INTERCONNECT STRUCTURE FABRICATED USING LITHOGRAPHIC AND DEPOSITION PROCESSES

    公开(公告)号:US20210057326A1

    公开(公告)日:2021-02-25

    申请号:US17053144

    申请日:2018-12-12

    Abstract: Embodiments described herein provide techniques of forming an interconnect structure using lithographic and deposition processes. The interconnect structure can be used to couple components of a semiconductor package. For one example, a semiconductor package includes a die stack and an interconnect structure formed on the die stack. The die stack comprises a plurality of dies. Each die in the die stack comprises: a first surface; a second surface opposite the first surface; sidewall surfaces coupling the first surface to the second surface; and a pad on the first surface. A one sidewall surface of one of the dies has a sloped profile. The semiconductor package also includes an interconnect structure positioned on the first surfaces and the sidewall with the sloped profile. In this semiconductor package, the interconnect structure electrically couples the pad on each of the dies to each other.

    JOINT CONNECTION OF CORNER NON-CRITICAL TO FUNCTION (NCTF) BALL FOR BGA SOLDER JOINT RELIABILITY (SJR) ENHANCEMENT

    公开(公告)号:US20220122907A1

    公开(公告)日:2022-04-21

    申请号:US17425227

    申请日:2019-02-22

    Abstract: Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a package substrate with a top surface, a corner portion, and a plurality of solder balls on the top surface of the package substrate. The semiconductor package also includes a pattern on the corner portion of the package substrate. The pattern may have a width substantially equal to a width of the solder balls. The pattern may also include a continuous line having solder materials. The semiconductor package may include a plurality of conductive pads on the package substrate. The conductive pads may be coupled to the pattern. The pattern may have a z-height that is substantially equal to a z-height of the solder balls, and have one or more outer edges, where the outer edges of the pattern are sidewalls. The sidewalls of the pattern may be substantially vertical or tapered sidewalls.

    FILM IN SUBSTRATE FOR RELEASING Z STACK-UP CONSTRAINT

    公开(公告)号:US20220093568A1

    公开(公告)日:2022-03-24

    申请号:US17424839

    申请日:2019-02-22

    Abstract: Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a package substrate with a plurality of cavities, and a plurality of adhesives in the cavities of the package substrate. The semiconductor package also includes a plurality of stacked dies over the adhesives and the package substrate, where the stacked dies are coupled to the adhesives with spacers. The spacers may be positioned below outer edges of the stacked dies. The adhesives may include a plurality of films. The semiconductor package may further include a plurality of interconnects coupled to the stacked dies and package substrate, a plurality of electrical components on the package substrate, a mold layer over the stacked dies, interconnects, spacers, adhesives, and electrical components, and a plurality of adhesive layers coupled to the plurality of stacked dies, where one of the adhesive layers couples the stacked dies to the spacers.

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