公开(公告)号：US20080254635A1

公开(公告)日：2008-10-16

申请号：US12067569

申请日：2006-09-18

申请人： Hubert Benzel ,  Stefan Pinter ,  Christoph Schelling ,  Tjalf Pirk ,  Julian Gonska ,  Frank Klopf ,  Christina Leinenbach

发明人： Hubert Benzel ,  Stefan Pinter ,  Christoph Schelling ,  Tjalf Pirk ,  Julian Gonska ,  Frank Klopf ,  Christina Leinenbach

IPC分类号： H01L21/306

CPC分类号： H01L21/3065 ,  B81C1/00531 ,  B81C2201/0135 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/32135 ,  H01L21/78

摘要： A method for the plasma-free etching of silicon using the etching gas ClF3 or XeF2 and its use are provided. The silicon is provided having one or more areas to be etched as a layer on the substrate or as the substrate material itself. The silicon is converted into the mixed semiconductor SiGe by introducing germanium and is etched by supplying the etching gas ClF3 or XeF2. The introduction of germanium and the supply of the etching gas ClF3 or XeF2 may be performed at the same time or alternatingly. In particular, it is provided that the introduction of germanium be performed by implanting germanium ions in silicon.

摘要翻译： 提供了使用蚀刻气体ClF 3 X或XeF 2 2等离子体蚀刻硅的方法及其用途。 硅被提供有一个或多个要被蚀刻的区域作为衬底上的层或作为衬底材料本身。 通过引入锗将硅转换成混合半导体SiGe，并通过供给蚀刻气体ClF 3 X或XeF 2 2进行蚀刻。 可以同时或交替地进行锗的引入和蚀刻气体ClF 3 X或XeF 2 2的供给。 特别地，提供通过在锗中注入锗离子来进行锗的引入。

公开(公告)号：US20050133880A1

公开(公告)日：2005-06-23

申请号：US11016617

申请日：2004-12-17

申请人： Hubert Benzel ,  Stefan Finkbeiner ,  Christoph Schelling ,  Julian Gonska

发明人： Hubert Benzel ,  Stefan Finkbeiner ,  Christoph Schelling ,  Julian Gonska

IPC分类号： B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G02B26/00 ,  G02B26/08

CPC分类号： B81B7/0006 ,  G02B26/0833

摘要： A method for manufacturing a micromechanical component and a micromechanical component manufactured using this method are described, the micromechanical component having a first substrate, which in turn has at least one cavity and one printed conductor. At least a part of the printed conductor is applied to at least a part of the walls of the cavity. In particular, the floor of the cavity is considered part of the cavity walls.

摘要翻译： 描述了使用该方法制造微机械部件和微机械部件的方法，该微机械部件具有第一基板，该第一基板又具有至少一个空腔和一个印刷导体。 印刷导体的至少一部分被施加到空腔的至少一部分壁。 特别地，空腔的地板被认为是腔壁的一部分。

公开(公告)号：US07572660B2

公开(公告)日：2009-08-11

申请号：US11016617

申请日：2004-12-17

申请人： Hubert Benzel ,  Stefan Finkbeiner ,  Christoph Schelling ,  Julian Gonska

发明人： Hubert Benzel ,  Stefan Finkbeiner ,  Christoph Schelling ,  Julian Gonska

IPC分类号： H01L21/00

CPC分类号： B81B7/0006 ,  G02B26/0833

摘要： A method for manufacturing a micromechanical component and a micromechanical component manufactured using this method are described, the micromechanical component having a first substrate, which in turn has at least one cavity and one printed conductor. At least a part of the printed conductor is applied to at least a part of the walls of the cavity. In particular, the floor of the cavity is considered part of the cavity walls.

