LIGHT EMITTING DEVICE
    1.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20110147776A1

    公开(公告)日:2011-06-23

    申请号:US12874839

    申请日:2010-09-02

    IPC分类号: H01L33/58

    摘要: According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light.

    摘要翻译: 根据一个实施例,发光器件包括半导体发光元件,安装构件,第一波长转换层和第一透明层。 半导体发光元件发射第一光。 半导体发光元件被放置在安装构件上。 第一波长转换层设置在与安装构件接触的半导体发光元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 第一透明层设置在与半导体发光元件和第一波长转换层接触的半导体发光元件和第一波长转换层之间。 第一透明层对于第一光和第二光是透明的。

    LIGHT-EMITTING DEVICE
    2.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20110101851A1

    公开(公告)日:2011-05-05

    申请号:US12985955

    申请日:2011-01-06

    IPC分类号: H01J1/62

    摘要: A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

    摘要翻译: 提供了一种发光器件,其包括具有第一部分和围绕其的第二部分的封装,安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件, 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体,层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓,并且包括以上述顺序层压的红色荧光层,黄色荧光层,绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。

    LIGHT-EMITTING DEVICE
    3.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20090058256A1

    公开(公告)日:2009-03-05

    申请号:US12143382

    申请日:2008-06-20

    IPC分类号: H01J1/62

    摘要: A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

    摘要翻译: 提供了一种发光器件,其包括具有第一部分和围绕其的第二部分的封装,安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件, 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体,层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓,并且包括以上述顺序层压的红色荧光层,黄色荧光层,绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。

    LIGHT EMITTING DEVICE
    7.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20120056527A1

    公开(公告)日:2012-03-08

    申请号:US13034137

    申请日:2011-02-24

    IPC分类号: H01J1/62

    摘要: A light emitting device according to one embodiment includes a board; a light emitting element mounted on the board, emitting light having a wavelength of 250 nm to 500 nm; a red fluorescent layer formed on the element, including a red phosphor expressed by equation (1), having a semicircular shape with a diameter r; (M1−x1Eux1)aSibAlOcNd  (1) (In the equation (1), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al (Aliminum), rare-earth elements, and IVB group elements),an intermediate layer formed on the red fluorescent layer, being made of transparent resin, having a semicircular shape with a diameter D; and a green fluorescent layer formed on the intermediate layer, including a green phosphor, having a semicircular shape. A relationship between the diameter r and the diameter D satisfies equation (2): 2.0r (μm)≧D(r+1000) (μm).  (2)

    摘要翻译: 根据一个实施例的发光器件包括板; 安装在所述板上的发光元件,发射波长为250nm至500nm的光; 形成在元件上的红色荧光层,包括由等式(1)表示的具有直径为r的半圆形形状的红色荧光体; (M1-x1Eux1)aSibAlOcNd(1)(在式(1)中,M是选自IA族元素,IIA族元素,IIIA族元素,Al(Aliminum)以外的IIIB族元素,稀土元素 和IVB族元素),形成在红色荧光层上的由透明树脂制成的具有直径D的半圆形状的中间层; 以及形成在具有半圆形状的绿色荧光体的中间层上形成的绿色荧光体层。 直径r和直径D之间的关系满足式(2):2.0r(μm)≥D(r + 1000)(μm)。 (2)

    LIGHT EMITTING DEVICE
    9.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20120056216A1

    公开(公告)日:2012-03-08

    申请号:US13214608

    申请日:2011-08-22

    IPC分类号: H01L27/15

    摘要: A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units.

    摘要翻译: 根据一个实施例的发光器件包括:板; 多个第一发光单元,每个包括形成在具有绿色荧光体的第一发光元件上的第一发光元件和第一荧光层; 多个第二发光单元,每个包括形成在具有红色荧光体的第二发光元件上的第二发光元件和第二荧光层; 第二荧光层和第一荧光层以介于其间的气体以非接触方式分离; 以及多个第三发光单元,每个包括第三发光元件和形成在第三发光元件上的树脂层,其中没有绿色荧光体和红色荧光体,第三发光单元设置在第一发光单元和第二发光单元之间 发光单元。

    METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER
    10.
    发明申请
    METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 有权
    制备氮化物半导体层的方法

    公开(公告)号:US20130237036A1

    公开(公告)日:2013-09-12

    申请号:US13604183

    申请日:2012-09-05

    IPC分类号: H01L21/02

    摘要: According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.

    摘要翻译: 根据一个实施例,公开了一种用于制造氮化物半导体层的方法。 该方法可以包括在基底的主表面上形成第一下层,并在第一下层上形成第一上层。 第一下层沿着平行于主表面的第一轴线具有第一格子间距。 第一上层具有沿着第一轴线的第二格子间距大于第一格子间距。 第一上层的至少一部分具有压缩应变。 第一和第二格子间隔之间的差与第一格子间隔的比率不小于0.005且不大于0.019。 第一上层在与主表面平行的方向上的生长速率大于垂直于主表面的方向的生长速率。