公开(公告)号：US08994023B2

公开(公告)日：2015-03-31

申请号：US13115088

申请日：2011-05-24

申请人： Hye-Young Ryu ,  Woo-Geun Lee ,  Young-Joo Choi ,  Kyoung-Jae Chung ,  Jin-Won Lee ,  Seung-Ha Choi ,  Hee-Jun Byeon ,  Pil-Sang Yun

发明人： Hye-Young Ryu ,  Woo-Geun Lee ,  Young-Joo Choi ,  Kyoung-Jae Chung ,  Jin-Won Lee ,  Seung-Ha Choi ,  Hee-Jun Byeon ,  Pil-Sang Yun

IPC分类号： H01L47/00 ,  H01L29/10 ,  H01L29/04 ,  H01L29/15 ,  H01L27/12

CPC分类号： H01L27/1214 ,  H01L27/1225 ,  H01L27/1255

摘要： A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin film transistor array substrate may include an insulating substrate on which a gate electrode is formed, a gate insulating film formed on the insulating substrate, an oxide semiconductor pattern disposed on the gate insulating film, an anti-etching pattern formed on the oxide semiconductor pattern, and a source electrode and a drain electrode formed on the anti-etching pattern. The oxide semiconductor pattern may include an edge portion positioned between the source electrode and the drain electrode, and the edge portion may include at least one conductive region and at least one non-conductive region.

摘要翻译： 提供了能够降低由于氧化物半导体图案的劣化引起的器件劣化的薄膜晶体管阵列基板及其制造方法。 薄膜晶体管阵列基板可以包括其上形成有栅极的绝缘基板，形成在绝缘基板上的栅极绝缘膜，设置在栅极绝缘膜上的氧化物半导体图案，形成在氧化物半导体上的抗蚀刻图案 图案，以及形成在防蚀刻图案上的源电极和漏电极。 氧化物半导体图案可以包括位于源电极和漏电极之间的边缘部分，并且边缘部分可以包括至少一个导电区域和至少一个非导电区域。

公开(公告)号：US08723179B2

公开(公告)日：2014-05-13

申请号：US12957743

申请日：2010-12-01

申请人： Pil-Sang Yun ,  Ki-Won Kim ,  Hye-Young Ryu ,  Woo-Geun Lee ,  Seung-Ha Choi ,  Jae-Hyoung Youn ,  Kyoung-Jae Chung ,  Young-Wook Lee ,  Je-Hun Lee ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Dong-Ju Yang ,  Young-Joo Choi

发明人： Pil-Sang Yun ,  Ki-Won Kim ,  Hye-Young Ryu ,  Woo-Geun Lee ,  Seung-Ha Choi ,  Jae-Hyoung Youn ,  Kyoung-Jae Chung ,  Young-Wook Lee ,  Je-Hun Lee ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Dong-Ju Yang ,  Young-Joo Choi

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

摘要翻译： 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。

公开(公告)号：US08598583B2

公开(公告)日：2013-12-03

申请号：US13092882

申请日：2011-04-22

申请人： Hye-Young Ryu ,  Jin-Won Lee ,  Woo-Geun Lee ,  Hee-Jun Byeon ,  Xun Zhu

发明人： Hye-Young Ryu ,  Jin-Won Lee ,  Woo-Geun Lee ,  Hee-Jun Byeon ,  Xun Zhu

IPC分类号： H01L29/786

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3272 ,  H01L51/5253 ,  H01L2227/323

摘要： A thin film transistor panel includes a substrate, a light blocking layer on the substrate, a first protective film on the light blocking layer, a first electrode and a second electrode on the first protective film, an oxide semiconductor layer on a portion of the first protective film exposed between the first electrode and the second electrode, an insulating layer, a third electrode overlapping with the oxide semiconductor layer and on the insulating layer, and a fourth electrode on the insulating layer. The light blocking layer includes first sidewalls, and the first protective film includes second sidewalls. The first and the second sidewalls are disposed along substantially the same line.

