公开(公告)号：US5116462A

公开(公告)日：1992-05-26

申请号：US568286

申请日：1990-08-16

申请人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Georg Kraus ,  Helga Weiss ,  Olaf Wolter

发明人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Georg Kraus ,  Helga Weiss ,  Olaf Wolter

IPC分类号： G01B7/34 ,  B44C1/22 ,  B81C1/00 ,  C03C15/00 ,  C23F1/00 ,  G01N27/00 ,  G01Q60/04 ,  G01Q70/16 ,  H01J37/28 ,  H01L21/306 ,  H01L41/09

CPC分类号： G01Q60/04 ,  B82Y35/00 ,  G01Q70/16

摘要： A micromechanical sensor is described for the AFM/STM profilometry, incorporating a cantilever beam with at least one tip at its end and a mounting block at the opposite end. A method is described incorporating the steps of coating a wafer substrate with an insulating layer, forming a mask in the insulating layer, etching a trench in the wafer substrate, removing the insulating layer, coating the desired cantilever beam and tip material, respectively, etching the cantilever beam and tip material, and removing at least a portion of the supporting wafer material from the bottom side. The invention overcomes the problem of forming a micromechanical sensor having a cantilever beam, a tip with a predetermined shape and a mounting block.

摘要翻译： 描述了一种用于制造用于AFM / STM轮廓测量法的微机械传感器的方法，该方法由其端部具有至少一个尖端的悬臂梁和相对的一个安装块组成，包括：1.用绝缘层双面涂覆晶片衬底 ; 3，使用第一光刻步骤和反应离子蚀刻法，在晶片的顶侧上的绝缘层中制造掩模以用于将来的沟槽或凹槽蚀刻，以及在晶片的底侧的绝缘层中的掩模。 通过反应离子或各向异性湿蚀刻分别在晶片衬底中产生沟槽或凹槽，然后通过蚀刻从顶侧除去绝缘层：4.用所需的悬臂涂覆晶片表面和沟槽或凹槽 梁和尖端材料; 分别在第二光刻步骤和干蚀刻或湿蚀刻步骤中对悬臂梁和尖端进行抛光; 以及6.通过底面掩模的各向异性湿蚀刻从底侧移除支撑晶片材料。 在优选的实施例中，悬臂梁的顶侧上的与底部的剩余片晶片相对应的区域在约300℃和1000V下通过“隆隆”键合与玻璃块接合。此外，表面 可以在第一步骤中涂覆具有非共形步骤覆盖的材料，并且在具有保形阶段覆盖层的材料的第二步中涂覆晶片衬底和沟槽。 悬臂梁和尖端在保形台阶覆盖层中露出，并通过底侧掩模的选择性蚀刻去除支撑晶片和非共形台阶覆盖层。 本发明还包括用于AFM / STM轮廓测量的微机械传感器，其由一件材料微机械地制造。

公开(公告)号：US5162133A

公开(公告)日：1992-11-10

申请号：US631138

申请日：1990-12-20

申请人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Georg Kraus ,  Olaf Wolter

发明人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Georg Kraus ,  Olaf Wolter

IPC分类号： C01B31/36 ,  C23C16/32 ,  C23C16/50 ,  C23C16/52 ,  G01Q30/12

CPC分类号： C23C16/325

摘要： The present invention relates to a process for fabricating silicon carbide films and membranes with a predetermined stress via control of the deposition parameters which comprises the following steps:a) introducing a gas mixture of silane (SiH.sub.4)/helium and ethylene at flow rates of about 1000 sccm/min. and about 10 sccm/min. into a reaction chamber;b) reacting the silane and ethylene at a temperature >400.degree. C., and in a total pressure range of about 26.6 to 266 Pa, at an RF power

摘要翻译： 本发明涉及通过控制沉积参数来制造具有预定应力的碳化硅膜和膜的方法，其包括以下步骤：a）以大约流速引入硅烷（SiH4）/氦和乙烯的气体混合物 1000 sccm / min。 和约10sccm / min。 进入反应室; b）在温度> 400℃，总压力范围约26.6至266Pa，在13.56MHz的RF功率<100W下使硅烷和乙烯反应，所述硅烷和乙烯之间的反应开始 并通过辉光放电增强。 在优选的实施方案中，本征薄膜应力是拉伸，硅烷和乙烯在约500℃的温度下，总压力范围超过106.4Pa，在13.56MHz的RF功率为75W下反应 。 拉伸应力膜可以涂覆有金属吸收层，在吸收层中产生期望的掩模图案，并且从湿蚀刻的背面去除基底。 所得的X射线掩模具有光滑的表面，优异的尺寸稳定性和X射线辐射的透明度。

