公开(公告)号：US20180180730A1

公开(公告)日：2018-06-28

申请号：US15901108

申请日：2018-02-21

Applicant: Infineon Technologies AG

Inventor： Josef Boeck ,  Rudolf Lachner ,  Maciej Wojnowski ,  Walter Hartner

IPC: G01S13/86 ,  G01S7/02 ,  G01S7/00 ,  G01S13/00 ,  H04B1/40 ,  G01S7/03 ,  G01S13/87 ,  G01S13/93

CPC classification number: G01S13/86 ,  G01S7/006 ,  G01S7/02 ,  G01S7/032 ,  G01S13/003 ,  G01S13/878 ,  G01S13/931 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H04B1/40

Abstract: A semiconductor package having an antenna; and a semiconductor die which is coupled to the antenna and comprises a transmitter configured to transmit wirelessly via the antenna a wireless signal having information on a local oscillator signal to a further semiconductor package comprising a further semiconductor die.

公开(公告)号：US09583811B2

公开(公告)日：2017-02-28

申请号：US14453746

申请日：2014-08-07

Applicant: Infineon Technologies AG

Inventor： Ernst Seler ,  Maciej Wojnowski ,  Walter Hartner ,  Josef Boeck

IPC: H01P5/107 ,  H01P11/00 ,  H01P1/04 ,  H04B5/00

CPC classification number: H01P5/107 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/18162 ,  H01P1/042 ,  H01P11/002 ,  H01P11/003 ,  H04B5/00

Abstract: A microwave device includes a semiconductor package comprising a microwave semiconductor chip and a waveguide part associated with the semiconductor package. The waveguide part is configured to transfer a microwave waveguide signal. It includes one or more pieces. The microwave device further includes a transformer element configured to transform a microwave signal from the microwave semiconductor chip into the microwave waveguide signal or to transform the microwave waveguide signal into a microwave signal for the microwave semiconductor chip.

Abstract translation: 微波器件包括包括微波半导体芯片和与半导体封装件相关联的波导部件的半导体封装。 波导部分被配置为传送微波波导信号。 它包括一个或多个片段。 微波装置还包括变换元件，其被配置为将来自微波半导体芯片的微波信号转换成微波波导信号，或者将微波波导信号转换为用于微波半导体芯片的微波信号。

公开(公告)号：US20150177373A1

公开(公告)日：2015-06-25

申请号：US14135069

申请日：2013-12-19

Applicant: Infineon Technologies AG

Inventor： Josef Boeck ,  Rudolf Lachner ,  Maciej Wojnowski ,  Walter Hartner

IPC: G01S13/86 ,  G01S7/02 ,  H04B1/40

CPC classification number: G01S13/86 ,  G01S7/006 ,  G01S7/02 ,  G01S7/032 ,  G01S13/003 ,  G01S13/878 ,  G01S13/931 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H04B1/40

Abstract: A wireless communication system includes a first semiconductor module and a second semiconductor module. The first semiconductor module includes a semiconductor die connected to an antenna structure. The semiconductor die of the first semiconductor module and the antenna structure of the first semiconductor module are arranged within a common package. The semiconductor die of the first semiconductor module includes a transmitter module configured to transmit the wireless communication signal through the antenna structure of the first semiconductor module. The second semiconductor module includes a semiconductor die connected to an antenna structure. The semiconductor die of the second semiconductor module includes a receiver module configured to receive the wireless communication signal through the antenna structure of the second semiconductor module from the first semiconductor module.

Abstract translation: 无线通信系统包括第一半导体模块和第二半导体模块。 第一半导体模块包括连接到天线结构的半导体管芯。 第一半导体模块的半导体管芯和第一半导体模块的天线结构布置在公共封装内。 第一半导体模块的半导体管芯包括被配置为通过第一半导体模块的天线结构发送无线通信信号的发射器模块。 第二半导体模块包括连接到天线结构的半导体管芯。 第二半导体模块的半导体管芯包括：接收器模块，被配置为通过第二半导体模块的天线结构从第一半导体模块接收无线通信信号。

公开(公告)号：US09761701B2

公开(公告)日：2017-09-12

申请号：US14267651

申请日：2014-05-01

Applicant: Infineon Technologies AG

Inventor： Josef Boeck ,  Wolfgang Liebl

IPC: H01L29/732 ,  H01L21/324 ,  H01L21/225 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/66 ,  H01L29/737

CPC classification number: H01L29/732 ,  H01L21/225 ,  H01L21/324 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/66234 ,  H01L29/66272 ,  H01L29/7371

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers.

