公开(公告)号：US20120267341A1

公开(公告)日：2012-10-25

申请号：US13430871

申请日：2012-03-27

申请人： Hitoshi KATO ,  Takeshi Kumagai

发明人： Hitoshi KATO ,  Takeshi Kumagai

IPC分类号： C23C16/56

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45534 ,  C23C16/4554 ,  C23C16/45551 ,  H01L21/02164 ,  H01L21/0234

摘要： A film deposition method includes steps of transferring a substrate having a pattern including a concave part into a vacuum chamber; supplying a first reaction gas to the substrate from a first reaction gas supplying part, thereby allowing the first reaction gas to be adsorbed on the substrate; supplying a second reaction gas that reacts with the first reaction gas to the substrate from a second reaction gas supplying part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and forming a reaction product of the first and the second reaction gases on the substrate; supplying an alteration gas to the substrate through an activated gas supplying part capable of activating the alteration gas; and supplying an etching gas to the substrate chamber through the activated gas supplying part under an environment where the reaction product is not formed.

摘要翻译： 膜沉积方法包括以下步骤：将具有凹部的图案的基板转印到真空室中; 从第一反应气体供给部向基板供给第一反应气体，由此使第一反应气体吸附在基板上; 从第二反应气体供给部分向基板供给与第一反应气体反应的第二反应气体，从而使吸附在基板上的第一反应气体与第二反应气体反应，形成第一反应气体的反应产物 基板上的第二反应气体; 通过能够激活所述改变气体的活化气体供给部件向所述基板供给改变气体; 以及在没有形成反应产物的环境下通过活性气体供给部分向基材室供给蚀刻气体。

公开(公告)号：US20120222615A1

公开(公告)日：2012-09-06

申请号：US13221188

申请日：2011-08-30

申请人： Hitoshi KATO ,  Tsuneyuki Okabe ,  Manabu Honma ,  Takeshi Kumagai ,  Yasushi Takeuchi

发明人： Hitoshi KATO ,  Tsuneyuki Okabe ,  Manabu Honma ,  Takeshi Kumagai ,  Yasushi Takeuchi

IPC分类号： C23C16/455

CPC分类号： H01L21/68764 ,  C23C16/45551 ,  H01L21/68771

摘要： A film deposition apparatus includes a first turntable including at least ten substrate receiving areas that receive corresponding 300 mm substrates; a first reaction gas supplying portion arranged in a first area inside the chamber to supply a first reaction gas; a second reaction gas supplying portion arranged in a second area away from the first reaction gas supplying portion along the rotation direction of the first turntable to supply a second reaction gas; and a separation area arranged between the first and the second areas. The separation area includes a separation gas supplying portion that supplies a separation gas that separates the first reaction and the second reaction gases, and a ceiling surface having a height so that a pressure in a space between the ceiling surface and the first turntable is higher with the separation gas than pressures in the first and the second areas.

摘要翻译： 一种成膜装置包括：第一转盘，其包括至少十个接收对应的300mm基板的基板接收区域; 第一反应气体供给部，其布置在所述室内的第一区域中，以供应第一反应气体; 第二反应气体供给部，其沿着第一转台的旋转方向配置在远离第一反应气体供给部的第二区域，供给第二反应气体; 以及布置在第一和第二区域之间的分离区域。 分离区域包括供给分离第一反应和第二反应气体的分离气体的分离气体供给部以及具有使顶棚面与第一转台之间的空间内的压力较高的高度的顶面， 分离气体而不是第一和第二区域中的压力。

公开(公告)号：US20130130512A1

公开(公告)日：2013-05-23

申请号：US13471587

申请日：2012-05-15

申请人： Hitoshi KATO ,  Shigehiro USHIKUBO ,  Tatsuya TAMURA ,  Shigenori OZAKI ,  Takeshi KUMAGAI ,  Hiroyuki KIKUCHI

发明人： Hitoshi KATO ,  Shigehiro USHIKUBO ,  Tatsuya TAMURA ,  Shigenori OZAKI ,  Takeshi KUMAGAI ,  Hiroyuki KIKUCHI

IPC分类号： H01L21/02

CPC分类号： H01L21/02274 ,  C23C16/345 ,  C23C16/4554 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32779 ,  H01L21/02164 ,  H01L21/0228

摘要： A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.

