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    Material moisture content adjustment method
    1.
    发明授权
    Material moisture content adjustment method 有权
    材料含水量调节方法

    公开(公告)号：US08066422B2

    公开(公告)日：2011-11-29

    申请号：US11909499

    申请日：2006-03-27

    申请人： Ichizou Kobayashi ,  Takeshi Sasakura ,  Toshiyuki Tanaka ,  Katsuhiro Uemoto ,  Makoto Nakajima

    发明人： Ichizou Kobayashi ,  Takeshi Sasakura ,  Toshiyuki Tanaka ,  Katsuhiro Uemoto ,  Makoto Nakajima

    IPC分类号： B01F15/06 ,  B01F15/02 ,  B01F3/18 ,  B01F3/12 ,  B01F3/20 ,  B01F3/22 ,  B28C3/00 ,  C09K17/02 ,  G21F9/36

    CPC分类号： B28C7/0038 ,  B01F3/1221 ,  B01F3/186 ,  B01F3/20 ,  B01F3/2014 ,  B01F3/2064 ,  B01F3/2078 ,  B01F3/22 ,  B01F5/0475 ,  B01F5/0478 ,  B28C3/00 ,  B28C5/468 ,  B28C7/024 ,  B28C7/026 ,  C04B33/04 ,  C04B35/6263 ,  G21F9/162 ,  G21F9/34

    摘要： When making moisture content adjustment by adding liquid such as water to a raw material such as pulverulent material including bentonite, uniform mixing of the liquid such as water with the raw material is given with relatively simple facilities, moisture content adjustment of a large quantity of raw materials is attainable, and besides, a material having satisfactory performances such as impermeability is obtainable through uniform moisture content adjustment. Within a mixing tank (1) configured with a normal powder mixer kept at low temperatures, pulverulent bentonite (A) and fine granular ice (B) are stirred and mixed. Stirring and mixing of the fellow pulverulent materials are adapted to uniformly mix the pulverulent bentonite (A) and the fine granular ice (B), enabling uniformly moisture content-adjusted bentonite to be obtained. A liquid-nitrogen gas bomb (21), for instance, is connected to the mixing tank (1), causing the inside of the mixing tank to be kept at low temperatures with nitrogen gas supplied from the bomb, before putting the prepared fine granular ice (B) through an inlet port (20).

    摘要翻译： 当通过向诸如膨润土的粉末材料等原料添加水等水分进行水分含量调节时，以比较简单的设备使水等液体与原料均匀混合，大量原料 可以获得材料，此外，通过均匀的含水量调节可获得具有令人满意的性能如不渗透性的材料。 在配置有保持在低温下的普通粉末混合器的混合罐（1）中，搅拌混合粉状膨润土（A）和细粒状冰（B）。 搅拌和混合粉末状材料适于均匀混合粉状膨润土（A）和细粒状冰（B），从而可获得均匀的含水量调节膨润土。 例如，将液氮气体炸弹（21）连接到混合罐（1），在将制备好的细颗粒 冰（B）通过入口（20）。

    MATERIAL MOISTURE CONTENT ADJUSTMENT METHOD
    2.
    发明申请
    MATERIAL MOISTURE CONTENT ADJUSTMENT METHOD 有权
    材料水分含量调整方法

    公开(公告)号：US20090016149A1

    公开(公告)日：2009-01-15

    申请号：US11909499

    申请日：2006-03-27

    申请人： Ichizou Kobayashi ,  Takeshi Sasakura ,  Toshiyuki Tanaka ,  Katsuhiro Uemoto ,  Makoto Nakajima

    发明人： Ichizou Kobayashi ,  Takeshi Sasakura ,  Toshiyuki Tanaka ,  Katsuhiro Uemoto ,  Makoto Nakajima

