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1.发明授权公开(公告)号：US11665979B2
公开(公告)日：2023-05-30
申请号：US16840179
申请日：2020-04-03
Inventor： Jaewoo Jeong , Mahesh G. Samant , Yari Ferrante , Panagiotis Charilaos Filippou , Chirag Garg , Stuart Stephen Papworth Parkin
CPC classification number: H01L43/10 , G11C11/161 , H01F10/329 , H01F10/3254 , H01F10/3286 , H01F41/32 , H01L27/228 , H01L43/02 , H01L43/12
Abstract: A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.
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公开(公告)号：US11538987B2
公开(公告)日：2022-12-27
申请号：US17100723
申请日：2020-11-20
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Stuart Stephen Papworth Parkin , Mahesh Samant
Abstract: A device including a first magnetic layer, a templating structure and a second magnetic layer is described. The templating structure is on the first magnetic layer. The second magnetic layer is on the templating structure. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. At least one of the first magnetic layer and the second magnetic layer includes at least one of a Heusler compound and an L10 compound.
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公开(公告)号：US20220165939A1
公开(公告)日：2022-05-26
申请号：US17100726
申请日：2020-11-20
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Stuart Stephen Papworth Parkin , Mahesh Samant
Abstract: A device including a templating structure and a magnetic layer is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The magnetic layer is on the templating structure and includes at least one of a Heusler compound and an L10 compound. The magnetic layer is in contact with the templating structure and being magnetic at room temperature.
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4.发明申请SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT INTEGRATION AND METHOD OF FABRICATING THE MEMORY ELEMENT 有权用于电路集成的旋转电流开关磁记忆元件和制造记忆元件的方法公开(公告)号：US20140008743A1
公开(公告)日：2014-01-09
申请号：US14017565
申请日：2013-09-04
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
CPC classification number: H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F41/308 , H01L27/222 , H01L43/08 , H01L43/12
Abstract: A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer.
Abstract translation: 自旋电流切换磁存储元件包括多个磁性层，所述多个磁性层中的至少一个具有垂直磁各向异性分量并且包括电流可切换磁矩，以及至少一个形成在多个磁性层上的阻挡层 的磁性层。 多个磁性层包括至少一个复合层。
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公开(公告)号：US20220262555A1
公开(公告)日：2022-08-18
申请号：US17318998
申请日：2021-05-12
Inventor： Jaewoo Jeong , Sergey Faleev , Panagiotis Charilaos Filippou , Yari Ferrante , Stuart Stephen Papworth Parkin , Mahesh Samant
Abstract: A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by A1-xEx, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.
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Patent Agency Ranking
公开(公告)号：US20220165938A1
公开(公告)日：2022-05-26
申请号：US17100723
申请日：2020-11-20
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Stuart Stephen Papworth Parkin , Mahesh Samant
Abstract: A device including a first magnetic layer, a templating structure and a second magnetic layer is described. The templating structure is on the first magnetic layer. The second magnetic layer is on the templating structure. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. At least one of the first magnetic layer and the second magnetic layer includes at least one of a Heusler compound and an L10 compound.
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公开(公告)号：US11804321B2
公开(公告)日：2023-10-31
申请号：US17100719
申请日：2020-11-20
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Stuart Stephen Papworth Parkin , Mahesh Samant
IPC: H01F10/32 , H01F41/32 , C30B33/02 , C23C14/18 , C30B29/52 , C30B23/02 , C23C14/35 , C30B23/08 , C30B30/04 , H10N50/00 , H01F10/30 , H10B61/00 , H10N50/10
CPC classification number: H01F10/3254 , C23C14/185 , C23C14/35 , C30B23/025 , C30B23/08 , C30B29/52 , C30B30/04 , C30B33/02 , H01F10/30 , H01F10/3272 , H01F41/32 , H10B61/00 , H10N50/00 , H10N50/10
Abstract: A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L10 compound, the magnetic layer being in contact with the templating structure.
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公开(公告)号：US11751486B2
公开(公告)日：2023-09-05
申请号：US17100726
申请日：2020-11-20
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Stuart Stephen Papworth Parkin , Mahesh Samant
CPC classification number: H10N50/85 , H01F10/3254 , H01F10/3272 , H01F41/32 , H10B61/00 , H10N50/01
Abstract: A device including a templating structure and a magnetic layer is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The magnetic layer is on the templating structure and includes at least one of a Heusler compound and an L10 compound. The magnetic layer is in contact with the templating structure and being magnetic at room temperature.
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9.发明申请公开(公告)号：US20210175416A1
公开(公告)日：2021-06-10
申请号：US16840179
申请日：2020-04-03
Inventor： Jaewoo Jeong , Mahesh G. Samant , Yari Ferrante , Panagiotis Charilaos Filippou , Chirag Garg , Stuart Stephen Papworth Parkin
Abstract: A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.
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10.发明授权Controlling the conductivity of an oxide by applying voltage pulses to an ionic liquid 有权通过向离子液体施加电压脉冲来控制氧化物的电导率公开(公告)号：US09590176B2
公开(公告)日：2017-03-07
申请号：US13829690
申请日：2013-03-14
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Stuart Stephen Papworth Parkin , Mahesh G. Samant
CPC classification number: H01L49/003 , H01L45/04 , H01L45/1206 , H01L45/1226 , H01L45/146 , H01L51/055
Abstract: Electrolyte gating with ionic liquids is a powerful tool for inducing conducting phases in correlated insulators. An archetypal correlated material is VO2 which is insulating only at temperatures below a characteristic phase transition temperature. We show that electrolyte gating of epitaxial thin films of VO2 suppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 K even after the ionic liquid is completely removed. We provide compelling evidence that, rather than electrostatically induced carriers, electrolyte gating of VO2 leads to the electric field induced creation of oxygen vacancies, and the consequent migration of oxygen from the oxide film into the ionic liquid.
Abstract translation: 用离子液体进行电解质浇注是在相关绝缘体中诱导导电相的强大工具。 原型相关材料是仅在低于特征相变温度的温度下绝缘的VO2。 我们显示VO2的外延薄膜的电解质门控抑制了金属与绝缘体的转变，并且即使在离子液体被完全去除之后也将金属相稳定在低于5K的温度。 我们提供令人信服的证据，而不是静电诱导的载体，VO2的电解质门控导致电场引起氧空位的产生，并且随之而来的氧从氧化膜迁移到离子液体中。
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