-
1.发明授权公开(公告)号：US10249714B2
公开(公告)日：2019-04-02
申请号：US15634411
申请日：2017-06-27
发明人： Dechao Guo , Shogo Mochizuki , Andreas Scholze , Chun-Chen Yeh
IPC分类号： H01L29/08 , H01L21/8234 , H01L29/66 , H01L29/78 , H01L29/165 , H01L21/225 , H01L21/324 , H01L27/088 , H01L29/267
摘要： A semiconductor device including a gate structure on a channel region portion of a fin structure, and at least one of an epitaxial source region and an epitaxial drain region on a source region portion and a drain region portion of the fin structure. At least one of the epitaxial source region portion and the epitaxial drain region portion include a first concentration doped portion adjacent to the fin structure, and a second concentration doped portion on the first concentration doped portion. The second concentration portion has a greater dopant concentration than the first concentration doped portion. An extension dopant region extending into the channel portion of the fin structure having an abrupt dopant concentration gradient of n-type or p-type dopants of 7 nm per decade or greater.
-
2.发明授权公开(公告)号：US09991255B2
公开(公告)日：2018-06-05
申请号：US14661590
申请日：2015-03-18
发明人： Hong He , Shogo Mochizuki , Chiahsun Tseng , Chun-Chen Yeh , Yunpeng Yin
IPC分类号： H01L27/088 , H01L29/04 , H01L29/06 , H01L29/78 , H01L29/66 , H01L21/02 , H01L21/306 , H01L21/8234 , H01L29/08
CPC分类号： H01L27/0886 , H01L21/02271 , H01L21/0257 , H01L21/30604 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L29/045 , H01L29/0649 , H01L29/0653 , H01L29/0847 , H01L29/66545 , H01L29/66795 , H01L29/6681 , H01L29/785 , H01L29/7851
摘要： Semiconductor devices having non-merged fin extensions. A semiconductor device includes fins formed in trenches in an insulator layer, each of the fins having a uniform crystal orientation and a fin cap in a source and drain region that extends vertically and laterally beyond the trench. The fin caps of the respective fins are separate from one another.
-
3.发明授权公开(公告)号：US09484440B2
公开(公告)日：2016-11-01
申请号：US14752095
申请日：2015-06-26
发明人： Hong He , Shogo Mochizuki , Chiahsun Tseng , Chun-Chen Yeh , Yunpeng Yin
IPC分类号： H01L21/8234 , H01L21/762 , H01L29/78 , H01L29/66 , H01L29/04 , H01L27/088 , H01L29/06 , H01L21/02 , H01L21/306
CPC分类号： H01L27/0886 , H01L21/02271 , H01L21/0257 , H01L21/30604 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L29/045 , H01L29/0649 , H01L29/0653 , H01L29/0847 , H01L29/66545 , H01L29/66795 , H01L29/6681 , H01L29/785 , H01L29/7851
摘要： Semiconductor devices having non-merged fin extensions and methods for forming the same. Methods for forming semiconductor devices include forming fins on a substrate; forming a dummy gate over the fins, leaving a source and drain region exposed; etching the fins below a surface level of a surrounding insulator layer; and epitaxially growing fin extensions from the etched fins.
摘要翻译： 具有非合并翅片延伸的半导体器件及其形成方法。 用于形成半导体器件的方法包括在衬底上形成翅片; 在翅片上形成虚拟栅极，留下源极和漏极区域; 在低于周围绝缘体层的表面水平面处蚀刻散热片; 并从蚀刻的翅片外延生长翅片延伸部分。
-
4.发明授权Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction 有权形成用于finFET源极和漏极结泄漏减少的外延缓冲层的方法公开(公告)号：US09390976B2
公开(公告)日：2016-07-12
申请号：US14610653
申请日：2015-01-30
发明人： Dechao Guo , Shogo Mochizuki , Andreas Scholze , Chun-Chen Yeh
IPC分类号： H01L21/8238 , H01L21/8234 , H01L29/66 , H01L29/78 , H01L29/08 , H01L29/267 , H01L29/165
CPC分类号： H01L29/0847 , H01L21/2252 , H01L21/324 , H01L21/823418 , H01L21/823431 , H01L21/823437 , H01L27/0886 , H01L29/08 , H01L29/0843 , H01L29/086 , H01L29/0869 , H01L29/0878 , H01L29/0886 , H01L29/165 , H01L29/267 , H01L29/66 , H01L29/66545 , H01L29/66636 , H01L29/66681 , H01L29/66795 , H01L29/7816 , H01L29/7833 , H01L29/7848 , H01L29/7851
摘要： A method of forming a semiconductor device that includes forming a fin structure, and forming an undoped epitaxial semiconductor material on the fin structure. A first portion of undoped epitaxial semiconductor material is formed on the sidewall of at least one of a source region portion and a drain region portion of the fin structure. A second portion of the undoped epitaxial semiconductor material is formed on the recessed surface of a bulk semiconductor substrate that is present at the base of the fin structure. The method further includes forming a doped epitaxial semiconductor material on the undoped epitaxial semiconductor material. The undoped epitaxial semiconductor material and the doped epitaxial semiconductor material provide a source region and drain region.
