PACKAGED INTEGRATED CIRCUIT DEVICE WITH RECESS STRUCTURE

    公开(公告)号:US20200066621A1

    公开(公告)日:2020-02-27

    申请号:US15752240

    申请日:2015-09-25

    Abstract: A packaged device (110) includes a substrate (114) and one or more contacts (118) disposed on a side of the substrate (114). Structures of the packaged device (110) define at least in part a recess region (120) that extends from the side of the substrate (114) and through the substrate (114), where one or more contacts (124) of a second hardware interface are disposed in the recess region (120). The one or more contacts (118) of the first hardware interface enable connection of the packaged device (110) to a printed circuit board. The one or more contacts (124) of the second hardware interface enable connection between one or more IC dies of the packaged device (110) and another IC die (150) that is a component of the packaged device (110) or of a different packaged device.

    JOINT CONNECTION OF CORNER NON-CRITICAL TO FUNCTION (NCTF) BALL FOR BGA SOLDER JOINT RELIABILITY (SJR) ENHANCEMENT

    公开(公告)号:US20220122907A1

    公开(公告)日:2022-04-21

    申请号:US17425227

    申请日:2019-02-22

    Abstract: Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a package substrate with a top surface, a corner portion, and a plurality of solder balls on the top surface of the package substrate. The semiconductor package also includes a pattern on the corner portion of the package substrate. The pattern may have a width substantially equal to a width of the solder balls. The pattern may also include a continuous line having solder materials. The semiconductor package may include a plurality of conductive pads on the package substrate. The conductive pads may be coupled to the pattern. The pattern may have a z-height that is substantially equal to a z-height of the solder balls, and have one or more outer edges, where the outer edges of the pattern are sidewalls. The sidewalls of the pattern may be substantially vertical or tapered sidewalls.

    INTERCONNECT STRUCTURE FABRICATED USING LITHOGRAPHIC AND DEPOSITION PROCESSES

    公开(公告)号:US20210057326A1

    公开(公告)日:2021-02-25

    申请号:US17053144

    申请日:2018-12-12

    Abstract: Embodiments described herein provide techniques of forming an interconnect structure using lithographic and deposition processes. The interconnect structure can be used to couple components of a semiconductor package. For one example, a semiconductor package includes a die stack and an interconnect structure formed on the die stack. The die stack comprises a plurality of dies. Each die in the die stack comprises: a first surface; a second surface opposite the first surface; sidewall surfaces coupling the first surface to the second surface; and a pad on the first surface. A one sidewall surface of one of the dies has a sloped profile. The semiconductor package also includes an interconnect structure positioned on the first surfaces and the sidewall with the sloped profile. In this semiconductor package, the interconnect structure electrically couples the pad on each of the dies to each other.

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