公开(公告)号：US20060065914A1

公开(公告)日：2006-03-30

申请号：US10711637

申请日：2004-09-29

申请人： Huajie Chen ,  Dureseti Chidambarrao ,  Sang-Hyun Oh ,  Siddhartha Panda ,  Werner Rausch ,  Tsutomu Sato ,  Henry Utomo

发明人： Huajie Chen ,  Dureseti Chidambarrao ,  Sang-Hyun Oh ,  Siddhartha Panda ,  Werner Rausch ,  Tsutomu Sato ,  Henry Utomo

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/6659 ,  H01L21/26506 ,  H01L21/28052 ,  H01L21/28079 ,  H01L21/7624 ,  H01L29/1045 ,  H01L29/165 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： A field effect transistor (“FET”) is provided which includes a gate stack overlying a single-crystal semiconductor region of a substrate, a pair of first spacers disposed over sidewalls of said gate stack, and a pair of regions consisting essentially of a single-crystal semiconductor alloy which are disposed on opposite sides of the gate stack. Each of the semiconductor alloy regions is spaced a first distance from the gate stack. The source region and drain region of the FET are at least partly disposed in respective ones of the semiconductor alloy regions, such that the source region and the drain region are each spaced a second distance from the gate stack by a first spacer of the pair of first spacers, the second distance being different from the first distance.

公开(公告)号：US20060292779A1

公开(公告)日：2006-12-28

申请号：US11463777

申请日：2006-08-10

申请人： Huajie Chen ,  Dureseti Chidambarrao ,  Sang-Hyun Oh ,  Siddhartha Panda ,  Werner Rausch ,  Tsutomu Sato ,  Henry Utomo

发明人： Huajie Chen ,  Dureseti Chidambarrao ,  Sang-Hyun Oh ,  Siddhartha Panda ,  Werner Rausch ,  Tsutomu Sato ,  Henry Utomo

IPC分类号： H01L21/8234

CPC分类号： H01L29/6659 ,  H01L21/26506 ,  H01L21/28052 ,  H01L21/28079 ,  H01L21/7624 ,  H01L29/1045 ,  H01L29/165 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： A field effect transistor (“FET”) is provided which includes a gate stack overlying a single-crystal semiconductor region of a substrate, a pair of first spacers disposed over sidewalls of said gate stack, and a pair of regions consisting essentially of a single-crystal semiconductor alloy which are disposed on opposite sides of the gate stack. Each of the semiconductor alloy regions is spaced a first distance from the gate stack. The source region and drain region of the FET are at least partly disposed in respective ones of the semiconductor alloy regions, such that the source region and the drain region are each spaced a second distance from the gate stack by a first spacer of the pair of first spacers, the second distance being different from the first distance.

摘要翻译： 提供场效应晶体管（“FET”），其包括覆盖衬底的单晶半导体区域的栅极堆叠，设置在所述栅极堆叠的侧壁上的一对第一间隔区，以及基本上由单个 晶体半导体合金，其设置在栅叠层的相对侧上。 每个半导体合金区域与栅极叠层隔开第一距离。 FET的源极区域和漏极区域至少部分地设置在半导体合金区域的相应半导体合金区域中，使得源极区域和漏极区域之间的距离与栅极叠层间隔开第二距离， 第一间隔物，第二距离与第一距离不同。

公开(公告)号：US20060151837A1

公开(公告)日：2006-07-13

申请号：US10905598

申请日：2005-01-12

申请人： Huajie Chen ,  Dureseti Chidambarrao ,  Siddhartha Panda ,  Sang-Hyun Oh ,  Henry Utomo ,  Werner Rausch

发明人： Huajie Chen ,  Dureseti Chidambarrao ,  Siddhartha Panda ,  Sang-Hyun Oh ,  Henry Utomo ,  Werner Rausch

IPC分类号： H01L29/94

CPC分类号： H01L29/7842 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/7848

摘要： Disclosed is an integrated circuit structure and a method of making such a structure that has a substrate and P-type and N-type transistors on the substrate. The N-type transistor extension and source/drain regions comprise dopants implanted into the substrate. The P-type transistor extension and source/drain regions partially include a strained epitaxial silicon germanium, wherein the strained silicon germanium comprises of two layers, with a top layer that is closer to the gate stack than the bottom layer. The strained silicon germanium is in-situ doped and creates longitudinal stress on the channel region.

