公开(公告)号：US20080117879A1

公开(公告)日：2008-05-22

申请号：US11761377

申请日：2007-06-12

申请人： I-Wei Wu ,  Chun-Yun Hsieh ,  Jun-Lin Liu

发明人： I-Wei Wu ,  Chun-Yun Hsieh ,  Jun-Lin Liu

IPC分类号： H04Q7/00

CPC分类号： H04W36/36 ,  H04W36/08 ,  H04W36/30

摘要： A handoff method in a wireless local area network (WLAN) and an apparatus using the same are provided. A mobile station (MS) switches between a data transceiving mode and a probing mode at a predefined interval when the MS is transmitting/receiving packages. In the probing mode, the MS probes one or more channels each time and selects an access point (AP) for handoff from the probing result according to a predetermined rule, so as to re-establish a network connection.

摘要翻译： 提供了一种无线局域网（WLAN）中的切换方法及其使用方法。 当MS正在发送/接收包时，移动台（MS）以预定的间隔在数据收发模式和探测模式之间切换。 在探测模式下，MS每次探测一个或多个信道，并根据预定规则从探测结果中选择接入点（AP）进行切换，以便重新建立网络连接。

公开(公告)号：US07903611B2

公开(公告)日：2011-03-08

申请号：US11761377

申请日：2007-06-12

申请人： I-Wei Wu ,  Chun-Yun Hsieh ,  Jun-Lin Liu

发明人： I-Wei Wu ,  Chun-Yun Hsieh ,  Jun-Lin Liu

IPC分类号： H04W4/00 ,  H04W36/00

CPC分类号： H04W36/36 ,  H04W36/08 ,  H04W36/30

摘要： A handoff method in a wireless local area network (WLAN) and an apparatus using the same are provided. A mobile station (MS) switches between a data transceiving mode and a probing mode at a predefined interval when the MS is transmitting/receiving packages. In the probing mode, the MS probes one or more channels each time and selects an access point (AP) for handoff from the probing result according to a predetermined rule, so as to re-establish a network connection.

摘要翻译： 提供了一种无线局域网（WLAN）中的切换方法及其使用方法。 当MS正在发送/接收包时，移动台（MS）以预定的间隔在数据收发模式和探测模式之间切换。 在探测模式下，MS每次探测一个或多个信道，并根据预定规则从探测结果中选择接入点（AP）进行切换，以便重新建立网络连接。

公开(公告)号：US07812800B2

公开(公告)日：2010-10-12

申请号：US11232478

申请日：2005-09-21

申请人： Du-Zen Peng ,  Po-Yen Lu ,  Yaw-Ming Tsai ,  I-Wei Wu

发明人： Du-Zen Peng ,  Po-Yen Lu ,  Yaw-Ming Tsai ,  I-Wei Wu

IPC分类号： G09G3/32

CPC分类号： G09G3/3233 ,  G09G3/22 ,  G09G5/02 ,  G09G2300/0452 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/043 ,  G09G2320/0666 ,  G09G2360/148

摘要： A design approach for a panel including a luminiferous unit and a driving unit. The luminiferous unit comprises first and second color components respectively constituting first and second light component sources. First and second light components are emitted from the first and the second light component sources. The color of the first light component differs from that of the second light component. The design approach comprises defining a specific relationship according to a characteristic between the first and the second color components; and designing the driving unit according to the specific relationship.

摘要翻译： 面板的设计方法，包括发光单元和驱动单元。 发光单元包括分别构成第一和第二光分量源的第一和第二颜色分量。 第一和第二光分量从第一和第二光分量源发射。 第一光分量的颜色与第二光分量的颜色不同。 该设计方法包括根据第一和第二颜色分量之间的特性定义特定关系; 并根据具体关系设计驱动单元。

公开(公告)号：US07002652B2

公开(公告)日：2006-02-21

申请号：US10907053

申请日：2005-03-18

申请人： Chi-Jain Wen ,  Dai-Liang Ting ,  Hsiao-Yi Lin ,  Gwo-Long Lin ,  I-Wei Wu

发明人： Chi-Jain Wen ,  Dai-Liang Ting ,  Hsiao-Yi Lin ,  Gwo-Long Lin ,  I-Wei Wu

IPC分类号： G02F1/1368 ,  G02F1/1343

CPC分类号： G02F1/133555 ,  G02F1/13624

摘要： A transflective liquid crystal display (LCD) includes at least a transmission pixel region and at least a reflection pixel region positioned in a pixel region. The transmission region includes at least a transmissive electrode connected to a first switching element. The reflection pixel region includes at least a reflective electrode connected to a second switching element. The transmissive and the reflective electrodes are controlled respectively by independent switching elements.

