公开(公告)号：US07183578B2

公开(公告)日：2007-02-27

申请号：US11365459

申请日：2006-02-28

申请人： Isamu Akasaki ,  Hiroshi Amano ,  Satoshi Kamiyama ,  Takanori Yasuda ,  Toshiya Matsuda

发明人： Isamu Akasaki ,  Hiroshi Amano ,  Satoshi Kamiyama ,  Takanori Yasuda ,  Toshiya Matsuda

IPC分类号： H01L27/15

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/2205 ,  H01L33/007

摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1−yN (0

摘要翻译： 半导体装置包括由化学式XB 2 X表示的二硼化物单晶制成的基板，其中X包括Ti，Zr，Nb和Hf中的至少一种，形成在半导体缓冲层上的半导体缓冲层 该衬底的主表面由Al y Ga 1-y N（0

公开(公告)号：US20060145166A1

公开(公告)日：2006-07-06

申请号：US11365459

申请日：2006-02-28

申请人： Isamu Akasaki ,  Hiroshi Amano ,  Satoshi Kamiyama ,  Takanori Yasuda ,  Toshiya Matsuda

发明人： Isamu Akasaki ,  Hiroshi Amano ,  Satoshi Kamiyama ,  Takanori Yasuda ,  Toshiya Matsuda

IPC分类号： H01L33/00

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/2205 ,  H01L33/007

摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1-yN (0

摘要翻译： 半导体装置包括由化学式XB 2 X表示的二硼化物单晶制成的基板，其中X包括Ti，Zr，Nb和Hf中的至少一种，形成在半导体缓冲层上的半导体缓冲层 该衬底的主表面由Al y Ga 1-y N（0

公开(公告)号：US20050006635A1

公开(公告)日：2005-01-13

申请号：US10810309

申请日：2004-03-26

申请人： Isamu Akasaki ,  Hiroshi Amano ,  Satoshi Kamiyama ,  Takanori Yasuda ,  Toshiya Matsuda

发明人： Isamu Akasaki ,  Hiroshi Amano ,  Satoshi Kamiyama ,  Takanori Yasuda ,  Toshiya Matsuda

IPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/22 ,  H01L33/00 ,  H01L29/06

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/2205 ,  H01L33/007

摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Tl, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1-yN (0

摘要翻译： 半导体装置包括由化学式XB2表示的二硼化物单晶构成的基板，其中X包括Tl，Zr，Nb和Hf中的至少一个，半导体缓冲层形成在基板的主表面上并由 AlyGa1-yN（0

公开(公告)号：US20080277670A1

公开(公告)日：2008-11-13

申请号：US12152016

申请日：2008-05-12

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

IPC分类号： H01L33/00

CPC分类号： B23K35/262 ,  C22C13/00 ,  H01B1/026

摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

摘要翻译： 本发明公开了一种SiC晶体，其包括：浓度大于5×10 17 cm -3的受主杂质; 供体杂质浓度小于1×10 9 -3 -3，且大于受体杂质的浓度。 本发明公开了一种半导体器件，包括：具有浓度大于5×10 17 cm -3的受主杂质的SiC荧光层和位于 浓度小于1×10 9 cm -3以上且大于受主杂质的浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

公开(公告)号：US07297989B2

公开(公告)日：2007-11-20

申请号：US10525753

申请日：2003-08-21

申请人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

发明人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

IPC分类号： H01L33/00

CPC分类号： H01L31/0264 ,  C30B29/10 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/24 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/32341

摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.

摘要翻译： 公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。 允许衬底1容易地沿着（10-10）平面4进行切割和分割。 使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。 具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。 还实现了消除切割余量的制造方法。

公开(公告)号：US20070145557A1

公开(公告)日：2007-06-28

申请号：US11710744

申请日：2007-02-26

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

IPC分类号： H01L23/02

CPC分类号： H01L33/22 ,  H01L33/38 ,  H01L2933/0016

摘要： The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.

摘要翻译： 本发明公开了一种制造半导体器件的方法，包括：提供半透明部分; 通过气相沉积在半透明部分上形成由一种或多种金属构成的覆盖层; 向覆盖层提供动能以形成周期性掩模; 通过使用周期性掩模在半透明部分上形成周期性结构。

公开(公告)号：US20060043396A1

公开(公告)日：2006-03-02

申请号：US11215406

申请日：2005-08-29

申请人： Michinobu Tsuda ,  Masataka Imura ,  Akira Honshio ,  Motoaki Iwaya ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Michinobu Tsuda ,  Masataka Imura ,  Akira Honshio ,  Motoaki Iwaya ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01L29/22

CPC分类号： H01L33/32 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/16

摘要： An epitaxial substrate for manufacturing field effect transistor (FET) that has heterojunction structure consisting of at least a channel layer made of gallium nitride or gallium indium nitride and a barrier layer made of aluminum gallium nitride formed successively on the principal plane of the sapphire substrate, wherein the principal plane of the sapphire substrate semiconductor is inclined from (01-12) plane toward (0001) plane by an off-angle α that is in a range of 0°

摘要翻译： 一种用于制造场效应晶体管（FET）的外延衬底，其具有至少由氮化镓或氮化铟镓制成的沟道层和由氮化铝镓制成的势垒层在蓝宝石衬底的主面上连续形成的异质结结构， 其中所述蓝宝石衬底半导体的主平面从（01-12）面朝向（0001）面倾斜角度α为0°

公开(公告)号：US07855385B2

公开(公告)日：2010-12-21

申请号：US12152016

申请日：2008-05-12

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

IPC分类号： H01L31/0312

CPC分类号： B23K35/262 ,  C22C13/00 ,  H01B1/026

摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

摘要翻译： 本发明公开了一种SiC晶体，其包含：浓度大于5×1017cm-3的受主杂质; 供体杂质浓度小于1×1019 cm-3，大于受主杂质的浓度。 本发明公开了一种半导体器件，包括：具有浓度大于5×1017cm-3的受主杂质的SiC荧光层和浓度小于1×1019 cm -3并且大于 受体杂质浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

公开(公告)号：US07732826B2

公开(公告)日：2010-06-08

申请号：US11603977

申请日：2006-11-21

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Hiroyuki Kinoshita

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Hiroyuki Kinoshita

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/04 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32

摘要： The present invention discloses a semiconductor, includes one or more luminescent layers; and one or more electron gas layers with two-dimensional electron gases that are distributed parallel to the luminescent layers.

摘要翻译： 本发明公开了一种半导体，包括一个或多个发光层; 以及具有与发光层平行分布的二维电子气体的一个或多个电子气体层。

公开(公告)号：US20060102924A1

公开(公告)日：2006-05-18

申请号：US10525753

申请日：2003-08-21

申请人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

发明人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

IPC分类号： H01L33/00

CPC分类号： H01L31/0264 ,  C30B29/10 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/24 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/32341

摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.

摘要翻译： 公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。 允许衬底1容易地沿着（10-10）平面4进行切割和分割。 使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。 具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。 还实现了消除切割余量的制造方法。