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公开(公告)号：US07018504B1
公开(公告)日：2006-03-28
申请号：US09658784
申请日：2000-09-11
申请人： Ivo Raaijmakers , Ravinder Aggarwal , James Kusbel
发明人： Ivo Raaijmakers , Ravinder Aggarwal , James Kusbel
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/67751 , H01L21/67167 , H01L21/67201 , H01L21/67757
摘要： A wafer carrier adapted to hold a plurality of wafers and is positioned on an elevator plate in a load lock. The elevator plate is adapted to move between a first position with the carrier in a first chamber of the load lock and a second position with the carrier in the auxiliary chamber. In the second position, the elevator plate substantially seals the auxiliary chamber from the first chamber. In use, a first wafer is placed onto the wafer carrier. The wafer carrier can moved into the auxiliary chamber before or after the first wafer is placed onto the wafer carrier. The first wafer is auxiliary processed in the auxiliary chamber. A second wafer is placed onto the wafer carrier. Preferably after the second wafer is placed onto the wafer carrier, the first wafer is removed from the load lock. A third wafer is preferably then placed onto the wafer carrier so that the second wafer can cool. The second wafer is then removed from the load lock. The cycle is repeated.
摘要翻译： 适于保持多个晶片并且位于加载锁中的电梯板上的晶片载体。 所述升降板适于在所述负载锁的第一室中的所述载体的第一位置和所述辅助室中的所述载体的第二位置之间移动。 在第二位置，升降板基本上将辅助室与第一室密封。 在使用中，将第一晶片放置在晶片载体上。 在将第一晶片放置在晶片载体上之前或之后，晶片载体可以移动到辅助室中。 第一个晶片在辅助室中辅助处理。 将第二晶片放置在晶片载体上。 优选地，在将第二晶片放置在晶片载体上之后，将第一晶片从负载锁上移除。 然后优选将第三晶片放置在晶片载体上，使得第二晶片可以冷却。 然后将第二个晶片从负载锁中取出。 重复循环。
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公开(公告)号：US06242718B1
公开(公告)日：2001-06-05
申请号：US09434030
申请日：1999-11-04
IPC分类号： A21B100
CPC分类号： H01L21/6835 , H01L21/6838 , H01L2221/68359 , Y10S414/135
摘要： A Bernoulli wand type semiconductor wafer pickup device that is adapted to regulate the temperature of a wafer while the wafer is being repositioned within a semiconductor processing system. In one embodiment, the device is comprised of a resistive heating element that is adapted to raise the temperature of the pickup device. In particular, by raising the temperature of the pickup device, a portion of the thermal radiation emitted from the device is absorbed by the wafer, thus providing a means for regulating the wafer temperature. In another embodiment, the device is adapted with the characteristics of a black body absorber so as to enable the device to optimally absorb thermal radiation from external radiant sources, thereby providing a means for increasing the temperature of the device. In another embodiment, the device is coated with reflective material that enables a large portion of thermal radiation emitted from the wafer to be reflected and absorbed back into the wafer. In another embodiment, the preexisting gas system of the pickup device is adapted with a gas beating device that is adapted to raise the temperature of the gas so as to regulate the temperature of the wafer.
摘要翻译： 一种伯努利棒状半导体晶片拾取装置，其适于在晶片在半导体处理系统内重新定位时调节晶片的温度。 在一个实施例中，该装置包括适于提升拾取装置的温度的电阻加热元件。 特别地，通过提高拾取装置的温度，从装置发射的热辐射的一部分被晶片吸收，从而提供调节晶片温度的装置。 在另一个实施例中，该装置适于具有黑体吸收体的特征，以便能够使装置最佳地吸收来自外部辐射源的热辐射，由此提供用于增加装置温度的装置。 在另一个实施例中，该装置涂覆有反射材料，其使得能够将从晶片发射的大部分热辐射反射并吸收回到晶片中。 在另一个实施例中，拾取装置的预先存在的气体系统适用于气体打浆装置，该气体打浆装置适于升高气体的温度以调节晶片的温度。
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公开(公告)号：US06704496B2
公开(公告)日：2004-03-09
申请号：US10291897
申请日：2002-11-08
IPC分类号： F26B330
CPC分类号： H01L21/28556
摘要： A substrate to be processed in a high temperature processing chamber is preheated to avoid the problems associated with thermal shock when the substrate is dropped onto a heated susceptor. Preheating is effected by holding the substrate over a susceptor maintained at or near the processing temperature until the temperature of the substrate approaches the processing temperature. Thus, wafer warping and breakage are greatly reduced, and wafer throughput is improved because of time saved in maintaining the susceptor at constant temperature without cool down and reheat periods.
摘要翻译： 在高温处理室中待加工的基板被预热以避免当基板落在加热的基座上时与热冲击相关的问题。 通过将基板保持在保持在处理温度处于或接近加工温度的基座上直到基板的温度接近处理温度来实现预热。 因此，晶片翘曲和断裂大大降低，并且由于在将感受器维持在恒定温度而不降温和再加热时间的情况下节省时间，晶片产量得到改善。
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公开(公告)号：US06521503B2
公开(公告)日：2003-02-18
申请号：US09840532
申请日：2001-04-23
IPC分类号： H01L21336
CPC分类号： H01L21/28556
摘要： A substrate to be processed in a high temperature processing chamber is preheated to avoid the problems associated with thermal shock when the substrate is dropped onto a heated susceptor. Preheating is effected by holding the substrate over a susceptor maintained at or near the processing temperature until the temperature of the substrate approaches the processing temperature. Thus, wafer warping and breakage are greatly reduced, and wafer throughput is improved because of time saved in maintaining the susceptor at constant temperature without cool down and reheat periods.
