公开(公告)号：US06908512B2

公开(公告)日：2005-06-21

申请号：US10247895

申请日：2002-09-20

申请人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

发明人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

IPC分类号： B24B37/30 ,  B24B49/14 ,  C23C18/16 ,  H01L21/00 ,  H01L21/288 ,  H01L21/687 ,  G05C13/00

CPC分类号： C23C18/163 ,  B24B37/30 ,  B24B49/14 ,  C23C18/1678 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/67248 ,  H01L21/68785

摘要： A substrate holder has a disk-like body with a central recess having diameter smaller than the diameter of the substrate placed onto the upper surface of the holder. The substrate can be clamped in place by the clamps of the edge-grip mechanism or placed into a seat without the use of clamps. In both cases, the substrate forms a partial wall that confines the heating/cooling recess or chamber. The aforementioned recess is filled with a cooling or heating liquid (depending on the mode of metal deposition) selectively supplied from a liquid heating or cooling system. In order to ensure in the working chamber above the substrate a pressure slightly higher than the pressure in the cooling/heating recess, the working chamber is first filled with the working solution under the atmospheric pressure, and then the recess is filled with a heating or cooling liquid with simultaneous increase of pressure in the working chamber to a level slightly exceeding the pressure in the recess. The substrate holder of the invention provides direct heat/cool-exchange between the heating/cooling medium and the substrate and allows instantaneous change of temperature of the heating/cooling liquid.

摘要翻译： 衬底保持器具有盘状体，其具有直径小于放置在保持器的上表面上的衬底的直径的中心凹部。 基板可以通过边缘抓握机构的夹具夹紧就位，或者不使用夹具而放置在座中。 在这两种情况下，基板形成限制加热/冷却凹部或室的局部壁。 上述凹部填充有从液体加热或冷却系统选择性地供应的冷却或加热液体（取决于金属沉积的模式）。 为了确保在基板上方的工作室内的压力略高于冷却/加热凹槽中的压力，工作室首先在大气压力下被工作溶液填充，然后用加热或 冷却液体，同时将工作室中的压力提高到稍微超过凹部中的压力的​​水平。 本发明的衬底保持器在加热/冷却介质和衬底之间提供直接的热/冷交换，并且允许加热/冷却液体的温度的瞬时变化。

公开(公告)号：US20120213914A1

公开(公告)日：2012-08-23

申请号：US13408039

申请日：2012-02-29

申请人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

发明人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

IPC分类号： B05D5/12

CPC分类号： C23C18/1676 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288

摘要： An apparatus is provided having a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus also includes a solution heater and a control system for controlling temperature and pressure in the chamber. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

摘要翻译： 提供一种装置，其具有能够被密封并且能够承受增加的压力和高温的可关闭室。 该室具有用于供应各种处理液体的多个入口，例如沉积溶液，用于冲洗的水等，以及用于在压力下供应气体的端口。 该装置还包括解决方案加热器和用于控制室内的温度和压力的控制系统。 通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。 该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。 冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。

公开(公告)号：US08906446B2

公开(公告)日：2014-12-09

申请号：US13408039

申请日：2012-02-29

申请人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

发明人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

IPC分类号： C23C18/16 ,  H01L21/288

CPC分类号： C23C18/1676 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288

摘要： An apparatus is provided having a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus also includes a solution heater and a control system for controlling temperature and pressure in the chamber. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

摘要翻译： 提供一种装置，其具有能够被密封并且能够承受增加的压力和高温的可关闭室。 该室具有用于供应各种处理液体的多个入口，例如沉积溶液，用于冲洗的去离子水等，以及用于在压力下供应气体的端口。 该装置还包括解决方案加热器和用于控制室内的温度和压力的控制系统。 通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。 该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。 冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。

公开(公告)号：US08128987B2

公开(公告)日：2012-03-06

申请号：US11138531

申请日：2005-05-26

申请人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

发明人： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

IPC分类号： C23C18/16

CPC分类号： C23C18/1676 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288

摘要： A method for electroless deposition from a deposition solution in a working chamber, where the process can include heating the deposition solution to its boiling point and subsequently reducing the temperature of the deposition solution to a working temperature range that is between approximately 1% and approximately 25% below the boiling point of said solution under a predetermined pressure; and the process also can include heating the deposition solution while filling an enclosed area of the chamber such that the deposition solution reaches its boiling point immediately after the enclosed area is filled.

