Abstract:
A microelectronic structure may be formed comprising a microelectronic package having a plurality of interconnects and a microelectronic substrate including an upper metallization layer and a solder resist structure, wherein the solder resist structure includes a first structure which forms an electrical connection between a first interconnect of the plurality of interconnects of the microelectronic package and the upper metallization layer of the microelectronic substrate, and wherein solder resist structure includes a second structure which prevents second interconnect of the plurality of interconnects of the microelectronic package from making electrical contact with the upper metallization layer.
Abstract:
A microelectronic structure may be formed comprising a microelectronic package having a plurality of interconnects and a microelectronic substrate including an upper metallization layer and a solder resist structure, wherein the solder resist structure includes a first structure which forms an electrical connection between a first interconnect of the plurality of interconnects of the microelectronic package and the upper metallization layer of the microelectronic substrate, and wherein solder resist structure includes a second structure which prevents second interconnect of the plurality of interconnects of the microelectronic package from making electrical contact with the upper metallization layer.
Abstract:
A microelectronic structure may be formed comprising a microelectronic package having a plurality of interconnects and a microelectronic substrate including an upper metallization layer and a solder resist structure, wherein the solder resist structure includes a first structure which forms an electrical connection between a first interconnect of the plurality of interconnects of the microelectronic package and the upper metallization layer of the microelectronic substrate, and wherein solder resist structure includes a second structure which prevents second interconnect of the plurality of interconnects of the microelectronic package from making electrical contact with the upper metallization layer.
Abstract:
Techniques for routing signal traces in a circuit board are described. An example of an electronic device in accordance with the described techniques includes a circuit board comprising a plurality of conductive layers. The conductive layers include a signal layer and a reference plane. The signal layer includes signal traces and the reference plane includes an additional signal trace.
Abstract:
A retention apparatus for a shielded cable is described. In one embodiment, the apparatus comprises a substrate having a ground; a connector coupled to the substrate; a cable shielded with a conductive material and having an end connectable to the connector to electrically connect with the connector; an electrically conductive material coupled to the ground of the substrate; and a grounding retention mechanism to cause the electrically conductive material to electrically connect the cable to the ground of the substrate by applying a force to the cable shield.
Abstract:
Techniques for routing signal traces in a circuit board are described. An example of an electronic device in accordance with the described techniques includes a circuit board comprising a plurality of conductive layers. The conductive layers include a signal layer and a reference plane. The signal layer includes signal traces and the reference plane includes an additional signal trace.
Abstract:
A microelectronic structure may be formed comprising a microelectronic package having a plurality of interconnects and a microelectronic substrate including an upper metallization layer and a solder resist structure, wherein the solder resist structure includes a first structure which forms an electrical connection between a first interconnect of the plurality of interconnects of the microelectronic package and the upper metallization layer of the microelectronic substrate, and wherein solder resist structure includes a second structure which prevents second interconnect of the plurality of interconnects of the microelectronic package from making electrical contact with the upper metallization layer.
Abstract:
Techniques and mechanisms for mitigating the effect of signal noise on communication via an interconnect. In an embodiment, a substrate includes an interconnect and a conductor which has a hole formed therein. Portions of the interconnect variously extend over a side of the conductor, wherein another recess portion of the interconnect extends from a plane which includes the side, and further extends at least partially into the hole. The configuration of the recess portion extending within the hole may contribute to an impedance which dampens a transmitter slew rate of the communication. In an embodiment, a total distance along a path formed by the interconnect is equal to or less than 5.5 inches.
Abstract:
In accordance with some embodiments, a high speed connection may be implemented using pogo-pins. The use of pogo-pins may be advantageous because accurate alignment is not required, connection force is generally lower than with other connections and appearance is often highly advantageous. Through the use of a moveable metal shield, an advantageous high speed connection for high speed signaling may be implemented between the two devices.
Abstract:
In one example a electronic device comprises a body, a receptacle in the body comprising an opening to receive a memory card, wherein the receptacle comprises a first set of connectors configured to connect with pins on a memory card configured in accordance with a first standard and a second set of connectors configured to connect with pins on a memory card configured in accordance with a second standard. Other examples may be described.