公开(公告)号：US08216865B2

公开(公告)日：2012-07-10

申请号：US12772836

申请日：2010-05-03

申请人： Young-Joo Choi ,  Woo-Geun Lee ,  Hye-Young Ryu ,  Ki-Won Kim

发明人： Young-Joo Choi ,  Woo-Geun Lee ,  Hye-Young Ryu ,  Ki-Won Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  H01L21/32134 ,  H01L21/465 ,  H01L27/1225

摘要： A display device includes a gate pattern, a semiconductor pattern, a source pattern and a pixel electrode are provided. The gate pattern is formed on a base substrate and includes a gate line and a gate electrode. The semiconductor pattern is formed on the base substrate having the gate pattern and includes an oxide semiconductor. The source pattern is formed from a data metal layer and formed on the base substrate having the semiconductor pattern, and includes a data line, a source electrode and a drain electrode. The data metal layer includes a first copper alloy layer, and a lower surface of the data metal layer substantially coincides with an upper surface of the semiconductor pattern. The pixel electrode is formed on the base substrate having the source pattern and electrically connected to the drain electrode. Thus, manufacturing processes may be simplified, and reliability may be improved.

摘要翻译： 显示装置包括栅极图案，半导体图案，源图案和像素电极。 栅极图案形成在基底基板上，并且包括栅极线和栅电极。 半导体图案形成在具有栅极图案的基底基板上，并且包括氧化物半导体。 源图案由数据金属层形成并形成在具有半导体图案的基底基板上，并且包括数据线，源电极和漏电极。 数据金属层包括第一铜合金层，数据金属层的下表面基本上与半导体图案的上表面重合。 像素电极形成在具有源极图案的基底基板上并与漏电极电连接。 因此，可以简化制造工艺，并且可以提高可靠性。

公开(公告)号：US08598577B2

公开(公告)日：2013-12-03

申请号：US13177783

申请日：2011-07-07

申请人： Jae-Woo Park ,  Dong-Hoon Lee ,  Sung-Haeng Cho ,  Woo-Geun Lee ,  Hye-Young Ryu ,  Young-Joo Choi

发明人： Jae-Woo Park ,  Dong-Hoon Lee ,  Sung-Haeng Cho ,  Woo-Geun Lee ,  Hye-Young Ryu ,  Young-Joo Choi

IPC分类号： H01L29/786

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/458

摘要： A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.

摘要翻译： 显示基板包括在基底基板上沿第一方向延伸的栅极线，在基底基板上的数据线，并且沿与第一方向交叉的第二方向延伸，栅极线上的栅极绝缘层，薄膜晶体管和 像素电极。 薄膜晶体管包括栅电极，电极连接栅极线，氧化物半导体图案以及氧化物半导体图案上的源电极和漏电极并彼此间隔开。 氧化物半导体图案包括包括氧化铟的第一半导体图案和包含无铟氧化物的第二半导体图案。 像素电极与漏电极电连接。

公开(公告)号：US20110079776A1

公开(公告)日：2011-04-07

申请号：US12772836

申请日：2010-05-03

申请人： Young-Joo Choi ,  Woo-Geun Lee ,  Hye-Young Ryu ,  Ki-Won Kim

发明人： Young-Joo Choi ,  Woo-Geun Lee ,  Hye-Young Ryu ,  Ki-Won Kim

IPC分类号： H01L33/26

CPC分类号： H01L27/124 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  H01L21/32134 ,  H01L21/465 ,  H01L27/1225

摘要： A display device includes a gate pattern, a semiconductor pattern, a source pattern and a pixel electrode are provided. The gate pattern is formed on a base substrate and includes a gate line and a gate electrode. The semiconductor pattern is formed on the base substrate having the gate pattern and includes an oxide semiconductor. The source pattern is formed from a data metal layer and formed on the base substrate having the semiconductor pattern, and includes a data line, a source electrode and a drain electrode. The data metal layer includes a first copper alloy layer, and a lower surface of the data metal layer substantially coincides with an upper surface of the semiconductor pattern. The pixel electrode is formed on the base substrate having the source pattern and electrically connected to the drain electrode. Thus, manufacturing processes may be simplified, and reliability may be improved.

