公开(公告)号：US20190198347A1

公开(公告)日：2019-06-27

申请号：US16288920

申请日：2019-02-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michel J. ABOU-KHALIL ,  Robert J. GAUTHIER, JR. ,  Tom C. LEE ,  Junjun LI ,  Souvick MITRA ,  Christopher S. PUTNAM ,  Robert R. ROBISON

IPC: H01L21/324 ,  H01L29/861 ,  H01L27/02 ,  H01L29/866

CPC classification number: H01L21/324 ,  H01L27/0255 ,  H01L29/8611 ,  H01L29/866

Abstract: Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a substrate and a P+ diffusion on the substrate. The P+ diffusion is in electrical contact with the N+ diffusion. The method further includes forming a device between the N+ diffusion and the P+ diffusion. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds.

公开(公告)号：US20160035717A1

公开(公告)日：2016-02-04

申请号：US14882549

申请日：2015-10-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michel J. ABOU-KHALIL ,  Robert J. GAUTHIER, JR. ,  Tom C. LEE ,  Junjun LI ,  Souvick MITRA ,  Christopher S. PUTNAM ,  Robert R. ROBISON

IPC: H01L27/02 ,  H01L29/861

CPC classification number: H01L21/324 ,  H01L27/0255 ,  H01L29/8611 ,  H01L29/866

Abstract: Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a substrate and a P+ diffusion on the substrate. The P+ diffusion is in electrical contact with the N+ diffusion. The method further includes forming a device between the N+ diffusion and the P+ diffusion. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds.

Abstract translation: 为纳秒电脉冲退火工艺提供了结构和方法。 形成静电放电（ESD）N + / P +结构的方法包括在衬底上形成N +扩散和在衬底上形成P +扩散。 P +扩散与N +扩散电接触。 该方法还包括在N +扩散和P +扩散之间形成器件。 退火结构或材料的方法包括跨多个纳秒的静电放电（ESD）N + / P +结构施加电脉冲。

公开(公告)号：US20140124903A1

公开(公告)日：2014-05-08

申请号：US14154273

申请日：2014-01-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michel J. ABOU-KHALIL ,  Robert J. GAUTHIER, JR. ,  Tom C. LEE ,  Junjun LI ,  Souvick MITRA ,  Christopher S. PUTNAM ,  Robert R. ROBISON

IPC: H01L21/324 ,  H01L29/861

CPC classification number: H01L21/324 ,  H01L27/0255 ,  H01L29/8611 ,  H01L29/866

Abstract: Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a substrate and a P+ diffusion on the substrate. The P+ diffusion is in electrical contact with the N+ diffusion. The method further includes forming a device between the N+ diffusion and the P+ diffusion. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds.

Abstract translation: 为纳秒电脉冲退火工艺提供了结构和方法。 形成静电放电（ESD）N + / P +结构的方法包括在衬底上形成N +扩散和在衬底上形成P +扩散。 P +扩散与N +扩散电接触。 该方法还包括在N +扩散和P +扩散之间形成器件。 退火结构或材料的方法包括跨多个纳秒的静电放电（ESD）N + / P +结构施加电脉冲。

公开(公告)号：US20130161687A1

公开(公告)日：2013-06-27

申请号：US13762948

申请日：2013-02-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michel J. ABOU-KHALIL ,  Robert J. GAUTHIER, JR. ,  Tom C. LEE ,  Junjun LI ,  Souvick MITRA ,  Christopher S. PUTNAM

IPC: H01L29/747

CPC classification number: H01L27/0262 ,  H01L29/747 ,  H01L29/87 ,  H02H9/04

Abstract: Bi-directional back-to-back stacked SCRs for high-voltage pin ESD protection, methods of manufacture and design structures are provided. The device includes a symmetrical bi-directional back-to-back stacked silicon controlled rectifier (SCR). An anode of a first of the back-to-back stacked SCR is connected to an input. An anode of a second of the back-to-back stacked SCR is connected to ground. Cathodes of the first and second of the back-to-back stacked SCR are connected together. Each of the symmetrical bi-directional back-to-back SCRs include a pair of diodes directing current towards the cathodes which, upon application of a voltage, become reverse biased effectively and deactivating elements from one of the symmetrical bi-directional back-to-back SCRs while the diodes of another of the symmetrical bi-directional back-to-back SCRs direct current in the same direction as the reverse biased diodes.

