公开(公告)号：US08294165B2

公开(公告)日：2012-10-23

申请号：US11668218

申请日：2007-01-29

申请人： Yasushi Hattori ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Shinji Saito ,  Naomi Shida ,  Masahiro Yamamoto

发明人： Yasushi Hattori ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Shinji Saito ,  Naomi Shida ,  Masahiro Yamamoto

IPC分类号： H01L33/50 ,  H01L33/54 ,  H01L33/56

CPC分类号： H01L33/505 ,  H01L25/0753 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00011 ,  H01L2924/01021 ,  H01L2924/01066 ,  H01L2924/09701 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/00012

摘要： A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.

摘要翻译： 提供一种发光装置，其包括具有平面的基板，安装在基板的平面上的半导体发光元件，其发射从紫外线到可见光的范围内的光，第一透光层 形成在基板上并覆盖半导体发光元件，形成在第一透光层上方并含有荧光体粒子和基体的荧光体层，以及形成在荧光体层的上方并与基板的平面接触的第二透光层 。 荧光体层的表面具有反射荧光体颗粒的形状的突起。

公开(公告)号：US07068911B2

公开(公告)日：2006-06-27

申请号：US11025975

申请日：2005-01-03

申请人： Genichi Hatakoshi

发明人： Genichi Hatakoshi

IPC分类号： G02B6/10 ,  G02B6/00

CPC分类号： G11B7/1384 ,  G02B6/241 ,  G11B7/00 ,  G11B7/1387 ,  G11B7/22

摘要： Disclosed is an optical probe for obtaining a micro spot light, comprising a rod-like glass body having a rectangular cross section as a core for propagating an light wave. The distal end portion of the glass body is gradually diminished toward the distal end so as to form a micro distal end face having a small diameter. The side surface of the distal end portion of the glass body in a direction perpendicular to the polarized direction of the light wave is coated with a light absorber formed of a metal film.

公开(公告)号：USD512946S1

公开(公告)日：2005-12-20

申请号：US29213817

申请日：2004-09-24

申请人： Genichi Hatakoshi ,  Masato Kozutsumi

设计人： Genichi Hatakoshi ,  Masato Kozutsumi

公开(公告)号：US06400742B1

公开(公告)日：2002-06-04

申请号：US09498372

申请日：2000-02-04

申请人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

发明人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/2231 ,  H01S5/4043 ,  H01S5/405 ,  H01S5/4087 ,  H01S2301/166

摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

摘要翻译： 公开了一种半导体激光器，其通过横向模式控制在低工作电压下实现基本横向模式的连续振荡。 该半导体激光器是按照n型GaN接触层，n型GaAlN包覆层13，MQW有源层16，p型GaAlN覆盖层19的顺序依次形成蓝宝石衬底10上的以下层来制造的 其中激光器包括双重异质结构，其包括形成在包覆层19中的条纹形状的脊和形成在双重异质结构上的包层19的脊部之外的区域中的光限制层20，其中折射率 光限制层20的折射率大于p型GaAlN包覆层的折射率。

公开(公告)号：US6057565A

公开(公告)日：2000-05-02

申请号：US937166

申请日：1997-09-25

申请人： Hiroaki Yoshida ,  Masayuki Ishikawa ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Genichi Hatakoshi

发明人： Hiroaki Yoshida ,  Masayuki Ishikawa ,  Hidetoshi Fujimoto ,  Yoshihiro Kokubun ,  Genichi Hatakoshi

IPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/325

摘要： In the semiconductor light emitting device, a high resistance layer formed by mutual diffusion at an interface with the substrate crystal can be eliminated, and a low resistance p-type contact can be realized. In addition, it is possible to reduce the leak current when an internal current-blocking structure is formed. In practice, a compound semiconductor layer offset in composition ratio stoichiometrically is used as the contact layer. Further, when a predetermined element is added to the contact layer, a large amount of doping can be enabled in comparison with when impurities are added to the ordinary GaN based layer. Therefore, a high concentration conductive type layer can be realized while reducing the contact resistance. In addition, when the compound semiconductor layer offset away from the stoichiometric composition is used as the current-blocking layer, the current-blocking efficiency can be improved. Further, when the substrate is irradiated with light having energy slightly higher than that of the band gap of the grown crystal in the photo-excitation MOCVD method in order to eliminate the rough surface, it is possible to realize the p-type conductive of high carrier concentration.

