公开(公告)号：US07208756B2

公开(公告)日：2007-04-24

申请号：US10914676

申请日：2004-08-10

申请人： Ishiang Shih ,  Yi Chen ,  Chunong Qiu ,  Cindy X. Qiu ,  Steven Shuyong Xiao

发明人： Ishiang Shih ,  Yi Chen ,  Chunong Qiu ,  Cindy X. Qiu ,  Steven Shuyong Xiao

IPC分类号： H01L29/08

CPC分类号： H01L51/105 ,  H01L51/0021 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549

摘要： Organic semiconductor-based devices such as thin film transistors, organic light emitting devices and solar cells have potential in low cost electronic and optoelectronic applications. The performance of these organic semiconductor-based devices is often limited by the large resistance between the organic semiconductors and counter electrodes. This invention provides device structures and methods to reduce the unwanted resistance.

摘要翻译： 有机半导体器件如薄膜晶体管，有机发光器件和太阳能电池具有低成本电子和光电子应用的潜力。 这些基于有机半导体的器件的性能通常受到有机半导体和对电极之间的大电阻的限制。 本发明提供了减少不需要的电阻的器件结构和方法。

公开(公告)号：US07030633B1

公开(公告)日：2006-04-18

申请号：US11002936

申请日：2004-12-03

申请人： Chunong Qiu ,  Cindy X. Qiu ,  Steven Shuyong Xiao

发明人： Chunong Qiu ,  Cindy X. Qiu ,  Steven Shuyong Xiao

IPC分类号： G01R31/26

CPC分类号： G01N27/045 ,  G01R31/2648 ,  G01R31/2884 ,  H01L22/14

摘要： This invention provides an innovative multi-line structure and an effective four-terminal method for the resistivity measurement of semiconductor materials. The multi-line structure and the four-terminal method not only allow one to perform resistivity measurement on any inorganic and organic semiconductor thin film conveniently, rapidly and accurately but also offer the means to study resistivity uniformity across the semiconductor thin film.

摘要翻译： 本发明为半导体材料的电阻率测量提供了创新的多线结构和有效的四端子方法。 多线结构和四端子方法不仅可以方便，快速，准确地对任何无机和有机半导体薄膜进行电阻率测量，而且还提供研究半导体薄膜电阻率均匀性的方法。

公开(公告)号：US20080135804A1

公开(公告)日：2008-06-12

申请号：US11635445

申请日：2006-12-08

申请人： Chunong Qiu ,  Steven Shuyong Xiao ,  Cindy X. Qiu

发明人： Chunong Qiu ,  Steven Shuyong Xiao ,  Cindy X. Qiu

IPC分类号： C09K11/06

CPC分类号： H05B33/14 ,  C09K11/06 ,  C09K2211/1029 ,  C09K2211/185 ,  H01L51/0042 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/5012

摘要： The present invention discloses all-in-one organic electroluminescent inks for balanced charge injection. When of single layer organic lighting emitting diodes are made from these inks, the charge balance can be readily achieved. By using the invented all-in-one organic electroluminescent inks, both the device structure and the fabrication process are simplified, which will increase the production yield and reduce the production cost in manufacturing such devices. This invention also teaches methods to fabricate single layer all-in-one organic light emitting diodes.

摘要翻译： 本发明公开了一种用于平衡电荷注入的一体式有机电致发光油墨。 当由这些油墨制成单层有机发光二极管时，可以容易地实现电荷平衡。 通过使用本发明的一体式有机电致发光油墨，能够简化装置结构和制造工艺，从而提高制造成品率，降低制造装置的制造成本。 本发明还教导制造单层一体有机发光二极管的方法。

公开(公告)号：US09799686B2

公开(公告)日：2017-10-24

申请号：US13987832

申请日：2013-09-09

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

IPC分类号： H01L27/13 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L21/02 ,  H01L21/4757 ,  H01L21/4763 ,  H01L49/02 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L27/1259 ,  H01L21/02565 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/20 ,  H01L28/40 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969

摘要： MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

公开(公告)号：US20160225915A1

公开(公告)日：2016-08-04

申请号：US14544652

申请日：2015-01-30

申请人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

发明人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

IPC分类号： H01L29/786 ,  H01L29/49 ,  H01L29/423 ,  H01L29/24

CPC分类号： H01L29/78696 ,  H01L29/1054 ,  H01L29/24 ,  H01L29/423 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/4908 ,  H01L29/78609 ,  H01L29/7869

摘要： Transistors with a first metal oxynitride channel layer and a second metal oxynitride barrier layer are provided. The first metal oxynitride channel layer is lightly doped or without intentional doping to achieve high carrier mobility. Impurity atoms are introduced into the second metal oxynitride barrier layer and the donated carriers migrate or drift into the first metal oxynitride channel layer to effect high mobility conduction between source and drain.

