Plasma CVD method for producing a diamond coating
    1.
    发明授权
    Plasma CVD method for producing a diamond coating 失效
    用于制备金刚石涂层的等离子体CVD方法

    公开(公告)号:US5616373A

    公开(公告)日:1997-04-01

    申请号:US215965

    申请日:1994-03-18

    摘要: The invention relates to a method for depositing a diamond coating on a workpiece, for instance a drawing die or a tool punch, whereby a reactive plasma supported coating method is used. According to the invention the generation of the plasma is made by a direct current discharge, whereby additionally a flow of charged particles is fed into the discharge gap; according to the invention the workpiece to be coated is positioned in the discharge gap. Due to the inventive design a relatively long discharge gap can be used, such that also large surface areas can be coated; the coating is made at a location of the highest homogeneity and density of the plasma. By means of the invention a method is provided which can be controlled regarding financial expenses and in a reliable manner and which is suitable for large surface area coating.

    摘要翻译: 本发明涉及一种用于在工件上沉积金刚石涂层的方法,例如拉丝模具或工具冲头,由此使用反应等离子体支撑的涂覆方法。 根据本发明,通过直流放电制造等离子体的产生,由此另外将带电粒子的流进给到放电间隙中; 根据本发明,待涂覆的工件位于放电间隙中。 由于本发明的设计,可以使用相当长的放电间隙,使得也可以涂覆大的表面积; 涂层在等离子体的最高均匀性和密度的位置处制成。 通过本发明,提供了一种能够以可靠的方式对财务费用进行控制并适用于大面积涂布的方法。

    Method of and apparatus for a direct voltage arc discharge enhanced
reactive treatment of objects
    2.
    发明授权
    Method of and apparatus for a direct voltage arc discharge enhanced reactive treatment of objects 失效
    用于直流电压放电的方法和装置增强了对象的反应处理

    公开(公告)号:US5554255A

    公开(公告)日:1996-09-10

    申请号:US222378

    申请日:1994-04-04

    摘要: A method and apparatus for a reactive treatment of the surface of a workpiece, in which a process gas is brought into a chamber and a direct voltage arc discharge is generated in the chamber, the arc discharge is assisted or maintained, respectively by a coupling in of a flow of charged particles. In known treatment methods plasma generated in the direct voltage arc are generally distributed inhomogeneously in the inner space of the chamber and the area with a density of the plasma which is sufficient for the reactive surface treatment is relatively small. According to the invention this problem is solved in that the distribution of the effect of the treatment of the plasma in the chamber at least along a predetermined plane is set, and specifically by a setting of an areal distribution of the process gas inlet and/or setting of an areal distribution of the arc discharges in the chamber, in that the flow of charged particles is coupled into the chamber via a plurality of distribution openings. By such means, spatially large plasmas having high densities of ionization and acceptable densities of energy can be realized, such that it is possible to perform on the one hand treatment of large surface areas and on the other hand also treatment processes on objects which are thermally sensitive.

    摘要翻译: 一种用于对工件表面进行反应处理的方法和装置,其中处理气体进入室并且在室中产生直流电压放电,电弧放电分别由辅助或保持 的带电粒子流。 在已知的处理方法中,在直流电压电弧中产生的等离子体通常在室的内部空间中非均匀地分布,具有足够用于反应性表面处理的等离子体密度的区域相对较小。 根据本发明,这个问题的解决之处在于,至少沿着预定的平面设置等离子体处理在腔室中的效果的分布,具体地说,通过设定工艺气体入口的面积分布和/或 设置室中的电弧放电的面积分布,因为带电粒子的流经多个分配开口连接到腔室中。 通过这种方式,可以实现具有高密度的电离和可接受的能量密度的空间上较大的等离子体,从而可以一方面执行大表面积的处理,另一方面也可以对热的物体进行处理 敏感。

    Vacuum treatment system for homogeneous workpiece processing
    3.
    发明授权
    Vacuum treatment system for homogeneous workpiece processing 失效
    真空处理系统用于均匀的工件加工

    公开(公告)号:US5902649A

    公开(公告)日:1999-05-11

    申请号:US985055

    申请日:1997-12-04

    摘要: A process provides for the reactive treatment of workpieces in which a plasma beam is produced in an evacuated recipient. With respect to the area of the highest plasma density along the beam axis, workpieces are arranged in a radially offset manner. Fresh reactive gas is charged into the recipient and used-up gas is sucked out of the recipient. A vacuum treatment system comprises a plasma beam production arrangement, a gas inlet operatively connected with a reactive gas supply, an axially extending workpiece carrier arrangement radially set off from an axis of a plasma beam produced by the plasma beam production arrangement. The workpiece carrier arrangement mounts a rotational surface coaxial with respect to the axis of the plasma beam and a gas suction system. The process and system are used to deposit metastable layers, including cBN-layers, .alpha.-Al.sub.2 O.sub.3 layers, C.sub.3 N.sub.4 layers, and diamond layers, on the workpieces, to surface treat with reactive chemical compounds, including free radicals, and to coat.

