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1.发明授权公开(公告)号：US08648376B2
公开(公告)日：2014-02-11
申请号：US13612343
申请日：2012-09-12
申请人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
发明人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
摘要翻译： 公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。 发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。
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2.发明申请公开(公告)号：US20110297993A1
公开(公告)日：2011-12-08
申请号：US13214871
申请日：2011-08-22
申请人： Hyun Kyong CHO , Sun Kyung Kim , Jun Ho Jang
发明人： Hyun Kyong CHO , Sun Kyung Kim , Jun Ho Jang
IPC分类号： H01L33/40
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
摘要翻译： 公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。 发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。
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3.发明授权公开(公告)号：US08283690B2
公开(公告)日：2012-10-09
申请号：US13214871
申请日：2011-08-22
申请人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
发明人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
摘要翻译： 公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。 发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。
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4.发明申请公开(公告)号：US20130001625A1
公开(公告)日：2013-01-03
申请号：US13612343
申请日：2012-09-12
申请人： Hyun Kyong CHO , Sun Kyung Kim , Jun Ho Jang
发明人： Hyun Kyong CHO , Sun Kyung Kim , Jun Ho Jang
IPC分类号： H01L33/60
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
摘要翻译： 公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。 发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。
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5.发明授权公开(公告)号：US07652295B2
公开(公告)日：2010-01-26
申请号：US11797727
申请日：2007-05-07
申请人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
发明人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/22 , H01L29/227 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
摘要翻译： 公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。 发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。
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6.发明授权公开(公告)号：US08008103B2
公开(公告)日：2011-08-30
申请号：US12637653
申请日：2009-12-14
申请人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
发明人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
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公开(公告)号：US08003993B2
公开(公告)日：2011-08-23
申请号：US12637637
申请日：2009-12-14
申请人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
发明人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/22 , H01L29/227 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
摘要翻译： 公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。 发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。
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8.发明授权公开(公告)号：US07939840B2
公开(公告)日：2011-05-10
申请号：US12637661
申请日：2009-12-14
申请人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
发明人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/22
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
摘要翻译： 公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。 发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。
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9.发明授权公开(公告)号：US07893451B2
公开(公告)日：2011-02-22
申请号：US12637646
申请日：2009-12-14
申请人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
发明人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0033 , H01L2933/0083 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
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公开(公告)号：US20080128720A1
公开(公告)日：2008-06-05
申请号：US11998411
申请日：2007-11-30
申请人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang , Yong Hee Lee
发明人： Hyun Kyong Cho , Sun Kyung Kim , Jun Ho Jang , Yong Hee Lee
IPC分类号： H01L33/00
摘要： A light emitting device is closed. More particularly, a light emitting device capable improving light-extraction efficiency is disclosed. The light emitting device includes a plurality of layers including a reflector layer. The reflector layer has the maximum reflectivity at an incidence angle more than zero degrees and less than an angle θ. The angle θ is represented by the equation θ=Sin−1[n2/n1] (where, n1 is the maximum refractive index of the plurality of layers constituting the light emitting device, and n2 is the refractive index of an external background material).
摘要翻译： 发光装置关闭。 更具体地，公开了一种能够提高光提取效率的发光器件。 发光器件包括多个包括反射层的层。 反射层在入射角大于零度且小于角度θ时具有最大反射率。 角度θ由等式θ= sin＆lt; 1＆gt; [n 2 / n 1]（其中，n 1 < / SUB>是构成发光器件的多个层的最大折射率，n 2是外部背景材料的折射率）。
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