摘要翻译： 半透射型液晶显示器（LCD）至少包括透射像素区域和至少位于像素区域中的反射像素区域。 透射区域至少包括连接到第一开关元件的透射电极。 反射像素区域至少包括连接到第二开关元件的反射电极。 透射和反射电极分别由独立的开关元件控制。

公开(公告)号：US06731352B2

公开(公告)日：2004-05-04

申请号：US10161301

申请日：2002-06-03

申请人： Chu-Jung Shih ,  Gwo-Long Lin ,  I-Min Lu ,  I-Wei Wu

发明人： Chu-Jung Shih ,  Gwo-Long Lin ,  I-Min Lu ,  I-Wei Wu

IPC分类号： G02F1136

CPC分类号： G02F1/136227 ,  G02F2202/104

摘要： A six mask-steps method for fabricating liquid crystal display is described. A driving area and a pixel area are defined by a first mask step. Gates on the driving/pixel area and upper electrodes of capacitors on the pixel area are defined by a second mask step. Then, using the gates and the upper electrodes as a mask, a source/drain, channel region and lower electrode are formed in the driving/pixel area by an ion-doping process. A second insulation layer is formed and covers the insulation substrate. A plurality of first openings is formed by the third mask step and the gate and the source/drain are exposed. A second conductive layer is formed and covers the second insulation layer and the first opening is filled. Then, the second conductive layer is patterned, and a source/drain line is formed and contacts electrically with the source/drain by the fourth mask step. A dielectric layer is formed and covers the second insulation layer and the second conductive layer; the dielectric layer has a planar surface. A second opening is formed by the fifth mask step and the drain line on the pixel area is exposed. Finally, a pixel electrode is defined by the sixth mask step and contacts electrically with the drain line.

摘要翻译： 描述了用于制造液晶显示器的六个掩模步骤方法。 驱动区域和像素区域由第一掩模步骤限定。 通过第二掩模步骤限定像素区域上的驱动/像素区域和电容器的上部电极。 然后，使用栅极和上部电极作为掩模，通过离子掺杂工艺在驱动/像素区域中形成源极/漏极，沟道区域和下部电极。 形成第二绝缘层并覆盖绝缘基板。 通过第三掩模步骤形成多个第一开口，露出栅极和源极/漏极。 形成第二导电层并覆盖第二绝缘层，并填充第一开口。 然后，对第二导电层进行构图，并且通过第四掩模步骤形成源极/漏极线并与源极/漏极电接触。 形成介电层并覆盖第二绝缘层和第二导电层; 电介质层具有平坦表面。 通过第五掩模步骤形成第二开口，并且暴露像素区域上的漏极线。 最后，像素电极由第六掩模步骤限定，并与漏极线电接触。

公开(公告)号：US5608557A

公开(公告)日：1997-03-04

申请号：US367984

申请日：1995-01-03

申请人： I-Wei Wu

发明人： I-Wei Wu

IPC分类号： H01L23/522 ,  G02F1/1368 ,  H01L21/768 ,  H01L21/822 ,  H01L23/482 ,  H01L23/532 ,  H01L23/538 ,  H01L27/04 ,  H01L29/786 ,  G02F1/1343

CPC分类号： H01L23/5386 ,  H01L23/4825 ,  H01L23/53257 ,  G02F1/1368 ,  G02F2202/104 ,  H01L2924/0002 ,  H01L2924/3011

摘要： Circuitry formed at a surface of a substrate includes first and second lines in first and second layers of the circuitry. The first line includes semiconductor material and extends between first and second connecting points at which it connects electrically to other components. The second line is connected to receive a gate signal, and crosses the first line in two or more channel regions. The first line includes a channel in each channel region, and the channels are in series. The second line conducts the gate signal to all of the channel regions. The first line includes charge carrier sources and destinations positioned so that conductivity of the first line between the first and second connecting points is controlled by the gate signal. The first layer can be polysilicon, and the second layer can be polysilicon or metal. The first line can be undoped in the channel regions but heavily doped in other areas. Each of the first and second lines can include an angle of approximately 90.degree. between two of the channel regions, forming a Crossed-L configuration. In an active matrix display or other array with M scan lines and N data lines, the first line can be connected to the nth data line and the second line can receive the gate signal from the mth scan line.