    摘要翻译: 一种方法提供了在抽真空接收器中产生等离子体束的工件的反应性处理。 相对于沿着光束轴的最高等离子体密度的面积,工件以径向偏移的方式布置。 新鲜的反应性气体被装入接收器中,用完的气体从接收器吸出。 真空处理系统包括等离子体束产生装置,与反应气体供应器操作连接的气体入口,从等离子体束产生装置产生的等离子体束的轴线径向放出的轴向延伸的工件载体装置。 工件载体装置安装相对于等离子体束的轴线共轴的旋转表面和气体抽吸系统。 该工艺和系统用于在工件上沉积亚稳层,包括cBN层,α-Al2O3层,C3N4层和金刚石层,以用包括自由基在内的活性化合物进行表面处理和涂层。

    Method of and apparatus for a direct voltage arc discharge enhanced
reactive treatment of objects
    4.
    发明授权
    Method of and apparatus for a direct voltage arc discharge enhanced reactive treatment of objects 失效
    用于直流电压放电的方法和装置增强了对象的反应处理

    公开(公告)号:US5336326A

    公开(公告)日:1994-08-09

    申请号:US757712

    申请日:1991-09-11

    摘要: An apparatus for a reactive treatment of the surface of a workpiece, in which a process gas is brought into a chamber and a direct voltage arc discharge is generated in the chamber, the arc discharge is assisted or maintained, respectively by introducing a flow of charged particles. In known treatment methods, plasma generated in the direct voltage arc are generally distributed non-homogeneously in the inner space of the chamber and the area with a density of the plasma which is sufficient for the reactive surface treatment is relatively small. According to the invention this problem is solved in that the distribution of the effect of the treatment of the plasma in the chamber at least along a predetermined plane is set, and specifically by a distribution of openings for the process gas over a given area and/or by a distribution of the arc discharges in the chamber over a given area. The flow of charged particles enters into the chamber via a plurality of distribution openings. By such an arrangement, spatially large plasmas having high densities of ionization and acceptable densities of energy are realized, and it is possible to perform treatment of large surface areas and also treatment processes on objects which are thermally sensitive.

    摘要翻译: 在室内产生工件表面的反应处理装置,其中处理气体进入室和直流电压放电,电弧放电分别通过引入带电的流动来辅助或维持 粒子。 在已知的处理方法中,在直流电压电弧中产生的等离子体通常分布在室的内部空间中,具有等离子体密度足以用于反应性表面处理的面积相对较小。 根据本发明,这个问题的解决之处在于,至少沿着预定平面来设定等离子体在腔室中的处理效果的分布,具体地说是通过给定区域上的处理气体的开口的分布和/ 或者通过在给定区域中的腔室中的电弧放电的分布。 带电粒子的流动通过多个分配开口进入腔室。 通过这样的布置,实现了具有高密度的电离和可接受的能量密度的空间较大的等离子体,并且可以对热敏感的物体进行大的表面积处理和处理工艺。

    Vacuum treatment system for homogeneous workpiece processing

    公开(公告)号:US5753045A

    公开(公告)日:1998-05-19

    申请号:US499989

    申请日:1995-07-10

    摘要: A process provides for the reactive treatment of workpieces in which a plasma beam is produced in an evacuated recipient. With respect to the area of the highest plasma density along the beam axis, workpieces are arranged in a radially offset manner. Fresh reactive gas is charged into the recipient and used-up gas is sucked out of the recipient. A vacuum treatment system comprises a plasma beam production arrangement, a gas inlet operatively connected with a reactive gas supply, an axially extending workpiece carrier arrangement radially set off from an axis of a plasma beam produced by the plasma beam production arrangement. The workpiece carrier arrangement mounts a rotational surface coaxial with respect to the axis of the plasma beam and a gas suction system. The process and system are used to deposit metastable layers, including cBN-layers, .alpha.-Al.sub.2 O.sub.3 layers, C.sub.3 N.sub.4 layers, and diamond layers, on the workpieces, to surface treat with reactive chemical compounds, including free radicals, and to coat.

