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    Forming a superjunction transistor device
    1.
    发明授权
    Forming a superjunction transistor device 有权

    公开(公告)号：US10553681B2

    公开(公告)日：2020-02-04

    申请号：US16104465

    申请日：2018-08-17

    申请人： Infineon Technologies Austria AG

    发明人： Hans Weber ,  Franz Hirler ,  Maximilian Treiber ,  Daniel Tutuc ,  Andreas Voerckel

    IPC分类号： H01L29/06 ,  H01L29/15 ,  H01L29/66 ,  H01L21/225 ,  H01L29/10 ,  H01L21/265 ,  H01L21/266 ,  H01L29/78

    摘要： A method includes forming first regions of a first doping type and second regions of a second doping type in first and second semiconductor layers such that the first and second regions are arranged alternately in at least one horizontal direction of the first and second semiconductor layers, and forming a control structure with transistor cells each including at least one body region, at least one source region and at least one gate electrode in the second semiconductor layer. Forming the first and second regions includes: forming trenches in the first semiconductor layer and implanting at least one of first and second type dopant atoms into sidewalls of the trenches; forming the second semiconductor layer on the first semiconductor layer such that the second layer fills the trenches; implanting at least one of first and second type dopant atoms into the second semiconductor layer; and at least one temperature process.

    Super-Junction Semiconductor Device Comprising Junction Termination Extension Structure and Method of Manufacturing
    3.
    发明申请
    Super-Junction Semiconductor Device Comprising Junction Termination Extension Structure and Method of Manufacturing 有权
    包含接线端接延伸结构和制造方法的超级结半导体器件

    公开(公告)号：US20160322490A1

    公开(公告)日：2016-11-03

    申请号：US15139664

    申请日：2016-04-27

    申请人： Infineon Technologies Austria AG

    发明人： Franz Hirler ,  Daniel Tutuc ,  Andreas Voerckel ,  Hans Weber

    IPC分类号： H01L29/78 ,  H01L29/417 ,  H01L29/167 ,  H01L21/266 ,  H01L29/66 ,  H01L29/06 ,  H01L29/36

    CPC分类号： H01L29/7811 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/66712

    摘要： A super-junction semiconductor device includes a junction termination area at a first surface of a semiconductor body and at least partly surrounding an active cell area. An inner part of the junction termination area is arranged between an outer part of the junction termination area and the active cell area. A charge compensation device structure includes first regions of a first conductivity type and second regions of a second conductivity type disposed alternately along a first lateral direction. First surface areas correspond to a projection of the first regions onto the first surface, and second surface areas correspond to a projection of the second regions onto the first surface. The super-junction semiconductor device further includes at least one of a first junction termination extension structure and a second junction termination extension structure.

    摘要翻译： 超结半导体器件包括在半导体本体的第一表面处的至少部分地围绕有源电池区域的接合端接区域。 连接终端区域的内部部分布置在接头终端区域的外部部分和活动单元区域之间。 电荷补偿装置结构包括第一导电类型的第一区域和沿着第一横向方向交替设置的第二导电类型的第二区域。 第一表面区域对应于第一区域在第一表面上的投影，第二表面区域对应于第二区域在第一表面上的投影。 超结半导体器件还包括第一连接端接延伸结构和第二结端接延伸结构中的至少一个。

    Charge-compensation device
    5.
    发明授权
    Charge-compensation device 有权

    公开(公告)号：US09825165B2

    公开(公告)日：2017-11-21

    申请号：US14973385

    申请日：2015-12-17

    申请人： Infineon Technologies Austria AG

    发明人： Hans Weber ,  Markus Schmitt ,  Andreas Voerckel

    IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/10

    CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/4238 ,  H01L29/7813

    摘要： A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area, a peripheral area arranged between the active area and the lateral edge, a drift region, first compensation regions forming respective first pn-junctions with the drift region, and second compensation regions extending from the first surface into the drift region and forming respective second pn-junctions with the drift region. The first compensation regions form in the active area a lattice comprising a first base vector having a first length. The second compensation regions have, in a horizontal direction parallel to the first surface, a horizontal width which decreases with an increasing vertical distance from the first surface and with a decreasing horizontal distance from the edge.

    CHARGE COMPENSATION DEVICE AND MANUFACTURING THEREFOR
    6.
    发明申请
    CHARGE COMPENSATION DEVICE AND MANUFACTURING THEREFOR 审中-公开
    充电补偿装置及其制造

    公开(公告)号：US20170005164A1

    公开(公告)日：2017-01-05

    申请号：US15264729

    申请日：2016-09-14

    申请人： Infineon Technologies Austria AG

    发明人： Hans Weber ,  Daniel Tutuc ,  Andreas Voerckel

    IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/40 ,  H01L21/308 ,  H01L21/266 ,  H01L21/78 ,  H01L29/66 ,  H01L29/10

    CPC分类号： H01L29/0634 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/308 ,  H01L21/768 ,  H01L21/78 ,  H01L23/585 ,  H01L29/0611 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/16 ,  H01L29/404 ,  H01L29/66712 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area, and a peripheral area arranged between the active area and the lateral edge. A source metallization is arranged on the first surface. A drain metallization is arranged opposite to the source metallization. The semiconductor body further includes a drift region in Ohmic contact with the drain metallization, and a plurality of compensation regions forming respective pn-junctions with the drift region, which are arranged in the active area and in the peripheral area, and are in Ohmic contact with the source metallization via respective body regions arranged in the active area and having a higher doping concentration than the compensation regions. In a horizontal cross-section substantially parallel to the first surface the compensation regions are at least in a respective portion shaped as a strip oriented in a direction which is tilted with respect to the lateral edge by a tilt angle.

    摘要翻译： 电荷补偿半导体器件包括半导体本体，其具有第一表面，在基本上平行于第一表面的水平方向上界定半导体本体的横向边缘，有源区域和布置在有源区域和侧边缘之间的周边区域 。 源金属化被布置在第一表面上。 漏极金属化被布置成与源极化金属化相对。 半导体本体还包括与漏极金属化欧姆接触的漂移区域，以及形成与漂移区域相应的pn结的多个补偿区域，其布置在有源区域和外围区域中并且处于欧姆接触 源极金属化通过布置在有源区域中并且具有比补偿区域更高的掺杂浓度的相应体区。 在基本上平行于第一表面的水平横截面中，补偿区域至少在形状为沿相对于侧边缘倾斜倾斜角度的方向定向的相应部分中。