摘要翻译： 一种膜沉积方法，包括：将基板搬入真空室，并将基板放置在转台上的步骤; 转动转盘的一步; 以及吸附形成照射步骤，从第一反应气体供给部分向基板供给第一反应气体，以将第一反应气体吸附在基板上; 从第二反应气体供给部供给第二反应气体，使得吸附在基板上的第一反应气体与第二反应气体反应，以在基板上形成反应产物; 并向在第一反应气体供给部和第二反应气体供给部与旋转体的圆周方向分离的等离子体产生部供给含氢气体，以在转台上方产生等离子体，并将等离子体照射到 反应产物。

公开(公告)号：US20130149467A1

公开(公告)日：2013-06-13

申请号：US13467324

申请日：2012-05-09

申请人： Hitoshi KATO ,  Katsuyuki Hishiya ,  Hiroyuki Kikuchi ,  Shigehiro Ushikubo ,  Shigenori Ozaki

发明人： Hitoshi KATO ,  Katsuyuki Hishiya ,  Hiroyuki Kikuchi ,  Shigehiro Ushikubo ,  Shigenori Ozaki

IPC分类号： C23C16/54

CPC分类号： C23C16/54 ,  C23C16/4554 ,  H01J37/321

摘要： A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.

摘要翻译： 一种成膜装置包括：第一和第二气体依次供给多次的真空室，包括具有接收区域的第一表面和旋转真空室内部的接收区域的旋转台，第一部分供应第一气体 在第一区域中，第二部分经由分离区域将第二气体供给到沿着旋转台的周向方向与第一区域分离的第二区域;等离子体气体部分，其将等离子体产生气体供应到真空中的等离子体区域中 天线，面向旋转台的第一表面的天线，并通过电感耦合从等离子体空间内的等离子体产生气体产生等离子体，并且法拉第屏蔽层接地并设置在天线和等离子体空间之间，并且包括在方向 垂直于天线相交。

公开(公告)号：US20130059415A1

公开(公告)日：2013-03-07

申请号：US13602587

申请日：2012-09-04

申请人： Hitoshi KATO ,  Katsuyuki HISHIYA ,  Shigehiro USHIKUBO

发明人： Hitoshi KATO ,  Katsuyuki HISHIYA ,  Shigehiro USHIKUBO

IPC分类号： C23C16/505 ,  H01L21/50

CPC分类号： C23C16/45542 ,  C23C16/345 ,  C23C16/45551 ,  H01J37/321 ,  H01J37/32733

摘要： A film deposition apparatus includes a turntable having a substrate mounting area, a first plasma gas supplying part, a second plasma supplying part, a first plasma gas generating part to convert the first plasma generating gas to first plasma, and a second plasma generating part provided away from the first plasma generating part in a circumferential direction and to convert the second plasma generating gas to second plasma. The first plasma generating part includes an antenna facing the turntable so as to convert the first plasma generating gas to the first plasma, and a grounded Faraday shield between the antenna and an area where a plasma process is performed, and to include plural slits respectively extending in directions perpendicular to the antenna and arranged along an antenna extending direction to prevent an electric field from passing toward the substrate and to pass a magnetic field toward the substrate.

摘要翻译： 一种成膜装置，包括具有基板安装区域的转台，第一等离子体气体供给部，第二等离子体供给部，将第一等离子体产生气体转换为第一等离子体的第一等离子体气体发生部，以及第二等离子体产生部， 在圆周方向上离开第一等离子体产生部分并将第二等离子体产生气体转换成第二等离子体。 第一等离子体产生部件包括面向转盘的天线，以将第一等离子体产生气体转换成第一等离子体，以及天线与执行等离子体处理的区域之间的接地法拉第屏蔽，并且包括分别延伸的多个狭缝 在垂直于天线的方向上并沿着天线延伸方向布置，以防止电场通向衬底并使磁场朝向衬底。

