SELECTIVE LAYER TRANSFER PROCESS IMPROVEMENTS

    公开(公告)号:US20250112218A1

    公开(公告)日:2025-04-03

    申请号:US18478831

    申请日:2023-09-29

    Abstract: In one embodiment, a selective layer transfer process includes forming a layer of integrated circuit (IC) components on a first substrate, forming first bonding structures on a second substrate, and partially bonding the first substrate to the second substrate, which includes bonding a first subset of IC components on the first substrate to respective bonding structures on the second substrate. The process also includes forming second bonding structures on a third substrate, where the second bonding structures are arranged in a layout that is offset from the layout of the second substrate. The process further includes partially bonding the first substrate to the third substrate, which includes bonding a second subset of IC components on the first substrate to respective bonding structures on the third substrate.

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