公开(公告)号：US20130146936A1

公开(公告)日：2013-06-13

申请号：US13758647

申请日：2013-02-04

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Yao-Jun TSAI ,  Chen-Peng HSU ,  Kuo-Feng LIN ,  Hsun-Chih LIU ,  Ji-Feng CHEN ,  Hung-Lieh HU ,  Chien-Jen SUN

IPC: H01L33/62 ,  H01L33/48

CPC classification number: H01L33/62 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/48 ,  H01L2224/06102 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/24 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48463 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/8592 ,  H01L2224/92244 ,  H01L2924/12032 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than O. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency.

Abstract translation: 提供一种发光二极管芯片，发光二极管封装结构及其形成方法。 发光二极管芯片包括具有多个空隙的接合层，或者发光二极管芯片的周围边界和接合层之间的最小水平距离大于O.发光二极管芯片，发光 二极管封装结构和方法可以提高产品产量并提高发光效率。

公开(公告)号：US20130146921A1

公开(公告)日：2013-06-13

申请号：US13730801

申请日：2012-12-28

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Chien-Chun LU ,  Chia-tai KUO ,  Chen-Peng HSU ,  Hung-Lieh HU ,  Chien-Jen SUN

IPC: H01L33/50

CPC classification number: H01L33/505 ,  H01L33/508 ,  H01L33/60 ,  H01L2924/0002 ,  H05B33/10 ,  H01L2924/00

Abstract: A light emitting device and a fabricating method thereof are described. The light emitting device includes a substrate, a light emitting chip, a tubular structure, and a fluorescent conversion layer. The tubular structure is formed on a surface of the substrate. The light emitting chip is disposed on the surface of the substrate and is surrounded by the tubular structure. The fluorescent conversion layer is disposed in the tubular structure and covers the light emitting chip. A ratio of a maximal vertical thickness and a maximal horizontal thickness of the fluorescent conversion layer at the light emitting chip is between 0.1 and 10. A distance for the light ray to pass through the fluorescent conversion layer is controlled by using the tubular structure, so as to solve a problem of the conventional art that fluorescent powder coating package technique results in non-uniform color temperature of the emitted light.