摘要:
A conductive structure for a semiconductor integrated circuit and method for forming the conductive structure are provided. The semiconductor integrated circuit has a pad and a passivation layer partially covering the pad to define a first opening portion having a first lateral size. The conductive structure electrically connects to the pad via the first opening portion. The conductive structure comprises a support layer defining a second opening portion. A conductor is formed in the second opening portion to serve as a bump having a planar top surface.
摘要:
A packaging conductive structure for a semiconductor substrate and a method for forming the structure are provided. The dielectric layer of the packaging conductive structure partially overlays the metallic layer of the semiconductor substrate and has a receiving space. The lifting layer and conductive layer are formed in the receiving space, wherein the conductive layer extends for connection to a bump. The lifting layer is partially connected to the dielectric layer. As a result, the conductive layer can be stably deposited on the edge of the dielectric layer for enhancing the reliability of the packaging conductive structure.
摘要:
A chip bump structure is formed on a substrate. The substrate includes at least one contact pad and a dielectric layer. The dielectric layer has at least one opening. The at least one opening exposes the at least one contact pad. The chip bump structure includes at least one elastic bump, at least one first metal layer, at least one second metal layer, and at least one solder ball. The at least one elastic bump covers a central portion of the at least one contact pad. The at least one first metal layer covers the at least one elastic bump. The at least one first metal layer has a portion of the at least one contact pad. The portion of the at least one contact pad is not overlaid by the at least one elastic bump. The at least one second metal layer is formed on a portion of the at least one first metal layer. The portion of the at least one first metal layer is located on the top of the at least one elastic bump. The at least one solder ball is formed on the at least one second metal layer. The at least one solder ball is also on the top of the at least one elastic bump.
摘要:
A packaging conductive structure for a semiconductor substrate and a method for forming the structure are provided. The dielectric layer of the packaging conductive structure partially overlays the metallic layer of the semiconductor substrate and has a receiving space. The lifting layer and conductive layer are formed in the receiving space, wherein the conductive layer extends for connection to a bump. The lifting layer is partially connected to the dielectric layer. As a result, the conductive layer can be stably deposited on the edge of the dielectric layer for enhancing the reliability of the packaging conductive structure.
摘要:
A conductive structure for a semiconductor integrated circuit and method for forming the conductive structure are provided. The semiconductor integrated circuit has a pad and a passivation layer partially covering the pad to define a first opening portion having a first lateral size. The conductive structure electrically connects to the pad via the first opening portion. The conductive structure comprises a support layer defining a second opening portion. A conductor is formed in the second opening portion to serve as a bump having a planar top surface.
摘要:
A packaging conductive structure for a semiconductor substrate and a method for forming the structure are provided. The dielectric layer of the packaging conductive structure partially overlays the metallic layer of the semiconductor substrate and has a receiving space. The lifting layer and conductive layer are formed in the receiving space, wherein the conductive layer extends for connection to a bump. The lifting layer is partially connected to the dielectric layer. As a result, the conductive layer can be stably deposited on the edge of the dielectric layer for enhancing the reliability of the packaging conductive structure.