摘要翻译： 在半导体发光器件中，可以消除在与衬底晶体的界面处相互扩散形成的高电阻层，并且可以实现低电阻p型接触。 此外，当形成内部阻流结构时，可以减小泄漏电流。 实际上，化学计量组成比偏移的化合物半导体层用作接触层。 此外，当向接触层添加预定元素时，与将杂质添加到普通的GaN基层相比，可以实现大量的掺杂。 因此，可以在降低接触电阻的同时实现高浓度导电型层。 另外，当偏离化学计量组成的化合物半导体层用作电流阻挡层时，可以提高电流阻挡效率。 此外，为了消除粗糙表面，为了消除粗糙表面，当在光激发MOCVD方法中照射具有比生长晶体的带隙稍高的光的基板时，可以实现高的p型导电 载体浓度。

公开(公告)号：US5966396A

公开(公告)日：1999-10-12

申请号：US900127

申请日：1997-07-25

申请人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

发明人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

IPC分类号： H01S5/042 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32325 ,  H01S5/0422 ,  H01S5/2275 ,  H01S5/32341

摘要： A semiconductor laser is formed from a gallium nitride-based compound semiconductor material, and has a double-heterostructure portion obtained by sandwiching an active layer between an n-type cladding layer and a p-type cladding layer on a sapphire substrate. The double-heterostructure portion is formed into a mesa shape on the sapphire substrate via a GaN buffer layer. The two sides of this mesa structure are buried with GaN current blocking layers.

摘要翻译： 半导体激光器由氮化镓系化合物半导体材料形成，并且具有通过在蓝宝石衬底上的n型覆层和p型覆层之间夹持有源层而获得的双异质结构部。 双异质结构部分经由GaN缓冲层在蓝宝石衬底上形成台面形状。 这种台面结构的两面被GaN电流阻挡层掩埋。

公开(公告)号：US5153889A

公开(公告)日：1992-10-06

申请号：US747128

申请日：1991-08-19

申请人： Hideto Sugawara ,  Masayuki Ishikawa ,  Yoshihiro Kokubun ,  Yukie Nishikawa ,  Shigeya Naritsuka ,  Kazuhiko Itaya ,  Genichi Hatakoshi ,  Mariko Suzuki

发明人： Hideto Sugawara ,  Masayuki Ishikawa ,  Yoshihiro Kokubun ,  Yukie Nishikawa ,  Shigeya Naritsuka ,  Kazuhiko Itaya ,  Genichi Hatakoshi ,  Mariko Suzuki

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/30 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01L33/145 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/10 ,  H01L33/14 ,  H01L33/30

摘要： Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5.times.10.sup.17 cm.sup.-3 to 5.times.10.sup.18 cm.sup.-3.

摘要翻译： 公开了一种半导体发光器件，包括半导体衬底，形成在衬底的前表面上并由InGaAlP有源层组成的双异质结构部分和其间夹有有源层的下和上和外包层，形成的第一电极 在双异质结构部分的表面的一部分中，以及形成在基板的背面上的第二电极。 由GaAlAs形成的电流扩散层介于双异质结构部分和第一电极之间，所述电流扩散层的厚度为5至30微米，载流子浓度为5×10 17 cm -3至5×10 18 cm -3。

公开(公告)号：US4987096A

公开(公告)日：1991-01-22

申请号：US450063

申请日：1989-12-13

申请人： Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Kazuhiko Itaya ,  Yukio Watanabe ,  Mariko Suzuki ,  Genichi Hatakoshi

发明人： Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Kazuhiko Itaya ,  Yukio Watanabe ,  Mariko Suzuki ,  Genichi Hatakoshi

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/162 ,  H01S5/168 ,  H01S5/2231 ,  H01S5/3206 ,  H01S5/32325 ,  Y10S148/025 ,  Y10S148/095

摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

公开(公告)号：US4893313A

公开(公告)日：1990-01-09

申请号：US323400

申请日：1989-03-14

申请人： Genichi Hatakoshi ,  Kazuhiko Itaya ,  Shigeya Naritsuka ,  Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Yukio Watanabe ,  Yasuo Ohba ,  Yoshihiro Kokubun ,  Yutaka Uematsu

发明人： Genichi Hatakoshi ,  Kazuhiko Itaya ,  Shigeya Naritsuka ,  Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Yukio Watanabe ,  Yasuo Ohba ,  Yoshihiro Kokubun ,  Yutaka Uematsu

IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/32325 ,  H01S5/2004 ,  H01S5/2231 ,  H01S5/3211

摘要： In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2

公开(公告)号：US07763907B2

公开(公告)日：2010-07-27

申请号：US11850404

申请日：2007-09-05

申请人： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

发明人： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

IPC分类号： H01L33/22 ,  H01L33/14 ,  H01L33/38

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.

摘要翻译： 半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为 在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。 该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。