摘要翻译： 一种用于从工作室中的沉积溶液进行无电沉积的方法，其中该方法可以包括将沉积溶液加热至其沸点，随后将沉积溶液的温度降低至大约1％至大约25之间的工作温度范围 低于所述溶液在预定压力下的沸点％; 并且该方法还可以包括在填充室的封闭区域期间加热沉积溶液，使得沉积溶液在填充封闭区域之后立即达到其沸点。

公开(公告)号：US20120282483A1

公开(公告)日：2012-11-08

申请号：US13540036

申请日：2012-07-02

申请人： Igor C. Ivanov ,  Weiguo Zhang ,  Artur Kolics

发明人： Igor C. Ivanov ,  Weiguo Zhang ,  Artur Kolics

IPC分类号： C23C8/00 ,  B05D5/00 ,  B05D3/10 ,  B32B15/04

CPC分类号： H01L21/64 ,  C23C8/02 ,  C23C18/1605 ,  C23C18/1632 ,  C23C18/1683 ,  C23C18/1803 ,  C23C28/00 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/3455 ,  H01L21/288 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76874 ,  Y10T428/1241 ,  Y10T428/12493 ,  Y10T428/12549 ,  Y10T428/23 ,  Y10T428/24628

摘要： A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

摘要翻译： 提供了一种方法，其包括形成金属层并将金属层的至少一部分转化为水合金属氧化物层。 提供了另一种方法，其包括在另一电介质层上选择性地沉积电介质层并且选择性地沉积与电介质层相邻的金属层。 因此，形成微电子拓扑，其包括分别包括亲水和疏水材料的下层和上层的金属特征和相邻电介质部分。 本文还提供了包括具有单层的金属特征的地形，其中至少四个元件衬在下表面和金属特征的侧壁。 用于形成这种单层的流体可以通过配置成测量所有四个元素的浓度的测试设备进行分析。 在一些情况下，可以基于分析来调整流体的组成。

公开(公告)号：US06935638B2

公开(公告)日：2005-08-30

申请号：US10369878

申请日：2003-02-21

申请人： Igor C. Ivanov ,  Jonathan Weiguo Zhang

发明人： Igor C. Ivanov ,  Jonathan Weiguo Zhang

IPC分类号： B23B31/14 ,  B23B31/18 ,  H01L21/00 ,  H01L21/687 ,  B23B31/103

CPC分类号： H01L21/67126 ,  B23B31/14 ,  B23B31/18 ,  H01L21/68707 ,  H01L21/68728 ,  Y10T279/18 ,  Y10T279/24 ,  Y10T279/247

摘要： A universal substrate holder of the invention for treating wafer substrates in liquids is provided with a shaft and a rod slidingly inserted into the central opening of the shaft. The end of the shaft that protrudes into the bowl supports a base platform for the substrate, while the end of the rod that protrudes into the bowl has radial arms that rigidly support an annular plate with pins that can pass through the opening of the base platform so that they can support the substrate above the surface of the platform. The annular plate supports clamping jaws made in the form of two-arm levers with shorter arms and longer arms. The longer arms are heavier and therefore in the stationary state of the holder keep the jaws turned into an open position. When the shaft begins to rotate, the jaws are turned under the effect of centrifugal forces into positions of clamping the substrate with the shorter arms. When the rod is pulled down, the ends of the longer arms come into contact with the base platform and are turned into the clamping position. The substrate holder of the invention allows clamping and releasing of the substrate in positions of the substrate above the platform and in a position of the substrate on the base substrate, when the backside of the substrate is inaccessible to the process liquid.