摘要翻译： 显示装置包括栅极图案，半导体图案，源图案和像素电极。 栅极图案形成在基底基板上，并且包括栅极线和栅电极。 半导体图案形成在具有栅极图案的基底基板上，并且包括氧化物半导体。 源图案由数据金属层形成并形成在具有半导体图案的基底基板上，并且包括数据线，源电极和漏电极。 数据金属层包括第一铜合金层，数据金属层的下表面基本上与半导体图案的上表面重合。 像素电极形成在具有源极图案的基底基板上并与漏电极电连接。 因此，可以简化制造工艺，并且可以提高可靠性。

公开(公告)号：US20110297930A1

公开(公告)日：2011-12-08

申请号：US13151102

申请日：2011-06-01

申请人： Seung-Ha CHOI ,  Kyoung-Jae Chung ,  Woo-Geun Lee

发明人： Seung-Ha CHOI ,  Kyoung-Jae Chung ,  Woo-Geun Lee

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L21/76804 ,  G02F1/133345 ,  G02F1/136227 ,  G02F1/136286 ,  H01L21/76816 ,  H01L27/1225 ,  H01L27/1244 ,  H01L27/1248 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： A TFT display panel having a high charge mobility and making it possible to obtain uniform electric characteristics with respect to a large-area display is provided as well as a manufacturing method thereof. A TFT display panel includes a gate electrode formed on an insulation substrate, a first gate insulting layer formed of SiNx on the gate electrode, a second gate insulting layer formed of SiOx on the first gate insulting layer, an oxide semiconductor layer formed to overlap the gate electrode and having a channel part, and a passivation layer formed of SiOx on the oxide semiconductor layer and the gate electrode, and the passivation layer includes a contact hole exposing the drain electrode. The contact hole has a shape in which the passivation layer of a portion directly exposed together with a metal occupies an area smaller than the upper passivation layer.

摘要翻译： 提供具有高电荷迁移率并且可以获得相对于大面积显示器的均匀电特性的TFT显示面板及其制造方法。 TFT显示面板包括形成在绝缘基板上的栅极电极，栅极上由SiNx形成的第一栅极绝缘层，在第一栅极绝缘层上由SiOx形成的第二栅极绝缘层，形成为与栅极电极重叠的氧化物半导体层 栅电极，并具有通道部分，以及由氧化物半导体层和栅电极上的SiO x形成的钝化层，并且钝化层包括暴露漏电极的接触孔。 接触孔具有直接与金属一起暴露的部分的钝化层占据比上钝化层小的形状。

公开(公告)号：US09184090B2

公开(公告)日：2015-11-10

申请号：US13151102

申请日：2011-06-01

申请人： Seung-Ha Choi ,  Kyoung-Jae Chung ,  Woo-Geun Lee

发明人： Seung-Ha Choi ,  Kyoung-Jae Chung ,  Woo-Geun Lee

IPC分类号： H01L21/00 ,  H01L21/768 ,  G02F1/1333 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L21/76804 ,  G02F1/133345 ,  G02F1/136227 ,  G02F1/136286 ,  H01L21/76816 ,  H01L27/1225 ,  H01L27/1244 ,  H01L27/1248 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： A TFT display panel having a high charge mobility and making it possible to obtain uniform electric characteristics with respect to a large-area display is provided as well as a manufacturing method thereof. A TFT display panel includes a gate electrode formed on an insulation substrate, a first gate insulting layer formed of SiNx on the gate electrode, a second gate insulting layer formed of SiOx on the first gate insulting layer, an oxide semiconductor layer formed to overlap the gate electrode and having a channel part, and a passivation layer formed of SiOx on the oxide semiconductor layer and the gate electrode, and the passivation layer includes a contact hole exposing the drain electrode. The contact hole has a shape in which the passivation layer of a portion directly exposed together with a metal occupies an area smaller than the upper passivation layer.

