公开(公告)号：US20120222615A1

公开(公告)日：2012-09-06

申请号：US13221188

申请日：2011-08-30

申请人： Hitoshi KATO ,  Tsuneyuki Okabe ,  Manabu Honma ,  Takeshi Kumagai ,  Yasushi Takeuchi

发明人： Hitoshi KATO ,  Tsuneyuki Okabe ,  Manabu Honma ,  Takeshi Kumagai ,  Yasushi Takeuchi

IPC分类号： C23C16/455

CPC分类号： H01L21/68764 ,  C23C16/45551 ,  H01L21/68771

摘要： A film deposition apparatus includes a first turntable including at least ten substrate receiving areas that receive corresponding 300 mm substrates; a first reaction gas supplying portion arranged in a first area inside the chamber to supply a first reaction gas; a second reaction gas supplying portion arranged in a second area away from the first reaction gas supplying portion along the rotation direction of the first turntable to supply a second reaction gas; and a separation area arranged between the first and the second areas. The separation area includes a separation gas supplying portion that supplies a separation gas that separates the first reaction and the second reaction gases, and a ceiling surface having a height so that a pressure in a space between the ceiling surface and the first turntable is higher with the separation gas than pressures in the first and the second areas.

摘要翻译： 一种成膜装置包括：第一转盘，其包括至少十个接收对应的300mm基板的基板接收区域; 第一反应气体供给部，其布置在所述室内的第一区域中，以供应第一反应气体; 第二反应气体供给部，其沿着第一转台的旋转方向配置在远离第一反应气体供给部的第二区域，供给第二反应气体; 以及布置在第一和第二区域之间的分离区域。 分离区域包括供给分离第一反应和第二反应气体的分离气体的分离气体供给部以及具有使顶棚面与第一转台之间的空间内的压力较高的高度的顶面， 分离气体而不是第一和第二区域中的压力。

公开(公告)号：US07156923B2

公开(公告)日：2007-01-02

申请号：US10986282

申请日：2004-11-12

申请人： Hitoshi Kato ,  Kohei Fukushima ,  Atsushi Endo ,  Tatsuo Nishita ,  Takeshi Kumagai

发明人： Hitoshi Kato ,  Kohei Fukushima ,  Atsushi Endo ,  Tatsuo Nishita ,  Takeshi Kumagai

IPC分类号： C23C16/00 ,  C23C16/34 ,  C23C16/52 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02271 ,  C23C16/345 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/0217 ,  H01L21/3185 ,  Y10S438/905

摘要： A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).

摘要翻译： 热处理系统（1）包括能够通过六氯二硅烷和氨之间的相互作用在半导体晶片（10）上形成氮化硅膜的反应容器（2）和连接到反应容器（2）的排气管（16）。 反应容器2在500-900℃范围内的温度下被加热，排气管（16）在分解和清洁排气管16之前被加热到100℃。 氨通过工艺气体供给管（13）供给到反应容器（2）中，氨从反应容器（2）排出到排气管（16）中。

公开(公告)号：US08882916B2

公开(公告)日：2014-11-11

申请号：US13070844

申请日：2011-03-24

申请人： Takeshi Kumagai ,  Hitoshi Kato

发明人： Takeshi Kumagai ,  Hitoshi Kato

IPC分类号： C23C16/00 ,  C23C16/455

CPC分类号： C23C16/4554 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/4584

摘要： In an disclosed film deposition method, after a film deposition-alteration step is carried out that includes a film deposition process where a Si containing gas is adsorbed on a wafer W and the adsorbed Si containing gas on the wafer is oxidized by supplying an O3 gas to the upper surface of the wafer, thereby producing a silicon oxide layer(s) by rotating a turntable on which the wafer is placed, and an alteration process where the silicon oxide layers) is altered by plasma, an alteration step where the silicon oxide layer(s) is altered by plasma while the Si containing gas is not supplied.

摘要翻译： 在所公开的膜沉积方法中，在进行膜沉积改变步骤之后，其中包括在晶片W上吸附含Si气体的膜沉积工艺，并且通过提供O 3气体来氧化晶片上吸附的含Si气体 到晶片的上表面，从而通过旋转其上放置晶片的转台和氧化硅层的改变工艺）通过等离子体改变来制造氧化硅层，其中氧化硅 在不提供含Si气体的情况下，层被等离子体改变。

公开(公告)号：US20110159188A1

公开(公告)日：2011-06-30

申请号：US12972599

申请日：2010-12-20

申请人： Hitoshi Kato ,  Kohichi Orito ,  Hiroyuki Kikuchi ,  Muneyuki Otani ,  Takeshi Kumagai ,  Kensaku Narushima ,  Takashi Nishimori

发明人： Hitoshi Kato ,  Kohichi Orito ,  Hiroyuki Kikuchi ,  Muneyuki Otani ,  Takeshi Kumagai ,  Kensaku Narushima ,  Takashi Nishimori

IPC分类号： C23C16/34 ,  C23C16/00 ,  C23C16/52

CPC分类号： C23C16/4584 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45523 ,  C23C16/45591 ,  C23C16/4585 ,  C23C16/50 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/76843

摘要： A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.

