公开(公告)号：US20190237391A1

公开(公告)日：2019-08-01

申请号：US16329170

申请日：2016-10-27

申请人： Intel Corporation

发明人： Seshu V. SATTIRAJU ,  Krishna Prakash GANESAN ,  Ashish BHATIA ,  Vinay SRIRAM ,  John MUIRHEAD ,  Hiten KOTHARI ,  Aloysius A. GUNAWAN ,  Lavanya ARYASOMAYAJULA ,  Shravan GOWRISHANKAR ,  Sriram PATTABHIRAMAN ,  Sudipto GUHA

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L25/18 ,  H01L23/00 ,  H01L23/522 ,  H01L23/528 ,  H01L21/822

CPC分类号： H01L23/481 ,  H01L21/48 ,  H01L21/76876 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/00 ,  H01L23/48 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L25/18 ,  H01L2224/0231 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05024 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05562 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05657 ,  H01L2224/06153 ,  H01L2224/06155 ,  H01L2224/06181 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/175 ,  H01L2224/335 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/014

摘要： A stacked-chip assembly including a plurality of IC chips or die that are stacked, and electrically coupled by solder bonds. In accordance with some embodiments described further below, the solder bonds are to contact a back-side land that includes a diffusion barrier to reduce intermetallic formation and/or other solder-induced reliability issues. The back-side land may include an electrolytic nickel (Ni) barrier layer separating solder from a back-side redistribution layer trace. This electrolytic Ni may be of high purity, which at least in part, may enable the backside metallization stack to be of minimal thickness while still functioning as a diffusion barrier. In some embodiments, the back-side land composition and architecture is distinct from a front-side land composition and/or architecture.