摘要翻译： 描述了使用该方法制造微机械部件和微机械部件的方法，该微机械部件具有第一基板，该第一基板又具有至少一个空腔和一个印刷导体。 印刷导体的至少一部分被施加到空腔的至少一部分壁。 特别地，空腔的地板被认为是腔壁的一部分。

公开(公告)号：US07026224B2

公开(公告)日：2006-04-11

申请号：US10954059

申请日：2004-09-29

申请人： Hubert Benzel ,  Julian Gonska

发明人： Hubert Benzel ,  Julian Gonska

IPC分类号： H01L21/46

CPC分类号： H01L21/78 ,  B81C1/00888 ,  H01L21/02002

摘要： A method for dicing semiconductor chips and a corresponding semiconductor chip system are described. The met-hod includes the steps: provision of a substrate having an upper substrate level, a middle substrate level and a lower substrate level; a plurality of empty spaces or porous areas being provided in the middle substrate level, the empty spaces or porous areas being enclosed by a substrate frame area; the empty spaces or porous areas being situated under a particular semiconductor chip area which is delimited by a semiconductor chip peripheral area in such a way that a particular substrate frame area is distanced from a vertical extension of the particular corresponding semiconductor peripheral area by a lateral intermediate space. In the case of the empty spaces, at least one substrate support element is provided to bond the lower substrate level to a particular semiconductor chip area in the upper substrate level. A lateral separation of the semiconductor chip areas is produced by severing the upper substrate level above the particular intermediate space along the particular semiconductor chip peripheral area. The semiconductor chip areas are diced into semiconductor chips by severing the particular substrate support elements.

摘要翻译： 对半导体芯片的切割方法和对应的半导体芯片系统进行说明。 熔池包括以下步骤：提供具有上基板级，中基板级和下基板级的基板; 多个空的空间或多孔区域设置在中间基板层中，空的空间或多孔区域被基板框架区域包围; 空的空间或多孔区域位于由半导体芯片周边区域限定的特定半导体芯片区域的下方，使得特定的衬底框架区域与特定对应的半导体外围区域的垂直延伸部分相隔一个侧向中间体 空间。 在空白空间的情况下，提供至少一个基板支撑元件以将下基板水平结合到上基板水平面中的特定半导体芯片区域。 半导体芯片区域的横向分离是通过沿着特定的半导体芯片外围区域切断特定中间空间上方的上基板级而产生的。 通过切断特定的基板支撑元件将半导体芯片区域切割成半导体芯片。

公开(公告)号：US20050087843A1

公开(公告)日：2005-04-28

申请号：US10954059

申请日：2004-09-29

申请人： Hubert Benzel ,  Julian Gonska

发明人： Hubert Benzel ,  Julian Gonska

IPC分类号： B81C1/00 ,  H01L21/78 ,  H01L23/544

CPC分类号： H01L21/78 ,  B81C1/00888 ,  H01L21/02002

摘要： A method for dicing semiconductor chips and a corresponding semiconductor chip system are described. The met-hod includes the steps: provision of a substrate having an upper substrate level, a middle substrate level and a lower substrate level; a plurality of empty spaces or porous areas being provided in the middle substrate level, the empty spaces or porous areas being enclosed by a substrate frame area; the empty spaces or porous areas being situated under a particular semiconductor chip area which is delimited by a semiconductor chip peripheral area in such a way that a particular substrate frame area is distanced from a vertical extension of the particular corresponding semiconductor peripheral area by a lateral intermediate space. In the case of the empty spaces, at least one substrate support element is provided to bond the lower substrate level to a particular semiconductor chip area in the upper substrate level. A lateral separation of the semiconductor chip areas is produced by severing the upper substrate level above the particular intermediate space along the particular semiconductor chip peripheral area. The semiconductor chip areas are diced into semiconductor chips by severing the particular substrate support elements.

