公开(公告)号：US07824501B2

公开(公告)日：2010-11-02

申请号：US11781334

申请日：2007-07-23

申请人： Hoon-sang Choi ,  Jong-cheol Lee ,  Ki-vin Im ,  Eun-ae Chung ,  Sang-yeol Kang ,  Young-sun Kim ,  Kwang-hee Lee

发明人： Hoon-sang Choi ,  Jong-cheol Lee ,  Ki-vin Im ,  Eun-ae Chung ,  Sang-yeol Kang ,  Young-sun Kim ,  Kwang-hee Lee

IPC分类号： B08B9/08 ,  B08B3/08 ,  B08B3/10 ,  B08B5/00

CPC分类号： C23C16/45525 ,  C23C16/4401 ,  C23C16/45544

摘要： Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.

摘要翻译： 提供了一种在电介质层沉积工艺期间清洁原子层沉积设备的蒸发器的原位方法，以防止蒸发器和原子层沉积设备中的喷嘴堵塞。 在电介质层沉积过程中，重复以下步骤：将用于电介质层沉积的第一源气体供应到原子层沉积设备的腔室中; 净化第一源气; 将第二源气体供应到原子层沉积设备的腔室中; 吹扫第二源气体时，在供给用于电介质层沉积的第一源气体并再次供应第一源气体之前执行清洗蒸发器的原位方法。

公开(公告)号：US20080121184A1

公开(公告)日：2008-05-29

申请号：US11781334

申请日：2007-07-23

申请人： Hoon-sang Choi ,  Jong-cheol Lee ,  Ki-vin Im ,  Eun-ae Chung ,  Sang-yeol Kang ,  Young-sun Kim ,  Kwang-hee Lee

发明人： Hoon-sang Choi ,  Jong-cheol Lee ,  Ki-vin Im ,  Eun-ae Chung ,  Sang-yeol Kang ,  Young-sun Kim ,  Kwang-hee Lee

IPC分类号： B08B5/00 ,  C23C16/00

CPC分类号： C23C16/45525 ,  C23C16/4401 ,  C23C16/45544

摘要： Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.

摘要翻译： 提供了一种在电介质层沉积工艺期间清洁原子层沉积设备的蒸发器的原位方法，以防止蒸发器和原子层沉积设备中的喷嘴堵塞。 在电介质层沉积过程中，重复以下步骤：将用于电介质层沉积的第一源气体供应到原子层沉积设备的腔室中; 净化第一源气; 将第二源气体供应到原子层沉积设备的腔室中; 吹扫第二源气体时，在供给用于电介质层沉积的第一源气体并再次供应第一源气体之前执行清洗蒸发器的原位方法。

公开(公告)号：US07759718B2

公开(公告)日：2010-07-20

申请号：US11865869

申请日：2007-10-02

申请人： Sang-yeol Kang ,  Jong-cheol Lee ,  Ki-vin Im ,  Jae-hyun Yeo ,  Hoon-sang Choi ,  Eun-ae Chung

发明人： Sang-yeol Kang ,  Jong-cheol Lee ,  Ki-vin Im ,  Jae-hyun Yeo ,  Hoon-sang Choi ,  Eun-ae Chung

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L21/31641 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L28/40

摘要： A method of forming a dielectric layer in a capacitor adapted for use in a semiconductor device is disclosed. The method includes forming a first ZrO2 layer, forming an interfacial layer using a plasma treatment on the first ZrO2 layer, and forming a second ZrO2 layer on the interfacial layer.

摘要翻译： 公开了一种在适用于半导体器件的电容器中形成电介质层的方法。 该方法包括形成第一ZrO 2层，在第一ZrO 2层上使用等离子体处理形成界面层，以及在界面层上形成第二ZrO 2层。

公开(公告)号：US20090085160A1

公开(公告)日：2009-04-02

申请号：US12238822

申请日：2008-09-26

申请人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

发明人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

IPC分类号： H01L29/92

CPC分类号： H01L29/51 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/513

摘要： Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

摘要翻译： 本发明提供一种半导体器件，其具有立方晶系或四方晶系的绝缘层，具有良好的电特性。 半导体器件包括：半导体衬底，包括有源区，形成在半导体衬底的有源区中的晶体管，形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极，形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

公开(公告)号：US08710564B2

公开(公告)日：2014-04-29

申请号：US13418472

申请日：2012-03-13

申请人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

发明人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

IPC分类号： H01L27/108

CPC分类号： H01L29/51 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/513

摘要： Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

摘要翻译： 本发明提供一种半导体器件，其具有立方晶系或四方晶系的绝缘层，具有良好的电特性。 半导体器件包括：半导体衬底，包括有源区，形成在半导体衬底的有源区中的晶体管，形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极，形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