摘要翻译： 提供具有第一金属氧氮化物沟道层和第二金属氮氧化物阻挡层的晶体管。 第一金属氧氮化物沟道层被轻掺杂或没有有意掺杂以实现高载流子迁移率。 杂质原子被引入到第二金属氧氮化物阻挡层中，并且所捐赠的载流子迁移或漂移到第一金属氧氮化物沟道层中以实现源极和漏极之间的高迁移率传导。

公开(公告)号：US09324884B1

公开(公告)日：2016-04-26

申请号：US14544752

申请日：2015-02-12

申请人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

发明人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

IPC分类号： H01L29/51 ,  H01L29/861 ,  H01L29/24 ,  H01L29/45 ,  H01L29/06 ,  H01L23/31 ,  H01L23/29

CPC分类号： H01L29/861 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

摘要： Metal oxynitride diodes having at least a first metal oxynitride layer of a first conduction type and a second metal oxynitride layer of a second conduction type are provided. The first oxynitride layer is selectively doped or un-intentionally doped and have high carrier mobility. The second oxynitride layer is also selectively doped or un-intentionally doped and have high carrier mobility. A compensated oxynitride drift layer having a low carrier density may be adopted to increase the breakdown voltage of the device.

摘要翻译： 提供具有至少第一导电类型的第一金属氧氮化物层和第二导电类型的第二金属氧氮化物层的金属氧氮化物二极管。 第一氧氮化物层是选择性掺杂的或非有意掺杂的并且具有高载流子迁移率。 第二氧氮化物层也是选择性掺杂或非有意掺杂的并且具有高载流子迁移率。 可以采用具有低载流子密度的补偿氮氧化物漂移层来增加器件的击穿电压。

公开(公告)号：US20150263116A1

公开(公告)日：2015-09-17

申请号：US13999623

申请日：2014-03-14

申请人： Chunong Qiu ,  Jay-Hsing Wu ,  Cindy X. Qiu ,  Yi-Chi Shih ,  Ishiang Shih

发明人： Chunong Qiu ,  Jay-Hsing Wu ,  Cindy X. Qiu ,  Yi-Chi Shih ,  Ishiang Shih

IPC分类号： H01L29/423 ,  H01L29/778

CPC分类号： H01L29/7783 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/475

摘要： The present invention is related to high electron mobility transistors for power switching and microwave amplification and switching. More specifically, it related to a high electron mobility transistor with an improved gate to enhance the performance. When fabricating a high electron mobility thin film transistors, a first gate metal layer made of chromium alloy or tungsten alloy is deposited to reduce surface traps and to enhance the stability and integrity of the gates.

摘要翻译： 本发明涉及用于功率开关和微波放大和切换的高电子迁移率晶体管。 更具体地，它涉及具有改进的栅极以提高性能的高电子迁移率晶体管。 当制造高电子迁移率薄膜晶体管时，沉积由铬合金或钨合金制成的第一栅极金属层以减少表面陷阱并提高栅极的稳定性和完整性。

公开(公告)号：US20150069514A1

公开(公告)日：2015-03-12

申请号：US13987832

申请日：2013-09-09

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

IPC分类号： H01L27/13 ,  H01L21/84

CPC分类号： H01L27/1259 ,  H01L21/02565 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/20 ,  H01L28/40 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969

摘要： MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

摘要翻译： 提供具有薄膜晶体管的MMIC电路，而不需要在制作有源和无源部件之后对衬底进行研磨和蚀刻。 此外，还提供了基于无毒化合物半导体的有源器件技术。 无衬底研磨/蚀刻的MMIC方法和结构的成功以及无活性组分的无毒元素的半导体的使用将减少制造时间，降低经济成本和环境负担。 提供了MMIC结构，其中对芯片或芯片附接，对准和引线键合的要求被完全消除或最小化。 这将增加MMIC电路和模块的再现性并缩短制造时间。

公开(公告)号：US20080041436A1

公开(公告)日：2008-02-21

申请号：US11504308

申请日：2006-08-16

申请人： Po K. Lau ,  Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu

发明人： Po K. Lau ,  Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu

IPC分类号： H02N6/00 ,  H01L31/00

CPC分类号： H01L31/0749 ,  H01L31/022425 ,  H01L31/02245 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/18 ,  Y02E10/541

摘要： This invention provides a bifacial photovoltaic device to enhance the conversion of solar energy into electricity with a layer by layer additive structure. The bifacial photovoltaic device comprises an electrically conductive core electrode, a plurality of semiconductor layers covering one end region of the core electrode and at least a portion of the two faces of the core electrode, a first counter electrode, a second counter electrode, and a third counter electrode connecting the first and the second counter electrodes. The device may also comprise a light reflective layer and an anti-reflective layer. This invention also provides an array of bifacial photovoltaic cells with simple interconnection schemes.

摘要翻译： 本发明提供了一种双面添加剂结构来增强太阳能转化为电能的双面光伏器件。 双面光电器件包括导电芯电极，覆盖芯电极的一端区域和芯电极的两个面的至少一部分的多个半导体层，第一对电极，第二对电极和 连接第一和第二对置电极的第三对置电极。 该装置还可以包括光反射层和抗反射层。 本发明还提供了具有简单互连方案的双面光伏电池阵列。

公开(公告)号：US20200036364A1

公开(公告)日：2020-01-30

申请号：US15998270

申请日：2018-07-27

申请人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu ,  Andy Shih ,  Yi-Chi Shih

发明人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu ,  Andy Shih ,  Yi-Chi Shih

IPC分类号： H03H9/64 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03M1/66 ,  H01L41/107

摘要： Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. The present invention provides tunable surface acoustic wave (SAW) IDT structures with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters (DACs). The DAC converts an input digital signal to an output DC voltage and provide DC bias voltages to the SAW IDTs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the SAW IDTs.