公开(公告)号：US08512473B2

公开(公告)日：2013-08-20

申请号：US12881759

申请日：2010-09-14

申请人： Jae-Mork Park ,  You-Min Cha ,  Won-Seok Cho ,  Jae-Hong Ahn ,  Min-Jeong Hwang

发明人： Jae-Mork Park ,  You-Min Cha ,  Won-Seok Cho ,  Jae-Hong Ahn ,  Min-Jeong Hwang

IPC分类号： C23C16/458 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01L21/682 ,  C23C14/042 ,  H01L51/001 ,  H01L51/56

摘要： A substrate centering device for an organic material deposition system comprises: a plurality of substrate support holders configured to be reciprocally movable in a facing direction within an organic material deposition chamber and supporting both side portions of a substrate loaded by a robot; a substrate centering unit configured to be reciprocally movable at each of the substrate support holders and centering the substrate by guiding both side portions of the substrate; and a plurality of substrate clampers configured to be reciprocally movable in a vertical direction at each of the substrate support holders, and clamping the substrate that has been centered by the substrate centering unit.

摘要翻译： 一种用于有机材料沉积系统的基板定心装置，包括：多个基板支撑保持器，其构造成可在有机材料沉积室内面向相反方向往复运动，并支撑由机器人装载的基板的两侧部分; 基板定心单元，其构造成在每个基板支撑保持器处可往复运动，并且通过引导基板的两个侧部对准基板; 以及多个基板夹持器，其构造成在每个基板支撑保持器处在垂直方向上往复运动，并且夹持由基板定心单元居中的基板。

公开(公告)号：US20100304025A1

公开(公告)日：2010-12-02

申请号：US12770175

申请日：2010-04-29

申请人： Min-Jeong Hwang ,  You-Min Cha ,  Won-Seok Cho ,  Jae-Mork Park ,  Jae-Wan Park ,  Jae-Hong Ahn

发明人： Min-Jeong Hwang ,  You-Min Cha ,  Won-Seok Cho ,  Jae-Mork Park ,  Jae-Wan Park ,  Jae-Hong Ahn

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： C23C16/54 ,  C23C14/568

摘要： A deposition apparatus including a plurality of reaction chambers, and a method of controlling the deposition apparatus. The deposition apparatus includes a first chamber to deposit a first deposition material onto a deposition body, a second chamber to deposit a second and different deposition material onto the deposition body, a third chamber to deposit the first deposition material onto the deposition body, a transfer chamber connected to the first through third chambers, the transfer chamber to transfer the deposition body to ones of the first through third chambers and a control unit to transport the deposition body from the transfer chamber to ones of the first through third chambers.

摘要翻译： 包括多个反应室的沉积设备以及控制该沉积设备的方法。 沉积装置包括：第一室，用于将第一沉积材料沉积到沉积体上;第二室，用于将第二和不同的沉积材料沉积到沉积体上;第三室，将第一沉积材料沉积到沉积体上， 连接到第一至第三腔室的传送室，传送室将沉积体转移到第一至第三腔室中的一个;以及控制单元，用于将沉积体从传送室输送到第一至第三腔室中的一个。

公开(公告)号：US20100275842A1

公开(公告)日：2010-11-04

申请号：US12659987

申请日：2010-03-26

申请人： Jae-Wan Park ,  You-Min Cha ,  Jae-Hong Ahn ,  Won-Seok Cho ,  Jae-Mork Park ,  Min-Jeong Hwang

发明人： Jae-Wan Park ,  You-Min Cha ,  Jae-Hong Ahn ,  Won-Seok Cho ,  Jae-Mork Park ,  Min-Jeong Hwang

IPC分类号： C23C16/00

CPC分类号： C23C14/243 ,  C23C14/044

摘要： Provided is an evaporating apparatus that deposits a deposition material onto a treatment object. The evaporating apparatus includes a base, a deposition source, and first and second correction units. The deposition source deposits the deposition material onto the treatment object. The base is disposed separately from the treatment object. The deposition source is placed on a surface of the base. The first and second correction units located between the deposition source and the treatment object. The first and second correction units are disposed on outer regions of the deposition source and face each other. Each of the first and second correction units rotates to control the thickness of a layer formed by the deposition material deposited on the treatment object.