公开(公告)号：US20130042813A1

公开(公告)日：2013-02-21

申请号：US13571546

申请日：2012-08-10

申请人： Hitoshi KATO ,  Shigehiro Ushikubo ,  Katsuyuki Hishiya

发明人： Hitoshi KATO ,  Shigehiro Ushikubo ,  Katsuyuki Hishiya

IPC分类号： C23C16/458

CPC分类号： C23C16/4412 ,  C23C16/45551 ,  C23C16/45578 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0228

摘要： A film deposition apparatus includes a turntable including plural substrate placing areas in the circumferential direction; a gas nozzle provided to extend from an inner edge to an outer edge of the substrate placing area; a gas evacuation port provided outside of an outer edge of the turntable and downstream in a rotational direction of the turntable with respect to the gas nozzle for evacuating the gas; and a regulation member including a wall portion provided between the gas nozzle and the gas evacuation port for isolating the gas nozzle and the gas evacuation port at least at a part between the inner edge to the outer edge of the substrate placing area while having a space extending from the inner edge to the outer edge of the substrate placing area when a substrate is placed on the substrate placing area.

摘要翻译： 一种成膜装置，包括在圆周方向上包括多个基板放置区域的转盘; 气体喷嘴，其设置成从所述基板放置区域的内边缘延伸到外边缘; 气体排出口，其设置在所述转台的外缘的外侧，并且相对于所述气体喷嘴排出所述转台，在所述转台的旋转方向的下游; 以及调节构件，其包括设置在所述气体喷嘴和所述气体排出口之间的壁部，用于至少在所述基板放置区域的内缘与外缘之间的部分处隔开所述气体喷嘴和所述排气口，同时具有空间 当基板被放置在基板放置区域上时，从基板放置区域的内边缘延伸到外边缘。

公开(公告)号：US20110155056A1

公开(公告)日：2011-06-30

申请号：US12969699

申请日：2010-12-16

申请人： Hitoshi KATO ,  Manabu HONMA ,  Yasushi TAKEUCHI

发明人： Hitoshi KATO ,  Manabu HONMA ,  Yasushi TAKEUCHI

IPC分类号： C23C16/458

CPC分类号： H01L21/68764 ,  C23C16/45538 ,  C23C16/45551 ,  H01L21/68771

摘要： A film deposition apparatus has a vacuum chamber in which a turntable placing plural substrates is rotated, the plural substrates come into contact with plural reaction gases supplied to plural process areas and thin films are deposited on surfaces of the plural substrates, and has plural reaction gas supplying portions for supplying the plural processing gases, a separation gas supplying portion for supplying a separation gas and an evacuation mechanism for ejecting the plural processing gases and the separation gas, wherein the plural process areas includes a first process area for causing a first reaction gas to adsorb on the surfaces of the plural substrates, and a second process area, having an area larger than the first process area, for causing the first reaction gas having adsorbed the surfaces of the plural substrates and a second reaction gas to react, and depositing the films on the surfaces of the plural substrates.

摘要翻译： 一种成膜装置具有：真空室，其中放置多个基板的转台旋转，多个基板与多个处理区域供应的多个反应气体接触，薄膜沉积在多个基板的表面上，并且具有多个反应气体 用于供给多种处理气体的供给部分，用于供给分离气体的分离气体供给部分和用于喷射多种处理气体和分离气体的排出机构，其中多个处理区域包括：第一处理区域，用于使第一反应气体 吸附在多个基板的表面上，以及具有比第一处理区域大的面积的第二处理区域，用于使吸附有多个基板的表面的第一反应气体和第二反应气体反应， 在多个基板的表面上的膜。

公开(公告)号：US20070055971A1

公开(公告)日：2007-03-08

申请号：US11554236

申请日：2006-10-30

申请人： Naoto WATANABE ,  Masatoshi YAGINUMA ,  Kiyoshi OKAMOTO ,  Hitoshi KATO

发明人： Naoto WATANABE ,  Masatoshi YAGINUMA ,  Kiyoshi OKAMOTO ,  Hitoshi KATO

IPC分类号： G06F9/44 ,  G06F12/00

CPC分类号： G06F8/60

摘要： A program operating apparatus is provided, which is capable of rewriting control programs for a plurality of CPUs without using any exclusive external apparatuses, thereby achieving a simplified and efficient rewrite operation. A control program stored in a ROM of a master CPU that controls the basic operation of the entire apparatus is transferred to a slave CPU and then written to an internal ROM of the slave CPU which controls the operations of functional units of the apparatus. The transfer of the control program is carried out when the mode of the apparatus is switched to a write control mode.

