公开(公告)号：US20090273390A1

公开(公告)日：2009-11-05

申请号：US12433009

申请日：2009-04-30

申请人： JOSHUA D. CALDWELL ,  Robert E. Stahlbush ,  Karl D. Hobart ,  Marko J. Tadjer ,  Orest J. Glembocki

发明人： JOSHUA D. CALDWELL ,  Robert E. Stahlbush ,  Karl D. Hobart ,  Marko J. Tadjer ,  Orest J. Glembocki

IPC分类号： H03K3/01 ,  H01L21/00

CPC分类号： H01L29/1608 ,  H01L21/0445 ,  H01L29/6606 ,  Y10S438/931

摘要： A method of reversing Shockley stacking fault expansion includes providing a bipolar or a unipolar SiC device exhibiting forward voltage drift caused by Shockley stacking fault nucleation and expansion. The SiC device is heated to a temperature above 150° C. A current is passed via forward bias operation through the SiC device sufficient to induce at least a partial recovery of the forward bias drift.

摘要翻译： 一种逆相Shockley堆垛层错扩张的方法包括提供双相或单极SiC器件，其显示由Shockley堆垛层错层析和扩展引起的正向电压漂移。 SiC器件被加热到高于150℃的温度。电流通过正向偏压操作通过SiC器件足以诱导正向偏置漂移的至少部分恢复。

公开(公告)号：US20090090918A1

公开(公告)日：2009-04-09

申请号：US12205652

申请日：2008-09-05

申请人： Karl D. Hobart ,  Tatyana I. Feygelson ,  Marko J. Tadjer ,  Joshua D. Caldwell ,  Kendrick X. Liu ,  Francis J. Kub

发明人： Karl D. Hobart ,  Tatyana I. Feygelson ,  Marko J. Tadjer ,  Joshua D. Caldwell ,  Kendrick X. Liu ,  Francis J. Kub

IPC分类号： H01L31/0312 ,  H01L21/02

CPC分类号： H01S5/183 ,  H01L21/0495 ,  H01L29/6606 ,  H01S5/0425 ,  H01S5/32341

摘要： A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n− and p− SiC epilayers. I-V measurements on p+ NCD/n− SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.

摘要翻译： 开发了NCD和4H-SiC薄膜之间的异质结。 未掺杂和B掺杂的NCD沉积在n-和p- SiC外延层上。 在p + NCD / n-SiC上的IV测量显示肖特基整流行为具有约0.2V的导通电压。电流增加超过8个数量级，在30℃下的理想因子为1.17。理想的能带图表示 从SiC导带到NCD膜的价带或受体水平的电子传输的可能传导机制。

公开(公告)号：US20150056763A1

公开(公告)日：2015-02-26

申请号：US14464406

申请日：2014-08-20

申请人： Karl D. Hobart ,  Tatyana I. Feygelson ,  Eugene A. Imhoff ,  Travis J. Anderson ,  Joshua D. Caldwell ,  Andrew D. Koehler ,  Bradford B. Pate ,  Marko J. Tadjer ,  Randijer S. Sandhu ,  Vincent Gambin ,  Gregory Lewis ,  Ioulia Smorchkova ,  Mark Goorsky ,  Jeff McKay

发明人： Karl D. Hobart ,  Tatyana I. Feygelson ,  Eugene A. Imhoff ,  Travis J. Anderson ,  Joshua D. Caldwell ,  Andrew D. Koehler ,  Bradford B. Pate ,  Marko J. Tadjer ,  Randijer S. Sandhu ,  Vincent Gambin ,  Gregory Lewis ,  Ioulia Smorchkova ,  Mark Goorsky ,  Jeff McKay

IPC分类号： H01L29/66 ,  H01L23/373 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/311 ,  H01L29/20 ,  H01L21/02

