上的合金层。 合金层含有贵金属和钯，厚度为1〜80nm。 贵金属为金或银，合金层中贵金属的浓度为10体积％以上且75体积％以下。

公开(公告)号：US08432024B2

公开(公告)日：2013-04-30

申请号：US12768134

申请日：2010-04-27

申请人： Manfred Schneegans ,  Lothar Koenig

发明人： Manfred Schneegans ,  Lothar Koenig

IPC分类号： H01L23/495 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/3735 ,  H01L23/24 ,  H01L23/49568 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/325 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/8382 ,  H01L2224/85045 ,  H01L2224/85054 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2224/85948 ,  H01L2924/00011 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12043 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/00014 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/0002 ,  H01L2924/05432 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/83205 ,  H01L2924/01006

摘要： An integrated circuit includes a chip including a copper bond pad metallization, and a copper bond wire including a copper ball. The copper ball is bonded directly to the copper bond pad.

摘要翻译： 集成电路包括包括铜焊垫金属化的芯片和包括铜球的铜焊丝。 铜球直接与铜焊盘接合。

公开(公告)号：US08247911B2

公开(公告)日：2012-08-21

申请号：US12445789

申请日：2008-01-15

申请人： Tomohiro Uno ,  Shinichi Terashima ,  Keiichi Kimura ,  Takashi Yamada ,  Akihito Nishibayashi

发明人： Tomohiro Uno ,  Shinichi Terashima ,  Keiichi Kimura ,  Takashi Yamada ,  Akihito Nishibayashi

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L24/78 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43821 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/781 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/01001 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20652 ,  H01L2924/20655 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/2075 ,  H01L2924/01049 ,  H01L2924/01006

摘要： Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 μm, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.

摘要翻译： 提供一种接合线的接合结构及其形成方法，其可以解决多层铜线的实际应用中的现有技术的问题，提高球部的成形性和接合特性，提高楔连接的接合强度 ，具有较高的工业生产率。 主要由铜构成的接合线以及铜以外的导电性金属的浓度高的浓缩层形成在球接合部。 浓缩层形成在球接合部分附近或其界面处。 导电性金属的浓度为0.05〜20摩尔％的区域的厚度大于等于0.1微米，并且浓缩层中的导电性金属的浓度优选为平均浓度的5倍 导电金属在浓缩层以外的球接合部分的浓度。

公开(公告)号：US20110011619A1

公开(公告)日：2011-01-20

申请号：US12669612

申请日：2008-12-03

申请人： Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

发明人： Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

IPC分类号： H01B5/00

CPC分类号： C22C5/02 ,  B23K35/0222 ,  B23K35/302 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C9/01 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/45683 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48486 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/3025 ,  H01L2924/01004 ,  H01L2924/01001 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00015 ,  H01L2924/01202 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/20654 ,  H01L2924/20655 ,  H01L2924/20656 ,  H01L2924/20658 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2924/0104 ,  H01L2924/00013 ,  H01L2924/01049 ,  H01L2924/01006

摘要： It is an object of the present invention to provide a highly-functional bonding wire which can reduce damages at a neck part, has good linearity of loops, stability of loop heights, and stability of bonded shape of a bonding wire, and can cope with semiconductor packaging techniques, such as low looping, thinning, achievement of a fine pitch, and three-dimensional packaging. A semiconductor-device bonding wire comprises a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. The percentage of orientations in crystalline orientations in the lengthwise direction in the surface of the skin layer is greater than or equal to 50%.

摘要翻译： 本发明的目的是提供一种可以减少颈部损伤的高功能性接合线，线圈线性良好，线圈高度稳定性和接合线的接合形状的稳定性，能够应付 半导体封装技术，如低循环，变薄，实现细间距，以及三维封装。 半导体器件接合线包括由导电金属形成的芯部件和主要由与芯部件不同的面心立方金属形成的表皮层。 在表皮层表面的长度方向的结晶取向中的<100>取向的百分比大于或等于50％。

公开(公告)号：US20100230476A1

公开(公告)日：2010-09-16

申请号：US12788827

申请日：2010-05-27

申请人： Gary S. Gillotti ,  Steven Mak ,  E. Walter Frasch

发明人： Gary S. Gillotti ,  Steven Mak ,  E. Walter Frasch

IPC分类号： B23K31/02 ,  B23K37/00 ,  B23K37/06

CPC分类号： B23K20/007 ,  B23K35/38 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/781 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/78703 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85205 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A wire bonding machine is provided. The wire bonding machine includes (1) a bond site area for holding a semiconductor device during a wire bonding operation, and (2) a gas supply line configured to provide a gas at the bond site area from above the bond site area.