摘要翻译： 对半导体芯片的切割方法和对应的半导体芯片系统进行说明。 熔池包括以下步骤：提供具有上基板级，中基板级和下基板级的基板; 多个空的空间或多孔区域设置在中间基板层中，空的空间或多孔区域被基板框架区域包围; 空的空间或多孔区域位于由半导体芯片周边区域限定的特定半导体芯片区域的下方，使得特定的衬底框架区域与特定对应的半导体外围区域的垂直延伸部分相隔一个侧向中间体 空间。 在空白空间的情况下，提供至少一个基板支撑元件以将下基板水平结合到上基板水平面中的特定半导体芯片区域。 半导体芯片区域的横向分离是通过沿着特定的半导体芯片外围区域切断特定中间空间上方的上基板级而产生的。 通过切断特定的基板支撑元件将半导体芯片区域切割成半导体芯片。

公开(公告)号：US20130285175A1

公开(公告)日：2013-10-31

申请号：US13869756

申请日：2013-04-24

申请人： Julian Gonska ,  Jens Frey ,  Herlbert Weber ,  Timo Schary ,  Thomas Mayer

发明人： Julian Gonska ,  Jens Frey ,  Herlbert Weber ,  Timo Schary ,  Thomas Mayer

IPC分类号： B81B7/00 ,  B81C1/00

CPC分类号： B81B7/007 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2203/0109 ,  B81C2203/019 ,  B81C2203/035

摘要： A micromechanical component, in particular a micromechanical sensor having a carrier substrate and having a cap substrate, and a manufacturing method are provided. The carrier substrate and the cap substrate are joined together with the aid of a eutectic bond connection or by a metallic solder connection or a glass solder connection (e.g., glass frit), in an edge area of the carrier substrate and the cap substrate. The connection of the carrier substrate and the cap substrate is established with the aid of connecting areas, and a stop trench or a stop protrusion or both a stop trench and a stop protrusion are situated within the edge areas in the bordering areas.

摘要翻译： 提供了微机械部件，特别是具有载体基板并具有盖基板的微机械传感器以及制造方法。 借助于共晶接合连接或通过金属焊接连接或玻璃焊料连接（例如，玻璃料）在载体基板和盖基板的边缘区域中将载体基板和盖基板接合在一起。 借助于连接区域建立载体衬底和盖衬底的连接，并且止动沟槽或止动突起或止动沟槽和止动突起两者位于边界区域中的边缘区域内。

公开(公告)号：US08035209B2

公开(公告)日：2011-10-11

申请号：US12535243

申请日：2009-08-04

申请人： Julian Gonska ,  Ralf Hausner

发明人： Julian Gonska ,  Ralf Hausner

IPC分类号： H01L23/31 ,  H01L23/02 ,  H01L23/04

CPC分类号： B81B7/02 ,  B81B2201/0235 ,  B81B2201/025 ,  B81C1/00293 ,  B81C2203/0136 ,  B81C2203/0145 ,  Y10T428/24744

摘要： A micromechanical device having a substrate wafer has at least one first cavity and one second cavity, the cavities being hermetically separated from each other, the first cavity having a different internal atmospheric pressure than the second cavity. The cavities are capped by a thin film cap. A method is for manufacturing a micromechanical device which has a thin film cap having cavities of different internal atmospheric pressures.

摘要翻译： 具有衬底晶片的微机械装置具有至少一个第一空腔和一个第二空腔，空腔彼此气密地分离，第一空腔具有与第二空腔不同的内部大气压力。 空腔被薄膜帽盖住。 一种用于制造具有具有不同内部大气压力的空腔的薄膜盖的微机械装置的方法。

公开(公告)号：US20050204821A1

公开(公告)日：2005-09-22

申请号：US11072859

申请日：2005-03-03

申请人： Frank Fischer ,  Hans Artmann ,  Lars Metzger ,  Arnim Hoechst ,  Julian Gonska

发明人： Frank Fischer ,  Hans Artmann ,  Lars Metzger ,  Arnim Hoechst ,  Julian Gonska