Abstract translation: 提供用于高压针ESD保护的双向背对背堆叠SCR，制造方法和设计结构。 该器件包括对称双向背对背层叠可控硅整流器（SCR）。 背对背堆叠的SCR中的第一个的阳极连接到输入。 背对背堆叠的SCR的第二个的阳极连接到地面。 第一个和第二个背靠背堆叠的SCR的阴极连接在一起。 对称双向背靠背SCR中的每一个包括一对二极管，其引导电流朝向阴极，其在施加电压时有效地变得有效地反向偏置，并且从对称的双向后向SCR中的一个去激活元件， 另一个对称双向背对背SCR的二极管在与反向偏置二极管相同的方向上直流电流，反向SCR。

公开(公告)号：US20180308708A1

公开(公告)日：2018-10-25

申请号：US16016920

申请日：2018-06-25

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michel J. ABOU-KHALIL ,  Robert J. GAUTHIER, JR. ,  Tom C. LEE ,  Junjun LI ,  Souvick MITRA ,  Christopher S. PUTNAM ,  Robert R. ROBISON

IPC: H01L21/324 ,  H01L29/861 ,  H01L27/02 ,  H01L29/866

CPC classification number: H01L21/324 ,  H01L27/0255 ,  H01L29/8611 ,  H01L29/866

Abstract: Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an cathode on a substrate and a anode on the substrate. The anode is in electrical contact with the cathode. The method further includes forming a device between the cathode and the anode. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds.

公开(公告)号：US20160035716A1

公开(公告)日：2016-02-04

申请号：US14882548

申请日：2015-10-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michel J. ABOU-KHALIL ,  Robert J. GAUTHIER, Jr. ,  Tom C. LEE ,  Junjun LI ,  Souvick MITRA ,  Christopher S. PUTNAM ,  Robert R. ROBISON

IPC: H01L27/02 ,  H01L29/861

CPC classification number: H01L21/324 ,  H01L27/0255 ,  H01L29/8611 ,  H01L29/866

Abstract: Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a substrate and a P+ diffusion on the substrate. The P+ diffusion is in electrical contact with the N+ diffusion. The method further includes forming a device between the N+ diffusion and the P+ diffusion. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds.

公开(公告)号：US20150060939A1

公开(公告)日：2015-03-05

申请号：US14011789

申请日：2013-08-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James P. DI SARRO ,  Robert J. GAUTHIER, JR. ,  Tom C. LEE ,  Junjun LI ,  Souvick MITRA ,  Christopher S. PUTNAM

IPC: H01L27/02 ,  H01L29/74 ,  G06F17/50

CPC classification number: H01L27/0262 ,  G06F17/5063 ,  G06F17/5072 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66121 ,  H01L29/66393 ,  H01L29/7408 ,  H01L29/7412 ,  H01L29/742 ,  H01L29/7436 ,  H01L29/861

Abstract: An electrostatic discharge protection circuit is disclosed. A method of manufacturing a semiconductor structure includes forming a semiconductor controlled rectifier including a first plurality of fingers between an n-well body contact and an anode in an n-well, and a second plurality of fingers between a p-well body contact and a cathode in a p-well.

Abstract translation: 公开了一种静电放电保护电路。 一种制造半导体结构的方法包括在n阱中形成包括n阱体接触和阳极之间的第一多个指状物的半导体可控整流器，以及p阱体接触件和 阴极在p阱中。

公开(公告)号：US20140117452A1

公开(公告)日：2014-05-01

申请号：US14151884

申请日：2014-01-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michel J. ABOU-KHALIL ,  Robert J. GAUTHIER, JR. ,  Tom C. LEE ,  Junjun LI ,  Souvick MITRA ,  Christopher S. PUTNAM

IPC: H01L29/06

CPC classification number: H01L29/0688 ,  H01L27/0266 ,  H01L29/0615 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78696

Abstract: A method of forming a semiconductor structure, including forming a channel in a first portion of a semiconductor layer and forming a doped extension region in a second portion of the semiconductor layer abutting the channel on a first side and abutting an insulator material on a bottom side. The first portion of the semiconductor layer is thicker than the second portion of the semiconductor layer.

Abstract translation: 一种形成半导体结构的方法，包括在半导体层的第一部分中形成沟道并且在半导体层的第二部分中形成掺杂的延伸区域，所述第二部分邻近第一侧的沟道并且邻接底部的绝缘体材料 。 半导体层的第一部分比半导体层的第二部分厚。

公开(公告)号：US20140001599A1

公开(公告)日：2014-01-02

申请号：US14013409

申请日：2013-08-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Tom C. LEE ,  John C. MALINOWSKI ,  Anthony K. STAMPER

IPC: H01L49/02

CPC classification number: H01L28/20 ,  H01C7/006 ,  H01C17/075 ,  H01L21/7685 ,  H01L23/5228 ,  H01L23/53295 ,  H01L24/11 ,  H01L28/24 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/013

Abstract: Disclosed are methods for forming a thin film resistor and terminal bond pad simultaneously. A method includes simultaneously forming a terminal bond pad on a terminal wire and a thin film resistor on two other wires.

Abstract translation: 公开了同时形成薄膜电阻器和端子接合焊盘的方法。 一种方法包括在端子线上同时形成端子接合焊盘和在另外两条导线上形成薄膜电阻器。