摘要翻译： 公开了一种集成电路结构以及在衬底上具有衬底和P型和N型晶体管的结构的方法。 N型晶体管延伸和源极/漏极区域包括注入到衬底中的掺杂剂。 P型晶体管延伸和源极/漏极区域部分地包括应变外延硅锗，其中应变硅锗包括两层，顶层比底层更靠近栅极堆叠。 应变硅锗被原位掺杂并在沟道区域上产生纵向应力。

公开(公告)号：US20060024934A1

公开(公告)日：2006-02-02

申请号：US10710737

申请日：2004-07-30

申请人： Kevin Chan ,  Huajie Chen ,  Michael Gribelyuk ,  Judson Holt ,  Woo-Hyeong Lee ,  Ryan Mitchell ,  Renee Mo ,  Dan Mocuta ,  Werner Rausch ,  Paul Ronsheim ,  Henry Utomo

发明人： Kevin Chan ,  Huajie Chen ,  Michael Gribelyuk ,  Judson Holt ,  Woo-Hyeong Lee ,  Ryan Mitchell ,  Renee Mo ,  Dan Mocuta ,  Werner Rausch ,  Paul Ronsheim ,  Henry Utomo

IPC分类号： H01L21/22 ,  H01L21/331

CPC分类号： H01L21/28044 ,  H01L21/324

摘要： The present invention provides a method for retarding the diffusion of dopants from a first material layer (typically a semiconductor) into an overlayer or vice versa. In the method of the present invention, diffusion of dopants from the first semiconductor into the overlayer or vice versa is retarded by forming a monolayer comprising carbon and oxygen between the two layers. The monolayer is formed in the present invention utilizing a chemical pretreatment process in which a solution including iodine and an alcohol such as methanol is employed.

摘要翻译： 本发明提供了一种用于延迟掺杂剂从第一材料层（通常为半导体）扩散到覆盖层或反之亦然的方法。 在本发明的方法中，通过在两层之间形成包含碳和氧的单层来延缓掺杂剂从第一半导体扩散到覆层中或反之亦然。 使用化学预处理方法在本发明中形成单层，其中使用包括碘和醇如甲醇的溶液。

公开(公告)号：US20060076627A1

公开(公告)日：2006-04-13

申请号：US10711899

申请日：2004-10-12

申请人： Huajie Chen ,  Omer Dokumaci ,  Oleg Gluschenkov ,  Werner Rausch

发明人： Huajie Chen ,  Omer Dokumaci ,  Oleg Gluschenkov ,  Werner Rausch

IPC分类号： H01L29/94

CPC分类号： H01L21/26533 ,  H01L21/02238 ,  H01L21/26513 ,  H01L21/31654 ,  H01L21/31675 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/66636

摘要： A method of forming a field effect transistor creates shallower and sharper junctions, while maximizing dopant activation in processes that are consistent with current manufacturing techniques. More specifically, the invention increases the oxygen content of the top surface of a silicon substrate. The top surface of the silicon substrate is preferably cleaned before increasing the oxygen content of the top surface of the silicon substrate. The oxygen content of the top surface of the silicon substrate is higher than other portions of the silicon substrate, but below an amount that would prevent epitaxial growth. This allows the invention to epitaxially grow a silicon layer on the top surface of the silicon substrate. Further, the increased oxygen content substantially limits dopants within the epitaxial silicon layer from moving into the silicon substrate.

摘要翻译： 形成场效应晶体管的方法产生更浅和更尖的结，同时在与当前制造技术一致的工艺中最大化掺杂剂活化。 更具体地，本发明增加了硅衬底的顶表面的氧含量。 优选在增加硅衬底的顶表面的氧含量之前清洁硅衬底的顶表面。 硅衬底的顶表面的氧含量高于硅衬底的其它部分，但低于防止外延生长的量。 这允许本发明在硅​​衬底的顶表面上外延生长硅层。 此外，增加的氧含量基本上限制外延硅层内的掺杂剂移动到硅衬底中。

公开(公告)号：US20090008705A1

公开(公告)日：2009-01-08

申请号：US11773607

申请日：2007-07-05

申请人： Huilong Zhu ,  Thomas W. Dyer ,  Jack A. Mandelman ,  Werner Rausch

发明人： Huilong Zhu ,  Thomas W. Dyer ,  Jack A. Mandelman ,  Werner Rausch

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7842 ,  H01L29/66795 ,  H01L29/785

摘要： A silicon containing fin is formed on a semiconductor substrate. A silicon oxide layer is formed around the bottom of the silicon containing fin. A gate dielectric is formed on the silicon containing fin followed by formation of a gate electrode. While protecting the portion of the semiconductor fin around the channel, a bottom portion of the silicon containing semiconductor fin is etched by a isotropic etch leaving a body strap between the channel of a finFET on the silicon containing fin and an underlying semiconductor layer underneath the silicon oxide layer. The fin may comprise a stack of inhomogeneous layers in which a bottom layer is etched selectively to a top semiconductor layer. Alternatively, the fin may comprise a homogeneous semiconductor material and the silicon containing fin may be protected by dielectric films on the sidewalls and top surfaces of the silicon containing fin.