摘要翻译： 用于处理液体中的晶片基板的本发明的通用基板保持器设置有滑动地插入轴的中心开口中的轴和杆。 突出到碗中的轴的端部支撑用于基底的基座，而突出到碗中的杆的端部具有径向臂，其刚性地支撑环形板，销可以穿过基座的开口 使得它们可以支撑平台表面上方的基板。 环形板支撑以双臂杠杆的形式制成的夹爪，其具有较短的臂和较长的臂。 较长的手臂较重，因此在保持架的静止状态下，保持夹爪变为打开位置。 当轴开始旋转时，夹爪在离心力的作用下转动到用较短的臂夹持基板的位置。 当杆被拉下时，较长臂的端部与基座平台接触并转动到夹紧位置。 本发明的衬底保持器允许当衬底的背面不可用于处理液体时，衬底在平台上方的位置和衬底在基底衬底上的位置的夹持和释放。

公开(公告)号：US06911067B2

公开(公告)日：2005-06-28

申请号：US10339260

申请日：2003-01-10

申请人： Artur Kolics ,  Nicolai Petrov ,  Chiu Ting ,  Igor C. Ivanov

发明人： Artur Kolics ,  Nicolai Petrov ,  Chiu Ting ,  Igor C. Ivanov

IPC分类号： C23C18/50 ,  C23C18/52

CPC分类号： C23C18/50

摘要： An electroless deposition solution of the invention for forming an alkali-metal-free coating on a substrate comprises a first-metal ion source for producing first-metal ions, a pH adjuster in the form of a hydroxide for adjusting the pH of the solution, a reducing agent, which reduces the first-metal ions into the first metal on the substrate, a complexing agent for keeping the first-metal ions in the solution, and a source of ions of a second element for generation of second-metal ions that improve the corrosion resistance of the aforementioned coating. The method of the invention consists of the following steps: preparing hydroxides of a metal such as Ni and Co by means of a complexing reaction, in which solutions of hydroxides of Ni and Co are obtained by displacing hydroxyl ions OH− beyond the external boundary of ligands of mono- or polydental complexants; preparing a complex composition based on a tungsten oxide WO3 or a phosphorous tungstic acid, such as H3[P(W3O10)4], as well as on the use of tungsten compounds for improving anti-corrosive properties of the deposited films; mixing the aforementioned solutions of salts of Co, Ni, or W and maintaining under a temperatures within the range of 20° C. to 100° C.; and carrying out deposition from the obtained mixed solution.

摘要翻译： 本发明的用于在基材上形成无碱金属的涂层的无电沉积溶液包括用于产生第一金属离子的第一金属离子源，用于调节溶液pH的氢氧化物形式的pH调节剂， 还原剂，其将第一金属离子还原成基底上的第一金属，用于将第一金属离子保持在溶液中的络合剂和用于产生第二金属离子的第二元素的离子源， 提高上述涂层的耐腐蚀性。 本发明的方法包括以下步骤：通过络合反应制备金属如Ni和Co的氢氧化物，其中通过置换羟基离子得到Ni和Co的氢氧化物溶液， SUP>超出单齿或多齿配位体配体的外界; 制备基于氧化钨WO 3或磷钨酸的复合组合物，例如H 3 [P（W 3 N）O _{10），以及使用钨化合物改善沉积膜的抗腐蚀性能; 将上述Co，Ni或W的盐溶液混合并保持在20℃至100℃的温度范围内。 并从所得混合溶液中进行沉积。}

公开(公告)号：US07883739B2

公开(公告)日：2011-02-08

申请号：US10462343

申请日：2003-06-16

申请人： Igor C. Ivanov ,  Weiguo Zhang ,  Artur Kolics

发明人： Igor C. Ivanov ,  Weiguo Zhang ,  Artur Kolics

IPC分类号： B05D5/12 ,  H01L21/4763

CPC分类号： H01L21/64 ,  C23C8/02 ,  C23C18/1605 ,  C23C18/1632 ,  C23C18/1683 ,  C23C18/1803 ,  C23C28/00 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/3455 ,  H01L21/288 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76874 ,  Y10T428/1241 ,  Y10T428/12493 ,  Y10T428/12549 ,  Y10T428/23 ,  Y10T428/24628