公开(公告)号：US20120168904A1

公开(公告)日：2012-07-05

申请号：US13418472

申请日：2012-03-13

申请人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

发明人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

IPC分类号： H01L29/92

CPC分类号： H01L29/51 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/513

摘要： Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

摘要翻译： 本发明提供一种半导体器件，其具有立方晶系或四方晶系的绝缘层，具有良好的电特性。 半导体器件包括：半导体衬底，包括有源区，形成在半导体衬底的有源区中的晶体管，形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极，形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

公开(公告)号：US08159012B2

公开(公告)日：2012-04-17

申请号：US12238822

申请日：2008-09-26

申请人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

发明人： Jong-cheol Lee ,  Jun-noh Lee ,  Ki-vin Im ,  Ki-yeon Park ,  Sung-hae Lee ,  Sang-yeol Kang

IPC分类号： H01L27/108

CPC分类号： H01L29/51 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/513

摘要： Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

摘要翻译： 本发明提供一种半导体器件，其具有立方晶系或四方晶系的绝缘层，具有良好的电特性。 半导体器件包括：半导体衬底，包括有源区，形成在半导体衬底的有源区中的晶体管，形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极，形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

公开(公告)号：US08357593B2

公开(公告)日：2013-01-22

申请号：US12688044

申请日：2010-01-15

申请人： Ki-chul Kim ,  Youn-soo Kim ,  Ki-vin Im ,  Cha-young Yoo ,  Jong-cheol Lee ,  Ki-yeon Park ,  Hoon-sang Choi ,  Se-hoon Oh

发明人： Ki-chul Kim ,  Youn-soo Kim ,  Ki-vin Im ,  Cha-young Yoo ,  Jong-cheol Lee ,  Ki-yeon Park ,  Hoon-sang Choi ,  Se-hoon Oh

IPC分类号： H01L21/322

CPC分类号： H01L21/314 ,  H01L21/02041 ,  H01L21/67034

摘要： Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate.

摘要翻译： 提供了除去吸附或结合到半导体衬底的表面的水的方法，以及使用本文所述除去水的方法沉积原子层的方法。 除去水的方法包括向半导体衬底的表面施加化学溶剂，并从半导体衬底的表面除去化学溶剂。

公开(公告)号：US20100190320A1

公开(公告)日：2010-07-29

申请号：US12688044

申请日：2010-01-15

申请人： Ki-chul Kim ,  Youn-soo Kim ,  Ki-vin Im ,  Cha-young Yoo ,  Jong-cheol Lee ,  Ki-yeon Park ,  Hoon-sang Choi ,  Se-hoon Oh

发明人： Ki-chul Kim ,  Youn-soo Kim ,  Ki-vin Im ,  Cha-young Yoo ,  Jong-cheol Lee ,  Ki-yeon Park ,  Hoon-sang Choi ,  Se-hoon Oh

IPC分类号： H01L21/30 ,  B08B3/00

CPC分类号： H01L21/314 ,  H01L21/02041 ,  H01L21/67034

摘要： Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate.

摘要翻译： 提供了除去吸附或结合到半导体衬底的表面的水的方法，以及使用本文所述除去水的方法沉积原子层的方法。 除去水的方法包括向半导体衬底的表面施加化学溶剂，并从半导体衬底的表面除去化学溶剂。

公开(公告)号：US20090309187A1

公开(公告)日：2009-12-17

申请号：US12544500

申请日：2009-08-20

申请人： Jae-hyoung Choi ,  Cha-young Yoo ,  Jong-cheol Lee ,  Kyoung-ryul Yoon ,  Ki-vin Im ,  Hoon-sang Choi ,  Se-hoon Oh ,  Se-hwi Cho

发明人： Jae-hyoung Choi ,  Cha-young Yoo ,  Jong-cheol Lee ,  Kyoung-ryul Yoon ,  Ki-vin Im ,  Hoon-sang Choi ,  Se-hoon Oh ,  Se-hwi Cho

IPC分类号： H01L29/92 ,  H01G4/06

CPC分类号： H01L28/40 ,  H01L27/10852 ,  H01L28/91

摘要： Provided is a semiconductor device including a multi-layer dielectric structure and a method of fabricating the semiconductor device. According to one example embodiment, the semiconductor device includes a capacitor comprising: first and second electrodes facing each other; at least one first dielectric layer that is disposed between the first and second electrodes, the at least one first dielectric layer comprising a first high-k dielectric layer doped with silicon; and at least one second dielectric layer that is disposed between the at least one first dielectric layer and any of the first and second electrodes, the at least one second dielectric layer having a higher crystallization temperature than that of the first dielectric layer.

摘要翻译： 提供了包括多层电介质结构的半导体器件和制造该半导体器件的方法。 根据一个示例性实施例，半导体器件包括电容器，包括：彼此面对的第一和第二电极; 设置在所述第一和第二电极之间的至少一个第一介电层，所述至少一个第一介电层包括掺杂有硅的第一高k电介质层; 以及设置在所述至少一个第一介电层和所述第一和第二电极中的任一个之间的至少一个第二电介质层，所述至少一个第二电介质层具有比所述第一介电层的结晶温度更高的结晶温度。