CPC分类号： H01L29/66462 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0254 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/76802 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/3732 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/778 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device, such as a GaN high electron mobility transistor (HEMT) device, including etching a thermal via into a back-side of a semiconductor substrate and depositing a diamond nucleation seed layer across the back-side of the substrate. The method further includes coating the diamond nucleation with a mask layer and removing mask material outside of the thermal via on the planar portions of the back-side of the substrate. The method includes removing portions of the diamond nucleation layer on the planar portions and then removing the remaining portion of the mask material in the thermal via. The method then includes depositing a bulk diamond layer within the thermal via on the remaining portion of the diamond nucleation layer so that diamond only grows in the thermal via and not on the planar portions of the substrate.

摘要翻译： 一种用于制造诸如GaN高电子迁移率晶体管（HEMT）器件的半导体器件的方法，包括将热通孔蚀刻到半导体衬底的背面中并且沉积金刚石成核种子层跨越衬底的背面 。 该方法还包括用掩模层涂覆金刚石成核，并在衬底背面的平面部分上去除热通孔外部的掩模材料。 该方法包括去除平面部分上的金刚石成核层的部分，然后去除热通孔中掩模材料的剩余部分。 该方法然后包括在金刚石成核层的剩余部分上的热通孔内沉积体金刚石层，使得金刚石仅在基底的热通孔而不是平面部分上生长。

公开(公告)号：US08445383B2

公开(公告)日：2013-05-21

申请号：US12205652

申请日：2008-09-05

申请人： Karl D. Hobart ,  Tatyana I Feygelson ,  Marko J Tadjer ,  Joshua D. Caldwell ,  Kendrick X Liu ,  Francis J. Kub ,  Michael A Mastro ,  James E Butler

发明人： Karl D. Hobart ,  Tatyana I Feygelson ,  Marko J Tadjer ,  Joshua D. Caldwell ,  Kendrick X Liu ,  Francis J. Kub ,  Michael A Mastro ,  James E Butler

IPC分类号： H01L21/302

CPC分类号： H01S5/183 ,  H01L21/0495 ,  H01L29/6606 ,  H01S5/0425 ,  H01S5/32341

摘要： A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n− and p− SiC epilayers. I-V measurements on p+ NCD/n− SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.

摘要翻译： 开发了NCD和4H-SiC薄膜之间的异质结。 未掺杂和B掺杂的NCD沉积在n-和p- SiC外延层上。 在p + NCD / n-SiC上的IV测量显示肖特基整流行为具有约0.2V的导通电压。电流增加超过8个数量级，在30℃下的理想因子为1.17。理想的能带图表示 从SiC导带到NCD膜的价带或受体水平的电子传输的可能传导机制。

公开(公告)号：US09331163B2

公开(公告)日：2016-05-03

申请号：US14471310

申请日：2014-08-28

申请人： Andrew D. Koehler ,  Travis J. Anderson ,  Marko J. Tadjer ,  Tatyana I. Feygelson ,  Karl D. Hobart

发明人： Andrew D. Koehler ,  Travis J. Anderson ,  Marko J. Tadjer ,  Tatyana I. Feygelson ,  Karl D. Hobart

IPC分类号： H01L29/43 ,  H01L29/267 ,  H01L29/66 ,  H01L29/778 ,  H01L29/20 ,  H01L29/10

CPC分类号： H01L29/475 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/7786

摘要： A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN high-electron-mobility transistor (HEMT). The diamond gate electrode is formed so that it directly contacts the barrier layer. In some embodiments, the diamond gate electrode is formed from boron-doped nanocrystalline diamond (NCD), while in other embodiments, the diamond gate electrode is formed from single crystal diamond.