    IPC分类号： B01F15/06

    CPC分类号： B28C7/0038 ,  B01F3/1221 ,  B01F3/186 ,  B01F3/20 ,  B01F3/2014 ,  B01F3/2064 ,  B01F3/2078 ,  B01F3/22 ,  B01F5/0475 ,  B01F5/0478 ,  B28C3/00 ,  B28C5/468 ,  B28C7/024 ,  B28C7/026 ,  C04B33/04 ,  C04B35/6263 ,  G21F9/162 ,  G21F9/34

    摘要： When making moisture content adjustment by adding liquid such as water to a raw material such as pulverulent material including bentonite, uniform mixing of the liquid such as water with the raw material is given with relatively simple facilities, moisture content adjustment of a large quantity of raw materials is attainable, and besides, a material having satisfactory performances such as impermeability is obtainable through uniform moisture content adjustment. Within a mixing tank (1) configured with a normal powder mixer kept at low temperatures, pulverulent bentonite (A) and fine granular ice (B) are stirred and mixed. Stirring and mixing of the fellow pulverulent materials are adapted to uniformly mix the pulverulent bentonite (A) and the fine granular ice (B), enabling uniformly moisture content-adjusted bentonite to be obtained. A liquid-nitrogen gas bomb (21), for instance, is connected to the mixing tank (1), causing the inside of the mixing tank to be kept at low temperatures with nitrogen gas supplied from the bomb, before putting the prepared fine granular ice (B) through an inlet port (20).

    摘要翻译： 当通过向诸如膨润土的粉末材料等原料添加水等水分进行水分含量调节时，以比较简单的设备使水等液体与原料均匀混合，大量原料 可以获得材料，此外，通过均匀的含水量调节可获得具有令人满意的性能如不渗透性的材料。 在配置有保持在低温下的普通粉末混合器的混合罐（1）中，搅拌混合粉状膨润土（A）和细粒状冰（B）。 搅拌和混合粉末状材料适于均匀混合粉状膨润土（A）和细粒状冰（B），从而可获得均匀的含水量调节膨润土。 例如，将液氮气体炸弹（21）连接到混合罐（1），在将制备好的细颗粒 冰（B）通过入口（20）。

    Silicon-containing composition for formation of resist underlayer film, which contains organic group containing protected aliphatic alcohol
    5.
    发明授权
    Silicon-containing composition for formation of resist underlayer film, which contains organic group containing protected aliphatic alcohol 有权
    用于形成抗蚀剂下层膜的含硅组合物，其含有含有保护的脂族醇的有机基团

    公开(公告)号：US09196484B2

    公开(公告)日：2015-11-24

    申请号：US13825158

    申请日：2011-09-14

    申请人： Satoshi Takeda ,  Makoto Nakajima ,  Yuta Kanno

    发明人： Satoshi Takeda ,  Makoto Nakajima ,  Yuta Kanno

    IPC分类号： H01L21/311 ,  H01L21/033 ,  G03F7/075 ,  G03F7/09 ,  C09D183/04 ,  C08G77/14 ,  C08G77/16

    CPC分类号： H01L21/0332 ,  C08G77/14 ,  C08G77/16 ,  C09D183/04 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094

    摘要： Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.

    摘要翻译： 本文描述了用于形成用于溶剂可显影抗蚀剂的下层膜的组合物。 这些组合物可以包括具有与含有保护的脂族醇基的有机基团键合的硅原子的水解性有机硅烷，可水解的有机硅烷的水解产物，可水解的有机硅烷的水解缩合产物，或其组合和溶剂。 该组合物可以形成抗蚀剂下层膜，该抗蚀剂下层膜包括可水解的有机硅烷，可水解的有机硅烷的水解产物，可水解的有机硅烷的水解缩合产物或其组合，硅烷化合物中硅原子与硅原子键合的硅原子 相对于硅原子总量，含有保护的脂族醇基的有机基团的比例为0.1〜40摩尔％。 还描述了将组合物施加到半导体衬底上并烘烤该组合物以形成抗蚀剂下层膜的方法。