摘要翻译： 在半导体衬底上形成含硅翅片。 在含硅翅片的底部周围形成氧化硅层。 在含硅鳍上形成栅电介质，形成栅电极。 在保护半导体翅片周围的通道的部分的同时，通过各向同性的蚀刻蚀刻含硅半导体鳍片的底部部分，从而在含硅鳍片上的finFET的通道和硅下方的下面的半导体层之间留下体带 氧化层。 翅片可以包括不均匀层的堆叠，其中底层被选择性地蚀刻到顶部半导体层。 或者，翅片可以包括均匀的半导体材料，并且含硅翅片可以由含硅翅片的侧壁和顶表面上的电介质膜保护。

公开(公告)号：US07361959B2

公开(公告)日：2008-04-22

申请号：US11164515

申请日：2005-11-28

申请人： Christopher D. Sheraw ,  Alyssa C. Bonnoit ,  K. Paul Muller ,  Werner Rausch

发明人： Christopher D. Sheraw ,  Alyssa C. Bonnoit ,  K. Paul Muller ,  Werner Rausch

IPC分类号： H01L29/76

CPC分类号： H01L27/0629 ,  H01L21/26506 ,  H01L28/20 ,  H01L28/40 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： The present invention relates to complementary metal-oxide-semiconductor (CMOS) circuits, as well as methods for forming such CMOS circuits. More specifically, the present invention relates to CMOS circuits that contain passive elements, such as buried resistors, capacitors, diodes, inductors, attenuators, power dividers, and antennas, etc., which are characterized by an end contact resistance of less than 90 ohm-microns. Such a low end resistance can be achieved either by reducing the spacer widths of the passive elements to a range of from about 10 nm to about 30 nm, or by masking the passive elements during a pre-amorphization implantation step, so that the passive elements are essentially free of pre-amorphization implants.

摘要翻译： 本发明涉及互补金属氧化物半导体（CMOS）电路，以及用于形成这种CMOS电路的方法。 更具体地说，本发明涉及包含诸如埋地电阻器，电容器，二极管，电感器，衰减器，功率分配器和天线等无源元件的CMOS电路，其特征在于端接触电阻小于90欧姆 微量元素 这样的低端电阻可以通过将无源元件的间隔物宽度减小到约10nm至约30nm的范围，或通过在预非晶化注入步骤期间掩蔽无源元件来实现，使得无源元件 基本上没有前非晶化植入物。

公开(公告)号：US20050054169A1

公开(公告)日：2005-03-10

申请号：US10605100

申请日：2003-09-09

申请人： Tina Wagner ,  Werner Rausch ,  Sadanand Deshpande

发明人： Tina Wagner ,  Werner Rausch ,  Sadanand Deshpande

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/331

CPC分类号： H01L29/66772 ,  H01L29/78618

摘要： A method is provided for forming an SOI MOSFET device with a silicon layer formed on a dielectric layer with a gate electrode stack, with sidewall spacers on sidewalls of the gate electrode stack and raised source/drain regions formed on the surface of the silicon layer. The gate electrode stack comprises a gate electrode formed of polysilicon over a gate dielectric layer formed on the surface of the silicon layer. A plug of dielectric material is formed in a notch in a cap layer above the gate polysilicon. The sidewalls of the gate electrode is covered by the sidewall spacers which cover a portion of the plug for the purpose of eliminating the exposure of the gate polysilicon so that formation of spurious epitaxial growth during the formation of raised source/drain regions is avoided.

摘要翻译： 提供了一种用于形成具有形成在具有栅极电极堆叠的电介质层上的硅层的SOI MOSFET器件的方法，在栅电极堆叠的侧壁上具有侧壁间隔物，并且形成在硅层的表面上的升高的源极/漏极区域。 栅极电极堆叠包括在形成于硅层的表面上的栅极电介质层上的多晶硅形成的栅电极。 在栅多晶硅上方的帽层中的凹口中形成介电材料塞。 为了消除栅极多晶硅的暴露，覆盖一部分插塞的侧壁间隔物覆盖栅电极的侧壁，从而避免在形成升高的源极/漏极区域期间形成假外延生长。

