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公开(公告)号:US07134182B2
公开(公告)日:2006-11-14
申请号:US10715020
申请日:2003-11-17
申请人: Jei-Wei Chang , Chao-Peng Chen , Youfeng Zheng
发明人: Jei-Wei Chang , Chao-Peng Chen , Youfeng Zheng
CPC分类号: G11B5/3903 , Y10S29/016 , Y10T29/49023 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048 , Y10T29/49128 , Y10T29/49155 , Y10T29/49156
摘要: Conventional liftoff processes used to define track width in magnetic read heads can produce an uneven etch-depth of dielectric materials around the sensor and cause shorting to the overlay top lead layer. This problem has been overcome by printing the images of track width and stripe height onto an intermediate layer to form a hard mask. Through this hard mask, the GMR stack can be selectively etched and then back-filled with a high-resistivity material by using newly developed electroless plating processes.
摘要翻译: 用于定义磁读头中的磁道宽度的传统的剥离过程可以在传感器周围产生介电材料的不均匀蚀刻深度,并导致覆盖顶层引线层的短路。 通过将轨道宽度和条纹高度的图像打印到中间层上以形成硬掩模已经克服了该问题。 通过这种硬掩模,可以通过使用新开发的无电镀方法来选择性地蚀刻GMR堆叠,然后用高电阻率材料反填充。
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公开(公告)号:US20050102820A1
公开(公告)日:2005-05-19
申请号:US10715020
申请日:2003-11-17
申请人: Jei-Wei Chang , Chao-Peng Chen , Youfeng Zheng
发明人: Jei-Wei Chang , Chao-Peng Chen , Youfeng Zheng
CPC分类号: G11B5/3903 , Y10S29/016 , Y10T29/49023 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048 , Y10T29/49128 , Y10T29/49155 , Y10T29/49156
摘要: Conventional liftoff processes used to define track width in magnetic read heads can produce an uneven etch-depth of dielectric materials around the sensor and cause shorting to the overlay top lead layer. This problem has been overcome by printing the images of track width and stripe height onto an intermediate layer to form a hard mask. Through this hard mask, the GMR stack can be selectively etched and then back-filled with a high-resistivity material by using newly developed electroless plating processes.
摘要翻译: 用于定义磁读头中的磁道宽度的传统的剥离过程可以在传感器周围产生介电材料的不均匀蚀刻深度,并导致覆盖顶层引线层的短路。 通过将轨道宽度和条纹高度的图像打印到中间层上以形成硬掩模已经克服了该问题。 通过这种硬掩模,可以通过使用新开发的无电镀方法来选择性地蚀刻GMR堆叠,然后用高电阻率材料反填充。
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公开(公告)号:US20070041124A1
公开(公告)日:2007-02-22
申请号:US11588564
申请日:2006-10-27
申请人: Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人: Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号: G11B5/09
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要: The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译: 通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题,以确保通过器件的电流仅流过 其中心区域,从而最小化其边缘读取灵敏度。
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公开(公告)号:US20050094323A1
公开(公告)日:2005-05-05
申请号:US11011994
申请日:2004-12-14
申请人: Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人: Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号: G01R33/09 , B05D7/00 , G11B5/127 , G11B5/187 , G11B5/29 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/12 , H04R31/00
CPC分类号: G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要: Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.
摘要翻译: 目前,自旋阀头的屏蔽到屏蔽分离不能低于约800,这主要是由于传感器到引线短路问题。 现在已经通过在自旋阀传感器的顶部或底部(或两个)侧上插入高磁导率,高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率,其电阻率大约为自由层的电阻率的约5倍,薄膜屏蔽层的电阻值大于自由层的4倍 层。 描述本发明的五个实施例。
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公开(公告)号:US07675718B2
公开(公告)日:2010-03-09
申请号:US11588564
申请日:2006-10-27
申请人: Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人: Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号: G11B5/39
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要: The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译: 通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题,以确保通过器件的电流仅流过 其中心区域,从而最小化其边缘读取灵敏度。
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公开(公告)号:US07162791B2
公开(公告)日:2007-01-16
申请号:US11011995
申请日:2004-12-14
申请人: Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人: Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
CPC分类号: G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要: Currently, in a process of manufacturing a top spin valve structure, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer.
摘要翻译: 目前,在制造顶部自旋阀结构的过程中,自旋阀头的屏蔽与屏蔽间隔不能低于约800,这主要是由于传感器与铅的短路问题。 现在已经通过在自旋阀传感器的顶部或底部(或两个)侧上插入高磁导率,高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率,其电阻率大约为自由层的电阻率的约5倍,薄膜屏蔽层的电阻值大于自由层的4倍 层。
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公开(公告)号:US07060321B2
公开(公告)日:2006-06-13
申请号:US11011994
申请日:2004-12-14
申请人: Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人: Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
CPC分类号: G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要: Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.
摘要翻译: 目前,自旋阀头的屏蔽到屏蔽分离不能低于约800,这主要是由于传感器到引线短路问题。 现在已经通过在自旋阀传感器的顶部或底部(或两个)侧上插入高磁导率,高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率,其电阻率大约为自由层的电阻率的约5倍,薄膜屏蔽层的电阻值大于自由层的4倍 层。 描述本发明的五个实施例。
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公开(公告)号:US20050094321A1
公开(公告)日:2005-05-05
申请号:US11011957
申请日:2004-12-14
申请人: Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人: Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号: G01R33/09 , B05D7/00 , G11B5/127 , G11B5/187 , G11B5/29 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/12 , H04R31/00
CPC分类号: G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要: Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.
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9.
公开(公告)号:US20070039166A1
公开(公告)日:2007-02-22
申请号:US11588563
申请日:2006-10-27
申请人: Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人: Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号: G11B5/127
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要: The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译: 通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题,以确保通过器件的电流仅流过 其中心区域,从而最小化其边缘读取灵敏度。
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10.
公开(公告)号:US07506430B2
公开(公告)日:2009-03-24
申请号:US11588563
申请日:2006-10-27
申请人: Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人: Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要: The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译: 通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题,以确保通过器件的电流仅流过 其中心区域,从而最小化其边缘读取灵敏度。
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