摘要翻译： 当沉积氮化钛膜时，成膜装置以100rpm或更高的旋转速度使转台和每个气体喷嘴彼此相对旋转，以加速反应气体供应循环或反应产物的成膜循环。 在已经产生的反应产物的晶粒尺寸由于已经产生的反应产物的结晶开始生长之后，沉积下一个反应产物的膜。

公开(公告)号：US06844273B2

公开(公告)日：2005-01-18

申请号：US10066627

申请日：2002-02-06

申请人： Hitoshi Kato ,  Kohei Fukushima ,  Atsushi Endo ,  Tatsuo Nishita ,  Takeshi Kumagai

发明人： Hitoshi Kato ,  Kohei Fukushima ,  Atsushi Endo ,  Tatsuo Nishita ,  Takeshi Kumagai

IPC分类号： C23C16/34 ,  C23C16/44 ,  H01L21/318 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02271 ,  C23C16/345 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/0217 ,  H01L21/3185 ,  Y10S438/905

摘要： A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).

摘要翻译： 热处理系统（1）包括能够通过六氯二硅烷和氨之间的相互作用在半导体晶片（10）上形成氮化硅膜的反应容器（2）和连接到反应容器（2）的排气管（16）。 将反应容器2在500-900℃的温度范围内加热，并且排气管（16）在100℃下被加热，然后拆卸和清洁排气管16.氨通过工艺气体供应 管（13）进入反应容器（2），氨从反应容器（2）排出到排气管（16）中。

公开(公告)号：US20050081789A1

公开(公告)日：2005-04-21

申请号：US10986282

申请日：2004-11-12

申请人： Hitoshi Kato ,  Kohei Fukushima ,  Atsushi Endo ,  Tatsuo Nishita ,  Takeshi Kumagai

发明人： Hitoshi Kato ,  Kohei Fukushima ,  Atsushi Endo ,  Tatsuo Nishita ,  Takeshi Kumagai

IPC分类号： C23C16/34 ,  C23C16/44 ,  H01L21/318 ,  C23C16/00

CPC分类号： H01L21/02271 ,  C23C16/345 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/0217 ,  H01L21/3185 ,  Y10S438/905

摘要： A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).

摘要翻译： 热处理系统（1）包括能够通过六氯二硅烷和氨之间的相互作用在半导体晶片（10）上形成氮化硅膜的反应容器（2）和连接到反应容器（2）的排气管（16）。 将反应容器2在500-900℃的温度范围内加热，并且排气管（16）在100℃下被加热，然后拆卸和清洁排气管16.氨通过工艺气体供应 管（13）进入反应容器（2），氨从反应容器（2）排出到排气管（16）中。

公开(公告)号：US08906246B2

公开(公告)日：2014-12-09

申请号：US13430871

申请日：2012-03-27

申请人： Hitoshi Kato ,  Takeshi Kumagai

发明人： Hitoshi Kato ,  Takeshi Kumagai

IPC分类号： C23C16/56 ,  H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45534 ,  C23C16/4554 ,  C23C16/45551 ,  H01L21/02164 ,  H01L21/0234

摘要： A film deposition method includes steps of transferring a substrate having a pattern including a concave part into a vacuum chamber; supplying a first reaction gas to the substrate from a first reaction gas supplying part, thereby allowing the first reaction gas to be adsorbed on the substrate; supplying a second reaction gas that reacts with the first reaction gas to the substrate from a second reaction gas supplying part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and forming a reaction product of the first and the second reaction gases on the substrate; supplying an alteration gas to the substrate through an activated gas supplying part capable of activating the alteration gas; and supplying an etching gas to the substrate chamber through the activated gas supplying part under an environment where the reaction product is not formed.