IPC分类号： G01L9/00 ,  B81B3/00 ,  B81C1/00 ,  G01J1/02 ,  G01L7/08 ,  H01L29/84

CPC分类号： B81B7/0029 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C2201/0109

摘要： A micromechanical component having a diaphragm is provided, the structure of which effectively prevents the penetration of dirt particles into the cavity. A method for manufacturing such a component is also provided. The structure of the component is implemented in a layer structure which includes at least one first sacrificial layer and a layer system over the first sacrificial layer. A cavity is formed in the first sacrificial layer underneath the diaphragm. In the region of the diaphragm between the upper layer and the lower layer of the layer system situated directly above the first sacrificial layer, at least one access channel to the cavity is formed which has at least one opening in the upper layer and at least one opening in the lower layer, the opening in the upper layer and the opening in the lower layer being offset with respect to each other.

摘要翻译： 提供了具有隔膜的微机械部件，其结构有效地防止了灰尘颗粒进入空腔。 还提供了制造这种部件的方法。 组件的结构以包括至少一个第一牺牲层和第一牺牲层上的层系统的层结构来实现。 在隔膜下方的第一牺牲层中形成空腔。 在位于第一牺牲层正上方的层系统的上层和下层之间的隔膜区域中，形成至少一个到空腔的通道，其在上层中具有至少一个开口，并且至少一个开口 在下层中开口，上层中的开口和下层中的开口相对于彼此偏移。

公开(公告)号：US09123716B2

公开(公告)日：2015-09-01

申请号：US13719799

申请日：2012-12-19

申请人： Julian Gonska ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

发明人： Julian Gonska ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

IPC分类号： H01L21/00 ,  H01L23/48 ,  H01L21/50 ,  H01L23/488 ,  H01L21/18 ,  B81C1/00 ,  H01L23/00

CPC分类号： H01L21/50 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/185 ,  H01L21/187 ,  H01L23/488 ,  H01L24/94 ,  H01L2224/83805 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/16251 ,  H01L2924/01013 ,  H01L2924/01032 ,  H01L2924/00

摘要： A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.

摘要翻译： 一种用于接合两个硅衬底和两个硅衬底的对应系统的方法。 该方法包括：提供第一和第二硅衬底; 在第一硅衬底的第一接合表面上沉积具有0.1至5％铜含量的纯铝或铝 - 铜的第一接合层; 在所述第一接合表面上方或第二硅衬底的第二接合表面上方沉积锗的第二接合层; 随后接合第一和第二硅衬底，使得第一和第二接合表面彼此相对; 并且在第一硅衬底和第二硅衬底之间实现热处理步骤以形成铝锗或含有铝 - 锗的共晶结合层作为主要组分，最小含有铝并延伸到第一硅中的尖峰 衬底，至少形成在第一结合表面上。

公开(公告)号：US20100028618A1

公开(公告)日：2010-02-04

申请号：US12535243

申请日：2009-08-04

申请人： Julian Gonska ,  Ralf Hausner

发明人： Julian Gonska ,  Ralf Hausner

IPC分类号： B32B3/20 ,  B44C1/22

CPC分类号： B81B7/02 ,  B81B2201/0235 ,  B81B2201/025 ,  B81C1/00293 ,  B81C2203/0136 ,  B81C2203/0145 ,  Y10T428/24744

摘要： A micromechanical device having a substrate wafer has at least one first cavity and one second cavity, the cavities being hermetically separated from each other, the first cavity having a different internal atmospheric pressure than the second cavity. The cavities are capped by a thin film cap. A method is for manufacturing a micromechanical device which has a thin film cap having cavities of different internal atmospheric pressures.

摘要翻译： 具有衬底晶片的微机械装置具有至少一个第一空腔和一个第二空腔，空腔彼此气密地分离，第一空腔具有与第二空腔不同的内部大气压力。 空腔被薄膜帽盖住。 一种用于制造具有具有不同内部大气压力的空腔的薄膜盖的微机械装置的方法。