公开(公告)号：US20150147865A1

公开(公告)日：2015-05-28

申请号：US14612897

申请日：2015-02-03

Applicant: Intermolecular, Inc.

Inventor： Ronald John Kuse ,  Tony Chiang ,  Michael Miller ,  Prashant Phatak ,  Jinhong Tong

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode, the switching layer comprising a first metal oxide having a first bandgap greater than 4 electron volts (eV), the switching layer having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a second metal oxide having a second bandgap greater the first bandgap, the coupling layer having a second thickness that is less than 25 percent of the first thickness.

Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，在第一电极和第二电极之间的开关层，开关层包括第一金属氧化物，第一带隙较大 所述开关层具有第一厚度，以及所述开关层和所述第二电极之间的耦合层，所述耦合层包括第二金属氧化物，所述第二金属氧化物具有大于所述第一带隙的第二带隙，所述耦合层具有 第二厚度小于第一厚度的25％。

公开(公告)号：US08563959B2

公开(公告)日：2013-10-22

申请号：US13624374

申请日：2012-09-21

Applicant: Intermolecular, Inc.

Inventor： Tony Chiang ,  Chi-l Lang ,  Prashant Phatak

IPC: H01L47/00

CPC classification number: H01L45/1608 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/148 ,  H01L45/149 ,  H01L45/1616 ,  H01L45/1641

Abstract: A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.

公开(公告)号：US20170104031A1

公开(公告)日：2017-04-13

申请号：US15287091

申请日：2016-10-06

Applicant: Intermolecular, Inc.

Inventor： Mark Clark ,  Prashant Phatak ,  Charlene Chen ,  Ashish Bodke ,  Salil Mujumdar ,  Federico Nardi ,  Satbir Kahlon ,  Sergey V. Barabash ,  Feihu Wang

IPC: H01L27/24 ,  G11C11/16 ,  G11C13/00 ,  H01L45/00 ,  H01L27/22

CPC classification number: G11C11/1659 ,  G11C13/003 ,  G11C2213/53 ,  G11C2213/72 ,  G11C2213/76 ,  H01L27/224 ,  H01L27/2409 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/144

Abstract: Provided are selector elements with active components comprising insulating matrices and mobile ions disposed within these insulating matrices. Also provided are methods of operating such selector elements. The insulating matrices and mobile ions may be formed from different combinations of materials. For example, the insulating matrix may comprise amorphous silicon or silicon oxide, while mobile ions may be silver ions. In another example, the active component comprises copper and germanium, selenium, or tellerium, e.g., Se61Cu39, Se67Cu33, or Se56Cu44. The active component may be a multilayered structure with a variable composition throughout the structure. For example, the concentration of mobile ions may be higher in a center of the structure, away from the electrode interfaces. In some embodiments, outer layers may be formed from Ge33Se24Cu47, while the middle layer may be formed from Ge47Se29Cu24.

公开(公告)号：US08623671B2

公开(公告)日：2014-01-07

申请号：US13911929

申请日：2013-06-06

Applicant: Intermolecular Inc.

Inventor： Nobumichi Fuchigami ,  Pragati Kumar ,  Prashant Phatak

IPC: H01L21/00

CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1616

Abstract: ALD processing techniques for forming non-volatile resistive-switching memories are described. In one embodiment, a method includes forming a first electrode on a substrate, maintaining a pedestal temperature for an atomic layer deposition (ALD) process of less than 100° Celsius, forming at least one metal oxide layer over the first electrode, wherein the forming the at least one metal oxide layer is performed using the ALD process using a purge duration of less than 20 seconds, and forming a second electrode over the at least one metal oxide layer.

公开(公告)号：US20170117282A1

公开(公告)日：2017-04-27

申请号：US15334278

申请日：2016-10-25

Applicant: Intermolecular, Inc.

Inventor： Monica S. Mathur ,  Randall Higuchi ,  Thong Quang Ngo ,  Sandip Niyogi ,  Prashant Phatak

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10852 ,  H01L27/10814 ,  H01L27/11582 ,  H01L28/00 ,  H01L28/56 ,  H01L28/65

Abstract: Embodiments provided herein describe capacitor stacks and methods for forming capacitor stacks. A first electrode is formed above a substrate. A dielectric layer is formed above the first electrode. The dielectric layer includes zirconium. A second electrode is formed above the dielectric layer. At least one of the first electrode and the second electrode includes iridium.

公开(公告)号：US20170084643A1

公开(公告)日：2017-03-23

申请号：US15264822

申请日：2016-09-14

Applicant: Intermolecular, Inc.

Inventor： Gaurav Saraf ,  Howard Lin ,  Prashant Phatak ,  Sang Lee ,  Minh Huu Le ,  Hieu Pham ,  Congwen Yi

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/285 ,  H01L49/02

CPC classification number: H01L27/1255 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/2855 ,  H01L27/1259 ,  H01L28/60

Abstract: Embodiments provided herein describe storage capacitors for active matrix displays and methods for making such capacitors. A substrate is provided. A bottom electrode is formed above the substrate. A dielectric layer is formed above the bottom electrode. A top electrode is formed above the dielectric layer. A layer including an amorphous or crystalline material may be formed between the dielectric layer and the top electrode. The bottom electrode may have a thickness of at least 1000 Å, be formed in a gaseous environment of at least 95% argon, and/or not undergo an annealing process before the formation of a dielectric layer above the bottom electrode. The dielectric layer may include a nitrided high-k dielectric material.

公开(公告)号：US09029233B1

公开(公告)日：2015-05-12

申请号：US14612897

申请日：2015-02-03

Applicant: Intermolecular, Inc.

Inventor： Ronald John Kuse ,  Tony Chiang ,  Michael Miller ,  Prashant Phatak ,  Jinhong Tong

IPC: H01L21/16 ,  H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode, the switching layer comprising a first metal oxide having a first bandgap greater than 4 electron volts (eV), the switching layer having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a second metal oxide having a second bandgap greater the first bandgap, the coupling layer having a second thickness that is less than 25 percent of the first thickness.

Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，在第一电极和第二电极之间的开关层，开关层包括第一金属氧化物，第一带隙较大 所述开关层具有第一厚度，以及所述开关层和所述第二电极之间的耦合层，所述耦合层包括第二金属氧化物，所述第二金属氧化物具有大于所述第一带隙的第二带隙，所述耦合层具有 第二厚度小于第一厚度的25％。