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公开(公告)号：US07231141B2
公开(公告)日：2007-06-12
申请号：US10654068
申请日：2003-09-03
CPC分类号： A47C31/001 , B32B7/02 , D10B2331/021 , H01L21/28556
摘要： A substrate to be processed in a high temperature processing chamber is preheated to avoid the problems associated with thermal shock when the substrate is dropped onto a heated susceptor. Preheating is effected by holding the substrate over a susceptor maintained at or near the processing temperature until the temperature of the substrate approaches the processing temperature. Thus, wafer warping and breakage are greatly reduced, and wafer throughput is improved because of time saved in maintaining the susceptor at constant temperature without cool down and reheat periods.
摘要翻译： 在高温处理室中待加工的基板被预热以避免当基板落在加热的基座上时与热冲击相关的问题。 通过将基板保持在保持在处理温度处于或接近加工温度的基座上直到基板的温度接近处理温度来实现预热。 因此，晶片翘曲和断裂大大降低，并且由于在将感受器维持在恒定温度而不降温和再加热时间的情况下节省时间，晶片产量得到改善。
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6.发明申请公开(公告)号：US20050169730A1
公开(公告)日：2005-08-04
申请号：US10834577
申请日：2004-04-29
申请人： Ravinder Aggarwal , James Kusbel
发明人： Ravinder Aggarwal , James Kusbel
IPC分类号： H01L21/00 , H01L21/677 , B65G1/00
CPC分类号： H01L21/67126 , H01L21/67772 , H01L21/67775
摘要： A sealing member provides a seal between a front opening unified pod (FOUP) and a semiconductor processing tool. The seal inhibits fluid flow between an ambient environment and a minienvironment in a front end of the processing tool while the FOUP and minienvironment are open to one another for transporting wafers between the processing tool and the FOUP.
摘要翻译： 密封构件在前开口统一吊舱（FOUP）和半导体加工工具之间提供密封。 密封件防止处理工具前端的周围环境和环境之间的流体流动，同时FOUP和环境相互打开以在处理工具和FOUP之间传输晶片。
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公开(公告)号：US20060045663A1
公开(公告)日：2006-03-02
申请号：US10912299
申请日：2004-08-05
申请人： Ravinder Aggarwal , James Kusbel
发明人： Ravinder Aggarwal , James Kusbel
IPC分类号： H01L21/677
CPC分类号： H01L21/67772 , H01L21/67775
摘要： A load port comprises a platform for receiving a FOUP. The platform includes features for manually removing a FOUP door. The platform also includes features for placing the FOUP in operative relation to a wafer transfer robot configured to transfer wafers between first and second containers.
摘要翻译： 负载端口包括用于接收FOUP的平台。 该平台包括手动取出FOUP门的功能。 平台还包括用于将FOUP放置在操作关系中的功能，该晶片传送机器人被配置为在第一和第二容器之间传送晶片。
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公开(公告)号：US08262287B2
公开(公告)日：2012-09-11
申请号：US12330096
申请日：2008-12-08
申请人： Buz Darabnia , Andy Yednak , Mike Halpin , Loren Jacobs , Ravinder Aggarwal
发明人： Buz Darabnia , Andy Yednak , Mike Halpin , Loren Jacobs , Ravinder Aggarwal
摘要： A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.
摘要翻译： 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件，第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。
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公开(公告)号：US20120031340A1
公开(公告)日：2012-02-09
申请号：US13276515
申请日：2011-10-19
IPC分类号： C23C16/455 , C23C16/458 , C23C16/52 , B01J19/00
CPC分类号： C23C16/4412 , C23C16/455 , C23C16/45502 , C23C16/45504 , C23C16/45563 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4584
摘要： A reaction apparatus for a semiconductor fabrication apparatus, wherein the reaction apparatus includes at least two adjustable outlet ports for withdrawing reactant gases from the reaction chamber. Adjustment of the flow rate through each of the outlet ports selectively modifies the flow pattern of the reactant gases within the reaction chamber to maintain a desired flow pattern therewithin, such as a substantially uniform flow over the surface of a substrate being processed, and/or minimization of turbulence within the reactor.
摘要翻译： 一种用于半导体制造装置的反应装置，其中反应装置包括至少两个可调节的出口，用于从反应室中抽出反应气体。 通过每个出口端口的流量的调节选择性地修改反应室内的反应气体的流动模式，以在其中维持所需的流动模式，例如在正被处理的基底的表面上的基本均匀的流动，和/或 反应器内湍流的最小化。
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10.发明授权公开(公告)号：US08088225B2
公开(公告)日：2012-01-03
申请号：US12641712
申请日：2009-12-18
申请人： Matt G. Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory M. Bartlett , Joseph P. Italiano , Bob Haro
发明人： Matt G. Goodman , Jereon Stoutyesdijk , Ravinder Aggarwal , Mike Halpin , Tony Keeton , Mark Hawkins , Lee Haen , Armand Ferro , Paul Brabant , Robert Vyne , Gregory M. Bartlett , Joseph P. Italiano , Bob Haro
IPC分类号： C23C16/458 , C23C16/00 , H01L21/306
CPC分类号： H01L21/68735 , H01J37/32871 , H01L21/67028
摘要： A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).
摘要翻译： 衬底支撑系统包括具有在其顶表面和底表面之间延伸的多个通道的衬底保持器。 衬底保持器支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。 中空的支撑构件为衬底的下侧提供支撑，并且构造成将气体向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据实施例，气体然后围绕衬底边缘向外和向上流动（以阻止反应物气体在衬底上方的背面沉积）或向下穿过衬底保持器的通道（如果有的话），其不会引回到中空支撑件 （通过从扩散的掺杂剂原子远离衬底背面来抑制自掺杂）。
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