摘要翻译： 具有金刚石栅电极的场效应晶体管及其形成方法。 在一些实施例中，该器件是AlGaN / GaN高电子迁移率晶体管（HEMT）。 金刚石栅电极形成为使其直接接触阻挡层。 在一些实施例中，金刚石栅电极由掺杂硼的纳米晶体金刚石（NCD）形成，而在其它实施例中，金刚石栅电极由单晶金刚石形成。

公开(公告)号：US20150348866A1

公开(公告)日：2015-12-03

申请号：US14820750

申请日：2015-08-07

申请人： Karl D. Hobart ,  Marko J. Tadjer ,  Tatyana I. Feygelson ,  Bradford B. Pate ,  Travis J. Anderson

发明人： Karl D. Hobart ,  Marko J. Tadjer ,  Tatyana I. Feygelson ,  Bradford B. Pate ,  Travis J. Anderson

IPC分类号： H01L23/373 ,  H01L23/367

CPC分类号： H01L23/3732 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02645 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/481 ,  H01L29/0657 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

摘要： An array of through-silicon vias (TSVs) are formed in a silicone substrate. The vias can be tapered such that the diameter of the via at the surface of the substrate is larger than the diameter of the via at its bottom, with the diameter varying continuously along its depth. After the via is formed, it is seeded with a thin layer of nanocrystalline diamond (NCD) particles, and a NCD film is grown on the bottom and along the sidewalls of the via. The presence of the diamond-filled vias provides improved thermal management to semiconductor devices formed on the silicon substrate.

摘要翻译： 在硅树脂衬底中形成硅通孔阵列（TSV）。 通孔可以是锥形的，使得基底表面处的通孔的直径大于其底部的通孔的直径，其直径沿其深度连续变化。 在形成通孔之后，用纳米晶金刚石（NCD）颗粒的薄层接种，并且在底部和沿着通孔的侧壁上生长NCD膜。 金刚石填充的通孔的存在为在硅衬底上形成的半导体器件提供了改进的热管理。

公开(公告)号：US09159641B2

公开(公告)日：2015-10-13

申请号：US14211247

申请日：2014-03-14

申请人： Karl D. Hobart ,  Marko J. Tadjer ,  Tatyana I. Feygelson ,  Bradford B. Pate ,  Travis J. Anderson

发明人： Karl D. Hobart ,  Marko J. Tadjer ,  Tatyana I. Feygelson ,  Bradford B. Pate ,  Travis J. Anderson

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L23/373 ,  H01L29/778 ,  H01L29/16 ,  H01L23/367 ,  H01L23/48 ,  H01L29/06 ,  H01L29/20

CPC分类号： H01L23/3732 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02645 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/481 ,  H01L29/0657 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

摘要： An array of through-silicon vias (TSVs) are formed in a silicone substrate. The vias can be tapered such that the diameter of the via at the surface of the substrate is larger than the diameter of the via at its bottom, with the diameter varying continuously along its depth. After the via is formed, it is seeded with a thin layer of nanocrystalline diamond (NCD) particles, and a NCD film is grown on the bottom and along the sidewalls of the via. The presence of the diamond-filled vias provides improved thermal management to semiconductor devices formed on the silicon substrate.

摘要翻译： 在硅树脂衬底中形成硅通孔阵列（TSV）。 通孔可以是锥形的，使得基底表面处的通孔的直径大于其底部的通孔的直径，其直径沿其深度连续变化。 在形成通孔之后，用纳米晶金刚石（NCD）颗粒的薄层接种，并且在底部和沿着通孔的侧壁上生长NCD膜。 金刚石填充的通孔的存在为在硅衬底上形成的半导体器件提供了改进的热管理。

公开(公告)号：US20150060947A1

公开(公告)日：2015-03-05

申请号：US14471310

申请日：2014-08-28

申请人： Andrew D. Koehler ,  Travis J. Anderson ,  Marko J. Tadjer ,  Tatyana I. Feygelson ,  Karl D. Hobart

发明人： Andrew D. Koehler ,  Travis J. Anderson ,  Marko J. Tadjer ,  Tatyana I. Feygelson ,  Karl D. Hobart

IPC分类号： H01L29/43 ,  H01L29/78 ,  H01L29/80 ,  H01L29/66 ,  H01L29/49 ,  H01L21/28 ,  H01L21/283 ,  H01L29/778 ,  H01L29/45

CPC分类号： H01L29/475 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/7786

摘要： A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN high-electron-mobility transistor (HEMT). The diamond gate electrode is formed so that it directly contacts the barrier layer. In some embodiments, the diamond gate electrode is formed from boron-doped nanocrystalline diamond (NCD), while in other embodiments, the diamond gate electrode is formed from single crystal diamond.