摘要翻译： 一种形成半导体器件的方法，包括形成鳍结构，并在鳍结构上形成未掺杂的外延半导体材料。 未掺杂的外延半导体材料的第一部分形成在翅片结构的源区域部分和漏极区域部分中的至少一个的侧壁上。 未掺杂的外延半导体材料的第二部分形成在存在于鳍结构的基部的体半导体衬底的凹陷表面上。 该方法还包括在未掺杂的外延半导体材料上形成掺杂的外延半导体材料。 未掺杂的外延半导体材料和掺杂的外延半导体材料提供源极区和漏极区。
-
公开(公告)号：US10312377B2
公开(公告)日：2019-06-04
申请号：US15291137
申请日：2016-10-12
IPC分类号： H01L29/78 , H01L29/786 , H01L29/66 , H01L29/417 , H01L29/423 , H01L21/324 , H01L29/06 , H01L21/306 , H01L21/8234 , H01L29/10
摘要： Transistors including one or more semiconductor fins formed on a substrate. The one or more semiconductor fins are thinner in a channel region than in source and drain regions and have rounded corners. There is a gate stack on the channel region of the one or more semiconductor fins.
-
公开(公告)号：US09666726B2
公开(公告)日：2017-05-30
申请号：US14949430
申请日：2015-11-23
IPC分类号： H01L21/324 , H01L29/66 , H01L29/786 , H01L29/78 , H01L29/417 , H01L29/423 , H01L29/06
CPC分类号： H01L29/78696 , H01L21/30604 , H01L21/3247 , H01L21/823425 , H01L21/823431 , H01L29/0673 , H01L29/0676 , H01L29/1037 , H01L29/41733 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/66795 , H01L29/66818 , H01L29/7831 , H01L29/785 , H01L29/7854 , H01L29/7856
摘要： Transistors and methods for fabricating the same include annealing channel portions of one or more semiconductor fins that are uncovered by a protective layer in a gaseous environment to reduce fin width, to produce a fin profile that is widest at the bottom and tapers toward the top, and to round corners of the one or more semiconductor fins.
-
公开(公告)号：US09105663B1
公开(公告)日：2015-08-11
申请号：US14168175
申请日：2014-01-30
申请人： International Business Machines Corporation , Renesas Electronics Corporation , STMicroelectronics, Inc.
发明人： Kangguo Cheng , Ali Khakifirooz , Nicolas Loubet , Shogo Mochizuki , Alexander Reznicek , Raghavasimhan Sreenivasan , Chun-Chen Yeh
IPC分类号： H01L27/12 , H01L29/66 , H01L21/225 , H01L29/78
CPC分类号： H01L29/66795 , H01L21/2254 , H01L21/30604 , H01L21/3065 , H01L29/7841 , H01L29/7848 , H01L29/785
摘要： The present disclosure generally provides for a method of forming a FinFET with a silicon germanium (SiGe) stressor, in addition to a FinFET structure obtained from embodiments of the method. The method can include forming a semiconductor fin on a buried insulator layer; forming a gate structure on the semiconductor fin; forming a silicon germanium (SiGe) layer on the buried insulator layer, wherein the SiGe layer contacts the semiconductor fin; and heating the SiGe layer, wherein the heating diffuses germanium (Ge) into the semiconductor fin.