摘要翻译： 提供了一种将沉积材料沉积到处理物体上的蒸发装置。 蒸发装置包括基座，沉积源以及第一和第二校正单元。 沉积源将沉积材料沉积到处理对象上。 基座与治疗对象分开设置。 沉积源放置在基底的表面上。 位于沉积源和处理对象之间的第一和第二校正单元。 第一和第二校正单元设置在沉积源的外部区域上并且彼此面对。 第一和第二校正单元中的每一个旋转以控制由沉积在处理对象上的沉积材料形成的层的厚度。

公开(公告)号：US08961692B2

公开(公告)日：2015-02-24

申请号：US12659987

申请日：2010-03-26

申请人： Jae-Wan Park ,  You-Min Cha ,  Jae-Hong Ahn ,  Won-Seok Cho ,  Jae-Mork Park ,  Min-Jeong Hwang

发明人： Jae-Wan Park ,  You-Min Cha ,  Jae-Hong Ahn ,  Won-Seok Cho ,  Jae-Mork Park ,  Min-Jeong Hwang

IPC分类号： C23C16/00 ,  C23C14/24 ,  C23C14/04

CPC分类号： C23C14/243 ,  C23C14/044

摘要： Provided is an evaporating apparatus that deposits a deposition material onto a treatment object. The evaporating apparatus includes a base, a deposition source, and first and second correction units. The deposition source deposits the deposition material onto the treatment object. The base is disposed separately from the treatment object. The deposition source is placed on a surface of the base. The first and second correction units located between the deposition source and the treatment object. The first and second correction units are disposed on outer regions of the deposition source and face each other. Each of the first and second correction units rotates to control the thickness of a layer formed by the deposition material deposited on the treatment object.

摘要翻译： 提供了一种将沉积材料沉积到处理物体上的蒸发装置。 蒸发装置包括基座，沉积源以及第一和第二校正单元。 沉积源将沉积材料沉积到处理对象上。 基座与治疗对象分开设置。 沉积源放置在基底的表面上。 位于沉积源和处理对象之间的第一和第二校正单元。 第一和第二校正单元设置在沉积源的外部区域上并且彼此面对。 第一和第二校正单元中的每一个旋转以控制由沉积在处理对象上的沉积材料形成的层的厚度。

公开(公告)号：US20110073042A1

公开(公告)日：2011-03-31

申请号：US12881759

申请日：2010-09-14

申请人： Jae-Mork Park ,  You-Min Cha ,  Won-Seok Cho ,  Jae-Hong Ahn ,  Min-Jeong Hwang

发明人： Jae-Mork Park ,  You-Min Cha ,  Won-Seok Cho ,  Jae-Hong Ahn ,  Min-Jeong Hwang

IPC分类号： C23C16/458 ,  C23C16/00

CPC分类号： H01L21/682 ,  C23C14/042 ,  H01L51/001 ,  H01L51/56

摘要： A substrate centering device for an organic material deposition system comprises: a plurality of substrate support holders configured to be reciprocally movable in a facing direction within an organic material deposition chamber and supporting both side portions of a substrate loaded by a robot; a substrate centering unit configured to be reciprocally movable at each of the substrate support holders and centering the substrate by guiding both side portions of the substrate; and a plurality of substrate clampers configured to be reciprocally movable in a vertical direction at each of the substrate support holders, and clamping the substrate that has been centered by the substrate centering unit.