摘要翻译： 形成在衬底表面的电路包括在电路的第一和第二层中的第一和第二线。 第一行包括半导体材料，并在第一和第二连接点之间延伸，电连接到其他部件。 第二线连接以接收门信号，并且跨越两个或更多个信道区域中的第一线。 第一行包括每个通道区域中的通道，并且通道是串联的。 第二行将栅极信号传导到所有通道区域。 第一行包括电荷载体源和目的地，使得第一和第二连接点之间的第一线的导电性由栅极信号控制。 第一层可以是多晶硅，第二层可以是多晶硅或金属。 第一行可以在通道区域中未掺杂，但在其他区域中重掺杂。 第一和第二线中的每一个可以在两个通道区域之间包括大约90°的角度，形成交叉L配置。 在具有M条扫描线和N条数据线的有源矩阵显示器或其他阵列中，第一条线可以连接到第n条数据线，第二条线可以从第m条扫描线接收门信号。

公开(公告)号：US07480020B2

公开(公告)日：2009-01-20

申请号：US10942683

申请日：2004-09-16

申请人： Chi-Jain Wen ,  Dai-Liang Ting ,  Gwo-long Lin ,  Shyuan-Jeng Ho ,  I-Wei Wu

发明人： Chi-Jain Wen ,  Dai-Liang Ting ,  Gwo-long Lin ,  Shyuan-Jeng Ho ,  I-Wei Wu

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/13439

摘要： A transflective liquid crystal display and method of fabricating the same. The pixel region of the transflective comprises a thin film transistor, a transmissive electrode, and a reflective electrode, wherein the overlap of the reflective electrode and the transparent electrode composes a reflective region and the non-overlapping region of the reflective electrode and the transparent electrode form a transmissive region, and the transparent electrode and the source and the drain regions of the thin film transistor are formed of the same silicon layer.

摘要翻译： 半透射型液晶显示器及其制造方法。 半透反射体的像素区域包括薄膜晶体管，透射电极和反射电极，其中反射电极和透明电极的重叠构成反射区域和反射电极与透明电极的非重叠区域 形成透射区域，并且薄膜晶体管的透明电极和源极和漏极区域由相同的硅层形成。

公开(公告)号：US20050213002A1

公开(公告)日：2005-09-29

申请号：US10942683

申请日：2004-09-16

申请人： Chi-Jain Wen ,  Dai-Liang Ting ,  Gwo-Iong Lin ,  Shyuan-Jeng Ho ,  I-Wei Wu

发明人： Chi-Jain Wen ,  Dai-Liang Ting ,  Gwo-Iong Lin ,  Shyuan-Jeng Ho ,  I-Wei Wu

IPC分类号： G02F1/1335 ,  G02F1/1343

CPC分类号： G02F1/133555 ,  G02F1/13439

摘要： A transflective liquid crystal display and method of fabricating the same. The pixel region of the transflective comprises a thin film transistor, a transmissive electrode, and a reflective electrode, wherein the overlap of the reflective electrode and the transparent electrode composes a reflective region and the non-overlapping region of the reflective electrode and the transparent electrode form a transmissive region, and the transparent electrode and the source and the drain regions of the thin film transistor are formed of the same silicon layer.

