公开(公告)号：US08592985B2

公开(公告)日：2013-11-26

申请号：US13443141

申请日：2012-04-10

申请人： Jaydeb Goswami ,  Hung Ming Tsai ,  Duane M. Goodner

发明人： Jaydeb Goswami ,  Hung Ming Tsai ,  Duane M. Goodner

IPC分类号： H01L23/48

CPC分类号： H01L23/53252 ,  C23C16/045 ,  H01L21/743 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/528 ,  H01L23/53257 ,  H01L23/53266 ,  H01L27/10876 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

摘要： Some embodiments include methods of forming conductive structures. An electrically conductive material may be deposited with a first deposition method. The first deposition method has a first deposition rate and forms a first portion of a conductive structure. A second portion of the conductive structure may be formed by depositing the electrically conductive material with a second deposition method having a second deposition rate. The second deposition rate may be different from the first deposition rate by at least about a factor of 3. In some embodiments, a region of the conductive structure is utilized as a transistor gate of a DRAM cell. Some embodiments include semiconductor constructions.

摘要翻译： 一些实施例包括形成导电结构的方法。 可以用第一沉积方法沉积导电材料。 第一沉积方法具有第一沉积速率并形成导电结构的第一部分。 导电结构的第二部分可以通过用具有第二沉积速率的第二沉积方法沉积导电材料来形成。 第二沉积速率可以不同于第一沉积速率至少约3倍。在一些实施例中，导电结构的区域用作DRAM单元的晶体管栅极。 一些实施例包括半导体结构。

公开(公告)号：US20130264713A1

公开(公告)日：2013-10-10

申请号：US13443141

申请日：2012-04-10

申请人： Jaydeb Goswami ,  Hung Ming Tsai ,  Duane M. Goodner

发明人： Jaydeb Goswami ,  Hung Ming Tsai ,  Duane M. Goodner

IPC分类号： H01L29/43 ,  C23C16/34 ,  H01L21/8242 ,  C23C16/40 ,  B05D3/02 ,  B05D5/12 ,  C23C16/06

CPC分类号： H01L23/53252 ,  C23C16/045 ,  H01L21/743 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/528 ,  H01L23/53257 ,  H01L23/53266 ,  H01L27/10876 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

摘要： Some embodiments include methods of forming conductive structures. An electrically conductive material may be deposited with a first deposition method. The first deposition method has a first deposition rate and forms a first portion of a conductive structure. A second portion of the conductive structure may be formed by depositing the electrically conductive material with a second deposition method having a second deposition rate. The second deposition rate may be different from the first deposition rate by at least about a factor of 3. In some embodiments, a region of the conductive structure is utilized as a transistor gate of a DRAM cell. Some embodiments include semiconductor constructions.

摘要翻译： 一些实施例包括形成导电结构的方法。 可以用第一沉积方法沉积导电材料。 第一沉积方法具有第一沉积速率并形成导电结构的第一部分。 导电结构的第二部分可以通过用具有第二沉积速率的第二沉积方法沉积导电材料来形成。 第二沉积速率可以不同于第一沉积速率至少约3倍。在一些实施例中，导电结构的区域用作DRAM单元的晶体管栅极。 一些实施例包括半导体结构。

公开(公告)号：US08766347B2

公开(公告)日：2014-07-01

申请号：US13607230

申请日：2012-09-07

申请人： Duane M. Goodner ,  Sanjeev Sapra ,  Darwin Franseda Fan

发明人： Duane M. Goodner ,  Sanjeev Sapra ,  Darwin Franseda Fan

IPC分类号： H01L21/00

CPC分类号： H01L28/90

摘要： Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the sidewalls. Some embodiments include methods of forming capacitors in which an initial container-shaped storage node structure is formed to have a pair of upwardly-extending sidewalls along a cross-section, with the sidewalls being of thickness that is substantially constant or increasing from a base to a top of the initial structure. The initial structure is then converted into a modified storage node structure by reducing thicknesses of upper segments of the sidewalls while leaving thicknesses of lower segments of the sidewalls substantially unchanged. Capacitor dielectric material and capacitor electrode material are formed along the modified storage node structure.

摘要翻译： 一些实施例包括电容器。 电容器可以包括沿横截面具有一对向上延伸的侧壁的容器形存储节点结构。 单个侧壁可以在更宽的部分上具有较窄的部分。 电容介电材料和电容器电极材料可以沿着侧壁的较窄和较宽的部分。 一些实施例包括形成电容器的方法，其中初始容器形存储节点结构形成为沿着横截面具有一对向上延伸的侧壁，其侧壁的厚度基本上恒定或从基底到 初始结构的顶部。 然后通过减小侧壁的上段的厚度，同时使侧壁的下段的厚度基本上保持不变，将初始结构转换成修改的存储节点结构。 电容器电介质材料和电容器电极材料沿修改的存储节点结构形成。

公开(公告)号：US08865544B2

公开(公告)日：2014-10-21

申请号：US13546927

申请日：2012-07-11

申请人： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

发明人： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

IPC分类号： H01L21/8242

CPC分类号： H01L28/75 ,  B82Y30/00 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/90 ,  Y10S977/932 ,  Y10T428/265

摘要： Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.

