公开(公告)号：US20160358897A1

公开(公告)日：2016-12-08

申请号：US14778036

申请日：2014-12-09

Applicant: INTEL CORPORATION

Inventor： Sven ALBERS ,  Andreas WOLTER ,  Klaus REINGRUBER ,  Thorsten MEYER

IPC: H01L25/16 ,  H01L23/31 ,  H01L21/56 ,  H01L23/498 ,  H01L49/02 ,  H01L21/683

CPC classification number: H01L25/16 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/48 ,  H01L23/49816 ,  H01L23/552 ,  H01L23/66 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L24/96 ,  H01L25/065 ,  H01L25/0655 ,  H01L25/07 ,  H01L25/50 ,  H01L28/00 ,  H01L2221/68359 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81201 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A method including forming at least one passive structure on a substrate by a build-up process; introducing one or more integrated circuit chips on the substrate; and introducing a molding compound on the at least one passive structure and the one or more integrated circuit chips. A method including forming at least one passive structure on a substrate by a three-dimensional printing process; introducing one or more integrated circuit chips on the substrate; and embedding the at least one passive structure and the one or more integrated circuit chips in a molding compound. An apparatus including a package substrate including at least one three-dimensional printed passive structure and one or more integrated circuit chips embedded in a molding material.

Abstract translation: 一种方法，包括通过积聚过程在衬底上形成至少一个被动结构; 在衬底上引入一个或多个集成电路芯片; 以及在所述至少一个无源结构和所述一个或多个集成电路芯片上引入模塑料。 一种方法，包括通过三维印刷方法在基板上形成至少一个被动结构; 在衬底上引入一个或多个集成电路芯片; 以及将所述至少一个被动结构和所述一个或多个集成电路芯片嵌入到模塑料中。 一种包括包括至少一个三维印刷无源结构和嵌入在成型材料中的一个或多个集成电路芯片的封装基板的装置。

公开(公告)号：US20240213225A1

公开(公告)日：2024-06-27

申请号：US18601774

申请日：2024-03-11

Applicant: Intel Corporation

Inventor： Georg SEIDEMANN ,  Klaus REINGRUBER ,  Christian GEISSLER ,  Sven ALBERS ,  Andreas WOLTER ,  Marc DITTES ,  Richard PATTEN

IPC: H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/498 ,  H01L23/538 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L21/486 ,  H01L23/3107 ,  H01L23/48 ,  H01L23/49827 ,  H01L23/5384 ,  H01L24/19 ,  H01L24/20 ,  H01L24/25 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/50 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/5389 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/2518 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/92224 ,  H01L2224/97 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/3511

Abstract: Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.

公开(公告)号：US20220108976A1

公开(公告)日：2022-04-07

申请号：US17553679

申请日：2021-12-16

Applicant: Intel Corporation

Inventor： Georg SEIDEMANN ,  Klaus REINGRUBER ,  Christian GEISSLER ,  Sven ALBERS ,  Andreas WOLTER ,  Marc DITTES ,  Richard PATTEN

IPC: H01L25/065 ,  H01L23/48 ,  H01L23/00 ,  H01L25/00 ,  H01L23/498 ,  H01L21/48 ,  H01L23/31 ,  H01L23/538

Abstract: Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.