    Structure for suppressing flow vibration of instrumentation guide tube
    6.
    发明授权
    Structure for suppressing flow vibration of instrumentation guide tube 有权
    用于抑制仪表导管流动振动的结构

    公开(公告)号：US08903032B2

    公开(公告)日：2014-12-02

    申请号：US12527484

    申请日：2008-02-22

    申请人： Nobuki Uda ,  Shigeyuki Watanabe ,  Kazuo Hirota ,  Hideyuki Sakata ,  Hideyuki Morita ,  Makoto Nakajima ,  Chikara Kurimura ,  Toshio Ichikawa

    发明人： Nobuki Uda ,  Shigeyuki Watanabe ,  Kazuo Hirota ,  Hideyuki Sakata ,  Hideyuki Morita ,  Makoto Nakajima ,  Chikara Kurimura ,  Toshio Ichikawa

    IPC分类号： G21C7/06 ,  G21C17/10 ,  G21C17/08 ,  G21C3/322

    CPC分类号： G21C17/10 ,  G21C3/322 ,  G21C17/08 ,  G21Y2002/207 ,  G21Y2002/303 ,  G21Y2004/30

    摘要： An upper hole 37A and a lower hole 37B are provided at two positions, namely, upper and lower portions, of a side surface of a guide tube 27, and a thimble tube 22 is pressed against an inner circumferential surface of the guide tube 27, by a differential pressure between coolant inside and outside the upper hole 37A and the lower hole 37B. It is preferable that an upper pressure adjustment hole and a lower pressure adjustment hole are provided at two positions, namely, upper and lower portions, of a side surface of an upper core support column 21, and a coolant flowing into the guide tube from an upper end of the guide tube flows out to the outside from inside the guide tube through a gap between the thimble tube and the upper hole, and also flows out to the outside from inside the upper core support column through the upper pressure adjustment hole, and a coolant flowing into the guide tube from a lower end of the guide tube flows out to the outside from inside the guide tube through a gap between the thimble tube and the lower hole, and also flows out to the outside from inside the upper core support column through the lower pressure adjustment hole.

    摘要翻译： 在引导管27的侧面的两个位置，即上下部分设置有上孔37A和下孔37B，并且将套管22压靠在引导管27的内周面上， 通过上部孔37A和下部孔37B的内部和外部的冷却剂之间的压力差。 优选的是，上压力调节孔和下压力调节孔设置在上芯支撑柱21的侧表面的两个位置，即上部和下部，以及从上部芯支撑柱21的侧表面流入导管的冷却剂 引导管的上端通过引导管和上孔之间的间隙从导管的内部流出到外部，并且还通过上压力调节孔从上芯支撑柱的内部流出到外部，并且 从引导管的下端流入引导管的冷却剂通过引导管和下孔之间的间隙从引导管的内部流出到外部，并且还从上部芯支撑体内部流出到外部 柱通过下压力调节孔。

    Composition for forming resist underlayer film for lithography and production method of semiconductor device
    8.
    发明授权
    Composition for forming resist underlayer film for lithography and production method of semiconductor device 失效
    用于形成用于光刻的抗蚀剂下层膜的组合物和半导体器件的制造方法

    公开(公告)号：US08283103B2

    公开(公告)日：2012-10-09

    申请号：US12673926

    申请日：2008-08-26

    申请人： Hikaru Imamura ,  Yasushi Sakaida ,  Makoto Nakajima ,  Satoshi Takei

    发明人： Hikaru Imamura ,  Yasushi Sakaida ,  Makoto Nakajima ,  Satoshi Takei

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/11 ,  G03F7/40

    CPC分类号： G03F7/11 ,  C08G77/60 ,  C09D183/16 ,  G03F7/0752

    摘要： There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.