摘要翻译： 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。

公开(公告)号：US20120187533A1

公开(公告)日：2012-07-26

申请号：US13010156

申请日：2011-01-20

申请人： Duane M. Goodner ,  Sanjeev Sapra ,  Darwin Franseda Fan

发明人： Duane M. Goodner ,  Sanjeev Sapra ,  Darwin Franseda Fan

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L28/90

摘要： Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the sidewalls. Some embodiments include methods of forming capacitors in which an initial container-shaped storage node structure is formed to have a pair of upwardly-extending sidewalls along a cross-section, with the sidewalls being of thickness that is substantially constant or increasing from a base to a top of the initial structure. The initial structure is then converted into a modified storage node structure by reducing thicknesses of upper segments of the sidewalls while leaving thicknesses of lower segments of the sidewalls substantially unchanged. Capacitor dielectric material and capacitor electrode material are formed along the modified storage node structure.

摘要翻译： 一些实施例包括电容器。 电容器可以包括沿横截面具有一对向上延伸的侧壁的容器形存储节点结构。 单个侧壁可以在更宽的部分上具有较窄的部分。 电容介电材料和电容器电极材料可以沿着侧壁的较窄和较宽的部分。 一些实施例包括形成电容器的方法，其中初始容器形存储节点结构形成为沿着横截面具有一对向上延伸的侧壁，其侧壁的厚度基本上恒定或从基底到 初始结构的顶部。 然后通过减小侧壁的上段的厚度，同时使侧壁的下段的厚度基本上保持不变，将初始结构转换成修改的存储节点结构。 电容器电介质材料和电容器电极材料沿修改的存储节点结构形成。

公开(公告)号：US08283236B2

公开(公告)日：2012-10-09

申请号：US13010156

申请日：2011-01-20

申请人： Duane M. Goodner ,  Sanjeev Sapra ,  Darwin Franseda Fan

发明人： Duane M. Goodner ,  Sanjeev Sapra ,  Darwin Franseda Fan

IPC分类号： H01L21/20

CPC分类号： H01L28/90

摘要： Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the sidewalls. Some embodiments include methods of forming capacitors in which an initial container-shaped storage node structure is formed to have a pair of upwardly-extending sidewalls along a cross-section, with the sidewalls being of thickness that is substantially constant or increasing from a base to a top of the initial structure. The initial structure is then converted into a modified storage node structure by reducing thicknesses of upper segments of the sidewalls while leaving thicknesses of lower segments of the sidewalls substantially unchanged. Capacitor dielectric material and capacitor electrode material are formed along the modified storage node structure.

摘要翻译： 一些实施例包括电容器。 电容器可以包括沿横截面具有一对向上延伸的侧壁的容器形存储节点结构。 单个侧壁可以在更宽的部分上具有较窄的部分。 电容介电材料和电容器电极材料可以沿着侧壁的较窄和较宽的部分。 一些实施例包括形成电容器的方法，其中初始容器形存储节点结构形成为沿着横截面具有一对向上延伸的侧壁，其侧壁的厚度基本上恒定或从基底到 初始结构的顶部。 然后通过减小侧壁的上段的厚度，同时使侧壁的下段的厚度基本上保持不变，将初始结构转换成修改的存储节点结构。 电容器电介质材料和电容器电极材料沿修改的存储节点结构形成。

公开(公告)号：US20140015097A1

公开(公告)日：2014-01-16

申请号：US13546927

申请日：2012-07-11

申请人： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

发明人： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

IPC分类号： H01L29/02 ,  H01L21/02

CPC分类号： H01L28/75 ,  B82Y30/00 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/90 ,  Y10S977/932 ,  Y10T428/265

摘要： Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.

摘要翻译： 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。

公开(公告)号：US20120326275A1

公开(公告)日：2012-12-27

申请号：US13607230

申请日：2012-09-07

申请人： Duane M. Goodner ,  Sanjeev Sapra ,  Darwin Franseda Fan

发明人： Duane M. Goodner ,  Sanjeev Sapra ,  Darwin Franseda Fan

IPC分类号： H01L29/92

CPC分类号： H01L28/90

摘要： Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the sidewalls. Some embodiments include methods of forming capacitors in which an initial container-shaped storage node structure is formed to have a pair of upwardly-extending sidewalls along a cross-section, with the sidewalls being of thickness that is substantially constant or increasing from a base to a top of the initial structure. The initial structure is then converted into a modified storage node structure by reducing thicknesses of upper segments of the sidewalls while leaving thicknesses of lower segments of the sidewalls substantially unchanged. Capacitor dielectric material and capacitor electrode material are formed along the modified storage node structure.

摘要翻译： 一些实施例包括电容器。 电容器可以包括沿横截面具有一对向上延伸的侧壁的容器形存储节点结构。 单个侧壁可以在更宽的部分上具有较窄的部分。 电容介电材料和电容器电极材料可以沿着侧壁的较窄和较宽的部分。 一些实施例包括形成电容器的方法，其中初始容器形存储节点结构形成为沿着横截面具有一对向上延伸的侧壁，其侧壁的厚度基本上恒定或从基底到 初始结构的顶部。 然后通过减小侧壁的上段的厚度，同时使侧壁的下段的厚度基本上保持不变，将初始结构转换成修改的存储节点结构。 电容器电介质材料和电容器电极材料沿修改的存储节点结构形成。