摘要翻译： 膜沉积方法包括以下步骤：将具有凹部的图案的基板转印到真空室中; 从第一反应气体供给部向基板供给第一反应气体，由此使第一反应气体吸附在基板上; 从第二反应气体供给部分向基板供给与第一反应气体反应的第二反应气体，从而使吸附在基板上的第一反应气体与第二反应气体反应，形成第一反应气体的反应产物 基板上的第二反应气体; 通过能够激活所述改变气体的活化气体供给部件向所述基板供给改变气体; 以及在没有形成反应产物的环境下通过活性气体供给部分向基材室供给蚀刻气体。

公开(公告)号：US08642487B2

公开(公告)日：2014-02-04

申请号：US13471587

申请日：2012-05-15

申请人： Hitoshi Kato ,  Shigehiro Ushikubo ,  Tatsuya Tamura ,  Shigenori Ozaki ,  Takeshi Kumagai ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Shigehiro Ushikubo ,  Tatsuya Tamura ,  Shigenori Ozaki ,  Takeshi Kumagai ,  Hiroyuki Kikuchi

IPC分类号： H01L21/31

CPC分类号： H01L21/02274 ,  C23C16/345 ,  C23C16/4554 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32779 ,  H01L21/02164 ,  H01L21/0228

摘要： A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.

摘要翻译： 一种膜沉积方法，包括：将基板搬入真空室，并将基板放置在转台上的步骤; 转动转盘的一步; 以及吸附形成照射步骤，从第一反应气体供给部分向基板供给第一反应气体，以将第一反应气体吸附在基板上; 从第二反应气体供给部供给第二反应气体，使得吸附在基板上的第一反应气体与第二反应气体反应，以在基板上形成反应产物; 并向在第一反应气体供给部和第二反应气体供给部与旋转体的圆周方向分离的等离子体产生部供给含氢气体，以在转台上方产生等离子体，并将等离子体照射到 反应产物。

公开(公告)号：US20120267341A1

公开(公告)日：2012-10-25

申请号：US13430871

申请日：2012-03-27

申请人： Hitoshi KATO ,  Takeshi Kumagai

发明人： Hitoshi KATO ,  Takeshi Kumagai

IPC分类号： C23C16/56

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45534 ,  C23C16/4554 ,  C23C16/45551 ,  H01L21/02164 ,  H01L21/0234

摘要： A film deposition method includes steps of transferring a substrate having a pattern including a concave part into a vacuum chamber; supplying a first reaction gas to the substrate from a first reaction gas supplying part, thereby allowing the first reaction gas to be adsorbed on the substrate; supplying a second reaction gas that reacts with the first reaction gas to the substrate from a second reaction gas supplying part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and forming a reaction product of the first and the second reaction gases on the substrate; supplying an alteration gas to the substrate through an activated gas supplying part capable of activating the alteration gas; and supplying an etching gas to the substrate chamber through the activated gas supplying part under an environment where the reaction product is not formed.

摘要翻译： 膜沉积方法包括以下步骤：将具有凹部的图案的基板转印到真空室中; 从第一反应气体供给部向基板供给第一反应气体，由此使第一反应气体吸附在基板上; 从第二反应气体供给部分向基板供给与第一反应气体反应的第二反应气体，从而使吸附在基板上的第一反应气体与第二反应气体反应，形成第一反应气体的反应产物 基板上的第二反应气体; 通过能够激活所述改变气体的活化气体供给部件向所述基板供给改变气体; 以及在没有形成反应产物的环境下通过活性气体供给部分向基材室供给蚀刻气体。

公开(公告)号：US20120052693A1

公开(公告)日：2012-03-01

申请号：US13216350

申请日：2011-08-24

申请人： Shigenori OZAKI ,  Hitoshi Kato ,  Takeshi Kumagai

发明人： Shigenori OZAKI ,  Hitoshi Kato ,  Takeshi Kumagai

IPC分类号： H01L21/31 ,  H01L21/318 ,  H01L21/316 ,  B05C11/00 ,  B05C11/10

CPC分类号： C23C16/45548 ,  C23C16/402 ,  C23C16/45536

摘要： When alternately performing a film deposition step where a silicon-containing gas and O3 gas are alternately supplied to a substrate on a susceptor by rotating the susceptor thereby to forma thin film of the reaction product, and an alteration step where the reaction product is altered by irradiating plasma to the substrate, plasma intensity of the plasma is changed during film deposition. Specifically, the plasma intensity is lower when a thickness of the thin film is small (or at an initial stage of the film deposition—alteration step), and is increased as the thin film becomes thicker (or as the number of the film deposition steps is increased). Alternatively, the plasma intensity is higher when the thin film is relatively thin and then reduced.

摘要翻译： 当交替地进行薄膜沉积步骤，其中通过旋转基座将含硅气体和O 3气体交替地供应到基座上的基板，从而形成反应产物的薄膜，以及反应产物被改变的改变步骤 将等离子体照射到基板上，在膜沉积期间等离子体的等离子体强度发生变化。 具体地说，当薄膜的厚度小（或在薄膜沉积 - 改变步骤的初始阶段）时，等离子体强度较低，并且随着薄膜变厚而增加（或者作为薄膜沉积步骤的数量） 增加）。 或者，当薄膜相对较薄然后减小时，等离子体强度较高。