公开(公告)号：US06218264B1

公开(公告)日：2001-04-17

申请号：US09314410

申请日：1999-05-19

申请人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Martin Nonnenmacher ,  Helga Weiss

发明人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Martin Nonnenmacher ,  Helga Weiss

IPC分类号： H01L21311

CPC分类号： G01Q40/02 ,  Y10S438/975 ,  Y10S977/852 ,  Y10S977/878 ,  Y10T428/24926

摘要： A calibration standard comprises a supporting structure (1) of single crystal material with at least one pair of different kinds of structures consisting of a raised line (2) and a trench (3). These structures have the identical width in the range of about 500 nm. The single crystal material preferably is silicon with (110)-orientation. A method of producing the calibration standard comprises the steps: providing two polished wafers of the same single crystal material and with the same crystal orientation, forming an oxide layer on the polished surface of the first wafer, bonding the second wafer to the first oxidized wafer with the polished surfaces of the wafers facing each other, cutting the bonded structure transverse to the polished surfaces, selectively etching both the wafers to a defined depth to expose a portion of the oxide layer, masking the portions of the oxide layer now representing the raised line (2) and selectively etching the oxide layer in the unmasked areas to a defined depth to form the trench (3). The calibration standard overcomes the problem of measuring the diameter of an ultrafine tip for AFM/STM profilometry in the sub-nanometer range.

摘要翻译： 校准标准包括具有由凸起线（2）和沟槽（3）组成的至少一对不同种类的结构的单晶材料的支撑结构（1）。 这些结构具有在约500nm范围内相同的宽度。 单晶材料优选为具有（110）取向的硅。 一种生产校准标准的方法包括以下步骤：提供相同单晶材料的两个抛光晶片并具有相同的晶体取向，在第一晶片的抛光表面上形成氧化物层，将第二晶片接合到第一氧化晶片 其中晶片的抛光表面彼此面对，切割与抛光表面横向的结合结构，选择性地将两个晶片刻蚀到限定的深度以暴露氧化物层的一部分，掩盖现在代表凸起的氧化物层的部分 线（2），并且将未掩模区域中的氧化物层选择性蚀刻到限定的深度以形成沟槽（3）。 校准标准克服了在亚纳米范围内测量AFM / STM轮廓测量法的超细尖端直径的问题。

公开(公告)号：US5960255A

公开(公告)日：1999-09-28

申请号：US842307

申请日：1997-04-24

申请人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Martin Nonnenmacher, deceased ,  Helga Weiss

发明人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Martin Nonnenmacher, deceased ,  Helga Weiss

IPC分类号： B32B9/00 ,  G01B5/20 ,  G01Q60/00 ,  G01R31/26 ,  H01L21/00 ,  H01L21/311 ,  H01L21/66 ,  H01L21/76

CPC分类号： G01Q40/02 ,  B82Y35/00 ,  Y10S438/975 ,  Y10S977/852 ,  Y10S977/878 ,  Y10T428/24926

摘要： A calibration standard comprises a supporting structure (1) of single crystal material with at least one pair of different kinds of structures consisting of a raised line (2) and a trench (3). These structures have the identical width in the range of about 500 nm. The single crystal material preferably is silicon with (110)-orientation. A method of producing the calibration standard comprises the steps: providing two polished wafers of the same single crystal material and with the same crystal orientation, forming an oxide layer on the polished surface of the first wafer, bonding the second wafer to the first oxidized wafer with the polished surfaces of the wafers facing each other, cutting the bonded structure transverse to the polished surfaces, selectively etching both the wafers to a defined depth to expose a portion of the oxide layer, masking the portions of the oxide layer now representing the raised line (2) and selectively etching the oxide layer in the unmasked areas to a defined depth to form the trench (3). The calibration standard overcomes the problem of measuring the diameter of an ultrafine tip for AFM/STM profilometry in the sub-nanometer range.

