公开(公告)号：US07482635B2

公开(公告)日：2009-01-27

申请号：US10589610

申请日：2005-02-23

申请人： Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

发明人： Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

IPC分类号： H01L29/221 ,  H01L33/00 ,  H01L29/225

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/24

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output.The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

摘要翻译： 本发明的目的是提供一种氮化镓化合物半导体多层结构，其可用于制造在低电压下工作并保持良好的发光输出的氮化镓化合物半导体发光器件。 本发明的氮化镓化合物半导体多层结构包括基板，形成在基板上的n型层，发光层和p型层，所述发光层具有多量子阱结构，其中， 阱层和阻挡层重复交替层叠，所述发光层被n型层和p型层夹持，其中阱层包括厚部和薄部，阻挡层含有 掺杂剂。

公开(公告)号：US07858419B2

公开(公告)日：2010-12-28

申请号：US12338882

申请日：2008-12-18

申请人： Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

发明人： Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/24

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

摘要翻译： 本发明的目的是提供一种氮化镓化合物半导体多层结构，其可用于制造在低电压下工作并保持良好的发光输出的氮化镓化合物半导体发光器件。 本发明的氮化镓化合物半导体多层结构包括基板，形成在基板上的n型层，发光层和p型层，所述发光层具有多量子阱结构，其中， 阱层和阻挡层重复交替层叠，所述发光层被n型层和p型层夹持，其中阱层包括厚部和薄部，阻挡层含有 掺杂剂。

公开(公告)号：US20070170457A1

公开(公告)日：2007-07-26

申请号：US10589610

申请日：2005-02-23

申请人： Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

发明人： Masato Kobayakawa ,  Hitoshi Takeda ,  Hisayuki Miki ,  Tetsuo Sakurai

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/24

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

摘要翻译： 本发明的目的是提供一种氮化镓化合物半导体多层结构，其可用于制造在低电压下工作并保持良好的发光输出的氮化镓化合物半导体发光器件。 本发明的氮化镓化合物半导体多层结构包括基板，形成在基板上的n型层，发光层和p型层，所述发光层具有多量子阱结构，其中， 阱层和阻挡层重复交替层叠，所述发光层被n型层和p型层夹持，其中阱层包括厚部和薄部，阻挡层含有 掺杂剂。

公开(公告)号：US20080230800A1

公开(公告)日：2008-09-25

申请号：US10585744

申请日：2005-04-27

申请人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

发明人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

IPC分类号： H01L33/00 ,  H01L29/22 ,  H01L21/205

CPC分类号： H01L33/025 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/32

摘要： An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

摘要翻译： 本发明的目的是提供一种具有优异的平坦度和很少凹坑的低电阻n型III族氮化物半导体层状结构。 本发明的n型III族氮化物半导体层状结构包括基板，并且在基板上堆叠包括n型杂质原子较高浓度层和n型杂质原子较低浓度层的n型杂质浓度周期性变化层 所述低浓度层堆叠在所述较高浓度层上。

公开(公告)号：US07855386B2

公开(公告)日：2010-12-21

申请号：US10585744

申请日：2005-04-27

申请人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

发明人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/025 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/32

摘要： An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits.The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

摘要翻译： 本发明的目的是提供一种具有优异的平坦度和很少凹坑的低电阻n型III族氮化物半导体层状结构。 本发明的n型III族氮化物半导体层状结构包括基板，并且在基板上堆叠包括n型杂质原子较高浓度层和n型杂质原子较低浓度层的n型杂质浓度周期性变化层 所述低浓度层堆叠在所述较高浓度层上。

公开(公告)号：US20080076200A1

公开(公告)日：2008-03-27

申请号：US11662474

申请日：2005-09-12

申请人： Masato Kobayakawa ,  Hisayuki Miki

发明人： Masato Kobayakawa ,  Hisayuki Miki

IPC分类号： H01L21/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method for the fabrication of a Group III nitride semiconductor includes the steps of installing a substrate in a reaction vessel, forming a Group III nitride semiconductor on the substrate, causing a solid nitrogen compound to exist in the reaction vessel as a nitrogen source for a Group III nitride semiconductor and supplying a raw material gas as a source for a Group III element into the reaction vessel to fabricate the Group III nitride semiconductor.

