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    Semiconductor processing methods, and semiconductor constructions
    1.
    发明申请
    Semiconductor processing methods, and semiconductor constructions 有权
    半导体加工方法和半导体结构

    公开(公告)号：US20060292787A1

    公开(公告)日：2006-12-28

    申请号：US11168861

    申请日：2005-06-28

    申请人： Hongmei Wang ,  Fred Fishburn ,  Janos Fucsko ,  T. Allen ,  Richard Lane ,  Robert Hanson ,  Kevin Shea

    发明人： Hongmei Wang ,  Fred Fishburn ,  Janos Fucsko ,  T. Allen ,  Richard Lane ,  Robert Hanson ,  Kevin Shea

    IPC分类号： H01L21/8244 ,  H01L29/94

    CPC分类号： H01L21/76232

    摘要： The invention includes methods of forming isolation regions. An opening can be formed to extend into a semiconductor material, and an upper periphery of the opening can be protected with a liner while a lower periphery is unlined. The unlined portion can then be etched to form a widened region of the opening. Subsequently, the opening can be filled with insulative material to form an isolation region. Transistor devices can then be formed on opposing sides of the isolation region, and electrically isolated from one another with the isolation region. The invention also includes semiconductor constructions containing an electrically insulative isolation structure extending into a semiconductor material, with the structure having a bulbous bottom region and a stem region extending upwardly from the bottom region to a surface of the semiconductor material.

    摘要翻译： 本发明包括形成隔离区域的方法。 可以形成开口以延伸到半导体材料中，并且可以用衬垫保护开口的上周边，而下边缘是无衬里的。 然后可以对无衬里部分进行蚀刻以形成开口的加宽区域。 随后，开口可以用绝缘材料填充以形成隔离区域。 晶体管器件然后可以形成在隔离区域的相对侧上，并且与隔离区域彼此电隔离。 本发明还包括包含延伸到半导体材料中的电绝缘隔离结构的半导体结构，其结构具有球形底部区域和从底部区域向上延伸到半导体材料表面的杆区域。

    Semiconductor constructions
    2.
    发明申请
    Semiconductor constructions 审中-公开
    半导体结构

    公开(公告)号：US20070117347A1

    公开(公告)日：2007-05-24

    申请号：US11655386

    申请日：2007-01-17

    申请人： Hongmei Wang ,  Fred Fishburn ,  Janos Fucsko ,  T. Allen ,  Richard Lane ,  Robert Hanson ,  Kevin Shea

    发明人： Hongmei Wang ,  Fred Fishburn ,  Janos Fucsko ,  T. Allen ,  Richard Lane ,  Robert Hanson ,  Kevin Shea

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76232

    摘要： The invention includes methods of forming isolation regions. An opening can be formed to extend into a semiconductor material, and an upper periphery of the opening can be protected with a liner while a lower periphery is unlined. The unlined portion can then be etched to form a widened region of the opening. Subsequently, the opening can be filled with insulative material to form an isolation region. Transistor devices can then be formed on opposing sides of the isolation region, and electrically isolated from one another with the isolation region. The invention also includes semiconductor constructions containing an electrically insulative isolation structure extending into a semiconductor material, with the structure having a bulbous bottom region and a stem region extending upwardly from the bottom region to a surface of the semiconductor material.

    摘要翻译： 本发明包括形成隔离区域的方法。 可以形成开口以延伸到半导体材料中，并且可以用衬垫保护开口的上周边，而下边缘是无衬里的。 然后可以对无衬里部分进行蚀刻以形成开口的加宽区域。 随后，开口可以用绝缘材料填充以形成隔离区域。 晶体管器件然后可以形成在隔离区域的相对侧上，并且与隔离区域彼此电隔离。 本发明还包括包含延伸到半导体材料中的电绝缘隔离结构的半导体结构，其结构具有球形底部区域和从底部区域向上延伸到半导体材料表面的杆区域。

    Semiconductor processing methods
    3.
    发明授权
    Semiconductor processing methods 有权
    半导体加工方法

    公开(公告)号：US07935602B2

    公开(公告)日：2011-05-03

    申请号：US11168861

    申请日：2005-06-28

    申请人： Hongmei Wang ,  Fred D. Fishburn ,  Janos Fucsko ,  T. Earl Allen ,  Richard H. Lane ,  Robert J. Hanson ,  Kevin R. Shea

    发明人： Hongmei Wang ,  Fred D. Fishburn ,  Janos Fucsko ,  T. Earl Allen ,  Richard H. Lane ,  Robert J. Hanson ,  Kevin R. Shea

    IPC分类号： H01L21/336 ,  H01L21/311 ,  H01L21/302

    CPC分类号： H01L21/76232

    摘要： The invention includes methods of forming isolation regions. An opening can be formed to extend into a semiconductor material, and an upper periphery of the opening can be protected with a liner while a lower periphery is unlined. The unlined portion can then be etched to form a widened region of the opening. Subsequently, the opening can be filled with insulative material to form an isolation region. Transistor devices can then be formed on opposing sides of the isolation region, and electrically isolated from one another with the isolation region. The invention also includes semiconductor constructions containing an electrically insulative isolation structure extending into a semiconductor material, with the structure having a bulbous bottom region and a stem region extending upwardly from the bottom region to a surface of the semiconductor material.