    Method for diamond coating substrates
    7.
    发明授权
    Method for diamond coating substrates 有权
    基板金刚石涂层方法

    公开(公告)号:US07192483B2

    公开(公告)日:2007-03-20

    申请号:US10491858

    申请日:2002-10-07

    IPC分类号: C30B29/24

    CPC分类号: C23C16/276 C23C16/279

    摘要: The present invention relates to a method for diamond coating of substrates in which the substrate is exposed in a vacuum atmosphere to a reactive gas mixture excited by means of a plasma discharge, the plasma discharge comprising a plasma beam (14) in an evacuated receiver (16) that is formed between a cathode chamber (1) and an anode (2), and the reactive gas mixture comprising a reactive gas and a working gas, the reactive gas in (9) and the working gas in (8) and/or (9) introduced into the receiver, and the receiver (16) is evacuated by a pump arrangement (15), and the hydrogen concentration of the reactive gas mixture being 0–45 vol. %.

    摘要翻译: 本发明涉及一种用于金刚石涂覆基板的方法,其中基板在真空气氛中暴露于通过等离子体放电激发的反应气体混合物中,等离子体放电包括在抽真空接收器中的等离子体束(14) 16),其形成在阴极室(1)和阳极(2)之间,反应气体混合物包含反应气体和工作气体,(9)中的反应气体和(8)中的工作气体和/ 或(9)引入接收器,并且接收器(16)由泵装置(15)抽空,并且反应气体混合物的氢浓度为0-45vol。 %。

    Installation and method for vacuum treatment or powder production
    8.
    发明授权
    Installation and method for vacuum treatment or powder production 有权
    真空处理或粉末生产的安装和方法

    公开(公告)号:US06703081B2

    公开(公告)日:2004-03-09

    申请号:US10045855

    申请日:2002-01-11

    IPC分类号: H05H124

    CPC分类号: C23C16/513

    摘要: Vacuum treatment installation with a vacuum treatment chamber containing a plasma discharge configuration as well as a gas supply configuration. The plasma discharge configuration has at least two plasma beam discharge configurations with substantially parallel discharge axes and a deposition configuration is positioned along a surface which extends at predetermined distances from the beam axes and along a substantial section of the longitudinal extent of the discharge beam.

    摘要翻译: 具有包含等离子体放电构造的真空处理室的真空处理装置以及气体供给构造。 等离子体放电配置具有至少两个具有基本上平行的放电轴的等离子体束放电结构,并且沉积构型沿着沿着放射束的纵向延伸的预定距离延伸的表面定位。

    Coating workpiece method using beam of plasma
    9.
    发明授权
    Coating workpiece method using beam of plasma 失效
    使用等离子体束涂覆工件法

    公开(公告)号:US06685994B1

    公开(公告)日:2004-02-03

    申请号:US10031258

    申请日:2002-02-05

    IPC分类号: H05H124

    摘要: Method for coating workpieces generates a beam of a plasma in an evacuated container. A region of highest plasma density is at the beam axis and workpieces having surfaces to be coated, are radially offset from, and extend along the axis with the surfaces facing the axis and being in the container. Fresh reactive gas is inlet into the container and consumed gas is removed from the container. Coating material is deposited upon the surfaces with a deposition rate of at least 400 nm/min and at a maximum temperature of the surfaces being 550° C.

    摘要翻译: 用于涂覆工件的方法在抽真空的容器中产生等离子体束。 等离子体密度最高的区域在射束轴线处,并且具有待涂覆表面的工件沿着轴线径向偏移并且沿着轴线延伸,并且表面面向轴线并处于容器中。 新鲜的活性气体是进入容器的入口,并且从容器中取出消耗的气体。 涂层材料以至少400nm / min的沉积速率沉积在表面上,并且表面的最高温度为550℃。

    Process for coating sintered metal carbide substrates with a diamond film
    10.
    发明授权
    Process for coating sintered metal carbide substrates with a diamond film 失效
    用金刚石膜涂覆烧结金属碳化物基体的方法

    公开(公告)号:US6096377A

    公开(公告)日:2000-08-01

    申请号:US974290

    申请日:1997-11-19

    IPC分类号: C23C16/26 C23C16/02 C23C16/27

    摘要: A method for coating a sintered metal carbide substrate with a diamond film is disclosed, which comprises subjecting the substrate to a selective tungsten carbide etching step; subjecting the substrate to a selective Co etching step; and subsequently coating a desired section of the substrate with the diamond film, and where after completion of the selective tungsten carbide etching step and prior to diamond coating the substrate is nucleated with diamond powder through friction contact.

    摘要翻译: 公开了一种用金刚石膜涂覆烧结的金属碳化物衬底的方法,其包括对衬底进行选择性碳化钨蚀刻步骤; 对衬底进行选择性Co蚀刻步骤; 并随后用金刚石膜涂覆基底的期望部分,并且其中在完成选择性碳化钨蚀刻步骤之后并且在金刚石涂覆之前,通过摩擦接触用金刚石粉末成核基底。