摘要翻译： 本公开通常提供了除了由该方法的实施例获得的FinFET结构之外还形成具有硅锗（SiGe）应力源的FinFET的方法。 该方法可以包括在掩埋绝缘体层上形成半导体鳍片; 在半导体鳍片上形成栅极结构; 在所述掩埋绝缘体层上形成硅锗层（SiGe），其中所述SiGe层接触所述半导体鳍片; 并加热SiGe层，其中加热使锗（Ge）扩散到半导体鳍片中。
-
公开(公告)号：US20150214338A1
公开(公告)日：2015-07-30
申请号：US14168175
申请日：2014-01-30
申请人： International Business Machines Corporation , STMicroelectronics, Inc. , Renesas Electronics Corporation
发明人： Kangguo Cheng , Ali Khakifirooz , Nicolas Loubet , Shogo Mochizuki , Alexander Reznicek , Raghavasimhan Sreenivasan , Chun-Chen Yeh
IPC分类号： H01L29/66 , H01L29/78 , H01L21/225
CPC分类号： H01L29/66795 , H01L21/2254 , H01L21/30604 , H01L21/3065 , H01L29/7841 , H01L29/7848 , H01L29/785
摘要： The present disclosure generally provides for a method of forming a FinFET with a silicon germanium (SiGe) stressor, in addition to a FinFET structure obtained from embodiments of the method. The method can include forming a semiconductor fin on a buried insulator layer; forming a gate structure on the semiconductor fin; forming a silicon germanium (SiGe) layer on the buried insulator layer, wherein the SiGe layer contacts the semiconductor fin; and heating the SiGe layer, wherein the heating diffuses germanium (Ge) into the semiconductor fin.
摘要翻译： 本公开通常提供了除了由该方法的实施例获得的FinFET结构之外还形成具有硅锗（SiGe）应力源的FinFET的方法。 该方法可以包括在掩埋绝缘体层上形成半导体鳍片; 在半导体鳍片上形成栅极结构; 在所述掩埋绝缘体层上形成硅锗层（SiGe），其中所述SiGe层接触所述半导体鳍片; 并加热SiGe层，其中加热使锗（Ge）扩散到半导体鳍片中。
-
公开(公告)号：US09059002B2
公开(公告)日：2015-06-16
申请号：US14011186
申请日：2013-08-27
发明人： Hong He , Shogo Mochizuki , Chiahsun Tseng , Chun-Chen Yeh , Yunpeng Yin
CPC分类号： H01L27/0886 , H01L21/02271 , H01L21/0257 , H01L21/30604 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L29/045 , H01L29/0649 , H01L29/0653 , H01L29/0847 , H01L29/66545 , H01L29/66795 , H01L29/6681 , H01L29/785 , H01L29/7851
摘要： Semiconductor devices having non-merged fin extensions and methods for forming the same. Methods for forming semiconductor devices include forming fins on a substrate; forming a dummy gate over the fins, leaving a source and drain region exposed; etching the fins below a surface level of a surrounding insulator layer; and epitaxially growing fin extensions from the etched fins.
摘要翻译： 具有非合并翅片延伸的半导体器件及其形成方法。 用于形成半导体器件的方法包括在衬底上形成翅片; 在翅片上形成虚拟栅极，留下源极和漏极区域暴露; 在低于周围绝缘体层的表面水平面处蚀刻散热片; 并从蚀刻的翅片外延生长翅片延伸部分。
-
公开(公告)号：US20150061015A1
公开(公告)日：2015-03-05
申请号：US14011186
申请日：2013-08-27
发明人： Hong He , Shogo Mochizuki , Chiahsun Tseng , Chun-Chen Yeh , Yunpeng Yin
CPC分类号： H01L27/0886 , H01L21/02271 , H01L21/0257 , H01L21/30604 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L29/045 , H01L29/0649 , H01L29/0653 , H01L29/0847 , H01L29/66545 , H01L29/66795 , H01L29/6681 , H01L29/785 , H01L29/7851
摘要： Semiconductor devices having non-merged fin extensions and methods for forming the same. Methods for forming semiconductor devices include forming fins on a substrate; forming a dummy gate over the fins, leaving a source and drain region exposed; etching the fins below a surface level of a surrounding insulator layer; and epitaxially growing fin extensions from the etched fins.
-
-
-
-
-
-
-
-
-
搜索结果
390 条记录 (耗时 0.023 秒)