    摘要翻译： 本发明包括形成隔离区域的方法。 可以形成开口以延伸到半导体材料中，并且可以用衬垫保护开口的上周边，而下边缘是无衬里的。 然后可以对无衬里部分进行蚀刻以形成开口的加宽区域。 随后，开口可以用绝缘材料填充以形成隔离区域。 晶体管器件然后可以形成在隔离区域的相对侧上，并且与隔离区域彼此电隔离。 本发明还包括包含延伸到半导体材料中的电绝缘隔离结构的半导体结构，其结构具有球形底部区域和从底部区域向上延伸到半导体材料表面的杆区域。

    Methods of forming oxides, methods of forming semiconductor constructions, and methods of forming isolation regions
    5.
    发明授权
    Methods of forming oxides, methods of forming semiconductor constructions, and methods of forming isolation regions 有权
    形成氧化物的方法，形成半导体结构的方法以及形成隔离区的方法

    公开(公告)号：US08962446B2

    公开(公告)日：2015-02-24

    申请号：US13031584

    申请日：2011-02-21

    申请人： Robert J. Hanson ,  Janos Fucsko

    发明人： Robert J. Hanson ,  Janos Fucsko

    IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/02 ,  H01L21/312 ,  H01L21/316

    CPC分类号： H01L21/76224 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3125 ,  H01L21/31612

    摘要： Some embodiments include methods of forming isolation regions in which spin-on material (for example, polysilazane) is converted to a silicon dioxide-containing composition. The conversion may utilize one or more oxygen-containing species (such as ozone) and a temperature of less than or equal to 300° C. In some embodiments, the spin-on material is formed within an opening in a semiconductor material to form a trenched isolation region. Other dielectric materials may be formed within the opening in addition to the silicon dioxide-containing composition formed from the spin-on material. Such other dielectric materials may include silicon dioxide formed by chemical vapor deposition and/or silicon dioxide formed by high-density plasma chemical vapor deposition.

    摘要翻译： 一些实施方案包括形成其中旋涂材料（例如，聚硅氮烷）转化为含二氧化硅的组合物的隔离区域的方法。 转化可以利用一种或多种含氧物质（例如臭氧）和小于或等于300℃的温度。在一些实施方案中，旋涂材料形成在半导体材料的开口内以形成 沟隔离区。 除了由旋涂材料形成的含二氧化硅的组合物之外，可以在开口内形成其它电介质材料。 这种其它介电材料可以包括通过化学气相沉积形成的二氧化硅和/或通过高密度等离子体化学气相沉积形成的二氧化硅。

    SEMICONDUCTOR DEVICE STRUCTURES AND COMPOSITIONS FOR FORMING SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE STRUCTURES AND COMPOSITIONS FOR FORMING SAME 有权
    半导体器件结构及其形成组合物

    公开(公告)号：US20130009310A1

    公开(公告)日：2013-01-10

    申请号：US13610187

    申请日：2012-09-11

    申请人： Sanjeev Sapra ,  Janos Fucsko

    发明人： Sanjeev Sapra ,  Janos Fucsko

    IPC分类号： H01L23/48 ,  C09K13/04 ,  C09K13/08 ,  C09K13/00

    CPC分类号： H01L21/76883 ,  H01L21/32115 ,  H01L21/32134

    摘要： A method of removing a metal nitride material is disclosed. The method comprises forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material. The semiconductor device structure is subjected to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material. Resulting semiconductor device structures are also disclosed, as are compositions used to form the semiconductor device structures.

    摘要翻译： 公开了去除金属氮化物材料的方法。 该方法包括形成包括暴露的金属材料和暴露的金属氮化物材料的半导体器件结构。 对半导体器件结构进行包含水，臭氧和至少一种添加剂的溶液，以比暴露的金属材料大得多的速率去除暴露的金属氮化物材料。 还公开了所得半导体器件结构，以及用于形成半导体器件结构的组合物。

    Methods of forming oxides, methods of forming semiconductor constructions, and methods of forming isolation regions
    10.
    发明申请
    Methods of forming oxides, methods of forming semiconductor constructions, and methods of forming isolation regions 有权
    形成氧化物的方法，形成半导体结构的方法以及形成隔离区的方法

    公开(公告)号：US20110183492A1

    公开(公告)日：2011-07-28

    申请号：US13031584

    申请日：2011-02-21

    申请人： Robert J. Hanson ,  Janos Fucsko

    发明人： Robert J. Hanson ,  Janos Fucsko

    IPC分类号： H01L21/31

    CPC分类号： H01L21/76224 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3125 ,  H01L21/31612

    摘要： Some embodiments include methods of forming isolation regions in which spin-on material (for example, polysilazane) is converted to a silicon dioxide-containing composition. The conversion may utilize one or more oxygen-containing species (such as ozone) and a temperature of less than or equal to 300° C. In some embodiments, the spin-on material is formed within an opening in a semiconductor material to form a trenched isolation region. Other dielectric materials may be formed within the opening in addition to the silicon dioxide-containing composition formed from the spin-on material. Such other dielectric materials may include silicon dioxide formed by chemical vapor deposition and/or silicon dioxide formed by high-density plasma chemical vapor deposition.

    摘要翻译： 一些实施方案包括形成其中旋涂材料（例如，聚硅氮烷）转化为含二氧化硅的组合物的隔离区域的方法。 转化可以利用一种或多种含氧物质（例如臭氧）和小于或等于300℃的温度。在一些实施方案中，旋涂材料形成在半导体材料的开口内以形成 沟隔离区。 除了由旋涂材料形成的含二氧化硅的组合物之外，可以在开口内形成其它电介质材料。 这种其它介电材料可以包括通过化学气相沉积形成的二氧化硅和/或通过高密度等离子体化学气相沉积形成的二氧化硅。