摘要翻译： 校准标准包括具有由凸起线（2）和沟槽（3）组成的至少一对不同种类的结构的单晶材料的支撑结构（1）。 这些结构具有在约500nm范围内相同的宽度。 单晶材料优选为具有（110）取向的硅。 一种生产校准标准的方法包括以下步骤：提供相同单晶材料的两个抛光晶片并具有相同的晶体取向，在第一晶片的抛光表面上形成氧化物层，将第二晶片接合到第一氧化晶片 其中晶片的抛光表面彼此面对，切割与抛光表面横向的结合结构，选择性地将两个晶片刻蚀到限定的深度以暴露氧化物层的一部分，掩盖现在代表凸起的氧化物层的部分 线（2），并且将未掩模区域中的氧化物层选择性蚀刻到限定的深度以形成沟槽（3）。 校准标准克服了在亚纳米范围内测量AFM / STM轮廓测量法的超细尖端直径的问题。

公开(公告)号：US5534359A

公开(公告)日：1996-07-09

申请号：US255209

申请日：1994-06-07

申请人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Martin Nonnenmacher, deceased ,  Helga Weiss

发明人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Martin Nonnenmacher, deceased ,  Helga Weiss

IPC分类号： B32B9/00 ,  G01B5/20 ,  G01Q60/00 ,  G01R31/26 ,  H01L21/00 ,  H01L21/311 ,  H01L21/66 ,  H01L21/76

CPC分类号： G01Q40/02 ,  B82Y35/00 ,  Y10S438/975 ,  Y10S977/852 ,  Y10S977/878 ,  Y10T428/24926

摘要： A calibration standard comprises a supporting structure (1) of single crystal material with at least one pair of different kinds of structures consisting of a raised line (2) and a trench (3). These structures have the identical width in the range of about 500 nm. The single crystal material preferably is silicon with (110)-orientation. A method of producing the calibration standard comprises the steps: providing two polished wafers of the same single crystal material and with the same crystal orientation, forming an oxide layer on the polished surface of the first wafer, bonding the second wafer to the first oxidized wafer with the polished surfaces of the wafers facing each other, cutting the bonded structure transverse to the polished surfaces, selectively etching both the wafers to a defined depth to expose a portion of the oxide layer, masking the portions of the oxide layer now representing the raised line (2) and selectively etching the oxide layer in the unmasked areas to a defined depth to form the trench (3). The calibration standard overcomes the problem of measuring the diameter of an ultrafine tip for AFM/STM profilometry in the sub-nanometer range.

公开(公告)号：US5665905A

公开(公告)日：1997-09-09

申请号：US472100

申请日：1995-06-07

申请人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Martin Nonnenmacher, deceased ,  Helga Weiss

发明人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Martin Nonnenmacher, deceased ,  Helga Weiss

IPC分类号： B32B9/00 ,  G01B5/20 ,  G01Q60/00 ,  G01R31/26 ,  H01L21/00 ,  H01L21/311 ,  H01L21/66 ,  H01L21/76

CPC分类号： G01Q40/02 ,  B82Y35/00 ,  Y10S438/975 ,  Y10S977/852 ,  Y10S977/878 ,  Y10T428/24926

摘要： A method for measuring the width of a tip in an Atomic Force Microscope/Scanning Tunneling Microscope using a calibration standard is provided. The method incorporates the steps of providing a tip, measuring the width b1 of a first kind of structure, and measuring the width b2 of a second kind of structure. The steps of measuring comprise the steps of profiling the first and second kinds of structures with a tip and calculating the width of the tip as a function of the measured widths b1 and b2. The calibration standard comprises the first and second kinds of structures and may be, for example, a trench and a raised line which have substantially the same width.

摘要翻译： 提供了使用校准标准测量原子力显微镜/扫描隧道显微镜中尖端宽度的方法。 该方法包括提供尖端，测量第一种结构的宽度b1和测量第二种结构的宽度b2的步骤。 测量步骤包括用尖端分析第一和第二种结构的步骤，并根据测量的宽度b1和b2计算尖端的宽度。 校准标准包括第一种和第二种结构，并且可以是例如具有基本上相同宽度的沟槽和凸起线。

公开(公告)号：US4969415A

公开(公告)日：1990-11-13

申请号：US458006

申请日：1989-12-28

申请人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Georg Kraus ,  Gerhard Schmid

发明人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Georg Kraus ,  Gerhard Schmid

IPC分类号： C23C16/08 ,  C23C16/30 ,  C23C16/448 ,  C23C16/50 ,  H01L21/28 ,  H01L21/285

CPC分类号： C23C16/4488 ,  C23C16/08 ,  H01L21/28556 ,  Y10S148/147

摘要： The apparatus comprises a plasma deposition chamber having a port through which a fluoro compound etch gas is introduced into the chamber and a port through which the chamber is evacuated, refractory metal cathode configuration within the chamber, an anode within the chamber, and energy impression means for ionizing the etch gas in the chamber, whereby the etch gas reacts with the refractory metal cathode configuration to convert the metal to gaseous refractory metal fluorides which decompose to form a deposited layer on a semiconductor substrate positioned on the anode.

