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    Light emitting device
    1.
    发明申请
    Light emitting device 审中-公开
    发光装置

    公开(公告)号：US20080128720A1

    公开(公告)日：2008-06-05

    申请号：US11998411

    申请日：2007-11-30

    申请人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Jun Ho Jang ,  Yong Hee Lee

    发明人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Jun Ho Jang ,  Yong Hee Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L33/10 ,  H01L33/30

    摘要： A light emitting device is closed. More particularly, a light emitting device capable improving light-extraction efficiency is disclosed. The light emitting device includes a plurality of layers including a reflector layer. The reflector layer has the maximum reflectivity at an incidence angle more than zero degrees and less than an angle θ. The angle θ is represented by the equation θ=Sin−1[n2/n1] (where, n1 is the maximum refractive index of the plurality of layers constituting the light emitting device, and n2 is the refractive index of an external background material).

    摘要翻译： 发光装置关闭。 更具体地，公开了一种能够提高光提取效率的发光器件。 发光器件包括多个包括反射层的层。 反射层在入射角大于零度且小于角度θ时具有最大反射率。 角度θ由等式θ= sin＆lt; 1＆gt; [n 2 / n 1]（其中，n 1 < / SUB>是构成发光器件的多个层的最大折射率，n 2是外部背景材料的折射率）。

    LED having vertical structure and method for fabricating the same
    10.
    发明授权
    LED having vertical structure and method for fabricating the same 有权
    具有垂直结构的LED及其制造方法

    公开(公告)号：US08202753B2

    公开(公告)日：2012-06-19

    申请号：US12877652

    申请日：2010-09-08

    申请人： Jong Wook Kim ,  Jae Wan Choi ,  Hyun Kyong Cho ,  Jong Ho Na ,  Jun Ho Jang

    发明人： Jong Wook Kim ,  Jae Wan Choi ,  Hyun Kyong Cho ,  Jong Ho Na ,  Jun Ho Jang

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/20

    摘要： A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layers, and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.

    摘要翻译： 具有垂直结构的发光二极管（LED）及其制造方法。 具有垂直结构的发光二极管（LED）包括支撑层; 形成在所述支撑层上的第一电极; 形成在所述第一电极上的多个半导体层; 导电半导体层，形成在所述多个半导体层上，并且具有指定度的倾斜角的外表面; 以及形成在导电半导体层上的第二电极。