摘要:
An optical filter is formed from at least two gratings (102,103) located in a waveguide region (104) of a` semiconductor optical device (101). Each grating has a multiple peak optical passband. The gratings are spaced apart in the waveguide region and form an optical cavity having a comb-filter characteristic. The gratings may be located in the active region of an optical gain element and in a preferred example are superstructure gratings (SSGs). A number of filters may be joined together in series.
摘要:
An optical filter is formed from at least two grating located in a waveguide region of a semiconductor optical device. Each grating has a multiple peak optical passband. The gratings are spaced apart in the waveguide region and form an optical cavity having a comb-filter characteristic. The gratings may be located in the active region of an optical gain element and in a preferred example are superstructure gratings (SSGs). A number of filters may be joined together in series.
摘要:
The stress due to contact between a probe and a measurement sample is improved when using a microcontact prober having a conductive nanotube, nanowire, or nanopillar probe, the insulating layer at the contact interface is removed, thereby the contact resistance is reduced, and the performance of semiconductor device examination is improved. The microcontact prober comprises a cantilever probe in which each cantilever is provided with a nanowire, nanopillar, or a metal-coated carbon nanotube probe projecting by 50 to 100 nm from a holder provided at the fore end and a vibrating mechanism for vibrating the cantilever horizontally with respect to the subject. The fore end of the holder may project from the free end of the cantilever, and the fore end of the holder can be checked from above the cantilever.
摘要:
A circuit board having a graphene circuit according to the present invention includes: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having an average composition of Al2-xO3+x (where x is 0 or more), the patterned aluminum oxide film having a recessed region whose surface has one or more cone-shaped recesses therein; a graphene film preferentially grown only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film having a contact region that covers the recessed region, the graphene film growing parallel to a flat surface of the recessed region and parallel to an inner wall surface of each cone-shaped recess of the recessed region; and a patterned metal film, a part of the patterned metal film covering and having electrical contact with the contact region, the patterned metal film filling each recess covered by the graphene film.
摘要:
The object of the present invention is to enable the optical axis of an electron beam of a field emission electron gun mounting thereon an electron gun composed of a fibrous carbon material to be adjusted easily. Moreover, it is also to obtain an electron beam whose energy spread is narrower than that of the electron gun. Further, it is also to provide a high resolution electron beam applied device mounting thereon the field emission electron gun. The means for achieving the objects of the present invention is in that the fibrous carbon material is coated with a material having a band gap, in the field emission electron gun including an electron source composed of a fibrous carbon material and an electrically conductive base material for supporting the fibrous carbon material, an extractor for field-emitting electrons, and an accelerator for accelerating the electrons. Moreover, it is also to apply the field emission electron gun to various kinds of electron beam applied devices.
摘要:
An electron emitting element having a cap portion 103 with a closed structure and a columnar axis portion 101a comprising a tubular material composed mostly of carbon and a conductive base material for immobilizing the tubular material, characterized in that; the cap portion 103 includes a plurality of five-membered ring structures 104 made by atoms which constitute the tubular material and the distance between the five-membered ring structures 104 is 30 nm or more.
摘要:
In an image display apparatus using an FED or an organic EL element, image display that is high in illumination uniformity and high in image quality can be performed. A display element with a matrix structure which conducts linear sequential driving which determines the luminance by a current is used, a threshold voltage of a cathode line immediately before one select period has been terminated where a control electrode line is sequentially driven is measured by a threshold voltage measuring section, the measured threshold voltage is recorded for each of the pixels, and a driving signal at the time of selecting the pixel is corrected by using the value of the recorded threshold voltage, to thereby control electric charge that is emitted from a cathode.
摘要:
A flat panel display having electron sources capable is of emitting electrons uniformly within the display surface. The flat panel display includes a rear panel formed by a rear substrate. Cathode electrodes are formed on the inner surface of the rear substrate. Layers forming the electron sources consist of carbon nanotubes and are formed on the cathode electrodes. The surfaces of layers of the electron sources are bristled with the carbon nanotubes. Multi-walled and single-walled carbon nanotubes are dispersed in the layers of the electron sources.
摘要:
An information processor of a high reliability and a high recording density, and a blue color, blue-violet color and violet color based semiconductor light emitting device operable at a low threshold current density, used for the same, are provided. An optical information processor of a high reliability and a high recording density enables a moving picture, such as a high-definition television picture, to be recorded and reproduced satisfactorily. A barrier layer in a quantum-well active layer of a semiconductor light emitting device is doped with n-type impurities at a high density. Alternatively, the face orientation of a quantum-well active layer of a semiconductor light emitting device is a plane inclined from the (0001) plane, whereby the threshold current value of the semiconductor light emitting device can be decreased. The semiconductor light emitting device is typified by a gallium nitride based compound semiconductor laser device.
摘要:
An electron source is implemented which has a lower work function of an electron emission surface, yields emitted electrons of a narrower energy bandwidth and higher current density, and lasts longer than existing Zr/O/W electron sources. Further, an electron microscope which yields an image of higher-resolution in a shorter time and an electron beam lithography device which yields higher throughput are also provided. The electron source comprises a needle-shaped electrode made of metal having its tip in a needle shape, a heating body which heats up the needle-shaped electrode, and a diffusion source capable of being heated up by the heating body and made of a mixture of barium composite containing oxygen and carbon particles.
摘要翻译:实现了具有较低的电子发射表面功函数的电子源,产生较窄的能带宽和较高电流密度的发射电子,并且比现有的Zr / O / W电子源持续时间更长。 此外,还提供了在更短时间内产生更高分辨率的图像的电子显微镜以及产生较高产量的电子束光刻装置。 电子源包括由针尖形状的金属构成的针状电极,加热针状电极的加热体和能够被加热体加热并由混合物构成的扩散源 的含有氧和碳颗粒的钡复合物。