摘要:
This disclosure provides an electroluminescent ("EL") display device having anode, cathode, insulator and organic EL layers. The anode and cathode layers sandwich the other two layers, and the insulator layer is patterned to selectively block flow of current through the EL layers, and thereby locally block generation of light. The patterned insulator layer allows a single panel to display multiple visual attributes, yet does not require electrode patterning. The patterned insulator can be fabricated using photoresist exposure and development procedures. The photoresist is laid on top of a commercially available substrate/electrode layered pair, and is developed to create an assembly that can be completed in a single vacuum deposition process. By etching a small region of the electrode from the commercially available layered pair, and by choosing a deposition frame that blocks deposition on a second, different small region, electrical terminals may be coupled to the panel with a reduced risk of an electrical short.
摘要:
An organic electroluminescent device with a conducting polymer layer beneath the hole transport layer. A conducting polymer layer of doped polyaniline (PANI) is spin-cast onto an indium-tin oxide (ITO) anode coating on a glass substrate. Then a hole transport layer, for example TPD or another aromatic tertiary amine, is vapor-deposited onto the conducting polymer layer, followed by an electron transport layer and a cathode. Polyester may be blended into the PANI before spin-casting and then removed by a selective solvent after the spincasting, leaving a microporous layer of PANI on the anode. The conducting polymer layer may instead be made of a .pi.-conjugated oxidized polymer or of TPD dispersed in a polymer binder that is doped with an electron-withdrawing compound. An additional layer of copper-phthalocyanine, or of TPD in a polymer binder, may be disposed between the conducting polymer layer and the hole transport layer. The conducting polymer layer may serve as the anode, in which case the ITO is omitted.
摘要:
A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.
摘要:
An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
摘要:
A high refractive index package material is described that encapsulates a semiconductor light emitting chip. The high refractive index package material is transparent to the light emitted from the chip and includes a host material and a plurality of nanoparticles held in the host material. The host material has a refractive index lower than that of the chip and is transparent to the light emitted from the chip. The nanoparticles are (1) formed from a material having a refractive index higher than that of the host material, (2) substantially smaller in size than the wavelength of the light emitted from the chip, (3) included in the host material at such a density that the effective refractive index of the high refractive index package material is higher than that of the host material without decreasing the transparency of the high refractive index package material.
摘要:
A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.
摘要:
An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
摘要:
A method for processing coplanar semiconductor devices of different types as provided. The method includes the steps of: forming a first layer for formation of a first device region on a substrate, forming an epitaxial semiconductor lift-off layer above the first device region, removing a portion of the first device region to open areas for the formation of the second device region, depositing epitaxially a second device region, and removing the liftoff layer to leave the first and second device regions remaining on the substrate.
摘要:
A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.
摘要:
Vertical cavity optical devices, and a method of manufacturing therefor, are provided where the method includes partially forming a first vertical cavity optical device on a wafer, adjusting the lasing wavelength of the first vertical cavity optical device, and fixing the lasing wavelength of the first vertical cavity optical device to complete the forming thereof.