Method to form an embedded micro-pedestal in a conductive layer
    1.
    发明授权
    Method to form an embedded micro-pedestal in a conductive layer 失效
    在导电层中形成嵌入式微基座的方法

    公开(公告)号:US07134182B2

    公开(公告)日:2006-11-14

    申请号:US10715020

    申请日:2003-11-17

    IPC分类号: G11B5/127 C23C14/00

    摘要: Conventional liftoff processes used to define track width in magnetic read heads can produce an uneven etch-depth of dielectric materials around the sensor and cause shorting to the overlay top lead layer. This problem has been overcome by printing the images of track width and stripe height onto an intermediate layer to form a hard mask. Through this hard mask, the GMR stack can be selectively etched and then back-filled with a high-resistivity material by using newly developed electroless plating processes.

    摘要翻译: 用于定义磁读头中的磁道宽度的传统的剥离过程可以在传感器周围产生介电材料的不均匀蚀刻深度,并导致覆盖顶层引线层的短路。 通过将轨道宽度和条纹高度的图像打印到中间层上以形成硬掩模已经克服了该问题。 通过这种硬掩模,可以通过使用新开发的无电镀方法来选择性地蚀刻GMR堆叠,然后用高电阻率材料反填充。

    Method of manufacturing integrated spin valve head
    6.
    发明授权
    Method of manufacturing integrated spin valve head 失效
    集成自旋阀头的制造方法

    公开(公告)号:US07162791B2

    公开(公告)日:2007-01-16

    申请号:US11011995

    申请日:2004-12-14

    IPC分类号: G11B5/127 G11B5/83 H04R31/00

    摘要: Currently, in a process of manufacturing a top spin valve structure, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer.

    摘要翻译: 目前,在制造顶部自旋阀结构的过程中,自旋阀头的屏蔽与屏蔽间隔不能低于约800,这主要是由于传感器与铅的短路问题。 现在已经通过在自旋阀传感器的顶部或底部(或两个)侧上插入高磁导率,高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率,其电阻率大约为自由层的电阻率的约5倍,薄膜屏蔽层的电阻值大于自由层的4倍 层。

    Process for manufacturing a top spin valve
    7.
    发明授权
    Process for manufacturing a top spin valve 失效
    制造顶部自旋阀的方法

    公开(公告)号:US07060321B2

    公开(公告)日:2006-06-13

    申请号:US11011994

    申请日:2004-12-14

    IPC分类号: B05D5/12 G11B5/84

    摘要: Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

    摘要翻译: 目前,自旋阀头的屏蔽到屏蔽分离不能低于约800,这主要是由于传感器到引线短路问题。 现在已经通过在自旋阀传感器的顶部或底部(或两个)侧上插入高磁导率,高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率,其电阻率大约为自由层的电阻率的约5倍,薄膜屏蔽层的电阻值大于自由层的4倍 层。 描述本发明的五个实施例。