公开(公告)号：US07858419B2

公开(公告)日：2010-12-28

申请号：US12338882

申请日：2008-12-18

申请人： Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

发明人： Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/24

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

摘要翻译： 本发明的目的是提供一种氮化镓化合物半导体多层结构，其可用于制造在低电压下工作并保持良好的发光输出的氮化镓化合物半导体发光器件。 本发明的氮化镓化合物半导体多层结构包括基板，形成在基板上的n型层，发光层和p型层，所述发光层具有多量子阱结构，其中， 阱层和阻挡层重复交替层叠，所述发光层被n型层和p型层夹持，其中阱层包括厚部和薄部，阻挡层含有 掺杂剂。

公开(公告)号：US07601979B2

公开(公告)日：2009-10-13

申请号：US10586849

申请日：2005-01-28

申请人： Hisayuki Miki ,  Tetsuo Sakurai ,  Hitoshi Takeda

发明人： Hisayuki Miki ,  Tetsuo Sakurai ,  Hitoshi Takeda

IPC分类号： H01L29/06

CPC分类号： H01L33/24 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining a satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, an active layer, and a p-type layer formed on the substrate, the active layer being sandwiched by the n-type layer and the p-type layer, and the active layer comprising a thick portion and a thin portion, wherein the active layer has a flat lower surface (on the substrate side) and an uneven upper surface so as to form the thick portion and the thin portion.

摘要翻译： 本发明的目的是提供一种氮化镓化合物半导体多层结构，其用于制造在低电压下工作并保持令人满意的发光输出的氮化镓系化合物半导体发光元件。 本发明的氮化镓化合物半导体多层结构包括基板，形成在基板上的n型层，有源层和p型层，活性层夹在n型层和p型 层，有源层包括厚部分和薄部分，其中有源层具有平坦的下表面（在基板侧）和不平坦的上表面，以便形成厚部分和薄部分。

公开(公告)号：US20080093621A1

公开(公告)日：2008-04-24

申请号：US11661757

申请日：2005-09-13

申请人： Hitoshi Takeda ,  Hisayuki Miki

发明人： Hitoshi Takeda ,  Hisayuki Miki

IPC分类号： H01L33/00

CPC分类号： H01L29/155 ,  B82Y20/00 ,  H01L24/73 ,  H01L29/2003 ,  H01L33/02 ,  H01L33/025 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01S5/34333 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An object of the present invention provides an n-type Group III nitride semiconductor stacked layer structure of a low resistance having excellent flatness generating few cracks and pits in the uppermost surface. The inventive n-type Group III nitride semiconductor stacked layer structure comprises a first n-type layer which includes a layer containing n-type impurity atoms at a high concentration and a layer containing n-type impurity atoms at a low concentration, a second n-type layer containing n-type impurity atoms at an average concentration smaller than that of the first n-type layer, the second n-type layer neighboring the layer containing n-type impurity atoms at a low concentration in the first n-type layer.

摘要翻译： 本发明的目的是提供一种低电阻的n型III族氮化物半导体层叠结构，其在最上表面产生很少的裂纹和凹坑。 本发明的n型III族氮化物半导体堆叠层结构包括第一n型层，其包括含有高浓度的n型杂质原子的层和含有低浓度的n型杂质原子的层，第二n型 型层，其平均浓度小于第一n型层的n型杂质原子，与第一n型层中低浓度的含有n型杂质原子的层相邻的第二n型层 。

公开(公告)号：US20070170457A1

公开(公告)日：2007-07-26

申请号：US10589610

申请日：2005-02-23

申请人： Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

发明人： Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/24

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

摘要翻译： 本发明的目的是提供一种氮化镓化合物半导体多层结构，其可用于制造在低电压下工作并保持良好的发光输出的氮化镓化合物半导体发光器件。 本发明的氮化镓化合物半导体多层结构包括基板，形成在基板上的n型层，发光层和p型层，所述发光层具有多量子阱结构，其中， 阱层和阻挡层重复交替层叠，所述发光层被n型层和p型层夹持，其中阱层包括厚部和薄部，阻挡层含有 掺杂剂。

公开(公告)号：US07655491B2

公开(公告)日：2010-02-02

申请号：US10585999

申请日：2005-05-11

申请人： Hisayuki Miki ,  Hitoshi Takeda

发明人： Hisayuki Miki ,  Hitoshi Takeda

IPC分类号： H01L21/00

CPC分类号： C30B29/403 ,  C23C16/303 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0075

摘要： An object of the present invention is to provide a method for producing a p-type Group III nitride semiconductor which can be used to produce a light-emitting device exhibiting a low operation voltage and a sufficiently high reverse voltage.The inventive method for producing a p-type Group III nitride semiconductor comprises, during lowering temperature after completion of growth of a Group III nitride semiconductor containing a p-type dopant, immediately after completion of the growth, starting, at a temperature at which the growth has been completed, supply of a carrier gas composed of an inert gas and reduction of the flow rate of a nitrogen source; and stopping supply of the nitrogen source at a time in the course of lowering the temperature.