摘要翻译： 半透射型液晶显示器及其制造方法。 半透反射体的像素区域包括薄膜晶体管，透射电极和反射电极，其中反射电极和透明电极的重叠构成反射区域和反射电极与透明电极的非重叠区域 形成透射区域，并且薄膜晶体管的透明电极和源极和漏极区域由相同的硅层形成。

公开(公告)号：US5557534A

公开(公告)日：1996-09-17

申请号：US367983

申请日：1995-01-03

申请人： I-Wei Wu

发明人： I-Wei Wu

IPC分类号： G02F1/136 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/768 ,  H01L23/482 ,  H01L23/52 ,  H01L23/532 ,  H01L23/538 ,  H01L27/12 ,  H01L29/786 ,  H01L21/72

CPC分类号： H01L23/4825 ,  H01L21/768 ,  H01L23/53257 ,  H01L23/5386 ,  G02F1/1362 ,  H01L2924/0002 ,  H01L2924/3011

摘要： Array circuitry formed at a surface of a substrate includes a first conductive layer with M scan lines, a second conductive layer with N data lines, and cell circuitry for a region in which the mth scan line and the nth data line cross. The cell circuitry includes a component with a data lead for receiving signals from or providing signals to the nth data line. A first semiconductor layer of the cell circuitry includes a first line with a channel between a connecting point to the nth data line and a connecting point to the component's data lead. A second semiconductor layer includes a second line extending from a connecting point to the mth scan line and crossing the first line at the channel. The first and second conductive layers and the cell circuitry are formed with electrical connections at the connecting points so that signals on the mth scan line control conductivity of the first line between the nth data line and the data lead. The semiconductor layers can be polysilicon. The first semiconductor layer can be formed before the second, with the first line electrically connected to the data lead by implanting a dopant. The connections to the mth scan line and the nth data line can be metal/semiconductor interfaces, with the first conductive layer deposited on the second line and with the second conductive layer deposited on the first line through an opening in an insulating layer.

摘要翻译： 形成在衬底的表面上的阵列电路包括具有M条扫描线的第一导电层，具有N条数据线的第二导电层和用于第m条扫描线和第n条数据线交叉的区域的单元电路。 单元电路包括具有用于从第n个数据线接收信号或向第n个数据线提供信号的数据引线的部件。 单元电路的第一半导体层包括具有在连接到第n数据线的连接点和与部件的数据引线的连接点之间的通道的第一线。 第二半导体层包括从连接点延伸到第m条扫描线并与通道上的第一条线交叉的第二条线。 第一和第二导电层和单元电路在连接点处形成有电连接，使得第m条扫描线上的信号控制第n条数据线和数据引线之间的第一条线的电导率。 半导体层可以是多晶硅。 第一半导体层可以在第二半导体层之前形成，其中第一线通过注入掺杂剂与数据引线电连接。 与第m扫描线和第n数据线的连接可以是金属/半导体接口，其中第一导电层沉积在第二线上，并且第二导电层通过绝缘层中的开口沉积在第一线上。

公开(公告)号：US4988638A

公开(公告)日：1991-01-29

申请号：US546288

申请日：1990-06-29

申请人： Tiao-Yuan Huang ,  Anne Chiang ,  I-Wei Wu

发明人： Tiao-Yuan Huang ,  Anne Chiang ,  I-Wei Wu

IPC分类号： H01L27/092 ,  H01L29/786

CPC分类号： H01L27/1251 ,  H01L27/092 ,  H01L27/1214 ,  H01L29/78663 ,  H01L29/78672

摘要： A thin film SOI CMOS device wherein the suitably doped deposited layers of an n-channel transistor and a p-channel transistor are simultaneously deposited. The source and drain elements of one transistor and the gate element of the other transistor are formed in a lower, highly doped, semiconductor layer and are separated from the corresponding gate element and source and drain elements formed in an upper, highly doped, semiconductor layer. The layer levels are separated by two intrinsic or lightly doped semiconductor layers sandwiching a dielectric layer, so that the intrinsic or lightly doped semiconductor layer lying contiguous to the source and drain elements serves as an active channel layer and the intrinsic or lightly doped semiconductor layer lying contiguous to the gate element serves to extend the gate layer.

摘要翻译： 一种薄膜SOI CMOS器件，其中同时沉积n沟道晶体管和p沟道晶体管的适当掺杂的沉积层。 一个晶体管的源极和漏极元件和另一个晶体管的栅极元件形成在下部，高度掺杂的半导体层中，并且与相应的栅极元件分离，并且源极和漏极元件形成在上部，高度掺杂的半导体层 。 层级由夹持介电层的两个本征或轻掺杂半导体层分开，使得邻近源极和漏极元件的本征或轻掺杂半导体层用作有源沟道层，并且本征或轻掺杂半导体层位于 邻接于栅极元件用于延伸栅极层。