摘要翻译： 一种用于有机材料沉积系统的基板定心装置，包括：多个基板支撑保持器，其构造成可在有机材料沉积室内面向相反方向往复运动，并支撑由机器人装载的基板的两侧部分; 基板定心单元，其构造成在每个基板支撑保持器处可往复运动，并且通过引导基板的两个侧部对准基板; 以及多个基板夹持器，其构造成在每个基板支撑保持器处在垂直方向上往复运动，并且夹持由基板定心单元居中的基板。

公开(公告)号：US20130302134A1

公开(公告)日：2013-11-14

申请号：US13942514

申请日：2013-07-15

申请人： Jae-Mork Park ,  You-Min Cha ,  Won-Seok Cho ,  Jae-Hong Ahn ,  Min-Jeong Hwang

发明人： Jae-Mork Park ,  You-Min Cha ,  Won-Seok Cho ,  Jae-Hong Ahn ,  Min-Jeong Hwang

IPC分类号： H01L21/68

CPC分类号： H01L21/682 ,  C23C14/042 ,  H01L51/001 ,  H01L51/56

摘要： A substrate centering device for an organic material deposition system comprises: a plurality of substrate support holders configured to be reciprocally movable in a facing direction within an organic material deposition chamber and supporting both side portions of a substrate loaded by a robot; a substrate centering unit configured to be reciprocally movable at each of the substrate support holders and centering the substrate by guiding both side portions of the substrate; and a plurality of substrate clampers configured to be reciprocally movable in a vertical direction at each of the substrate support holders, and clamping the substrate that has been centered by the substrate centering unit.

摘要翻译： 一种用于有机材料沉积系统的基板定心装置，包括：多个基板支撑保持器，其构造成可在有机材料沉积室内面向相反方向往复运动，并支撑由机器人装载的基板的两侧部分; 基板定心单元，其构造成在每个基板支撑保持器处可往复运动，并且通过引导基板的两个侧部对准基板; 以及多个基板夹持器，其构造成在每个基板支撑保持器处在垂直方向上往复运动，并且夹持由基板定心单元居中的基板。

公开(公告)号：US20120009767A1

公开(公告)日：2012-01-12

申请号：US13236000

申请日：2011-09-19

申请人： Young-Chul JANG ,  Won-Seok Cho ,  Jae-Hoon Jang ,  Soon-Moon Jung ,  Yang-Soo Son ,  Min-Sung Song

发明人： Young-Chul JANG ,  Won-Seok Cho ,  Jae-Hoon Jang ,  Soon-Moon Jung ,  Yang-Soo Son ,  Min-Sung Song

IPC分类号： H01L21/20

CPC分类号： H01L27/0688 ,  H01L27/105 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11551

摘要： A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region.

摘要翻译： 半导体器件包括：半导体衬底，包括具有单元区域的第一区域和具有外围电路区域的第二区域;半导体衬底上的第一晶体管;覆盖第一晶体管的第一保护层;第一保护层上的第一绝缘层; ，第一区域中的第一绝缘层上的半导体图案，半导体图案上的第二晶体管，覆盖第二晶体管的第二保护层，第二保护层的厚度大于第一保护层的厚度，第二绝缘层 在第二保护层和第二区域的第一绝缘层上。

公开(公告)号：US20090233405A1

公开(公告)日：2009-09-17

申请号：US12474896

申请日：2009-05-29

申请人： Hoo-Sung Cho ,  Soon-Moon Jung ,  Won-Seok Cho ,  Jong-Hyuk Kim ,  Jae-Hun Jeong ,  Jae-Hoon Jang

发明人： Hoo-Sung Cho ,  Soon-Moon Jung ,  Won-Seok Cho ,  Jong-Hyuk Kim ,  Jae-Hun Jeong ,  Jae-Hoon Jang

IPC分类号： H01L21/336

CPC分类号： H01L27/11524 ,  H01L27/0688 ,  H01L27/11551

摘要： Methods of forming a NAND-type nonvolatile memory device include: forming first common drains and first common sources alternatively in an active region which is defined in a semiconductor substrate and extends one direction, forming a first insulating layer covering an entire surface of the semiconductor substrate, patterning the first insulating layer to form seed contact holes which are arranged at regular distance and expose the active region, forming a seed contact structure filling each of the seed contact holes and a semiconductor layer disposed on the first insulating layer and contacting the seed contact structures, patterning the semiconductor layer to form a semiconductor pattern which extends in the one direction and is disposed over the active region, forming second common drains and second common sources disposed alternatively in the semiconductor pattern in the one direction, forming a second insulating layer covering an entire surface of the semiconductor substrate, forming a source line pattern continuously penetrating the second insulating layer, the semiconductor pattern and the first insulating layer, the source line pattern being connected with the first and second common sources, wherein a grain boundary of the semiconductor layer is positioned at a center between the one pair of seed contact structures adjacent to each other, and is positioned over the first common drain or the first common source.