摘要翻译： 提供引线接合机。 引线接合机包括：（1）在引线接合操作期间用于保持半导体器件的接合位置区域;以及（2）气体供给管线，被配置为从接合位置区域的上方在接合部位区域提供气体。

公开(公告)号：US20100078464A1

公开(公告)日：2010-04-01

申请号：US12286641

申请日：2008-10-01

申请人： Shinichi Nishiura

发明人： Shinichi Nishiura

IPC分类号： B23K31/02 ,  B23K3/08

CPC分类号： B23K20/007 ,  B23K2101/40 ,  H01L21/67138 ,  H01L24/45 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/20755 ,  H01L2924/00015 ,  H01L2924/2075 ,  H01L2924/20754

摘要： A wire bonding apparatus including a capillary having a through-hole through which a wire is inserted; an inert gas feed section for feeding inert gas containing reducing gas to a region on the tip end side of the bonding tool; and a gas blowing nozzle for blowing out inert gas containing reducing gas along a base end surface of the capillary including an opening of the through-hole. The pressure in the through-hole is made lower than the ambient pressure by the gas blown out of the gas blowing nozzle toward the opening of the base end of the capillary, so that the inert gas containing reducing gas blown out of the inert gas feed section flows through the tip end into the through-hole, thus preventing oxidation of the part of the wire inside the through-hole of the capillary.

摘要翻译： 一种引线接合装置，包括：毛细管，具有插入导线的通孔; 惰性气体供给部分，用于将含有还原气体的惰性气体输送到接合工具的顶端侧的区域; 以及吹出喷嘴，用于沿着包括通孔的开口的毛细管的基端表面吹出含有还原气体的惰性气体。 通过从气体吹出喷嘴吹出的气体朝向毛细管的基端的开口将通孔中的压力设定得低于环境压力，使得从惰性气体进料中吹出的含有还原气体的惰性气体 截面通过尖端流入通孔，从而防止了毛细管的通孔内的金属部分的氧化。

公开(公告)号：US07658313B2

公开(公告)日：2010-02-09

申请号：US11704093

申请日：2007-02-08

申请人： Shinichi Nishiura ,  Fumio Miyano

发明人： Shinichi Nishiura ,  Fumio Miyano

IPC分类号： B23K1/06 ,  B23K5/20 ,  B23K20/10 ,  B23K37/00 ,  B23K31/00 ,  B23K31/02 ,  B23K35/38

CPC分类号： B23K20/007 ,  H01L24/45 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2924/00015

摘要： A ball forming device and method used in a bonding apparatus, including a bonding arm, a capillary attached to the bonding arm, an electronic flame off prove for forming a ball at the tip of a wire passing through the capillary, and a gas atmosphere forming unit for bringing the vicinity of the tip end of the wire into a gas atmosphere. The gas atmosphere forming unit is made of an inner wall element and an outer wall element with a hollow space section in between. The bonding arm side of the inner wall element has an inside open space which is wider than the portion of the bonding arm where the capillary is attached, and gas ejection ports are formed in the inner wall element. A gas supply pipe is connected to the outer wall element to supply, for instance, a reducing gas into the hollow space section.

摘要翻译： 一种接合装置中使用的球形装置和方法，包括粘合臂，附接到接合臂的毛细管，用于在穿过毛细管的丝线的尖端处形成球的电子火焰熄灭证明，以及形成气体的气体气氛 将导线的前端附近的气体单元装入气体气氛中。 气体气氛形成单元由内壁元件和其间具有中空空间部分的外壁元件制成。 内壁元件的接合臂侧具有比安装有毛细管的接合臂的部分宽的内部开放空间，在内壁元件中形成气体喷出口。 气体供给管连接到外壁元件，以将例如还原气体供应到中空空间部分中。

公开(公告)号：US20100025849A1

公开(公告)日：2010-02-04

申请号：US12489409

申请日：2009-06-22

申请人： Yong Chuan KOH ,  Jimmy SIAT ,  Jeffrey Nantes SALAMAT ,  Lope Vallespin PEPITO, JR. ,  Ronaldo Cayetano CALDERON ,  Rodel MANALAC ,  Pang Hup ONG ,  Kian Teng ENG

发明人： Yong Chuan KOH ,  Jimmy SIAT ,  Jeffrey Nantes SALAMAT ,  Lope Vallespin PEPITO, JR. ,  Ronaldo Cayetano CALDERON ,  Rodel MANALAC ,  Pang Hup ONG ,  Kian Teng ENG

IPC分类号： H01L23/498 ,  H01L21/60 ,  B23K31/02

CPC分类号： H01L25/0657 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48478 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48847 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85395 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85447 ,  H01L2225/0651 ,  H01L2225/06582 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/19107 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/01001 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/4826 ,  H01L2924/00015 ,  H01L2924/01049 ,  H01L2924/01006

摘要： A semiconductor package and a method for constructing the package are disclosed. The package includes a substrate and a die attached thereto. A first contact region is disposed on the substrate and a second contact region is disposed on the die. The first contact region, for example, comprises copper coated with an OSP material. A copper wire bond electrically couples the first and second contact regions. Wire bonding includes forming a ball bump on the first contact region having a flat top surface. Providing the flat top surface is achieved with a smoothing process. A ball bond is formed on the second contact region, followed by stitching the wire onto the flat top surface of the ball bump on the first contact region.

摘要翻译： 公开了一种用于构造封装的半导体封装和方法。 该包装包括一个基片和一个附着于其上的管芯。 第一接触区域设置在基板上，并且第二接触区域设置在管芯上。 第一接触区域例如包括用OSP材料涂覆的铜。 铜线接合电耦合第一和第二接触区域。 线接合包括在具有平坦顶表面的第一接触区域上形成球凸点。 通过平滑处理实现提供平坦的顶面。 在第二接触区域上形成球接合，然后将线缝合到第一接触区域上的球凸块的平坦顶表面上。