摘要翻译： 提供了一种程序操作装置，其能够重新编写多个CPU的控制程序，而不使用任何独占的外部设备，从而实现简化和有效的重写操作。 存储在控制整个装置的基本操作的主CPU的ROM中的控制程序被传送到从CPU，然后写入到控制装置的功能单元的操作的从CPU的内部ROM。 当将设备的模式切换到写入控制模式时，执行控制程序的传送。

公开(公告)号：US20120076937A1

公开(公告)日：2012-03-29

申请号：US13237999

申请日：2011-09-21

申请人： Hitoshi KATO ,  Yasushi Takeuchi

发明人： Hitoshi KATO ,  Yasushi Takeuchi

IPC分类号： C23C16/455 ,  C23C16/458

CPC分类号： C23C16/45551 ,  Y02T50/67

摘要： A film deposition device includes a chamber, a turntable, a first reactive gas supplying portion, a second reactive gas supplying portion, and a separation gas supplying portion. A convex part includes a ceiling surface to cover both sides of the separation gas supplying portion, form a first space between the ceiling surface and the turntable where a separation gas flows, and form a separation area between a first area and a second area, to maintain a pressure in the first space to be higher than pressures in the first area and the second area so that a first reactive gas and a second reactive gas are separated by the separation gas in the separation area. A block member is arranged to form a second space between the turntable and an internal surface of the chamber at an upstream part of the separation area along a rotation direction of the turntable.

摘要翻译： 膜沉积装置包括腔室，转台，第一反应气体供应部分，第二反应气体供应部分和分离气体供应部分。 凸部包括覆盖分离气体供给部的两侧的顶面，在分离气体流动的顶棚面与转台之间形成第一空间，在第一区域与第二区域之间形成分离区域， 保持第一空间中的压力高于第一区域和第二区域中的压力，使得第一反应气体和第二反应气体由分离区域中的分离气体分离。 块体构件被布置成沿着转台的旋转方向在分离区域的上游部分处在转台和腔室的内表面之间形成第二空间。

公开(公告)号：US20110155062A1

公开(公告)日：2011-06-30

申请号：US12965955

申请日：2010-12-13

申请人： Hitoshi KATO ,  Yasushi TAKEUCHI

发明人： Hitoshi KATO ,  Yasushi TAKEUCHI

IPC分类号： C23C16/00

CPC分类号： H01L21/68771 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/4584 ,  H01L21/68764

摘要： A film deposition apparatus includes a turntable including a substrate placement region at its surface; first and second reaction gas supply parts disposed in first and second supply regions in a chamber and supplying first and second reaction gases onto the surface, respectively; a separation region disposed between the first and second supply regions, the separation region including a separation gas supply part ejecting a separation gas separating the first and second reaction gases and a ceiling surface forming a separation space to supply the separation gas to the first and second supply regions; and first and second evacuation ports provided for the first and second supply regions. At least one of the first and second evacuation ports is disposed so as to guide the separation gas, supplied to the corresponding supply region, toward and along a direction in which the corresponding reaction gas supply part extends.

摘要翻译： 一种成膜装置，包括在其表面包括基板放置区域的转盘; 第一和第二反应气体供应部分设置在室中的第一和第二供应区域中，并分别将第一和第二反应气体供应到表面上; 分离区域，设置在第一和第二供应区域之间，分离区域包括喷射分离第一和第二反应气体的分离气体的分离气体供给部分和形成分离空​​间的顶面，以将分离气体供应到第一和第二 供应地区; 以及为第一和第二供应区域提供的第一和第二排气口。 所述第一和第二排气口中的至少一个设置成朝向并沿着相应的反应气体供应部分延伸的方向引导供应到相应供应区域的分离气体。