摘要翻译： 形成NAND型非易失性存储器件的方法包括：在半导体衬底中限定的有源区域中交替形成第一公共漏极和第一公共源，并延伸一个方向，形成覆盖半导体衬底的整个表面的第一绝缘层 图案化第一绝缘层以形成以规则距离布置的暴露有源区域的种子接触孔，形成填充每个种子接触孔的种子接触结构以及设置在第一绝缘层上并接触种子接触的半导体层 结构，图案化所述半导体层以形成在所述一个方向上延伸并设置在所述有源区上方的半导体图案，形成沿所述一个方向交替设置在所述半导体图案中的第二公共漏极和第二公共源，形成第二绝缘层覆盖层 半导体衬底的整个表面 使源极线图案连续地穿过第二绝缘层，半导体图案和第一绝缘层，源极线图案与第一和第二共用源连接，其中半导体层的晶界位于第二绝缘层之间的中心 一对种子接触结构彼此相邻，并且位于第一公共漏极或第一公共源的上方。

公开(公告)号：US07554140B2

公开(公告)日：2009-06-30

申请号：US11651892

申请日：2007-01-10

申请人： Hoo-Sung Cho ,  Soon-Moon Jung ,  Won-Seok Cho ,  Jong-Hyuk Kim ,  Jae-Hun Jeong ,  Jae-Hoon Jang

发明人： Hoo-Sung Cho ,  Soon-Moon Jung ,  Won-Seok Cho ,  Jong-Hyuk Kim ,  Jae-Hun Jeong ,  Jae-Hoon Jang

IPC分类号： H01L31/062

CPC分类号： H01L27/11524 ,  H01L27/0688 ,  H01L27/11551

摘要： Provided is a NAND-type nonvolatile memory device and method of forming the same. In the method, a plurality of cell layers are stacked on a semiconductor substrate. Seed contact holes for forming a semiconductor pattern included in a stacked cell are formed at regular distance. At this time, the seed contact holes are arranged such that a bit line plug or a source line pattern is disposed at a center between one pair of seed contact holes adjacent to each other.

摘要翻译： 提供了一种NAND型非易失性存储器件及其形成方法。 在该方法中，多个单元层层叠在半导体基板上。 用于形成包含在层叠电池中的半导体图案的种子接触孔以规则的距离形成。 此时，种子接触孔布置成使得位线插头或源极线图案设置在彼此相邻的一对种子接触孔之间的中心处。

公开(公告)号：US07405450B2

公开(公告)日：2008-07-29

申请号：US10777297

申请日：2004-02-12

申请人： Gyu-Ho Lyu ,  Soon-moon Jung ,  Sung-bong Kim ,  Hoon Lim ,  Won-Seok Cho

发明人： Gyu-Ho Lyu ,  Soon-moon Jung ,  Sung-bong Kim ,  Hoon Lim ,  Won-Seok Cho

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L23/522 ,  H01L21/76895 ,  H01L21/823842 ,  H01L21/823871 ,  H01L2924/0002 ,  Y10S257/90 ,  H01L2924/00

摘要： Semiconductor devices that include a semiconductor substrate and a gate line are provided. The gate line is on the semiconductor substrate and includes a gate insulation pattern and a gate electrode which are stacked on the substrate in the order named. A spacer is on a sidewall of the gate line. A conductive line pattern is on the gate line. The conductive line pattern is parallel with the gate line and is electrically connected to the gate electrode.

摘要翻译： 提供包括半导体衬底和栅极线的半导体器件。 栅极线在半导体衬底上，并且包括按照命名层叠在衬底上的栅极绝缘图案和栅极电极。 间隔物位于栅极线的侧壁上。 导线图案位于栅极线上。 导电线图案与栅极线平行并且电连接到栅电极。