公开(公告)号：US4918033A

公开(公告)日：1990-04-17

申请号：US239569

申请日：1988-09-01

申请人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Georg Kraus ,  Gerhard Schmid

发明人： Johann W. Bartha ,  Thomas Bayer ,  Johann Greschner ,  Georg Kraus ,  Gerhard Schmid

IPC分类号： C23C16/08 ,  C23C16/30 ,  C23C16/448 ,  C23C16/50 ,  H01L21/28 ,  H01L21/285

CPC分类号： C23C16/4488 ,  C23C16/08 ,  H01L21/28556 ,  Y10S148/147

摘要： The invention comprises a PECVD method for the deposition of refractory metal layers or layers containing refractory metal by the in situ formation of refractory metal fluorides. For this purpose, an etch gas, such as CF.sub.4, NF.sub.3, SF.sub.6 etc., is introduced into a plasma deposition chamber which comprises a cathode, with a refractory metal sheet electrically connected thereto, and an anode carrying wafers.In a preferred example, CF.sub.6 is introduced into the chamber and, via a gas shower, into a cathode region. After ignition of a plasma, the ionized etch gas acts on a tungsten sheet, generating WF.sub.x ions that diffuse towards a target with wafers. The WF.sub.x ions thus produced are suitable for the deposition of a tungsten layer or a layer containing tungsten on silicon wafers.

公开(公告)号：US4871418A

公开(公告)日：1989-10-03

申请号：US172736

申请日：1988-03-23

申请人： Jurgen Wittlinger ,  Johann Greschner ,  Thomas Bayer ,  Johann W. Bartha

发明人： Jurgen Wittlinger ,  Johann Greschner ,  Thomas Bayer ,  Johann W. Bartha

IPC分类号： H01L21/302 ,  B26F1/28 ,  G03F1/20 ,  G03F7/00 ,  G03F7/12 ,  G03F7/40 ,  H01L21/3065 ,  H01L21/48 ,  H05K1/00 ,  H05K1/03 ,  H05K3/00 ,  H05K3/42

CPC分类号： H05K3/0041 ,  B26F1/28 ,  G03F1/20 ,  G03F7/00 ,  G03F7/12 ,  G03F7/40 ,  H01L21/4803 ,  H01L21/4807 ,  H01L21/486 ,  H01L2924/0002 ,  H05K1/0326 ,  H05K1/0393 ,  H05K2201/0166 ,  H05K3/42 ,  Y10S438/928

摘要： According to a preferred embodiment, arbitrarily shaped holes are fabricated in 0.1 to 2 mm thick plates of polyoxymethylene homo- or copolymers. For that purpose, the polymeric substrate is photoresist-coated on either side; the desired pattern is simultaneously applied to both the front and the back side of the photoresist layers by imagewise exposure at optimum mask alignment; the photoresist layers are developed and blanket-exposed; the resultant photoresist structures are treated with a cyclic organosilicon compound and postbaked; the through holes are produced by sequential reactive ion etching of the polyoxymethylene from the front and the back side, each time down to a depth of about 2/3 of the substrate thickness; and the silylated photoresist masks are stripped from the front and the back side of the substrate.

摘要翻译： 根据优选实施例，在0.1至2mm厚的聚甲醛均聚物或共聚物板中制造任意形状的孔。 为此目的，聚合物基材在任一侧被光致抗蚀剂涂覆; 通过在最佳掩模对准下的图像曝光同时将期望的图案施加到光致抗蚀剂层的前侧和后侧; 光致抗蚀剂层被显影和覆盖曝光; 所得光致抗蚀剂结构用环状有机硅化合物处理并进行后烘; 通孔是从前面和后面依次反应离子蚀刻聚甲醛制成的，每次下降至基片厚度的约2/3的深度; 并且硅烷基化的光致抗蚀剂掩模从基板的前侧和后侧剥离。