公开(公告)号：US20180368756A1

公开(公告)日：2018-12-27

申请号：US15631064

申请日：2017-06-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： MAHMOUD AMIN ,  ZHENXING BI ,  LAWRENCE A. CLEVENGER ,  LEIGH ANNE H. CLEVENGER ,  KRISHNA R. TUNGA

IPC: A61B5/00 ,  G06F19/00

Abstract: Embodiments of the invention are directed to a computer-implemented method for generating a sleep optimization plan. A non-limiting example of the computer-implemented method includes receiving, by a processor, genetic data for a user. The method also includes receiving, by the processor, Internet of Things (IoT) device data for the user. The method also includes generating, by the processor, a sleep duration measurement for the user based at last in part upon the IoT device data. The method also includes generating, by the processor, a sleep optimization plan for the user based at least in part upon the genetic data.

公开(公告)号：US20190122177A1

公开(公告)日：2019-04-25

申请号：US15787814

申请日：2017-10-19

Applicant: International Business Machines Corporation

Inventor： BENJAMIN D. BRIGGS ,  LAWRENCE A. CLEVENGER ,  LEIGH A. CLEVENGER ,  CHRISTOPHER J. PENNY ,  MICHAEL RIZZOLO ,  ALDIS G. SIPOLINS

IPC: G06Q10/08 ,  B64C39/02 ,  B60L11/18 ,  G08G5/00

Abstract: A delivery system is provided. In the delivery system, drones deliver items in a serviced area and charging stations are distributed throughout the serviced area. Each charging station is configured to charge one or more of the drones. The delivery system further includes a processor that is communicative with at least the charging stations. The processor is configured to dynamically route delivery operations of each of the drones in accordance with one or more parameters. The processor is further configured to communicate with individuals involved with the delivery operations in accordance with any of the charging stations being associated with the delivery operations.

公开(公告)号：US20180122703A1

公开(公告)日：2018-05-03

申请号：US15463155

申请日：2017-03-20

Applicant: International Business Machines Corporation

Inventor： KANGGUO CHENG ,  LAWRENCE A. CLEVENGER ,  BALASUBRAMANIAN S. PRANATHARTHIHARAN ,  JOHN ZHANG

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L21/823418 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/775 ,  H01L29/785 ,  H01L29/786 ,  H01L29/78696

Abstract: A semiconductor device includes a first gate stack arranged about a first nanowire and a second nanowire, the first nanowire is arranged above a second nanowire, the first nanowire is connected to a first source/drain region and a second source/drain region. A second gate stack is arranged about a third nanowire and a fourth nanowire, the third nanowire is arranged above a fourth nanowire, the third nanowire is connected to a third source/drain region and a fourth source/drain region. An insulator layer having a first thickness is arranged adjacent to the first gate stack.

公开(公告)号：US20200013868A1

公开(公告)日：2020-01-09

申请号：US16546351

申请日：2019-08-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： LAWRENCE A. CLEVENGER ,  JUNLI WANG ,  KIRK D. PETERSON ,  BAOZHEN LI ,  TERRY A. SPOONER ,  JOHN E. SHEETS, II

IPC: H01L29/45 ,  H01L21/768 ,  H01L29/417 ,  H01L29/78 ,  H01L29/66

Abstract: According to an embodiment of the present invention, a method for forming contacts includes forming an oxide layer over and along a first liner layer. A first spacer layer is formed along the first liner layer opposing the oxide layer. A work function metal layer is formed along the first spacer layer opposing the first liner layer. A gate is formed on and along the work function metal opposing the first spacer. A second spacer layer is formed on the oxide layer. Portions of the oxide layer, the first liner layer, the first spacer, the work function metal layer and the second spacer layer are removed which forms a recess between the gate and the first spacer layer. A second liner layer is deposited in the recess. A low-resistance metal is deposited in the removed portions to form the first contact.

公开(公告)号：US20170372909A1

公开(公告)日：2017-12-28

申请号：US15193759

申请日：2016-06-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： BENJAMIN D. BRIGGS ,  LAWRENCE A. CLEVENGER ,  YANN A. MIGNOT

IPC: H01L21/3065 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/033

CPC classification number: H01L21/3065 ,  H01L21/02123 ,  H01L21/0271 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31144

Abstract: Aspects of the disclosure include method of making semiconductor structures. Aspects include providing a semiconductor structure including a plurality of spacer, an organic planarization layer, and a SiARC layer. Aspects also include forming an inverted mask on the semiconductor structure, the inverted mask including an inverted mask opening above a portion of the plurality of spacers and a portion of the TiN layer. Aspects also include eroding the portion of the plurality of spacers below the inverted mask opening. Aspects also include depositing a fill material masking the portion of the plurality of spacers below the inverted mask opening and the portion of the TiN layer below the inverted mask opening to generate a masked TiN layer segment and an unmasked TiN layer segment and removing a portion of the unmasked TiN layer segment.