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    Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layers
    7.
    发明授权
    Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layers 失效
    制造具有电荷捕获层的单元电池的半导体存储器件的方法

    公开(公告)号：US07498217B2

    公开(公告)日：2009-03-03

    申请号：US11746761

    申请日：2007-05-10

    申请人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Woo-Gwan Shim ,  Jong-Won Lee

    发明人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Woo-Gwan Shim ,  Jong-Won Lee

    IPC分类号： H01L21/8238 ,  H01L21/8242 ,  H01L21/336

    CPC分类号： H01L27/115 ,  H01L21/76229 ,  H01L27/11568

    摘要： In a method of manufacturing a semiconductor device such as a SONOS type semiconductor device, a trench is formed on a substrate. An isolation layer protruding from the substrate is formed to fill the trench. After a first layer is formed on the substrate, a preliminary second layer pattern is formed on the first layer. The preliminary second layer pattern has an upper face substantially lower than or substantially equal to an upper face of the isolation layer. A third layer is formed on the preliminary second layer and the isolation layer. A fourth layer is formed on the third layer. The fourth layer, the third layer, the preliminary second layer pattern and the first layer are partially etched to form a gate structure on the substrate. Source/drain regions are formed at portions of the substrate adjacent to the gate structure.

    摘要翻译： 在制造诸如SONOS型半导体器件的半导体器件的方法中，在衬底上形成沟槽。 形成从衬底突出的隔离层以填充沟槽。 在基板上形成第一层之后，在第一层上形成预备的第二层图案。 预备的第二层图案具有基本上低于或基本上等于隔离层的上表面的上表面。 在初步第二层和隔离层上形成第三层。 在第三层上形成第四层。 部分蚀刻第四层，第三层，初步第二层图案和第一层，以在基板上形成栅极结构。 源极/漏极区域形成在与栅极结构相邻的衬底的部分处。

    Method of forming a spacer
    8.
    发明授权
    Method of forming a spacer 有权
    形成间隔物的方法

    公开(公告)号：US07825030B2

    公开(公告)日：2010-11-02

    申请号：US12277332

    申请日：2008-11-25

    申请人： Yu-Kyung Kim ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Chang-Ki Hong

    发明人： Yu-Kyung Kim ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Chang-Ki Hong

    IPC分类号： H01L21/311

    CPC分类号： H01L21/31144 ,  H01L21/30617 ,  H01L21/31111 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76897 ,  H01L29/6653

    摘要： A sacrificial layer and wet etch are used to form a sidewall spacer so as to prevent damage to the structure on which the spacer is formed and to the underlying substrate as well. Once the structure is formed on the substrate a spacer formation layer is formed to cover the structure, and a sacrificial layer is formed on the spacer formation layer. The sacrificial layer is wet etched to form a sacrificial layer pattern on that portion of the spacer formation layer extending along a sidewall of the structure. The spacer is formed on the sidewall of the structure by wet etching the spacer formation layer using the sacrificial layer pattern as a mask.

    摘要翻译： 使用牺牲层和湿蚀刻来形成侧壁间隔物，以便防止对形成间隔物的结构和下面的衬底造成损坏。 一旦在衬底上形成结构，形成间隔物形成层以覆盖该结构，并且在间隔物形成层上形成牺牲层。 对牺牲层进行湿式蚀刻以在沿着结构的侧壁延伸的间隔物形成层的该部分上形成牺牲层图案。 通过使用牺牲层图案作为掩模湿蚀刻间隔物形成层，在该结构的侧壁上形成间隔物。

    METHOD OF FORMING A SPACER
    10.
    发明申请
    METHOD OF FORMING A SPACER 有权
    形成间隔物的方法

    公开(公告)号：US20090137126A1

    公开(公告)日：2009-05-28

    申请号：US12277332

    申请日：2008-11-25

    申请人： Yu-Kyung Kim ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Chang-Ki Hong

    发明人： Yu-Kyung Kim ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Chang-Ki Hong

    IPC分类号： H01L21/311

    CPC分类号： H01L21/31144 ,  H01L21/30617 ,  H01L21/31111 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76897 ,  H01L29/6653

    摘要： A sacrificial layer and wet etch are used to form a sidewall spacer so as to prevent damage to the structure on which the spacer is formed and to the underlying substrate as well. Once the structure is formed on the substrate a spacer formation layer is formed to cover the structure, and a sacrificial layer is formed on the spacer formation layer. The sacrificial layer is wet etched to form a sacrificial layer pattern on that portion of the spacer formation layer extending along a sidewall of the structure. The spacer is formed on the sidewall of the structure by wet etching the spacer formation layer using the sacrificial layer pattern as a mask.

    摘要翻译： 使用牺牲层和湿蚀刻来形成侧壁间隔物，以便防止对形成间隔物的结构和下面的衬底造成损坏。 一旦在衬底上形成结构，形成间隔物形成层以覆盖该结构，并且在间隔物形成层上形成牺牲层。 对牺牲层进行湿蚀刻以在沿着结构的侧壁延伸的间隔物形成层的该部分上形成牺牲层图案。 通过使用牺牲层图案作为掩模湿蚀刻间隔物形成层，在该结构的侧壁上形成间隔物。