公开(公告)号：US20170213800A1

公开(公告)日：2017-07-27

申请号：US15480751

申请日：2017-04-06

Applicant: Infineon Technologies AG

Inventor： Ernst Seler ,  Maciej Wojnowski ,  Walter Hartner ,  Josef Boeck

IPC: H01L23/66 ,  H01Q13/08 ,  H01L23/538 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48

CPC classification number: H01L23/66 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/96 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/12042 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01Q13/08 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device package includes placing a semiconductor chip on a carrier, covering the semiconductor chip with an encapsulation material to form an encapsulation body, providing a microwave component having at least one electrically conducting wall structure integrated in the encapsulation body, and forming an electrical interconnect configured to electrically couple the semiconductor chip and the microwave component.

公开(公告)号：US20160247780A1

公开(公告)日：2016-08-25

申请号：US15146090

申请日：2016-05-04

Applicant: Infineon Technologies AG

Inventor： Ernst Seler ,  Maciej Wojnowski ,  Walter Hartner ,  Josef Boeck

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/66

CPC classification number: H01L23/66 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/96 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/12042 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01Q13/08 ,  H01L2924/00

Abstract: A method of manufacturing an array of semiconductor device packages includes placing a plurality of semiconductor chips on a temporary carrier, covering the plurality of semiconductor chips with an encapsulation material to form an encapsulation body, providing a plurality of microwave components each including at least one electrically conducting wall structure integrated in the encapsulation body, forming a plurality of electrical interconnects each configured to electrically couple a semiconductor chip and a microwave component, and separating the encapsulation body into single semiconductor device packages each including a semiconductor chip, a microwave component and an electrical interconnect.

Abstract translation: 制造半导体器件封装阵列的方法包括将多个半导体芯片放置在临时载体上，用封装材料覆盖多个半导体芯片以形成封装体，提供多个微波元件，每个微波元件包括至少一个电 导电壁结构集成在封装体中，形成多个电互连，每个电互连配置成电耦合半导体芯片和微波部件，并将封装体分离成单个半导体器件封装，每个半导体器件封装包括半导体芯片，微波部件和电 互连。

公开(公告)号：US09922946B2

公开(公告)日：2018-03-20

申请号：US15480751

申请日：2017-04-06

Applicant: Infineon Technologies AG

Inventor： Ernst Seler ,  Maciej Wojnowski ,  Walter Hartner ,  Josef Boeck

IPC: H01L23/66 ,  H01L23/538 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48 ,  H01Q13/08

CPC classification number: H01L23/66 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/96 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/12042 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01Q13/08 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device package includes placing a semiconductor chip on a carrier, covering the semiconductor chip with an encapsulation material to form an encapsulation body, providing a microwave component having at least one electrically conducting wall structure integrated in the encapsulation body, and forming an electrical interconnect configured to electrically couple the semiconductor chip and the microwave component.

公开(公告)号：US09871125B2

公开(公告)日：2018-01-16

申请号：US15449199

申请日：2017-03-03

Applicant: Infineon Technologies AG

Inventor： Josef Boeck ,  Wolfgang Liebl

IPC: H01L29/737 ,  H01L21/225 ,  H01L21/324 ,  H01L29/732 ,  H01L29/66 ,  H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/732 ,  H01L21/225 ,  H01L21/324 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/66234 ,  H01L29/66272 ,  H01L29/7371

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers.

公开(公告)号：US20170179264A1

公开(公告)日：2017-06-22

申请号：US15449199

申请日：2017-03-03

Applicant: Infineon Technologies AG

Inventor： Josef Boeck ,  Wolfgang Liebl

IPC: H01L29/737 ,  H01L21/225 ,  H01L21/324 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/732 ,  H01L29/06

CPC classification number: H01L29/732 ,  H01L21/225 ,  H01L21/324 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/66234 ,  H01L29/66272 ,  H01L29/7371

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers

公开(公告)号：US09653426B2

公开(公告)日：2017-05-16

申请号：US15146090

申请日：2016-05-04

Applicant: Infineon Technologies AG

Inventor： Ernst Seler ,  Maciej Wojnowski ,  Walter Hartner ,  Josef Boeck

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/66

CPC classification number: H01L23/66 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/96 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/12042 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01Q13/08 ,  H01L2924/00

Abstract: A method of manufacturing an array of semiconductor device packages includes placing a plurality of semiconductor chips on a temporary carrier, covering the plurality of semiconductor chips with an encapsulation material to form an encapsulation body, providing a plurality of microwave components each including at least one electrically conducting wall structure integrated in the encapsulation body, forming a plurality of electrical interconnects each configured to electrically couple a semiconductor chip and a microwave component, and separating the encapsulation body into single semiconductor device packages each including a semiconductor chip, a microwave component and an electrical interconnect.