摘要翻译： 提供具有高电荷迁移率并且可以获得相对于大面积显示器的均匀电特性的TFT显示面板及其制造方法。 TFT显示面板包括形成在绝缘基板上的栅极电极，栅极上由SiNx形成的第一栅极绝缘层，在第一栅极绝缘层上由SiOx形成的第二栅极绝缘层，形成为与栅极电极重叠的氧化物半导体层 栅电极，并具有通道部分，以及由氧化物半导体层和栅电极上的SiO x形成的钝化层，钝化层包括暴露漏电极的接触孔。 接触孔具有直接与金属一起暴露的部分的钝化层占据比上钝化层小的形状。

公开(公告)号：US20120113346A1

公开(公告)日：2012-05-10

申请号：US13277114

申请日：2011-10-19

申请人： Seung-Ha CHOI ,  Kyoung-Jae Chung ,  Woo-Geun Lee

发明人： Seung-Ha CHOI ,  Kyoung-Jae Chung ,  Woo-Geun Lee

IPC分类号： G02F1/136 ,  H01L33/08

CPC分类号： H01L21/3086 ,  G02F1/136227 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： Provided are a display substrate, a display device, and a method of manufacturing the display substrate. The display substrate includes: a substrate in which a pixel region is defined; a gate electrode and a gate pad are formed on the substrate; a gate insulating layer formed on the gate electrode and the gate pad; a buffer layer pattern overlaps the gate electrode and is formed on the gate insulating layer; an insulating film pattern formed on the buffer layer pattern; an oxide semiconductor pattern formed on the insulating film pattern; a source electrode formed on the oxide semiconductor pattern; and a drain electrode formed on the oxide semiconductor pattern and is separated from the source electrode.

摘要翻译： 提供了显示基板，显示装置和制造显示基板的方法。 显示基板包括：限定像素区域的基板; 在基板上形成栅电极和栅极焊盘; 形成在栅极电极和栅极焊盘上的栅极绝缘层; 缓冲层图案与栅电极重叠并形成在栅极绝缘层上; 形成在缓冲层图案上的绝缘膜图案; 形成在所述绝缘膜图案上的氧化物半导体图案; 形成在所述氧化物半导体图案上的源电极; 以及形成在氧化物半导体图案上并与源电极分离的漏电极。

公开(公告)号：US08836877B2

公开(公告)日：2014-09-16

申请号：US13277114

申请日：2011-10-19

申请人： Seung-Ha Choi ,  Kyoung-Jae Chung ,  Woo-Geun Lee

发明人： Seung-Ha Choi ,  Kyoung-Jae Chung ,  Woo-Geun Lee

IPC分类号： G02F1/136 ,  H01L29/786 ,  G02F1/1362 ,  H01L29/66 ,  H01L29/49 ,  H01L27/12

CPC分类号： H01L21/3086 ,  G02F1/136227 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： Provided are a display substrate, a display device, and a method of manufacturing the display substrate. The display substrate includes: a substrate in which a pixel region is defined; a gate electrode and a gate pad are formed on the substrate; a gate insulating layer formed on the gate electrode and the gate pad; a buffer layer pattern overlaps the gate electrode and is formed on the gate insulating layer; an insulating film pattern formed on the buffer layer pattern; an oxide semiconductor pattern formed on the insulating film pattern; a source electrode formed on the oxide semiconductor pattern; and a drain electrode formed on the oxide semiconductor pattern and is separated from the source electrode.

摘要翻译： 提供了显示基板，显示装置和制造显示基板的方法。 显示基板包括：限定像素区域的基板; 在基板上形成栅电极和栅极焊盘; 形成在栅极电极和栅极焊盘上的栅极绝缘层; 缓冲层图案与栅电极重叠并形成在栅极绝缘层上; 形成在缓冲层图案上的绝缘膜图案; 形成在所述绝缘膜图案上的氧化物半导体图案; 形成在所述氧化物半导体图案上的源电极; 以及形成在氧化物半导体图案上并与源电极分离的漏电极。