摘要翻译： 具有金刚石栅电极的场效应晶体管及其形成方法。 在一些实施例中，器件是AlGaN / GaN高电子迁移率晶体管（HEMT）。 金刚石栅电极形成为使其直接接触阻挡层。 在一些实施例中，金刚石栅电极由掺杂硼的纳米晶体金刚石（NCD）形成，而在其它实施例中，金刚石栅电极由单晶金刚石形成。

公开(公告)号：US09305858B2

公开(公告)日：2016-04-05

申请号：US14820750

申请日：2015-08-07

申请人： Karl D. Hobart ,  Marko J. Tadjer ,  Tatyana I. Feygelson ,  Bradford B. Pate ,  Travis J. Anderson

发明人： Karl D. Hobart ,  Marko J. Tadjer ,  Tatyana I. Feygelson ,  Bradford B. Pate ,  Travis J. Anderson

IPC分类号： H01L29/00 ,  H01L29/06 ,  G12B21/02 ,  H01L23/373 ,  H01L29/778 ,  H01L29/16 ,  H01L23/367 ,  H01L23/48 ,  H01L21/02 ,  H01L29/20

CPC分类号： H01L23/3732 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02645 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/481 ,  H01L29/0657 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

摘要： An array of through-silicon vias (TSVs) are formed in a silicone substrate. The vias can be tapered such that the diameter of the via at the surface of the substrate is larger than the diameter of the via at its bottom, with the diameter varying continuously along its depth. After the via is formed, it is seeded with a thin layer of nanocrystalline diamond (NCD) particles, and a NCD film is grown on the bottom and along the sidewalls of the via. The presence of the diamond-filled vias provides improved thermal management to semiconductor devices formed on the silicon substrate.

公开(公告)号：US20140264777A1

公开(公告)日：2014-09-18

申请号：US14211247

申请日：2014-03-14

申请人： Karl D. Hobart ,  Marko J. Tadjer ,  Tatyana I. Feygelson ,  Bradford B. Pate ,  Travis J. Anderson

发明人： Karl D. Hobart ,  Marko J. Tadjer ,  Tatyana I. Feygelson ,  Bradford B. Pate ,  Travis J. Anderson

IPC分类号： H01L23/373 ,  H01L21/02

CPC分类号： H01L23/3732 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02645 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/481 ,  H01L29/0657 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

摘要： An array of through-silicon vias (TSVs) are formed in a silicone substrate. The vias can be tapered such that the diameter of the via at the surface of the substrate is larger than the diameter of the via at its bottom, with the diameter varying continuously along its depth. After the via is formed, it is seeded with a thin layer of nanocrystalline diamond (NCD) particles, and a NCD film is grown on the bottom and along the sidewalls of the via. The presence of the diamond-filled vias provides improved thermal management to semiconductor devices formed on the silicon substrate.

摘要翻译： 在硅树脂衬底中形成硅通孔阵列（TSV）。 通孔可以是锥形的，使得基底表面处的通孔的直径大于其底部的通孔的直径，其直径沿其深度连续变化。 在形成通孔之后，用纳米晶金刚石（NCD）颗粒的薄层接种，并且在底部和沿着通孔的侧壁上生长NCD膜。 金刚石填充的通孔的存在为在硅衬底上形成的半导体器件提供了改进的热管理。