摘要翻译： 本发明的目的是提供一种可用于制造出具有低工作电压和足够高的反向电压的发光器件的p型III族氮化物半导体的制造方法。 本发明的p型III族氮化物半导体的制造方法包括在生长完成后立即生长含有p型掺杂剂的III族氮化物半导体生长完成后的降低温度期间，在 生长已经完成，供应由惰性气体组成的载气并降低氮源的流量; 并且在降低温度的过程中停止氮源的供给。

公开(公告)号：US07482635B2

公开(公告)日：2009-01-27

申请号：US10589610

申请日：2005-02-23

申请人： Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

发明人： Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

IPC分类号： H01L29/221 ,  H01L33/00 ,  H01L29/225

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/24

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output.The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

摘要翻译： 本发明的目的是提供一种氮化镓化合物半导体多层结构，其可用于制造在低电压下工作并保持良好的发光输出的氮化镓化合物半导体发光器件。 本发明的氮化镓化合物半导体多层结构包括基板，形成在基板上的n型层，发光层和p型层，所述发光层具有多量子阱结构，其中， 阱层和阻挡层重复交替层叠，所述发光层被n型层和p型层夹持，其中阱层包括厚部和薄部，阻挡层含有 掺杂剂。

公开(公告)号：US07612363B2

公开(公告)日：2009-11-03

申请号：US11661757

申请日：2005-09-13

申请人： Hitoshi Takeda ,  Hisayuki Miki

发明人： Hitoshi Takeda ,  Hisayuki Miki

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/24 ,  H01L33/00

CPC分类号： H01L29/155 ,  B82Y20/00 ,  H01L24/73 ,  H01L29/2003 ,  H01L33/02 ,  H01L33/025 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01S5/34333 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An n-type Group III nitride semiconductor stacked layer structure including a first n-type layer which includes a layer containing n-type impurity atoms at a high concentration and a layer containing n-type impurity atoms at a low concentration, a second n-type layer containing n-type impurity atoms at an average concentration smaller than that of the first n-type layer, the second n-type layer neighboring the layer containing n-type impurity atoms at a low concentration in the first n-type layer.

摘要翻译： 一种n型III族氮化物半导体层叠结构，包括：第一n型层，其包括含有高浓度的n型杂质原子的层和含有低浓度的n型杂质原子的层;第二n- 在第一n型层中平均浓度小于第一n型层的n型杂质原子的第二n型层与低浓度的n型杂质原子相邻。

公开(公告)号：US20080246053A1

公开(公告)日：2008-10-09

申请号：US10585999

申请日：2005-05-11

申请人： Hisayuki Miki ,  Hitoshi Takeda

发明人： Hisayuki Miki ,  Hitoshi Takeda

IPC分类号： H01L33/00 ,  H01L29/207

CPC分类号： C30B29/403 ,  C23C16/303 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0075

摘要： An object of the present invention is to provide a method for producing a p-type Group III nitride semiconductor which can be used to produce a light-emitting device exhibiting a low operation voltage and a sufficiently high reverse voltage.The inventive method for producing a p-type Group III nitride semiconductor comprises, during lowering temperature after completion of growth of a Group III nitride semiconductor containing a p-type dopant, immediately after completion of the growth, starting, at a temperature at which the growth has been completed, supply of a carrier gas composed of an inert gas and reduction of the flow rate of a nitrogen source; and stopping supply of the nitrogen source at a time in the course of lowering the temperature.

摘要翻译： 本发明的目的是提供一种用于制造可用于生产具有低操作电压和足够高的反向电压的发光器件的p型III族氮化物半导体的方法。 本发明的p型III族氮化物半导体的制造方法包括在生长完成后立即生长含有p型掺杂剂的III族氮化物半导体生长完成后的降低温度期间，在 生长已经完成，供应由惰性气体组成的载气并降低氮源的流量; 并且在降低温度的过程中停止氮源的供给。

公开(公告)号：US20070164296A1

公开(公告)日：2007-07-19

申请号：US10586849

申请日：2005-01-28

申请人： Hisayuki Miki ,  Tetsuo Sakurai ,  Hitoshi Takeda

发明人： Hisayuki Miki ,  Tetsuo Sakurai ,  Hitoshi Takeda

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining a satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, an active layer, and a p-type layer formed on the substrate, the active layer being sandwiched by the n-type layer and the p-type layer, and the active layer comprising a thick portion and a thin portion, wherein the active layer has a flat lower surface (on the substrate side) and an uneven upper surface so as to form the thick portion and the thin portion.

摘要翻译： 本发明的目的是提供一种氮化镓化合物半导体多层结构，其用于制造在低电压下工作并保持令人满意的发光输出的氮化镓系化合物半导体发光元件。 本发明的氮化镓化合物半导体多层结构包括基板，形成在基板上的n型层，有源层和p型层，活性层夹在n型层和p型 层，有源层包括厚部分和薄部分，其中有源层具有平坦的下表面（在基板侧）和不平坦的上表面，以便形成厚部分和薄部分。

公开(公告)号：US07456590B2

公开(公告)日：2008-11-25

申请号：US10832074

申请日：2004-04-26

申请人： Hitoshi Takeda ,  Masayasu Ito

发明人： Hitoshi Takeda ,  Masayasu Ito

IPC分类号： H05B37/02

CPC分类号： H05B33/0848 ,  H05B33/0854

摘要： A vehicular lamp used in an automobile includes: semiconductor light emitting elements for emitting light; a time measurement unit for measuring time in which the semiconductor light emitting elements continues to emit light; and a current supplying unit for supplying a supply current that increases as the time measured by the time measurement unit increases, to the semiconductor light emitting elements.

摘要翻译： 用于汽车的车灯包括：用于发光的半导体发光元件; 用于测量半导体发光元件持续发光的时间的时间测量单元; 以及电流供给单元，用于向半导体发光元件供给随着时间测量单元测量的时间增加而增加的电源电流。