摘要:
A semiconductor device includes a substrate (10) that can be cut into different sizes. A plurality of wirebond fingers (12) are formed on a top surface (13) of the substrate (10). The plurality of wirebond fingers (12) are located within concentric interconnect regions (23, 25, 27, 29, 31, 33, 35) and electrically connected to a via (14) by a signal interconnect line (11). The size of substrate (10) can be altered by cutting the substrate (10) to remove any of the interconnect regions (23, 25, 27, 29, 31, 33, 35). A semiconductor component (44) attached to the top side (13) of the substrate (10) can have a die pad (48) wirebonded to any of the plurality of wirebond fingers (12) located along the signal interconnect line (11) for connection to the via (14).
摘要:
An integrated circuit package (60) has a substrate (12) with a first surface (51) for mounting a semiconductor die (20) and a second surface (52) defining a via (70). A lead (26) is formed by plating a conductive material to project outwardly from the second surface. The conductive material extends from the lead through the first via for coupling to the semiconductor die.
摘要:
An integrated circuit package (60) has a substrate (12) with a first surface (51) for mounting a semiconductor die (20) and a second surface (52) defining a via (70). A lead (26) is formed by plating a conductive material to project outwardly from the second surface. The conductive material extends from the lead through the first via for coupling to the semiconductor die.
摘要:
A semiconductor device (20) has a first leadframe (200) with a first semiconductor die (70) electrically coupled to one of its leads. A second semiconductor die (130) is mounted to a second leadframe (300) that has a first lead (35, 150) electrically coupled to the second semiconductor die and a second lead (30, 35) mounted to the lead of the first leadframe.
摘要:
A semiconductor device (20) has a first leadframe (200) with a first semiconductor die (70) electrically coupled to one of its leads. A second semiconductor die (130) is mounted to a second leadframe (300) that has a first lead (35, 150) electrically coupled to the second semiconductor die and a second lead (30, 35) mounted to the lead of the first leadframe.