Semiconductor device and method for manufacturing a semiconductor device
    1.
    发明授权
    Semiconductor device and method for manufacturing a semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号:US09356092B2

    公开(公告)日:2016-05-31

    申请号:US14025185

    申请日:2013-09-12

    CPC classification number: H01L29/06 H01L21/78 H01L29/0684

    Abstract: A method includes providing a semiconductor wafer including multiple semiconductor chips, forming a first scribe line on a frontside of the semiconductor wafer, wherein the first scribe line has a first width and separates semiconductor chips of the semiconductor wafer, forming a second scribe line on the frontside of the semiconductor wafer, wherein the second scribe line has a second width and separates semiconductor chips of the semiconductor wafer, wherein the first scribe line and the second scribe line intersect in a crossing area which is greater than a product of the first width and the second width, and plasma etching the semiconductor wafer in the crossing area.

    Abstract translation: 一种方法包括提供包括多个半导体芯片的半导体晶片,在半导体晶片的前侧形成第一划线,其中第一划线具有第一宽度并分离半导体晶片的半导体芯片,在第二划线上形成第二划线 其中所述第二划线具有第二宽度并且分离所述半导体晶片的半导体芯片,其中所述第一划线和所述第二划线在交叉区域相交,所述交叉区域大于所述第一宽度和 第二宽度,并且在交叉区域等离子体蚀刻半导体晶片。

    Semiconductor Device and Method for Manufacturing a Semiconductor Device
    3.
    发明申请
    Semiconductor Device and Method for Manufacturing a Semiconductor Device 有权
    半导体装置及半导体装置的制造方法

    公开(公告)号:US20150069576A1

    公开(公告)日:2015-03-12

    申请号:US14025185

    申请日:2013-09-12

    CPC classification number: H01L29/06 H01L21/78 H01L29/0684

    Abstract: A method includes providing a semiconductor wafer including multiple semiconductor chips, forming a first scribe line on a frontside of the semiconductor wafer, wherein the first scribe line has a first width and separates semiconductor chips of the semiconductor wafer, forming a second scribe line on the frontside of the semiconductor wafer, wherein the second scribe line has a second width and separates semiconductor chips of the semiconductor wafer, wherein the first scribe line and the second scribe line intersect in a crossing area which is greater than a product of the first width and the second width, and plasma etching the semiconductor wafer in the crossing area.

    Abstract translation: 一种方法包括提供包括多个半导体芯片的半导体晶片,在半导体晶片的前侧形成第一划线,其中第一划线具有第一宽度并分离半导体晶片的半导体芯片,在第二划线上形成第二划线 其中所述第二划线具有第二宽度并且分离所述半导体晶片的半导体芯片,其中所述第一划线和所述第二划线在交叉区域相交,所述交叉区域大于所述第一宽度和 第二宽度,并且在交叉区域等离子体蚀刻半导体晶片。

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