    摘要翻译： 提供一种用于形成可均匀涂布的抗蚀剂下层膜的组合物，并且在热固化期间抑制升华。 还提供了一种用于形成抗蚀剂下层膜的组合物，其具有相对于其上施加的抗蚀剂的干蚀刻的高选择比。 一种用于形成光刻用抗蚀剂下层膜的组合物，包括：具有式（1）的单元结构的聚硅烷化合物：（其中R 1和R 2独立地为-X-Y（其中X为氧原子，C1- 18亚烷基或-OC n H 2n - （其中n为1至18的整数）和Y为内酯环或金刚烷环），或者R 1和R 2中的一个为-X-Y基团，另一个为 是芳基，甲基，乙基或C 3-6环烷基）; 和有机溶剂。

    RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND
    9.
    发明申请
    RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND 有权
    含有硫化物粘合剂的耐下层膜形成组合物

    公开(公告)号：US20120070994A1

    公开(公告)日：2012-03-22

    申请号：US13375517

    申请日：2010-05-28

    申请人： Yuta Kanno ,  Makoto Nakajima ,  Wataru Shibayama

    发明人： Yuta Kanno ,  Makoto Nakajima ,  Wataru Shibayama

    IPC分类号： H01L21/312 ,  C07F7/18 ,  B32B9/00 ,  C08K5/548

    CPC分类号： G03F7/11 ,  G03F7/0752 ,  G03F7/091 ,  Y10T428/31663

    摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask; and a forming method of a resist pattern using the underlayer film forming composition for lithography. A resist underlayer film forming composition for lithography comprising: as a silicon atom-containing compound, a hydrolyzable organosilane containing a sulfur atom-containing group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein in the whole silicon atom-containing compound, the ratio of a sulfur atom to a silicon atom is less than 5% by mole. The hydrolyzable organosilane is preferably a compound of Formula (1): [R1aSi(R2)3-a]bR3 wherein R3 has a partial structure of Formula (2): R4—S—R5.

    摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成组合物; 以及使用用于光刻的下层膜形成组合物的抗蚀剂图案的形成方法。 一种用于光刻的抗蚀剂下层膜形成组合物，包括：含硅原子的化合物，含有含硫原子的基团的可水解的有机硅烷，其水解产物或其水解缩合产物，其中在整个含硅原子的 化合物，硫原子与硅原子的比例小于5摩尔％。 可水解的有机硅烷优选为式（1）的化合物：[R a Si（R 2）3-a] b R 3，其中R 3具有式（2）的部分结构：R4-S-R5。

    COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE
    10.
    发明申请
    COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE 失效
    用于形成电阻膜的薄膜的组合物和半导体器件的制造方法

    公开(公告)号：US20110045404A1

    公开(公告)日：2011-02-24

    申请号：US12673926

    申请日：2008-08-26

    申请人： Hikaru Imamura ,  Yasushi Sakaida ,  Makoto Nakajima ,  Satoshi Takei

    发明人： Hikaru Imamura ,  Yasushi Sakaida ,  Makoto Nakajima ,  Satoshi Takei

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/11 ,  C08G77/60 ,  C09D183/16 ,  G03F7/0752

    摘要： There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.

    摘要翻译： 提供一种用于形成可均匀涂布的抗蚀剂下层膜的组合物，并且在热固化期间抑制升华。 还提供了一种用于形成抗蚀剂下层膜的组合物，其具有相对于其上施加的抗蚀剂的干蚀刻的高选择比。 一种用于形成光刻用抗蚀剂下层膜的组合物，包括：具有式（1）的单元结构的聚硅烷化合物：（其中R 1和R 2独立地为-X-Y（其中X为氧原子，C1- 18亚烷基或-OC n H 2n - （其中n为1至18的整数）和Y为内酯环或金刚烷环），或者R 1和R 2中的一个为-X-Y基团，另一个为 是芳基，甲基，乙基或C 3-6环烷基）; 和有机溶剂。