摘要翻译： 制造III族氮化物半导体的方法包括以下步骤：在反应容器中安装衬底，在衬底上形成III族氮化物半导体，使固体氮化合物存在于反应容器中作为氮源 III族氮化物半导体，并将作为第III族元素的源的原料气体供给到反应容器中以制造III族氮化物半导体。

公开(公告)号：US20070152232A1

公开(公告)日：2007-07-05

申请号：US10591584

申请日：2005-03-03

申请人： Masato Kobayakawa ,  Hideki Tomozawa ,  Hisayuki Miki

发明人： Masato Kobayakawa ,  Hideki Tomozawa ,  Hisayuki Miki

IPC分类号： H01L33/00

CPC分类号： H01L29/2003 ,  H01L31/0304 ,  H01L31/105 ,  H01L33/14 ,  H01L33/32 ,  Y02E10/544

摘要： A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride (GaN) compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity and, in combination therewith, hydrogen. The top portion includes a region containing a Group III element and a Group V element at a non-stoichiometric atomic ratio.

摘要翻译： 氮化镓基半导体器件具有作为包含p型杂质且呈p型导电的氮化镓（GaN）化合物半导体层的p型层。 p型层包括顶部和位于顶部下方的内部。 内部部分含有p型杂质，并与其结合，含有氢。 顶部包括含有非化学计量原子比的III族元素和V族元素的区域。

公开(公告)号：US07453091B2

公开(公告)日：2008-11-18

申请号：US10591585

申请日：2005-03-03

申请人： Masato Kobayakawa ,  Hideki Tomozawa ,  Hisayuki Miki

发明人： Masato Kobayakawa ,  Hideki Tomozawa ,  Hisayuki Miki

IPC分类号： H01L29/26

CPC分类号： H01L31/0304 ,  H01L33/025 ,  H01L33/32 ,  H01S5/3054 ,  H01S5/32341 ,  Y02E10/544

摘要： A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity element and, in combination therewith, hydrogen.

摘要翻译： 氮化镓类半导体器件具有作为含有p型杂质且呈p型导电性的氮化镓系化合物半导体层的p型层。 p型层包括顶部和位于顶部下方的内部。 内部包含p型杂质元素，并与其组合，包含氢。

公开(公告)号：US20070187693A1

公开(公告)日：2007-08-16

申请号：US10591585

申请日：2005-03-03

申请人： Masato Kobayakawa ,  Hideki Tomozawa ,  Hisayuki Miki

发明人： Masato Kobayakawa ,  Hideki Tomozawa ,  Hisayuki Miki

IPC分类号： H01L29/15 ,  H01L33/00 ,  H01L31/00

CPC分类号： H01L31/0304 ,  H01L33/025 ,  H01L33/32 ,  H01S5/3054 ,  H01S5/32341 ,  Y02E10/544

摘要： A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity element and, in combination therewith, hydrogen.

摘要翻译： 氮化镓类半导体器件具有作为含有p型杂质且呈p型导电性的氮化镓系化合物半导体层的p型层。 p型层包括顶部和位于顶部下方的内部。 内部包含p型杂质元素，并与其组合，包含氢。

公开(公告)号：US07674644B2

公开(公告)日：2010-03-09

申请号：US11662474

申请日：2005-09-12

申请人： Masato Kobayakawa ,  Hisayuki Miki

发明人： Masato Kobayakawa ,  Hisayuki Miki

IPC分类号： H01L21/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method for the fabrication of a Group III nitride semiconductor includes the steps of installing a substrate in a reaction vessel, forming a Group III nitride semiconductor on the substrate, causing a solid nitrogen compound to exist in the reaction vessel as a nitrogen source for a Group III nitride semiconductor and supplying a raw material gas as a source for a Group III element into the reaction vessel to fabricate the Group III nitride semiconductor.

摘要翻译： 制造III族氮化物半导体的方法包括以下步骤：在反应容器中安装衬底，在衬底上形成III族氮化物半导体，使固体氮化合物存在于反应容器中，作为氮源 III族氮化物半导体，并将作为第III族元素的源的原料气体供给到反应容器中以制造III族氮化物半导体。