公开(公告)号：US5152849A

公开(公告)日：1992-10-06

申请号：US683106

申请日：1991-04-10

申请人： Klaus Bittner ,  Gerhard Muller ,  Werner Rausch ,  Klaus Wittel

发明人： Klaus Bittner ,  Gerhard Muller ,  Werner Rausch ,  Klaus Wittel

IPC分类号： C23C22/12 ,  C23C22/13 ,  C23C22/22 ,  C23C22/34 ,  C23C22/36

CPC分类号： C23C22/13 ,  C23C22/12 ,  C23C22/368

摘要： Disclosed is a process for phosphating a galvanized surface, particularly of galvanized steel wherein the surface is contacted for up to 10 seconds with a phosphating solution which contains accelerator, particularly nitrate,0.5 to 5.0 g/l zinc,3 to 20 g/l phosphate (calculated as P.sub.2 O.sub.5),0.3 to 3 g/l magnesiumat a weight ratio of magnesium: zinc=(0.5 to 10):1 and has an S value in the range from 0.2 to 0.4 preferably in the range from 0.2 to 0.3, and is replenished with a concentrate in which the weight ratio of zinc to phosphate (calculated as P.sub.2 O.sub.5) is in the range from (0 to 1):8.It is particularly desirable to use a phosphating solution which contains up to 1.5 g/l zinc, preferably 0.5 to 1 g/l zinc, at a weight ratio of magnesium: zinc of (0.5 to 3:1, nickel ions in an amount of up to 1.5 g/l, preferably in an amount of up to 0.5 g/l and simple or complex fluoride in an amount of up to 3 g/l, preferable 0.1 to 1.5 g/l (calculated as F in each case).A special advantage is afforded by the use of the process to treat galvanized steel strip which is subsequently painted or coated with a preformed organic film.

摘要翻译： 公开了一种使镀锌表面，特别是镀锌钢板磷化的方法，其中表面与含有促进剂，特别是硝酸盐的磷酸盐溶液接触达10秒钟，0.5-5.0g / l锌，3-20g / l磷酸盐 （以P 2 O 5计），0.3〜3g / l镁，镁：锌=（0.5〜10）：1的重量比，S值在0.2〜0.4的范围内，优选为0.2〜0.3， 补充浓缩物，其中锌与磷酸盐的重量比（以P2O5计算）在（0至1）：8的范围内。 特别希望使用含有1.5g / l以下锌，优选为0.5〜1g / l的锌，磷酸盐溶液，其重量比为：镁（0.5〜3:1），镍离子 最多为1.5g / l，优选为至多0.5g / l的量，并且最多为3g / l的简单或复合氟化物，优选为0.1至1.5g / l（以每种情况计算为F）。 通过使用该方法来处理随后涂覆或涂覆预成型有机膜的镀锌钢带提供了特别的优点。

公开(公告)号：US4559087A

公开(公告)日：1985-12-17

申请号：US600587

申请日：1984-04-17

申请人： Peter Jorns ,  Norbert Meyer ,  Werner Rausch ,  Josef Rothkegel ,  Gunther Luckhardt ,  Gudrun Volling

发明人： Peter Jorns ,  Norbert Meyer ,  Werner Rausch ,  Josef Rothkegel ,  Gunther Luckhardt ,  Gudrun Volling

IPC分类号： C23C22/73 ,  C23F7/10

CPC分类号： C23C22/73

摘要： In a process for phosphating composite metals containing steel and zinc surfaces using phosphating solutions based on zinc phosphate by the dipping process, in order to achieve satisfactory formation of the phosphate layer, the composite metals are subjected to preliminary dipping for a maximum of 30 seconds in a phosphating solution based on zinc phosphate in order to initiate the formation of the phosphate layer, and are then conveyed to the main dip-phosphating zone.It is advantageous to spray the composite metals with a phosphating solution based on zinc phosphate while they are being conveyed from the preliminary to the main dip-phosphating zone, and it is advisable to limit the duration of the conveying and thus of the spraying treatment to a maximum of 30 seconds.

摘要翻译： 在使用通过浸渍法的磷酸锌的磷化液对含有钢和锌的表面进行磷酸化的复合金属的方法中，为了达到令人满意的磷酸盐层的形成，复合金属经过预浸渍最多30秒钟 为了开始磷酸盐层的形成，以磷酸锌为基础的磷化液，然后被输送到主浸渍磷化区。 在将磷酸盐从磷酸盐初步输送到主浸渍磷酸盐区时，用磷酸盐磷酸盐溶液喷雾复合金属是有利的，并且建议将输送的持续时间和喷雾处理限制在 最多30秒。