摘要： A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

摘要翻译： 提供了一种方法，其包括形成金属层并将金属层的至少一部分转化为水合金属氧化物层。 提供了另一种方法，其包括在另一电介质层上选择性地沉积电介质层，并且选择性地沉积与电介质层相邻的金属层。 因此，形成微电子拓扑，其包括分别包括亲水和疏水材料的下层和上层的金属特征和相邻电介质部分。 本文还提供了包括具有单层的金属特征的地形，其中至少四个元件衬在下表面和金属特征的侧壁。 用于形成这种单层的流体可以通过配置成测量所有四个元素的浓度的测试设备进行分析。 在一些情况下，可以基于分析来调整流体的组成。

公开(公告)号：US06846519B2

公开(公告)日：2005-01-25

申请号：US10242331

申请日：2002-09-13

申请人： Igor C. Ivanov ,  Jonathan Welgun Zhang ,  Artur Kolics

发明人： Igor C. Ivanov ,  Jonathan Welgun Zhang ,  Artur Kolics

IPC分类号： C23C18/16 ,  H01L21/00 ,  B05D1/18

CPC分类号： H01L21/67109 ,  C23C18/1619 ,  C23C18/1676 ,  C23C18/1678 ,  C23C18/168 ,  C23C18/1682

摘要： The method for electroless deposition of a coating material, which may be a metal, semiconductor, or dielectric, that is carried out at a relatively low temperature of the working solution compensated by an increased temperature on the substrate which is controlled by a heater built into the substrate chuck. A decrease in the temperature of the working solution prevents thermal decomposition of the solution and reduces formation of gas bubbles, normally generated at increased temperatures. Accumulation of bubbles on the surface of the substrate is further prevented due to upwardly-facing orientation of the treated surface of the substrate. The substrate holder is equipped with a substrate heater and a substrate cooler, that can be used alternatingly for quick heating or cooling of the substrate surface.

摘要翻译： 用于无电沉积涂覆材料的方法，其可以是金属，半导体或电介质，其在工作溶液的相对低的温度下进行，所述工作溶液由基板上升高的温度补偿，所述温度由内置的 基板卡盘。 工作溶液的温度降低可防止溶液的热分解，并减少通常在升高的温度下产生的气泡的形成。 由于衬底的处理表面的向上取向，进一步防止了衬底表面积聚的气泡。 衬底保持器配备有基板加热器和基板冷却器，其可以交替地用于快速加热或冷却基板表面。

公开(公告)号：US06794288B1

公开(公告)日：2004-09-21

申请号：US10345134

申请日：2003-05-05

申请人： Artur Kolics ,  Nicolai Petrov ,  Chiu Ting ,  Igor C. Ivanov

发明人： Artur Kolics ,  Nicolai Petrov ,  Chiu Ting ,  Igor C. Ivanov

IPC分类号： H01L2144

CPC分类号： H01L21/76849 ,  C23C18/1608 ,  C23C18/1834 ,  C23C18/50 ,  H01L21/288 ,  H01L21/7685 ,  H01L21/76855 ,  H01L21/76874

摘要： The method for selective deposition of Co—W—P system films onto copper with palladium-free activation consists of creating hydrogen-rich complexes on the metal surface prior to deposition. More specifically, the method consists of creating the aforementioned complexes on the copper surfaces prior to electroless deposition of a Co—W—P system films. This is achieved by contacting the copper surface with reducing agents for a short period of time and under an elevated temperature. Such reducing agents comprise a hypophosphorous-acid-based or borane-based reducing agents such as dimethylamine borane. Hypophosphorous acid is preferred since it is more compatible with the electroless deposition solution.

摘要翻译： Co-W-P系膜在铜上选择性沉积无钯活化的方法包括在沉积前在金属表面上产生富含氢的配合物。 更具体地，该方法包括在Co-W-P系膜的无电沉积之前在铜表面上产生上述配合物。 这是通过使铜表面与还原剂在短时间内和在高温下接触而实现的。 这种还原剂包括次磷酸或基于硼烷的还原剂如二甲胺硼烷。 次磷酸是优选的，因为它与无电解沉积溶液更相容。